• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.335-335
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• 2007

본 연구에서는 RF Magnetron Sputtering 법으로 94:6 wt%의 비율로 Sb가 첨가된 $SnO_2$ 타겟을 사용하여 실온에서 ATO(Antimony doped Tin Oxide) 박막을 증착하고, 열처리가 ATO 박막의 구조적, 전기적, 광학적 특성에 미치는 효과를 연구하고자 하였다. ATO 박막의 두께는 약 200 nm로 증착하였으며, 실험 조건으로는 Ar 유량을 100 seem, 진공도는 1, 5, 10 mTorr로 변화시켰으며 스퍼터링 파워는 100, 150, 200, 250 W로 조절하였다. 증착되어진 박막은 vacuum 상태에서 300, $600^{\circ}C$의 온도에서 열처리를 수행하였으며 결과적으로 스퍼터링 파워가 증가함에 따라 비저항이 감소하였고, 250 W의 파워와 10 mTorr의 공정압력 조건에서 $600^{\circ}C$로 열처리한 ATO 박막은 $5{\times}10^{-3}{\Omega}-cm$의 저항률과 85.3%의 높은 투과도를 가지는 우수한 투명 전도막을 얻을 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.336-337
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• 2007

현재 투명전극의 재료로 ITO, ZnO, $SnO_2$등의 재료가 주로 이용되며, 낮은 저항률을 장점으로 가지는 ITO 박막이 가장 널리 이용되고 있으나, 가격이 비싸다는 단점을 가지고 있다. 이 밖에도 ITO 박막보다 가격이 저렴한 ZnO박막에 대한 연구가 많이 진행되고 있으나, 고온에서의 열적 불안정성 등의 문제로 상용화되지는 못하고 있다. 그러나 $SnO_2$ 박막은 ITO와 ZnO 박막보다 저항률이 다소 높지만, 우수한 열적, 화학적 안정성과 저렴한 가격으로 ITO 박막을 대체할 투명전도막 재료로 주목받고 있다. 본 연구에서는 $SnO_2$박막의 저항률 향상을 위하여 ATO(Antimony doped Tin Oxide) 박막을 RF Magnetron Sputtering 법으로 Coming glass위에 증착하였으며, 박막 증착시 산소 유량의 변화가 ATO 박막의 구조적, 전기적 그리고 광학적 특성에 미치는 효과를 연구하였다. 본 실험에서는 동작압력을 10 mTorr, RF power를 250W로 고정하고 $O_2$ 유량을 부분적으로 변화시키면서 증착되어진 ATO 박막을 분석한 결과 Ar:$O_2$의 비가 90:10일 때 최적의 가스비율로써 우수한 구조적, 전기적 그리고 광학적 특성을 보임을 확인하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.7
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• pp.539-544
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• 2013

To study the encapsulation method for heat dissipation of high brightness organic light emitting diode (OLED), red emitting OLED of ITO (150 nm) / 2-TNATA (50 nm) / NPB (30 nm) / $Alq_3$ : 1 vol.% Rubrene (30 nm) / $Alq_3$ (30 nm) / LiF (0.7 nm) / Al (200 nm) structure was fabricated, which on $Alq_3$ (150 nm) / LiF (150 nm) as buffer layer and Al as protective layer was deposited to protect the damage of OLED, and subsequently it was encapsulated using attaching film and metal sheet. The current density, luminance and power efficiency was improved according to thickness of Al protective layer. The emission spectrum and the Commission International de L'Eclairage (CIE) coordinate did not have any effects on encapsulation process using attaching film and metal sheet The lifetime of encapsulated OLED using attaching film and metal sheet was 307 hours in 1,200 nm Al thickness, which was increased according to thickness of Al protective layer, and was improved 7% compared with 287 hours, lifetime of encapsulated OLED using attaching film and flat glass. As a result, it showed the improved current density, luminance, power efficiency and the long lifetime, because the encapsulation method using attaching film and metal sheet could radiate the heat on OLED effectively.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1970-1971
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• 2007

The efficiency of such work highly depend on the worker's safety, who is protected by tools such as gloves, sleeves, blankets and flexible coverings among other manufactured natural-rubber goods. Use, storage and maintenance of these tools guarantee the quality and durability of the material. However, it might be observed that good tools made of such material are disapproved of when received from manufacturers or when they are removed from the warehouse for replacement. This work shows the experimental results obtained from ageing at a temperature of $100^{\circ}C$ for 48, 70 and 312 h, although the application of AC electrical tension in samples and the measuring of current leakage are presented. The measurements in samples were carried out with samples prepared from the deformulated commercial materials and respectively reformulated into thin films. The obtained results showed the mechanisms of conduction of samples in low and high electric fields. It was also identified an electric tension transition showing that in low fields it prevails the Ohm's law conduction, and in high electric fields it prevails the conduction of space charge limited current (SCLC). These results can support the natural rubber formulation process having as their main objective the reducing of the mechanisms that occur under high conduction current in high electric fields, which leads the material to a dielectric breakdown. It is necessary to research this raw material from different internationally standard clones to characterize dielectric and electric properties for industrial applications. Moreover, this natural material has a low commercial price when compared to the synthetic ones.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.15-23
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• 2002

In this study, metal/ZnO contacts were thermally annealed at different temperatures (as-dep., 400$^{\circ}C$, 600$^{\circ}C$, 800$^{\circ}C$, 1000$^{\circ}C$) for the investigation of electrical properties, and surface and interface characteristics. The analysis of the element composition and the chemical bonding state of the surface was made by the XPS(X-ray photoelectron spectroscopy). An attempt was made to establish the electrical property-microstructure relationship for the (Ti, Au)/ZnO. The Ti/ZnO contact exhibits an ohmic characteristics with a relatively high contact resistance of 4.74${\times}$10$\^$-1/ $\Omega$$\textrm{cm}^2$ after an annealing at 400$^{\circ}C$. The contact showed a schottky characteristics when the samples were annealed at higher temperature than 400$^{\circ}C$. The transition from the ohmic to schottky characteristics was contributed from the formation of the oxide layers as was confirmed by the peaks for O-O and Ti-O bondings in XPS analysis. For the Au/ZnO contact the lowest contact resistance was obtained from the as-deposited sample. The resistance was slowly increased with annealing temperature up to 600$^{\circ}C$. The ohmic characteristics were maintained eden fort 600$^{\circ}C$ annealing. The XPS analysis showed that the Au-O intensity was dramatically decreased with temperature above 600$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.342-342
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• 2007

원자층 증착(Atomic Layer Deposition: ALD) 방법은 반응물질들을 펄스형태로 챔버에 공급하여 기판 표면에 반응물질의 표면 포화반응에 의한 화학적 흡착과 탈착을 이용한 박막증착기술이다. ALD법은 박막의 조성 정밀제어가 쉽고, 파티클 발생이 없으며, 대면적의 박막 증착시 균일성이 우수하고, 박막 두께의 정밀 조절이 용이한 장점이 있다. 원자층 증착 공정에서 짧은 시간 안에 소스를 충분히 공급하기 위한 방법으로는 소스 온도를 증가시켜 전구체의 증기압을 높여 반응기로의 유입량을 증가시키는 방법, 전구체의 공급시간을 늘리는 방법 등을 들 수 있다. 그러나 전구체 온도를 상승시키는 경우, 공정 조건의 변화가 요구되며 전구체의 변질에 의하여 형성된 막이 의도하는 막 특성을 만족시키지 못하게 되는 문제점이 발생될 우려가 있다. 그리고 전구체를 충분히 공급하기 위하여 전구체의 공급시간을 늘이는 방법을 사용하면, 원하는 두께의 막을 형성하기 위하여 소요되는 공정시간이 증가된다. 이를 해결하기 위해 수송가스를 이용한 버블러 형태의 전구체 공급 장치를 사용하지만 이 또한 전구체의 수명을 단축시키는 단점을 가지고 있다. 본 논문에서는 위의 문제점을 극복할 수 있는 새로운 개념의 수송가스 도움 전구체 공급 장치를 소개한다. 본 연구에서 사용된 수송가스 도움 전구체 공급 장치를 가지는 ALD 장비는 Lucida-D200 (NCD Technology사)이며 기판으로는 8인치 실리콘 웨이퍼를 사용하였으며 (TEMA)Zr을 사용하여 ZrO2 박막을 성장하였다. 수송가스 도움 전구체 공급 장치를 사용한 경우, 그렇지 않은 경우 보다 $30^{\circ}C$ 이상 전구체 온도를 낮출 수 있으며, 또한 증착 속도를 약 2배정도 증가시킬 수 있었다. 이들 박막들은 XRD, XPS, AFM 등을 이용하여 결정구조, 결합에너지, 표면 거칠기 등의 특성을 관찰하였다. 그리고 C-V, I-V 측정을 이용해 정전용량, 유전율, 누설전류 등의 전기적 특성을 평가하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.437-443
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• 2000

In this study several lanthanide complexes such as Eu(TTA)$_3$(Phen), Tb(ACAC)$_3$-(Cl-Phen) were synthesized and the white-light electroluminescence(EL) characteristics of their thin films were investigated where the devices having structures of anode/TPD/Tb(ACAC)$_3$(Cl-Phen)/Eu(TTA)$_3$(Phen)/Alq$_3$or Bebq$_2$/cathode and the low work function metal alloy such as Li:Al was used as the electron injecting electrode(cathode). Device structure of glass substrate/ITO/TPD(30nm)/Tb(ACAC)$_3$(Phen)(30nm)/Eu(TTA)$_3$(Phen)(6nm)/DCM doped Alq$_3$(10nm)/Alq$_3$(20nm)/Li:Al(100nm) was also fabricated and their EL characteristics were investigated where Eu(TTA)$_3$(Phen) and DCM doped Alq$_3$were used as red light-emitting materials. It was found that the turn-on voltage of the device with non-doped Alq$_3$was lower than that of the devices with doped Alq$_3$and the blue and red light emission peaks due to TPD and Eu(TTA)$_3$(Phen) with non-doped Alq$_3$were lower than those with DCM doped Alq$_3$Details on the white-light-emitting characteristics of these device structures were explained by the energy and diagrams of various materials used in these structure where the energy levels of new materials such as ionization potential(IP) and electron affinity(EA) were measured by cyclic voltametric method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1241-1245
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• 2004

Continuous physical vapor deposition (PVD) method is one of many processes to fabricate long length coated conductor which is required for successful large-scale application of superconducting power devices. Three film deposition systems (pulsed laser deposition, sputtering, and evaporation) equipped with reel-to-reel(R2R) metal tape moving apparatus were installed and used to deposit multi-layer oxide thin films. Both RABiTS and IBAD texture templates are used. IBAD template consists of CeO$_2$(PLD)/YSZ(IBAD) on stainless steel(SS) metal tape, and RABiTS template has the structure of CeO$_2$/YSZ/Y$_2$O$_3$ which was continuously deposited on Ni-alloy tape using R$_2$R evaporation and DC reactive sputtering in a deposition system designed to do both processes. 0.4 m-long coated conductor with Ic(77 K) of 34 A/cm was fabricated using RABiTS template. 0.5 m and 1.1 m-long coated conductor with Ic(77 K) of 41 A/cm and 26 A/cm were fabricated using IBAD template.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.448-449
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• 2006

For the possible applicative pearl pigment, multi-layered $TiO_2/Al/TiO_2$, $TiO_2/Cr/TiO_2$ thin film was deposited on glass substrate by using sputtering method. $TiO_2$ and Al or Cr was selected as a possible high and low refraction materials at the film interface respectively. Optical properties including color effect were systematically studied in terms of different film thickness and film layers by using spectrometer. In order to expect the experimental results, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. The film consisting of $TiO_2/Al/TiO_2$, $TiO_2/Cr/TiO_2$ layers show the wavelength range of 430 - 760nm, typically color ranges between bluish purple and red. It was confirmed that this experimental result was quite well matched with the experimental one.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.243-244
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• 2006

As an preliminary study for the quench protection of high temperature superconducting (HTS) cable using superconducting fault current limiter (SFCL), experimental research was carried out. The test circuit was composed of Bi-2223/Ag HTS tape and a SFCL made of YBCO thin films. In the normal state, the applied current of 56 A, which was critical current of HTS tape, could be flown through the circuit without resistive loss. Increasing the currents, the quench development of both materials was investigated from the voltage signal acquired from the resistance of the quenched superconductor. Up to around 10 times of the critical current was applied to the HTS tape and the current limiting characteristics of SFCL were investigated. In addition, for the finding out the optimal operating condition of SFCL such as the numbers of elements, a shunt resistor was applied to the SFCL and quench characteristics were analyzed as well.