• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.204-205
• /
• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• Journal of Information Display
• /
• v.2 no.3
• /
• pp.60-65
• /
• 2001

Lateral type poly-silicon field emitters were fabricated by utilizing the LOCOS (Local Oxidation of Silicon) process. For the implementation 'of an ideal field emission device with quasi-zero tunneling barrier, a new and fundamental approach has used conducted by introducing an intelligent carbon-based thin layer on the cathode tip surface via a field-assisted self-aligning of carbon (FASAC) process. Fundamental lowering of the turn-on field for the electron emission was feasible through the control of both the tip shape and surface barrier height.

• Proceedings of the KIPE Conference
• /
• 2001.10a
• /
• pp.80-83
• /
• 2001

As a LCD monitor is larger and thinner, a Cold Cathode Fluorescent Lamp (CCFL) for backlight in LCD monitor gradually becomes longer and thinner. The backlight of a large LCD monitor, however, has a limitation in its brightness. In this study, a parallel multi-lamp is used in order to supply enough brightness. Though the CCFLs are made through a detail and equal manufacturing process, they don't have exactly the same features individually in their brightness, frequency, voltage and current. Consequently, it is difficult to have equal brightness at an early lighting condition or during lighting time. In this paper, a parallel multi-lamp which can have the same output under the same condition is designed. For this, 18 inch LCD monitor with four lamps is used. An inverter for multi-lamp driving is also used in this study. The newly designed inverter shows more than $90\%$ efficiency in its brightness input and output. Besides, it is also available for a multi-drive of other lamps.

• The Korean Journal of Ceramics
• /
• v.3 no.2
• /
• pp.88-91
• /
• 1997

The diamondlike (DLC) films were deposited by RF plasma CVD system which had cathode consisting of mesh sheet, for the purpose of a protection from wear of OPC surface of the electrophotographic photosensitive body. Material charateristics and tribological properties of the films were also investigated and finally copying performance was evaluated with DLC deposited OPC samples. The surface resistance of the DLC film unaffected by the surface potential of the OPC was about $10^{11}{\Omega}$ and its hardness was about 1200 kg/$\textrm{mm}^2$. In this case the film showed typical material strcture of dimondlike hydrocarbon. The friction coefficient of the film was lowered to 0.2~0.3 at the optimum condition in this investigation and their wear resistant was inproved by DLC-deposition on the OPC surface. DLC-deposited OPC samples with a good copying performance without image flow and draft could be obtained at some depositing conditions.

• 한국신재생에너지학회:학술대회논문집
• /
• 2008.05a
• /
• pp.1-4
• /
• 2008

Fuel cells have the potential of providing several times higher energy storage densities than those possible using current state-of-the-art lithium-ion batteries, but current energy density of fuel cell system is not better than that of lithium-ion batteries. To achieve the high energy density, volume and weight of fuel cell system need to be reduced by miniaturizing system components such as stack, fuel tank, and balance-of-plant. In this paper, the thin flexible PCB (Printed circuit board) is used as a current collector to reduce the stack volume. Two end plates are made from light weight aluminum alloy plate. The plate surface is wholly oxidized through the anodizing treatment for electrical insulation. The opening rate of cathode plate hole is optimized through unit cell performance measurement of various opening rates. The performances are measured at room temperature and ambient pressure condition without any repulsive air supply. The active area of MEA is 10.08 $cm^2$ and active area per a unit cell is 1.68 $cm^2$. The peak power density is about 210 mW/$cm^2$ and the air-breathing planar stack of 2 Wis achieved as a small volume of 18 cc.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1533_1534
• /
• 2009

This paper presents an atmospheric micro glow plasma-jet device. The device consists of four components; a thin Ni anode, a porous alumina insulater, a stainless steel cathode and an aluminum case. The Ni anode is fabricated using micromachining technology. The anode has 10 holes, of which the hole diameter and the depth are $250{\mu}m$ and $60{\mu}m$, respectively. The discharge test is performed in nitrogen gas at atmospheric pressure for 20 kHz AC bias. The breakdown voltage is 3.5 kV at gas flow rate of 4 L/min and the the plasma-jet is blown out to ambient at 5.5 kV. In order to verify the characteristics of plasma, the current and the voltage of device are measured. The maximum temperature of plasma is $37^{\circ}C$. The plasma is well generated and stable at high voltage.

• 한국신재생에너지학회:학술대회논문집
• /
• 2009.06a
• /
• pp.295-298
• /
• 2009

Oxygen ionic conductors of CeScSZ electrolyte in SOFC unit cell are applied to anode and cathode as well as electrolyte to have the triple-phase-boundaries of electrochemical reaction, and it is required to decrease the sintering temperature of anode-supported electrolyte by the nanoscale of CeScSZ electrolyte powder. In this report, nanoscale CeScSZ electrolyte powder was synthesized by chemical synthesis method. The particle size, surface area and morphology of the powder were observed by SEM and BET. Thin film electrolyte of under $10{\mu}m$ was fabricated by tape casting using the synthesized CeScSZ electrolyte powder, and ionic conductivity and gas permeability of electrolyte film were evaluated. Finally the SOFC unit cell was fabricated using the anode-supported electrolyte prepared by a tape casting method and co-sintering, in which the active layer, measuring $20{\mu}m$, was introduced in the anode layer to provide a more efficient reaction. Electrochemical evaluations of the SOFC unit cell, including measurements such as power density and impedance, were performed and analyzed.

• 한국신재생에너지학회:학술대회논문집
• /
• 2007.06a
• /
• pp.191-195
• /
• 2007

In this study, we estimated the performance of PEMFC's unit cell as changing operating temperature in different inlet humidity condition at cathode side but anode dry, and tried to match experimental results with 1-dimensional simulation. We used $Nafion^{\circledR}112$ membrane and a self-manufactured PEMFC with active area of $25cm^{2}$ was used in this study. The range of operating temperature was $40{\sim}70^{\circ}C$ and oxygen through bubbled humidity chamber was supplied $0{\sim}80$% humidity condition as changing water temperature in humidity chamber. For figuring out governing equations, represent water contents in electrolyte membrane, the linear forward difference method was applied about time progress and quadratic central difference method was used about space progress. It was assumed that pressure terms were linearly changed due to thin electrolyte membrane. In low operating temperature condition, $40{\sim}60^{\circ}C$, increasing temperature rarely effected cell performance but we can see performance drop at $70^{\circ}C$. By modifying Henrry's constant and/or diffusion coefficient, the modified one-dimensional model was accomplished for calculation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.10
• /
• pp.936-940
• /
• 2005

IMML(Inorganic metal multi-layer) was used as cathode in the OLED devices to reduce the reflectance or ITO and increase the contrast ratio. Device structure was $ITO/{\alpha}-NPD/Alq_3:DCJTB/Alq_3/IMML/Al$. $Alq_3$ and DCJTB (4 - (dicyanomethylene) - 2 - ( 1 - propyls) 6 - methy 4H - pyrans) as host material lot red emission and red emitting guest material. IMML made three different layer: thin aluminum layer, aluminum layer doped with silicon monoxide, thick aluminum layer. The red OLED device with IMML showed the average reflectance of $4.97\%$, and then normal OLED with or without polarizer showed the average reflectance of $4.55\%$, $46\%$ at visible range from 380 nm to 780 nm. The brightness of OLED with IMML at 13 V was 5557 $cd/m^2$, and that of normal OLED with polarizer was 4872 $cd/m^2$. IMML could be the substitution for polarizer with same reflection, low cost, easy process in flat panel display market.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1214-1218
• /
• 2006

We introduced simple fabrication process for field emission devices based on carbon nanotubes (CNTs) emitters. Instead of using the ITO material as a transparent electrode, a metal (Au) with thickness of 5-20nm was used. Moreover, the ITO patterning process was eliminated by depositing metal layer, before the CNT printing process. In addition, the thin metal layer on photo resist (PR) layer was used as UV block. We fabricated the CNT field emission arrays of triode structure with simple process. And I-V characteristics of field emission arrays were measured. The maximum current density of $254{\mu}A/cm2$ was achieved when the gate and the anode voltage was kept 150V and 3000V, respectively. The distance between anode and cathode was kept constant.