• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1103-1107
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• 2005

Single-crystal silicon thin films on glass (SOG) and on fused-quartz (SOQ) were prepared using wafer bonding and hydrogen-induced layer transfer. Thinfilm transistors (TFTs) were subsequently fabricated. The high-temperature processed SOQ TFTs show better device performance than the low-temperature processed SOG TFTs. Tensile and compressive strain was measured respectively on SOQ and SOG. Consistent with the tensile strain, enhanced electron effective mobility was measured on the SOQ TFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.904-907
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• 2007

We reported a simplified circuit model to investigate the interface states and the quality of a-Si film based on a MIS structure using admittance spectroscopy. The model can be employed easily to monitor the fabrication process of thin-film transistor and to obtain the important parameters.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.53-53
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• 2000

반도체 산업에서 유기물질의 응용에 많은 관심을 나타내고있으며, 그 응용의 예로는 발광 다이오드(light emitting diode)와 박막트랜지스터(thinfilm transistor)가 주를 이루고 있다. 이러한 유기 물질을 이용하면 소자의 제작 공정의 단순화와 제작 가격을 낮출 수 있는 이점을 기대할 수 있다. 본 연구에서는 유리 기판 위에 pentcence 다이오드를 제작하였다. 유리 기판 위에 silicon dioxide를 PECVD으로 성막하였다. 전극으로는 Ohmic contact를 이루기 위해 금(Au)을 사용하였으며 schottky contact을 이루기 위해서 알루미늄(Al), 인듐(In), 크롬(Cr), 은(Ag), 금(Au)을 각각 사용하였다. 소자의 활성 층으로는 pentcene을 가장 단순한 열 증착법으로 성막하였고, 진공도는 10-8Torr를 유지하였으며 성막 속도는 0.3 $\AA$/sec로 성막하였다. 제작된 소자들은 $\alpha$-step, I-V, C-V, AFM, IR등을 이용하여 측정, 분석하였다.

• Bulletin of the Korean Chemical Society
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• v.33 no.9
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• pp.3061-3070
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• 2012

Novel 2-hexylthieno[3,2-b]thiophene-containing conjugated molecules have been synthesized via a reduction reaction using tin chloride in an acidic medium. They exhibited good solubility in common organic solvents and good self-film and crystal-forming properties. The single-crystalline objects were fabricated by a solvent slow diffusion process and then were employed for fabricating field-effect transistors (FETs) along with thinfilm transistors (TFTs). TFTs made of 5 and 6 exhibited carrier mobility as high as 0.10-0.15 $cm^2V^{-1}s^{-1}$. The single-crystal-based FET made of 6 showed 0.70 $cm^2V^{-1}s^{-1}$ which was relatively higher than that of the 5-based FET (${\mu}=0.23cm^2V^{-1}s^{-1}$). In addition, we fabricated organic photovoltaic (OPV) cells with new 2-hexylthieno [3,2-b]thiophene-containing conjugated molecules and methanofullerene [6,6]-phenyl C61-butyric acid methyl ester ($PC_{61}BM$) without thermal annealing. The ternary system for a bulk heterojunction (BHJ) OPV cell was elaborated using $PC_{61}BM$ and two p-type conjugated molecules such as 5 and 7 for modulating the molecular energy levels. As a result, the OPV cell containing 5, 7, and $PC_{61}BM$ had improved results with an open-circuit voltage of 0.90 V, a short-circuit current density of 2.83 $mA/cm^2$, and a fill factor of 0.31, offering an overall power conversion efficiency (PCE) of 0.78%, which was larger than those of the devices made of only molecule 5 (${\eta}$~0.67%) or 7 (${\eta}$~0.46%) with $PC_{61}BM$ under identical weight compositions.