• 제목/요약/키워드: thin-film inductor

검색결과 43건 처리시간 0.026초

Patterned FeTaN 연자성 박막을 이용한 RF inductor의 제조 (Fabrication of RF Inductor Using FeTaN Patterned Soft Magnetic Films)

  • 배석;김충식;류성룡;남승의;김형준;송재성;마사히로 야마구치
    • 한국자기학회지
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    • 제11권6호
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    • pp.239-244
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    • 2001
  • 최근 연구가 활발히 진행되고 있는 RF 대역에서 사용가능한 인덕터를 제조하여 특성을 평가하였다. 인덕턴스와 Q값을 높이기 위하여 5000 두께의 F $e_{78.81}$T $a_{8.47}$ $N_{12.71}$ 연자성박막을 삽입하였으며, 자성박막의 FMR 공진주파수를 인위적으로 확장시키기 위하여 pattern을 형성시켜 shape anisotropy를 증가시켰다. 또한 코일부분은 lift-off process를 이용하여 제조하였다. 제조된 인덕터의 디자인은 4턴의 rectangular spiral형태였으며, 측정된 특성은 Ti/Ag air-core의 경우 5 GHz까가지 공진이 없었으며 2GHz에서 Q값이 9, 인덕턴스 8.4nH였다. 자성박막을 이용한 경우 9 nH에 공진주파수는 약 700 MHz부근이었다.다.

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A Study on Fabrication of Magnetic Thin Film Inductors for DC-DC Converter

  • Lee, Young-Ae;Kim, Sang-Gi;Do, Seung-Woo;Lee, Yong-Hyun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.225-225
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    • 2010
  • In this study, the optimum structure of a magnetic thin film inductor was designed for application of DC-DC converters. The $Ni_{81}Fe_{19}$ (at%) alloy was selected as a high-frequency($\geq$ MHz) magnetic thin film core material and deposited on various substrates (bare Si, $SiO_2$ coated Si) using a high vacuum RF magnetron sputtering system. As-deposited NiFe thin films show similar magnetic properties compared to bulk NiFe alloys, indicating that they have a good film quality. The optimum design of solenoid-type magnetic thin film inductors was performed utilizing a Maxwell computer simulator (Ansoft HFSS V7.0 for PC) and parameters obtained from the magnetic properties of magnetic core materials selected. The high-frequency characteristics of the inductance(L) and quality factor(Q) obtained for the designed inductors through simulation agreed well with those obtained by theoretical calculations, confirming that the simulated result is realistic. The optimum structure of high-performance ($Q{\geq}60$, $L\;=\;1{\mu}H$, efficiency${\geq}90%$), high-frequency (${\geq}5MHz$), and solenoid-type magnetic thin film inductors was designed successfully.

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높은 비저항을 갖는 RF 소자용 CoPdAlO 박막의 자기적 특성 (Magnetic Properties of High Electrical Resistive CoPdAlO Film for RF Device)

  • 김택수;이영우;김종오
    • 한국자기학회지
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    • 제11권3호
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    • pp.109-113
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    • 2001
  • Presently, an inductor adapted at MMIC (Monolithic Microwave Integrated Circuit) which is used for cellular phone or PHS operates at quasi-microwave range over 800 MHz. However, a W-CDMA (Wideband Code Division Multiple Access) will use about 2 GHz range. Therefore magnetic film device should be compatible up to 2 GHz. We have deposited Co-Pd-Al-O system film using rf sputtering method which is expected up to 2 GHz, and investigated the effect of Pd content and magnetic field annealing. When Pd composition is 19%, Hk was 118 Oe, and ${\mu}$′showed flat frequency characteristics up to 1.5 GHz. The Q factor (=${\mu}$′/${\mu}$") was 23.3 at 1 GHz, 6.7 at 1.5 GHz and 1.5 at 2 GHz, respectively. Resonance frequency was 2 GHz. Therefore Co-Pd-Al-O thin film could be used at over 1 GHz, and also expected as an inductor material for wide band CDMA type cellular phone.

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박막 인덕터를 이용한 영전압 스위칭 Clamp Voltage Buck 컨버터에 관한 연구 (A ZVS-CV Buck Converter using Thin-Film Inductor)

  • 김영재;김희준;오원석
    • 전자공학회논문지SC
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    • 제37권1호
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    • pp.56-63
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    • 2000
  • Buck 컨버터는 간단한 회로구조와 뛰어난 안정성으로 인하여 DC-DC 컨버터 중에서 가장 많이 이용되는 Topology이다. 그러나 박막 인버터를 기존의 buck 컨버터에 이용하는 경우 박막 인덕터의 인덕턴스가 기본적으로 작은 값이 되므로 최적의 리플전압을 얻기 위해서는 필요이상으로 주파수를 높일 필요가 있으며 이 경우 스위칭손실에 의한 컨버터의 효율저하를 초래하게 된다. 본 논문에서는 이러한 문제점을 해결하기 위하여 박막 인버터의 낮은 인덕턴스 값을 이용하여 스위치에 있어서 영전압 스위칭동작을 구현함으로써 컨버터의 효율을 상승시킬 수 있는 1W급 ZVS-CV Buck 컨버터를 제안하였으며, 실험과 손실해석을 통하여 박막 인덕터를 이용한 ZVS-CV Buck 컨버터의 정상동작을 확인하였고 기존의 Buck 컨버터 보다 효율이 약 4% 향상됨을 입증하였다.

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TaN/$Al_2O_3$ 집적화 박막 저항소자 개발에 관한 연구 (A study on integrated device TaN/$Al_2O_3$ thin film resistor development)

  • 김인성;조영란;민복기;송재성
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 하계학술대회 논문집 C
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    • pp.1476-1478
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    • 2002
  • In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor, inductor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by TaN(tantalum nitride) on alumina substrate. The TCR properties of the TaN films were discussed in terms of crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's annealing temperature and ambient annealing condition. Respectively, at $300{\sim}400^{\circ}C$ on vacuum and nitrogen annealed thin film resistor having a goof thermal stability and lower TCR properties then as deposited thin films expected for the application to the dielectric material of passive component.

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내부코일형 박막 인덕터의 특성과 열처리 효과 (Characteristics of Thin Film Inductors and Its Annealing After Effects)

  • 민복기;김현식;송재성
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 하계학술대회 논문집 D
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    • pp.1498-1499
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    • 1998
  • Thin film inductors of 10 mm ${\times}$ 10 mm with spiral pattern of 14 turns were fabricated by sputtering, photo-masking, and etching processes. Their impedence characteristics and annealing after effects were investigated. After magnetic annealing, the impedence characteristics of the inductors were improved at comparatively low frequencies, but the tendencies of it for thr frequency changes were almost same. These improvement was caused by the annihilation of the internal stresses of films, Uniaxial field annealed thin film inductor had an inductance of 1000 nH, resistance of 6 $\Omega$, and quality factor of 1 at 2 MHz.

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나선형 박막 인덕터의 주파수 특성 (Characteristics of spiral type thin film inductors for the frequency)

  • 박대진;민복기;김인성;송재성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.890-893
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    • 2004
  • In this study, Spiral inductors on the $SiO_2/Si$(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of 2 ${\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to 60${\mu}m$ and from 20 to 70 ${\mu}m$, respectively. Inductance and Q factor dependent on the frequency were investigated to analyze performance of spiral inductors.

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박막공진 여파기에 대한 기판위에서의 튜닝 (On-wafer Tuning of the TFBAR Ladder Filters)

  • 김종수;김건욱;구명권;육종관;박한규
    • 한국전자파학회:학술대회논문집
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    • 한국전자파학회 2002년도 종합학술발표회 논문집 Vol.12 No.1
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    • pp.3-6
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    • 2002
  • In this paper, Thin film bulk acoustic resonate.(TFBAR) fillers tuned by gold plated on-wafer inductors are presented. The air-gap type TEBAR is used with aluminum nitride(AIN) as piezoelectric material and platinum as top and bottom electrodes. Inductor equivalent model and modified Butterworth-Van Dyke(MBVD) model are employed for the frequency tuning of fabricated TFBAR bandpass filters. Fabricated inductor has inductance of 3 nH and Q factor of about 8 at 2 ㎓. It is clearly revealed that inductor tuning can enhance the bandwidth of ladder filters and improve out-of-band rejection characteristic around 10㏈.

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