• 마이크로전자및패키징학회지
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• 제6권1호
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• pp.23-29
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• 1999

전착법(EPD)에 의한 음극지지형 SOFC 단전지용 전해질 제조를 위하여 NiO-YSZ 다공성 기판 위에 극성이 서로 다른 전착용액을 사용하여 안정화 지르코니아 균일막 형성을 위한 전착조건과 막특성을 조사하였다. 알콜계 용액과는 달리 수계 용액에서 정전류, 0.138mA/$\textrm{cm}^2$이상에서 전극반응으로 생성한 기포에 의한 막결함이 생성하였으며 막무게 증가율이 감소하였다. 균일막 형성은 알콜계 용액에서 전극반응없이 안정한 전압특성을 보이는 정전류 0.035 mA/$\textrm{cm}^2$를 10초간 인가하였을 때 얻어졌다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 추계학술대회 논문집
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• pp.579-580
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• 2012

• Transactions on Electrical and Electronic Materials
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• 제15권4호
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• pp.189-192
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• 2014

Yttria-stablized zirconia (YSZ) is the most commonly used electrolyte material, but the reduction in working temperature leads to insufficient ionic conductivity. Ceria based electrolytes (GDC) are more attractive in terms of conductivity at low temperature, but these materials are well known to be reducible at very low oxygen partial pressure. The reduction of electrolyte resistivity is necessary to overcome cell performance losses. So, thin YSZ/GDC bilayer technology seems suitable for decreasing the electrolyte resistance at lower operating temperatures. Bilayer electrolytes composed of a galdolinium-doped $CeO_2$ ($Ce_{0.9}Gd_{0.1}O_{1.95}$, GDC) layer and yttria-stabilized $ZrO_2$ (YSZ) layer with various thicknesses were deposited by RF sputtering and E-beam evaporation. The bilayer electrolytes were deposited between porous Ni-GDC anode and LSM cathode for anode-supported single cells. Thin film structure and surface morphology were investigated by X-ray diffraction (XRD), using $CuK{\alpha}$-radiation in the range of 2ce morphol$^{\circ}C$. The XRD patterns exhibit a well-formed cubic fluorite structure, and sharp lines of XRD peaks can be observed, which indicate a single solid solution. The morphology and size of the prepared particles were investigated by field-emission scanning electron microscopy (FE-SEM). The performance of the cells was evaluated over $500{\sim}800^{\circ}C$, using humidified hydrogen as fuel, and air as oxidant.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.84.2-84.2
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• 2011

In this research, two thin film deposition techniques, Atomic Layer Deposition and Sputtering are carried out for the fabrication of Yittria Stabilized Zirconia electrolyte for thin film Solid Oxide Fuel Cell. Zirconium to Yittrium ratio for both cases is about 1/8. Scanning Electron Microscope(SEM) image shows that the growth rate per hour for Atomic Layer Deposition is faster than for sputtering. X-ray Photo-electron Spectroscopy(XPS) shows that the peaks of both Zirconia and Yittria shift towards higher bending energy for the case of Atomic Layer deposition and thus are more strongly attached to the substrate. Later, Nyquist plot was used to compare the conductivity of Yittria Stabilized Electrolyte for both cases. The conductivity at $300^{\circ}C$ for Atomic Layer Deposited Yittria Stabilized Zirconia is found to be $5{\times}10^{-4}S/cm$ while that for sputtered Yittria Stabilized Zirconia is $2{\times}10^{-5}S/cm$ at the same temperature. The reason for better performance for Atomic Layered YSZ is believed to be the Nano-structured layer fabrication that aids in along the plane conduction as compared to the columnarly structured Sputtered YSZ.

• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.327-331
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• 2016

Resistive random access memory (ReRAM) of metallic conduction channel mechanism is based on the electrochemical control of metal in solid electrolyte thin film. Amorphous chalcogenide materials have the solid electrolyte characteristic and optical reactivity at the same time. The optical reactivity has been used to improve the memory switching characteristics of the amorphous $As_2Se_3$-based ReRAM. This study focuses on the formation of holographic lattices patterns in the amorphous $As_2Se_3$ thin film for straight conductive channel. The optical parameters of amorphous $As_2Se_3$ thin film which is a refractive index and extinction coefficient was taken by n&k thin film analyzer. He-Cd laser (wavelength: 325 nm) was selected based on these basic optical parameters. The straighten conduction channel was formed by holographic lithography method using He-Cd laser.$ Ag^+$ ions that photo-diffused periodically by holographic lithography method will be the role of straight channel patterns. The fabricated ReRAM operated more less voltage and indicated better reliability.

• 한국진공학회지
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• 제9권1호
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• pp.42-47
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• 2000

The amorphous vanadium oxide thin films for thin-film rechargeable lithium batteries were fabricated by r.f. reactive sputtering at room temperature. As the experimental parameter, oxygen partial pressure was varied during sputtering. At high oxygen partial pressures(>30%), the as-deposited films, constant current charge/discharge characteristics were carried out in 1M $LiPF_6$, EC:DMC+1:1 liquid electrolyte using lithium metal as anode. The specific capacity of amorphous $V_2O_5$ after 200cycles of operation at room temperature was higher compared to crystalline $V_2O_5$. The amorphous vanadium oxide thin film and crystalline film showed about 60$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$ and about 38$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$, respectively. These results suggest that the battery capacity of the thin film vanadium oxide cathode strongly depends on the crystallinity.

• 한국세라믹학회지
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• 제42권12호
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• pp.827-832
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• 2005

In this study, thin electrolyte layer was prepared by 8YSZ ($8mol\%$ Yttria-Stabilized Zirconia) slurry dip and sol coating onto the porous anode support in order to reduce ohmic resistance. 8YSZ polymeric sol was prepared from inorganic salt of nitrate and XRF results of xerogel powder exhibited similar results $(99.2\pm1wt\%)$ compared with standard sample (TZ-8YS, Tosoh Co.). The dense and thin YSZ film with $1{\mu}m$ thickness was synthesized by coating of 0.7M YSZ sol followed by heat-treatment at $600^{\circ}C$ for 1 h. Thin film electrolyte sintered at $1400^{\circ}C$ showed no gas leakage at the differential pressure condition of 3 atm.

• 공업화학
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• 제19권1호
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• pp.117-121
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• 2008

본 연구에서는 정전분무법을 이용하여 YSZ 박막을 제조하였다. 제조된 박막은 제조시 전구체 용액, 지지체 온도 등에 크게 영향을 받았으며, 특히 지지체 온도가 $400^{\circ}C$일 때 치밀한 YSZ 박막을 형성할 수 있었다. 최적조건 하에서 정전분무법을 활용하면 약 $12{\mu}m/h $의 속도로 치밀한 YSZ 박막을 형성할 수 있었다. 제조된 박막은 XRD, FE-SEM, EDX 등을 이용하여 분석하였다.

• 한국세라믹학회지
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• 제44권10호
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• pp.589-595
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• 2007

Physical properties of sputtered YSZ thin film electrolytes on anode thin film by spray pyrolisis has been investigated to realize the porous electrode and dense electrolyte multilayer structure for micro solid oxide fuel cells. It is shown that for better crystallinity and density, YSZ need to be deposited at an elevated temperature. However, if pure NiO anode was used for high temperature deposition, massive defects such as spalling and delamination were induced due to high thermal expansion mismatch. By changing anode to NiOCGO composite, defects were significantly reduced even at high deposition temperature. Further research on realization of full cells by processing hybridization and cell performance characterization will be performed in near future.

• 한국세라믹학회지
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• 제36권8호
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• pp.791-798
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• 1999

다공성 NiO-YSZ 기판위에 전착법(EPD; Electrophoretic Deposition)법과 담금(Dip-coating)법에 의해 음극지지형 고체연료전지용 이트리아 안정화 지르코니아 박막 제조법을 연구하였다. 이를 위해 슬러리 농도 및 시간에 따른 박막의 무게, 박막의 결함 및 미세구조변화에 영향을 주는 제조조건들을 살펴 봄으로써 전착법과 담금법의 차이를 보았다. 담금법에서는 막생성 초기인 30초까지 막의 무게가 증가하지만 그 후에는 탈락이 일어나 시간을 증가하여도 막의 무게가 오히려 감소하였다. 전착법에서는 임계 인가전류 이상에서 시간에 따라 막의 무게가 증가하고 균일하고 치밀한 막이 형성하였다 전장이 매우 낮은 0.035 mA/$cm^2$ 의 정전류를 120초 이상 장시간 인가하면 막의 흘러내림(sagging)으로 인한 결함이 발생하였다. 전착법에 의해 균일하고도 치밀하게 가스 누출성이 없는 음극지지형 고체산화물 연료전지에 적합한 전해질 박막을 제조할 수 있었다.