• 제목/요약/키워드: thin film transistor

검색결과 955건 처리시간 0.029초

피에조를 이용한 코로나 방전과 펄스교류 코로나 방전을 이용한 정전기 제거장치의 비교 연구 (A Comparative Study on the Electrostatic Eliminator of Piezo Type Ionizer and Pulse AC Corona Type Ionizer)

  • 권승열;이동훈;최재욱
    • 한국안전학회지
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    • 제24권6호
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    • pp.50-54
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    • 2009
  • Ionizer is used for improving manufacturing process and reducing inferior goods in the clean room. As a general rule, neutralization of the electrostatic charge is most important to make TFT-LCD, PDP and OLED. Pulse AC-static eliminator with output voltage of about 10.5kV has been used these days as neutralization device. But this device has a problem with lower performance which was caused by particles-adhesion on the electrode when it has been used for a long time. So we studied to solve the problem with lower performance using high Frequency(72kHz) static eliminator which was produced by Piezo transformer device, and compared Pulse-AC type with Piezo-electronic device such as decay time and ion balance for 10 weeks periods. As a result of this study, we found that Piezo transformer device has been maintained normal condition for 10 weeks. Also, we made the rule by this study, normally Piezo transformer device has to clean the electrode during every 11th weeks.

Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor

  • Jung, Soon-Won;Na, Bock Soon;Baeg, Kang-Jun;Kim, Minseok;Yoon, Sung-Min;Kim, Juhwan;Kim, Dong-Yu;You, In-Kyu
    • ETRI Journal
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    • 제35권4호
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    • pp.734-737
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    • 2013
  • Nonvolatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on an organic thin-film transistor with inkjet-printed dodecyl-substituted thienylenevinylene-thiophene copolymer (PC12TV12T) as the active layer is developed. The memory window is 4.5 V with a gate voltage sweep of -12.5 V to 12.5 V. The field effect mobility, on/off ratio, and gate leakage current are 0.1 $cm^2/Vs$, $10^5$, and $10^{-10}$ A, respectively. Although the retention behaviors should be improved and optimized, the obtained characteristics are very promising for future flexible electronics.

Theoretical Studies on 2-Hexylthieno[3,2-b]thiophene End-Capped Oligomers for Organic Semiconductor Materials

  • Park, Young-Hee;Kim, Yun-Hi;Kwon, Soon-Ki;Koo, In-Sun;Yang, Ki-Yull
    • Bulletin of the Korean Chemical Society
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    • 제33권4호
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    • pp.1213-1219
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    • 2012
  • The reorganization energy and the spectroscopic properties of 2,6-bis(5'-hexyl-thieno[3,2-b]thiophene-2'- yl)naphthalene (DH-TNT) and 2,6-bis(5'-hexyl-thieno[3,2-b]thiophene-2'-yl)anthracene (DH-TAT), which are composed of an acene unit and alkylated thienothiophene on both sides, as organic materials for display devices were calculated and the results were compared with experimental values. The lower reorganization energy of the DH-TAT over the DH-TNT calculated by the density functional theory is attributed to a smaller vibrational distortion because of the heavier building block of DH-TAT, and it shows a good field effect performance over the DH-TNT. The calculated spectra and the other spectroscopic characteristic of the compounds are well consistent with those of observed results.

산화물 반도체 소재 및 소자 기술

  • 정우석;양신혁;유민기;박상희;조두희;윤성민;변춘원;정승묵;조경익;황치선
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 춘계학술발표대회
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    • pp.4.2-4.2
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    • 2009
  • 산화아연 (ZnO)으로 대표되는 산화물반도체는 최근 다양한 비정질 산화물반도체들이 개발되고 있고 높은 이동도와 저온공정 등의 장점으로, 실리콘 기반 박막소자 (비정질-Si, 또는 다결정-Si(LTPS) 트랜지스터)를 대체할 차세대 박막 트랜지스터 (Thin-Film Transistor)의 핵심소재로 관심을 모으고 있다. 또한, 산화물 반도체는 근본적으로 투명하므로, 투명 전극 및 투명 기판재료와 함께 투명 디스플레이도 구현시킬 수 있을 것이다. 그렇지만, 핵심 전자소재로서 향후 디스플레이 및 디바이스에 성공적으로 적용되기 위해서는 소자의 특성 뿐만아니라, 전기적 신뢰성(reliability)을 강화시킬 필요가 있다. 본 발표에서는 In-Ga-Zn-oxide (IGZO), Zn-Sn-oxide (ZTO), Zn-In-Sn-oxide (ZITO) 및 도핑원소를 첨가한 소재에 이르기까지 다양한 산화물 반도체 소재 기술과 소자의 신뢰성 향상을 위한 기술 등을 소개할 것이다.

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인쇄전자를 위한 롤투롤 프린팅 공정 장비 기술

  • 김동수;김충환;김명섭
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 춘계학술발표대회
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    • pp.15.2-15.2
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    • 2009
  • Manufacturing of printed electronics using printing technology has begun to get into the hot issue in many ways due to the low cost effectiveness to existing semi-conductor process. This technology with both low cost and high productivity, can be applied in the production of organic thin film transistor (OTFT), solar cell, radio frequency identification (RFID) tag, printed battery, E-paper, touch screen panel, black matrix for liquid crystal display (LCD), flexible display, and so forth. The emerging technology to manufacture the products in mass production is roll-to-roll printing technology which is a manufacturing method by printings of multi-layered patterns composed of semi-conductive, dielectric and conductive layers. In contrary to the conventional printing machines in which printing precision is about $50~100{\mu}m$, the printing machines for printed electronics should have a precision under $30{\mu}m$. In general, in order to implement printed electronics, narrow width and gap printing, register of multi-layer printing by several printing units, and printing accuracy of under $30{\mu}m$ are all required. We developed the roll-to-roll printing equipment used for printed electronics, which is composed of un-winder, re-winder, tension measurement system, feeding units, dancer systems, guide unit, printing unit, vision system, dryer units, and various auxiliary devices. The equipment is designed based on cantilever type in which all rollers except printing ones have cantilever types, which could give more accurate machine precision as well as convenience for changing rollers and observing the process.

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2.22-inch qVGA a-Si TFT-LCD Using a 2.5 um Fine-Patterning Technology by Wet Etch Process

  • Lee, Jae-Bok;Park, Sun;Heo, Seong-Kweon;You, Chun-Ki;Min, Hoon-Kee;Kim, Chi-Woo
    • Journal of Information Display
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    • 제7권3호
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    • pp.1-4
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    • 2006
  • 2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (a-Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated as the 2.5 um fine pattern formation technique is integrated with high thermal photo-resist (PR) development. In addition, a novel concept of unique a-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um fine-patterning is a considerably significant technology to obtain higher aperture ratio for higher resolution a-Si TFT-LCD panel realization.

Novel flexible reflective color media with electronic inks

  • Koch, Tim;Yeo, Jong-Souk;Zhou, Zhang-Lin;Liu, Qin;Mabeck, Jeff;Combs, Gregg;Korthuis, Vincent;Hoffman, Randy;Benson, Brad;Henze, Dick
    • Journal of Information Display
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    • 제12권1호
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    • pp.5-10
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    • 2011
  • A novel architecture and proprietary electronic inks were developed to provide disruptive digital-media solutions based on an electrokinetic technology platform. The flexible reflective electronic media (eMedia) was fabricated by imprinting three-dimensional microscale structures with a roll-to-roll manufacturing platform. The HP technologies enable the required attributes for eMedia, such as low power, transparency, print-quality color, continuous levels of gray, and lowcost scalability. Pixelation was also demonstrated by integrating with the prototype oxide thin-film transistor backplane, and the system architecture was further developed by stacking primary-colorant layers for color reflective-display application. The innovations described in this paper are currently being developed further for the eSkins, eSignage, and ePaper applications.

TN 모드와 FFS 모드에서 Pretilt Angle이 전기 광학 특성 및 동력학 안정성에 미치는 영향에 관한 연구 (Study on Electro-optic Characteristics and Dynamic Stability Depending on the Pretilt Angle for the Twisted Nematic(TN) and Fringe-field Switching(FFS) Mode)

  • 김미숙;정연학;김향율;김서윤;이승희
    • 한국전기전자재료학회논문지
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    • 제17권11호
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    • pp.1234-1240
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    • 2004
  • We studied on the electro-optic characteristics and dynamic stability according to an undesirably defined pretilt angle induced in high step coverage of pixel area for the Twisted Nematic (TN) / Fringe-Field Switching (FFS) mode. In case of the TN mode, LC directors twist reversely near the edges of thin-film-transistor and black matrix where the pretilt angle of the LC is not well defined. Therefore, the voltage-dependent dynamics of the LC in TN mode is unstable and shows the bad electro-optic characteristics. On the other hand, in case of the FFS mode, the LCs are twisted parallel to the bottom substrate by fringe electric field and the electro-optic characteristic is not influenced by the pretilt angle of the LC which is not well defined.

LED적용 TFT-LCD 외관 백색 균일도 향상을 위한 광선 추적 시뮬레이션 연구 (The Study of White uniformity improvement in TFT LCD using LED)

  • 이상환;이준신;이승재
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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    • pp.1665-1666
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    • 2006
  • TFT-LCD(Thin Film Transistor Liquid Crystal Display)는 표시장치로서 실용화된 후 많은 상품에 적용중이다. 그러나, LCD는 자체 발광능력이 없으므로 그후면에서 LCD 화면을 밝혀주는 BLU(Backlight Unit)를 필요로 한다. BLU는 내부 광원으로 밝기가 균일한 평면광을 만들어 LCD 화면을 균일하게 면조사하는 역할을 한다. LCD가 적용되는 분야중 Note PC에는 광원으로 CCFL(Cold Cathode Fluorescent Lamp)가 적용되어 왔지만, 최근 고휘도, 박형화, 저소비 전력을 달성하기 위해 CCFL로는 한계가 있어 LED(Light Emitting Diode)를 적용한 BLU를 제작하기 위한 연구가 진행되고 있다. 본 연구에서는 점광원인 LED 적용한 LED에 있어서 요구되는 휘도 균일성을 향상시키기 위해서는 LED광원이 적용된 BLU의 외관 품질 향상을 위한 도광판 입광부 구조 최적화를 광추적 Simulation을 통해 예측하고 향상시킬 수 있는 구조를 제안한다. Simulation결과, 외관품질 개선을 위해 도광판 입광면에 130도의 Serration과 휘도를 향상하기 위해 도광판 밑면에 렌즈 형상의 바 구조를 도출해 적용한 결과 외관품질향상과 휘도향상을 얻었다.

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MNT BLU의 효율 향상을 위한 프리즘 도광판에 대한 연구 (The Study of Prism-Patternde Light Guide Plate for increase of efficiency in Monitor Back Light Unit)

  • 박두성;이미선;박기덕;오영식;김서윤;임영진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.502-503
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    • 2005
  • 본 연구에서는 TFT-LCD(Thin Film Transistor-Liquid Crystal Display)의 배경광원인 BLU(Back Light Unit)의 고효율화, 고품질화를 통한 원가 절감을 달성하기 위해 BLU의 대표적 핵심부품중에 하나인 프리즘 시트를 사용하지 않는 구조의 MNT용 BLU를 개발하는데 목적을 두었다. 고효율의 BLU를 만들기위하여 17인치 BLU의 도광판의 상, 하면에 Prism 형상을 구현하였으며, 광학적 시뮬레이션을 통하여 먼저 가능성을 검토하였고, UV에 반응하는 Resin을 경화시키는 방법을 이용하여 일반 도광판에 프리즘형상을 각인(Imprint)시키는 방법으로 실물을 재현하였다. 실험 결과 프리즘 시트를 사용하지 않는 구조의 MNT용 17인치 BLU에서 중심휘도 4,984nit, 균일도 70% 달성하였다.

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