• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.893-896
• /
• 2000

The SrBi$_2$Ta$_2$O$\sub$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF sputtering method. The SBT thin films deposited on substrate at 400-500[$^{\circ}C$]. SBT thin film deposited on Pt-coated electrodes have the cubic perovskite structure and polycrystalline state. With increasing annealing temperature from 600[$^{\circ}C$] to 850[$^{\circ}C$], flourite Phase was crystalized to 650[$^{\circ}C$] and Bi-layered perovskite phase was crystalized above 700[$^{\circ}C$]. The maximum remanent polarization is 11.73 ${\mu}$C/cm$^2$at 500[$^{\circ}C$] of substrate temperature and 750[$^{\circ}C$] annealing temperature for 30min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.18-19
• /
• 2006

The bismuth zinc niobate(BZN) pyrochlore thin films were fabricated on Pt(111)/Ti/$SiO_2$/p-Si(100) substrates using a reactive rf magnetron sputtering method at the conditions of working gas ratio Ar:$O_2$=90:10, substrate temperate $R.T{\sim}600^{\circ}C$, rf power 50 W. The dielectric constant, tunability, leakage current density and crystallinity of thin films changed with a substrate temperate. The BZN pyrochlore thin films sputtered with a substrate temperature of $600^{\circ}C$ and RTA at $800^{\circ}C$ showed a leakage current density lower than $10^{-8}\;A/cm^2$ at the range of ${\pm}300\;kV/cm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.05a
• /
• pp.69-71
• /
• 2005

In this study, Al doped ZnO(AZO)thin film were prepared on glass substrates by FTS(Facing targets Sputtering) system. We investigated electrical.. optical and structural properties of AZO thin film under the substrate temperature of the R.T. $100^{\circ}C$, $200^{\circ}C$, respectively, From XRD measurements it was found the crystallization of AZO thin film was increased with increasing the substrate temperature.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.92-92
• /
• 2011

IZTO and ITO thin films with a thickness of 200nm were deposited on Corning glass substrate to investigate the effects of substrate temperature on their electrical and optical properties by using pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt.%, ZnO 15 wt.%, SnO2 15 wt.%) and ITO (In2O3 90 wt.%, SnO2 10 wt.%). We investigated the structural, electrical, and optical properties of IZTO and ITO films. The structural and electrical properties of both films are sensitive on the substrate temperature. As the substrate temperature is increased, the electrical resistivity of ITO films is improved, but that of IZTO film increase over than $100^{\circ}C$. All IZTO and ITO thin films have good optical properties, which showed an average of transmittance over 80%. As a result, IZTO films can be a possible material for flexible display due to the low processing temperature.

• Korean Journal of Materials Research
• /
• v.21 no.1
• /
• pp.56-66
• /
• 2011

Multi-source evaporation is one of the methods to improve the thickness uniformity of thin films deposited by evaporation. In this study, a simulator for the relative thickness profile of a thin film deposited by a multi-source evaporation system was developed. Using this simulator, the relative thickness profiles of the evaporated thin films were simulated under various conditions, such as the number and arrangements of sources and source-to-substrate distance. The optimum conditions, in which the thickness uniformity is minimized, and the corresponding efficiency, were obtained. The substrate was a 5th generation substrate (dimensions of 1300 mm ${\times}$ 1100 mm). The number of sources and source-to-substrate distance were varied from 1 to 6 and 0 to the length of the major axis of the substrate (1300 mm), respectively. When the source plane, the area on which sources can be located, is limited to the substrate dimension, the minimum thickness uniformity, obtained when the number of sources is 6, was 3.3%; the corresponding efficiency was 16.6%. When the dimension of the source plane is enlarged two times, the thickness uniformity is remarkably improved while the efficiency is decreased. The minimum thickness uniformity, obtained when the number of sources is 6, was 0.5%; the corresponding efficiency was decreased to 9.1%. The expansion of the source plane brings about not only the improvement of the thickness uniformity, but also a decrement of the efficiency and an enlargement of equipment.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.14 no.3
• /
• pp.90-94
• /
• 2004

The variation of electrical properties of (Ba,Sr)$TiO_3$ [BST] thin films for Metal-Insulator-Semiconductor (MIS) capacitors was investigated. BST thin films were deposited on p-Si(100) substrates by the RF magnetron sputtering with temperature range of 500~$600^{\circ}C$. The dielectric properties of MIS capacitors consisting of AUBST/$SiO_2$/Si sandwich structure were measured for various conditions. We examined the characteristics of MIS capacitor with various oxygen pressure, substrate temperature and (Ba+Sr)/Ti ratio. It was found that the leakage current was reduced in MIS capacitor with high quality $SiO_2$ layer was grown on bare p-Si substrate by thermal oxidation. The BST MIS structure showed relatively high capacitance even though it is the combination of high-dielectric BST thin films and $SiO_2$ layer. The charge state densities of the MIS capacitors and Current-voltage characteristics of the MIS capacitor were investigated. By applying $SiO_2$ layer between BST thin films and Si substrate, low leakage current of $10^{-10}$ order was observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.05a
• /
• pp.35-38
• /
• 1995

Indium Tin Oxide(ITO) thin film is transparent to visible ray and conductive in electricity. It is seen that the samples made by the sputtering process have high transmission rate to visible ray and high adhesion , but the planar type magnetron sputtering process with is very well known in industrial region have a defect of partial erosion on the surface of target and a high loss of target and also since the substrate is positioned in plasma, the damage on thin film surface is caused by the reaction with plasma. In cylindrical magnetron sputtering system. it is known that the loss of target is little , the damage of thin film is very little and the adhesion of thin film with substrate is strong. In this study, we have made ITO thin film in the cylindrical DC magnetron system with the variable of substrate temperature , magnetic field, vacuum condution and the applied voltage. The general temperature for formation on ITO is asked at 350 $^{\circ}C$~400$^{\circ}C$ but we have made ITO is low temperature(80-150$^{\circ}C$) By studing electrical and optical properties of ITO thin fims made by varing several condition, we have searched the optimal condition for formation in the best ITO in low temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.2
• /
• pp.91-95
• /
• 2012

ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at $300^{\circ}C$ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.

• Electrical & Electronic Materials
• /
• v.8 no.3
• /
• pp.278-284
• /
• 1995

Thin fihn SnO$_{2}$ Gas Sensor was fabricated by electron-beam evaporation system and the target made by general firing method for the purpose of detecting gas components in air, especially methane gas. SnO$_{2}$ thin film was prepared on the polished alumina substrate which Pt interdigital electrode was precoated. The effects of annealing temperature and substrate temperature on the structural properties of SnO$_{2}$ thin film on glass were investigated using the X-ray diffraction. The good crystalline structure is formed when substrate temperature is 150[.deg. C] and annealing condition is 550[.deg. C], 1[hour]. And the sensing properties at various thickness of the SnO$_{2}$ thin film and the effects of PdCI$_{2}$ addition were also investigated. The good result is showed when the thickness is below 1000[.angs.] and the quantity of PdCI$_{2}$ addition is 4[wt%]. The thickness of SnO$_{2}$ thin film was measured by .alpha.-step and Elliopsometer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.03b
• /
• pp.17-17
• /
• 2010

Polycrystalline $CuInS_2$ thin films were performed from S/In/Cu Stacked elemental layer(SEL) method with post annealing. In thin method, the thin films were annealed in Vacuum of $10^{-3}$ torr or in S ambient. $CuInS_2$ thin films were manufctured by using the evaporation and the annealing with vacuum quartz furnace of sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate the annealing temperature and characteristics thereof were investigated. The physical properties of the thin film were investigated under various fabrication conditions including the substrate temperature annealing time by XRD, FE-SEM, and Hall measurement system.