• 제목/요약/키워드: threshold concentration

검색결과 464건 처리시간 0.025초

Optimization of Gate Stack MOSFETs with Quantization Effects

  • Mangla, Tina;Sehgal, Amit;Saxena, Manoj;Haldar, Subhasis;Gupta, Mridula;Gupta, R.S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제4권3호
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    • pp.228-239
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    • 2004
  • In this paper, an analytical model accounting for the quantum effects in MOSFETs has been developed to study the behaviour of $high-{\kappa}$ dielectrics and to calculate the threshold voltage of the device considering two dielectrics gate stack. The effect of variation in gate stack thickness and permittivity on surface potential, inversion layer charge density, threshold voltage, and $I_D-V_D$ characteristics have also been studied. This work aims at presenting a relation between the physical gate dielectric thickness, dielectric constant and substrate doping concentration to achieve targeted threshold voltage, together with minimizing the effect of gate tunneling current. The results so obtained are compared with the available simulated data and the other models available in the literature and show good agreement.

전도성 구리충전제/에폭시수지 복합체의 전기적 특성 (Electrical Properties of Conductive Copper Filler/Epoxy Resin Composites)

  • 이정은;박영희;오승민;임덕점;오대희
    • 한국응용과학기술학회지
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    • 제30권3호
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    • pp.472-479
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    • 2013
  • The conductive polymer composites recently became increasingly to many fields of industry due to their electrical properties. To understand these properties of composites, electrical properties were measured and were studied relatively. Electrical conductivity measurements showed percolation phenomena. Percolation theories are frequently applied to describe the insulator-to-conductor transitions in composites made of a conductive filler and an insulating matrix. It has been showed both experimentally and theoretically that the percolation threshold strongly depends on the aspect ratio of filler particles. The critical concentration of percolation formed is defined as the percolation threshold. This paper was to study epoxy resin filled with copper. The experiment was made with vehicle such as epoxy resin replenished with copper powder and the study about their practical use was performed in order to apply to electric and electronic industry as well as general field. The volume specific resistance of epoxy resin composites was 3.065~13.325 in using copper powder. The weight loss of conductive composites happened from $350^{\circ}C{\sim}470^{\circ}C$.

Effects of radon on soil microbial community and their growth

  • Lee, Kyu-Yeon;Park, Seon-Yeong;Kim, Chang-Gyun
    • Environmental Engineering Research
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    • 제25권1호
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    • pp.29-35
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    • 2020
  • The aim of this study was to estimate the microbial metabolic activity of indigenous soil microbes under the radon exposure with different intensity and times in the secured laboratory radon chamber. For this purpose, the soil microbes were collected from radon-contaminated site located in the G county, Korea. Thereafter, their metabolic activity was determined after the radon exposure of varying radon concentrations of 185, 1,400 and 14,000 Bq/㎥. The average depth variable concentrations of soil radon in the radon-contaminated site were 707, 860 and 1,185 Bq/㎥ from 0, 15, and 30 cm in deep, respectively. Simultaneously, the soil microbial culture was mainly composed of Bacillus sp., Brevibacillus sp., Lysinibacillus sp., and Paenibacillus sp. From the radon exposure test, higher or lower radiation intensities compared to the threshold level attributed the metabolic activity of mixed microbial consortium to be reduced, whereas the moderate radiation intensity (i.e. threshold level) induced it to the pinnacle point. It was decided that radon radiation could instigate the microbial metabolic activity depending on the radon levels while they were exposed, which could consequently address that the certain extent of threshold concentration present in the ecosystem relevant to microbial diversity and population density to be more proliferated.

유효 채널길이를 고려한 n형 단채널 MOSFET의 문턱전압 모형화 (Threshold Voltage Modeling of an n-type Short Channel MOSFET Using the Effective Channel Length)

  • 김능연;박봉임;서정하
    • 전자공학회논문지T
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    • 제36T권2호
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    • pp.8-13
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    • 1999
  • 본 논문은 MOSFET에서 2차원적 전위분포가 채널방향을 따라 준-선형적으로 변한다는 GCA(Gradual Channel Approximation)를 진성영역에서 수직 공핍층 폭이 준-선형적으로 변한다는 가정으로 대치하여 단채널 MOSFET에서도 적용 가능한 문턱전압의 해석적 모형을 제안하였다. 제안된 문턱전압 표현식은 유효 채널길이, 드레인전압, 기판(substrate) 바이어스 전압, 기판 도핑농도, oxide 두께 등에 대한 의존성을 통합적으로 나타내었으며, 계산된 결과는 BSIM3v3의 결과와 유사한 경향을 보이고 있다.

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전도성 니켈분말-에폭시수지 복합체의 전기적 특성 (Electrical Properties of Conductive Nickel Powder-Epoxy Resin Composites)

  • 오대희;임덕점;이정은;박영희;오승민
    • 한국응용과학기술학회지
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    • 제31권2호
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    • pp.329-336
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    • 2014
  • The conductive polymer composites have attracted considerable attention in the field of industry due to their electrical properties. To understand electrical properties of the composites, their volume specific resistance was measured. Electrical conductivity results showed percolation phenomena. Percolation theories are frequently applied to describe the insulator-to-conductor transitions in the composites composed of conductive filler and insulating matrix. It was found that the percolation threshold strongly depends on the aspect ratio of filler particles. The critical concentration of percolation formed is defined as the percolation threshold. The purpose of this study was to examine electrical properties of the epoxy resins filled with nickel. The sample was prepared using vehicle such as epoxy resin replenished with nickel powder, and the evaluation on their practical use was performed in order to apply them to electric and electronic industry as well as general field. The volume specific resistance of epoxy resin composites was 4.666~13.074 when using nickel powder. Weight loss of the conductive composites took place at $350^{\circ}C{\sim}470^{\circ}C$.

Dietary Fatty Acids and Blood Cholesterol

  • Hayes, K.C.;Khosla, Pramod;Pronczuk, Andrzej;Lindsey, Saralyn
    • Journal of Nutrition and Health
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    • 제24권4호
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    • pp.378-392
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    • 1991
  • A series of studies in monkeys and hamsters, and reevaluation of published human data, indicate that dietary saturated fatty acids exert a dissimilar metabolic impact on cholesterol metabolism. Myristic acid(14 : 0) appears to have a major cholesterol-raising effect by means of decreasing LDL receptor activity and by increasing the direct production of LDL (from sources other than VLDL-catabolism) Palmitic acid (16 : 0) appears neutral in most cases (plasma cholesterol<200mg/dl) or until the LDL receptor is down-regulated, as with high cholesterol intake or obesity. In such cases. the down-regulated LDL receptors coupled with an increased VLDL production (induced by 16 : 0 and 18 : 1) can divert VLDL remnants to LDL and expand the LDL pool. Furthermore. the cholesterolemic impact of any saturated fatty acid can be countered up to a saturable 'threshold' level by dietary linoleic acid (18 : 2) which up-regulates the LDL receptor. Once above this 'threshold' the major fatty acids (16 : 0, 18 : 0, 18 : 1, 18 : 2, 18 : 3) appear to exert an equal impact on the circulating cholesterol concentration.

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Influence of Channel Thickness Variation on Temperature and Bias Induced Stress Instability of Amorphous SiInZnO Thin Film Transistors

  • Lee, Byeong Hyeon;Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제18권1호
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    • pp.51-54
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    • 2017
  • TFTs (thin film transistors) were fabricated using a-SIZO (amorphous silicon-indium-zinc-oxide) channel by RF (radio frequency) magnetron sputtering at room temperature. We report the influence of various channel thickness on the electrical performances of a-SIZO TFTs and their stability, using TS (temperature stress) and NBTS (negative bias temperature stress). Channel thickness was controlled by changing the deposition time. As the channel thickness increased, the threshold voltage ($V_{TH}$) of a-SIZO changed to the negative direction, from 1.3 to -2.4 V. This is mainly due to the increase of carrier concentration. During TS and NBTS, the threshold voltage shift (${\Delta}V_{TH}$) increased steadily, with increasing channel thickness. These results can be explained by the total trap density ($N_T$) increase due to the increase of bulk trap density ($N_{Bulk}$) in a-SIZO channel layer.

고분자 분산형 액정 표시소자의 전기광학적 특성 개선 (Improvement in the electro-optical properties of PDLCs)

  • 최기석;박우상;박세근
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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    • pp.125-128
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    • 1998
  • The electro-optical properties of PDLCs ( Polymer Dispersed Liquid Crystals ) that have been interested for applications to projection display devices lately are significantly improved. For this improvement, we optimized not only the material parameters of liquid crystal and polymer but also the process conditions. Using TL series liquid crystals and polymer PN393 provided from Merck, we obtained the optimized process conditions such as cell gap, LC concentration, curing temperature and curing time. Under these conditions, we have achieved PDLC cells of threshold voltage 2.6V. contrast ratio 260 and negligible hysteresis.

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KrF 엑시머 레이저에 의한 ITO 박막의 어블레이션과 표면특성관찰 (The ablation of ITO thin films by KrF Eximer laser and its characteristics)

  • Lee, Kyoung-Cheol;Lee, Cheon
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.511-514
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    • 2000
  • This work aimed to develop ITO (Indium Tin Oxide) thin films ablation with a KrF Eximer laser required for the application in flat panel display, especially patterning into small geometry on a large substrate area. The threshold fluence for ablating ITO on glass substrate is about 0.1 J/cm$^2$. And its value is much smaller than using third harmonic Nd:YAG laser. Through the optical microscope measurement the surface color of the damaged ITO is changed into dark brown and irradiated spot is completely isolated form the undamaged surroundings by laser light. The XPS analysis showed that the relative surface concentration of Sn and In were essentially unchanged (In :Sn=5:1) after irradiating Eximer laser. Using aluminium mask made by second harmonic Nd:YAG laser the ITO patterning is carried out.

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Image Sensor에 사용되는 Dynamic NMOS Shift Register의 설계 (Design of Dynamic NMOS Shift Register Used for Image Sensor)

  • 김용범;박상식;조철식;이종덕
    • 대한전자공학회논문지
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    • 제24권3호
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    • pp.459-465
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    • 1987
  • This paper describes the circuit and the layout of the shift register which can be used for a scanner of image sensor. P-well concentration and threshold voltage for proper iperation are calculated on the basso of the fixed process and the layout design. The calculation procedure of maximum operation frequency is also carried out. It is ascertained by SPICE simulation that the shift register produces the outputn pulse without threshold voltage loss up to 13MHz.

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