• 한국전자파학회논문지
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• 제24권2호
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• pp.214-217
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• 2013

본 논문에서는 박막 필름의 유전율 측정이 가능한 슬랏을 갖는 도파관형 공진기를 제안하였으며, 시료에 의한 공진 주파수 천이 현상으로부터 유전율을 측정한다. 이를 위하여 공진기 한 쪽에 얇은 슬랏을 두고, 그 위에 부착된 시료에 의해 공진기 내부 전자기장 분포가 섭동되어 공진 주파수 천이 현상이 발생될 수 있도록 하였다. 유전율에 따른 공진 주파수 천이량은 수치 해석을 통하여 계산하였으며, 이를 기반으로 2~3 GHz 대역에서 $65{\mu}m$ 두께의 박막 필름 유전율을 측정하였다. 측정 결과, 유전율은 평균 $3.3492{\pm}0.0605$(표준오차)를 보였으며, 유전체 공진기나 도파관 프로브 방법과 같은 다른 측정법들과 상호 비교를 통해 제안 방법의 유효성을 검증하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.703-706
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• 2002

Piezoelectric thin film such as ZnO and AlN can be applicable to FBAR (Film Bulk Acoustic Resonator) device of thin film type and FBAR can be applicable to MMIC. The characteristic of FBAR device is variable according to the deposition conditions of piezoelectric thin film when preparation of thin film by sputtering method. In this study, we prepared ZnO thin film for FBAR using Facing Targets Sputtering apparatus which can be deposited fine Quality thin film because temperature increase of substrate due to the bombardment of high-energy particles can be restrained. And crystalline and c-axis preferred orientation of ZnO thin film with deposition conditions was investigated by XRD.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.389-392
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• 1996

The recent development of high temperature superconducting epitaxial thin film offer great potential for planar passive microwave application such as ring resonator, filters, transmission lines, and antennas. This paper describes the fundamental properties of Microstrip Band-Pass Filter using HTS Thin Film and its application to microwave devices. In order to fabricate HTS microstrip multiple filters, We have grown laser ablated HTS thin films, patterned by photolithographic process and wet etching processes intro HTS microwave devices.

• 한국세라믹학회지
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• 제43권1호
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• pp.42-47
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• 2006

In this paper, we prepared high-quality ZnO thin films for application of FBAR (Film Bulk Acoustic Resonator) by using pulse DC magnetron sputtering. To prevent the formation of low dielectric layers between metal and piezoelectric layer, Ru film of 30 nm thickness was used as a buffer layer. In addition we investigated the influence of annealing condition with various temperatures. As the annealing temperature increased, the crystalline orientation with the preference of (002) c-axis and resistance properties improved. The single resonator which was fabricated at $500^{\circ}C$ exhibited the resonance frequency and the return loss 0.99 GHz and 15 dB, respectively. This work demonstrates potential feasibility for the use of thin film Ru buffer layers and the optimization of annealing condition.

• 한국전자파학회논문지
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• 제14권4호
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• pp.323-329
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• 2003

본 논문에서는 유전자 알고리즘을 이용한 FBAR(Thin-Film Bulk Acoustic Resonator)에서의 물질 상수 추출 기법을 제안하였다. 제안된 기법은 유전자 알고리즘을 적용하여 FBAR의 입력 임피던스로부터 물질 상수를 추출하는 방법이다. 유전자 알고리즘의 적합도 함수를 결정하기 위해 물질 상수 변화가 FBAR의 임피던스 특성에 미치는 영향을 알아본 후, FBAR의 입력 임피던스로부터 구해지는 직렬/병렬 공진 주파수와 FBAR 대역폭으로 적합도를 평가하였다. 유전자 알고리즘의 흐름도와 제안된 물질 상수 추출 과정에 대해 설명하였고, 본 기법의 타당성을 검증하기 위해 물질 상수 추출 결과를 제시하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1546-1548
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• 1998

Dual mode ring resonators(DMRR) have been fabricated using laser ablated $YBa_2Cu_3O_{7-x}$ superconducting thin films. The transition temperature of YBCO thin films were 85 - 88 K and the film thicknesses were about 5,000 $\AA$. Dual mode ring resonators were patterned by standard photolithography process and wet-etching. Then two-layer metal thin films (Ti/Ag) have been deposited for the ground plane on the back side of substrate by e-beam and thermal evaporation. The input/output feedline angles of each resonator were $60^{\circ}$, $100^{\circ}$, $180^{\circ}$. A network analyzer was used for testing the performance of the resonators in the frequency range of 6-13 GHz at 77 K.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2004년도 제26회 학술발표회 초록집
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• pp.177-177
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• 2004

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.477-480
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• 2004

We studied the characteristics of impedance and electromechanical coupling coefficient in ZnO and AIN thin films by using resonance frequency spectrum method. The response peak of impedance decreased with the decrease of thickness of piezoelectrics, the number of mode of response peak increased with the increase of substrate thickness. An error of $k_{t}^{2}$ estimated from input $k_{t}^{2}$ increased as the thickness of piezoelectrics decreased and the thickness of substrate increased. Also, the error was increased in case of a large acoustic impedance of substrate. It was found that the composite resonator operating in optimized condition could be designed through the resonance frequency spectrum analysis of composited resonator consisted of piezoelectric thin film and substrate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.460-463
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• 2003

We report the microwave reflection coefficient $S_{11}$ of copper(II)-phthalocyanine(CuPc) using a near-field microwave microscope(NSMM) in order to understand the intrinsic electromagnetic properties of organic materials. For a NSMM system, a high-quility microstip resonator coupled with a dielectric resonator was used. The reflection coefficient $S_{11}$ was changed by the preparation conditions of CuPc thin films. We compared the reflection coefficient with crystal phase, surface morphology, UV absorption spectra and x-ray diffraction results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.275-278
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• 2003

The aim of the study is to scrutinize the relationship between the area of resonance and center frequency with varying thickness by analyzing the characteristics of 2-port resonator. This was done through ideal design using Leach model equivalent model modified Mason model equivalent circuit for the application of bandpass filter high-frequency band with resonator Moreover, through the design of ladder-type BPF, we were able to observe changes in bandwidth, resonation, out-of-band rejection depending on the number and area of resonator.