• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.94-99
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• 1994

The purpose of this work is to investigate the interface characteristics of hydrogenated amorphous silicon thin films prepared by PECVD and photo-induced CVD and to examine the annealing effects of ultraviolet irradiation on hydrogenated amorphous silicon thin films which were degraded by visible light illumination. The interface layer thickness of films deposited by photo-induced CVD was about 600-900.angs. while that by PECVD was about 1000-1300.angs.. These results can show that the quality of interface layer in photo induced CVD film is better than that in PECVD sample. The electrical properties are improved by ultraviolet irradiation on visible light soaked a-Si:H films using photo-CVD light sources, probably due to the fact that UV generates phonons in a-Si:H films and anneal the meta stable defects.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.196-196
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• 2010

In this work, we deposited SWNTs/silane hybrid thin films by multiple spray-coating on glass substrate, and examined their electrical response for humidity. Generally silane binders which are often used in CNT solution to adhere CNTs to substrate well can be easily functionalized to each own group on the surface of CNTs after they are hardened by way of the hydrolysis reaction. We investigated how silane binders (TEOS,, MTMS and VTMS) in SWNTs hybrid thin films make effect to their electrical response on humidity. As the result, we observed that the resistance in the sample using TEOS was changed dramatically while it was almost invariant in the samples using MTMS and VTMS for increasing humidity.

• Journal of Magnetics
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• 제11권3호
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• pp.135-138
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• 2006

We studied local anodization on permalloy $(Ni_{80}Fe_{20})$ thin film with an atomic force microscope (AFM), which was performed by applying a voltage between the permalloy sample and conductive AFM tip. Comparing with anodization on Si (100) substrate, nano-structures on the permalloy thin film was fabricated with low processability.In order to improve the processability on the permalloy thin film, we used dot-fabrication method, thatis, a conductive AFM probe was kept at a position on the film during the anodization process.

• Journal of Magnetics
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• 제2권2호
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• pp.38-41
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• 1997

Spinel ferrite thin films Fe3-x MnxO4 (x=0.000, 0.006, 0.0010, 0.015, 0.023) were prepared on the coverglass by ferrite plating technique. To investigate the uniaxial anisotrpy of the samples, the saturation and effective magnetization of the thin films were measured by VSM(vibrating sample magnetometer) and FMR(ferromagnetic resonance) measurements respectively. The spectroscopic splitting g factor were estimated from the ferromagnetic resonance curves. For x=0.000, 0.006, the effective magnetization was measured of temperatures form T=77 K to T=300 K. The results were analyzed in terms of Bloch's law Ms(T) = Ms(0) (1-BT3/2-CT5/2). The Bloch coefficient B, C were determined by fitting. Ms(0) was obtained by extrapolating Meff to 0 K. From this result, the spin wave stiffness constants D was also determined.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.379-382
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• 1999

In this paper, we investigated the characteristics of MgO thin film prepared by unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP The minimum discharge voltage is obtained for the sample of substrate bias voltage-10V. Moreover the anti-sputtering characteristics of MgO thin film by UBMS is improved about 40% than one of balanced magnetron sputtering(BMS)

• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.693-698
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• 1995

We fabricated Zinc Oxide transparent conductive thin films with 2wt% of A1203 doping using rf magnetron sputtering. And we investigated electrical and optical characteristics of them which were made with conditions ; rf power 60-300W, thickness of film 3000 11000.angs.. Resistivity, carrier concentration and Hall mobility were investigated for electrical characteristics. Transmittance and optical band gap were investigated with Spectrophotometer in the wavelength range between 200-900 nm. As a result, ZnO thin film fabricated with rf power of 180W and thickness of 5000.angs. showed the best properties. At the best condition, the sample has resistivity of 1*10$\^$-4/.ohm.cm and transmittance of 95% in the visible range.

• 한국표면공학회지
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• 제29권5호
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• pp.424-429
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• 1996

Thin films of Ti-Ni alloy were formed by sputtering under various Ar gas pressures and r. f. powers to investigate the optimum sputtering conditions and to demonstrate their shape memory effect. The composition and structure of the films were examined by electron micro-probe analysis and scanning electron microscope. These films were annealed in order to crystallize them. The mechanical property of the annealed films was evaluated by a conventional bending test. The transformation tmeperatures were determined by differential scanning calorimetry. The shape memory behaviour was examined quantiatatively by changing in sample temperature under various constant loads. It was found that the Ar gas pressure had a critical effect on the mechanical property of the thin film,s although the r.f. power also affected it. The films formed at a high Ar gas pressure were too brittle to be bent successfully. However, the films formed at a low Ar gas pressur could be bent and their shape memory behavior was found to be comparable with that of bulk Ti-Ni alloys.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1430-1431
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• 2006

We investigated the formation of 2-dimension hologram grating by means of selective etching characteristic and photo-expansion effect according to photo irradiation on amorphous As-Ge-Se-S thin film. By method of phase holography, we made the 2-dimensional hologram grating by each (S:P) and ($+45^{\circ}:-45^{\circ}$) polarized beam with DPSS laser(532nm) and He-Ne laser(632nm). A recording property was observed at each polarized beam through 2-dimensional hologram surface relief grating. Chalcogenide thin film was etched selectively by NaOH solution after the formation of 1-dimensional diffraction grating. And then etched sample was rotated 90 degree to fabricate 2 dimensional hologram grating. We found that it was observed the formation of 2-dimensional hologram grating by AFM(Atomic Force Microscopy).

• 한국전기전자재료학회논문지
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• 제23권2호
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• pp.153-158
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• 2010

The crystallization of FePt/MgO(001) magnetic thin films of various thicknesses has been studied using synchrotron x-ray scattering, atomic force microscope, and vibrating sample magnetometer. In film with a 499-$\AA$-thick, face-centered tetragonal, ordered FePt phase was dominantly crystallized into perpendicular (001) grains keeping the magnetically easy c-axis normal to the film plane during annealing. In film with a 816-$\AA$-thick, however, longitudinal (110) grains keeping the c-axis parallel to the film plane were grown on top of the perpendicular (001) grains. The behavior of the magnetic properties was consistent with the thickness dependence of the crystallization. We attribute the thickness dependence of the crystallization to the substrate effect, which prefers the growth of the c-axis oriented perpendicular grains near the film/substrate interfacial area.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.309-312
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• 1997

The Ce-Cr(-Ta) film are one of the most suitable candidates for perpendicular magnetic media. the control of the preparation conditions, such as Ar gas pressure P$\_$Ar/ substrates temperature T$\_$s/, films thickness $\delta$, deposition speed R$\_$d/, is considered to be important to attain ultra high density recording far perpendicular magnetic recording media. In this study, the Co-Cr thin films and Co-Cr-Ta thin films were deposited on the glass side substrates by using Facing Targets Sputtering apparatus(FTS). Crystallographic characteristics and magnetic characteristics were evaluated by X-ray diffractometry(XRD), Vibrating Sample Magnetometer(VSM) respectively.