• Macromolecular Research
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• 제12권4호
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• pp.391-398
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• 2004

Thick-film photolithography is a new technology that combines lithography processes, such as exposure and development, with the conventional thick-film process applied to screen-printing. In this study, we developed a low-temperature cofireable silver paste applicable for thick-film processing to form fine lines using photolitho-graphic technologies. The optimum paste composition for forming fine lines was investigated. The effect of processing parameters, such as the exposing dose, had on the fine-line resolution was also investigated. As the result, we found that the type of polymer and monomer, the silver powder loading, and the amount of photoinitiator were the main factors affecting the resolution of the fine lines. The developed photoimageable silver paste was printed on a low-temperature cofireable green sheet, dried, exposed, developed in an aqueous process, laminated, and then fired. Our results demonstrate that thick-film fine lines having widths < 20 $\mu\textrm{m}$ can be obtained after cofiring.

• 한국세라믹학회지
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• 제45권11호
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• pp.739-743
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• 2008

Microfluidic device can be applied in a wide range of chemical and biological technology. In this paper, ceramic-based T-type passive mixers for microfluidic applications were fabricated by LTCC process combined with thick film photolithography. The base ceramic material in thick film was amorphous cordierite $((Mg,Ca)_2Al_4Si_5O_{18})$ and photoimageable polymers were added to give a photosensitivity. Two types of passive mixer, which showed the channel width of 1.0 mm and $200{\mu}m$, respectively, were designed considering mixing efficiency in the channel and their microfluidic properties were discussed in detail.

• 한국세라믹학회지
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• 제41권4호
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• pp.313-322
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• 2004

후막 광식각 기술은 스크린 인쇄 등의 일반적인 후막공정에 노광 및 현상 등의 리소그라피 공정을 접목시킨 새로운 기술이다. 본 연구에서는 후막 광식각 기술을 이용하여 미세라인을 형성할 수 있는 저온동시소성용 Ag 페이스트를 개발하였다. 페이스트를 구성하는 Ag분말과 폴리머, 모노머, 광개시제 등의 양을 조절하여 미세라인을 형성할 수 있는 최적 조성을 연구하였으며. 또한 노광량과 같은 공정변수가 미세라인 형성에 미치는 영향을 연구하였다. 실험결과 폴리머/모노머비, Ag 분말 중량비, 광개시제의 양 등이 미세라인의 해상도에 영향을 미치는 주요 인자임을 확인할 수 있었다. 개발된 감광성 Ag 페이스트를 저온동시소성용 그린 시트에 전면 인쇄한 후 건조, 노광, 현상, 적층, 소성 과정을 통하여, 소성 후 20$\mu\textrm{m}$ 이하의 선폭을 가지는 후막 미세라인을 형성할 수 있었다.

• 한국표면공학회지
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• 제42권5호
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• pp.216-219
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• 2009

A surface acoustic wave (SAW) filter structure was fabricated employing $4{\mu}m$ thick nanocrystalline diamond (NCD) and $2.2{\mu}m$ thick ZnO films on Si wafer. The NCD film was deposited in an $Ar/CH_4$ gas mixture by microwave plasma chemical vapor deposition method. The ZnO film was formed over the NCD film in an RF magnetron sputter using ZnO target and $Ar/O_2$ gas. On the top of the two layers, copper film was deposited by the RF sputter and inter digital transducer (IDT) electrode pattern (line/space : $1.5/1.5{\mu}m$) was defined by the photolithography including a lift-off etching process. The fabricated SAW filter exhibited the center frequency of 1.66 GHz and the phase velocity of 9,960 m/s, which demonstrated that a giga Hertz SAW filter can be realized by utilizing the nanocrystalline diamond thin film.

• Journal of Magnetics
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• 제10권4호
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• pp.163-170
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• 2005

The RF integrated noise filters are fabricated by photolithography. The stack for the electromagnetic noise filters consists of the nano-granular ($Co_{41}Fe_{38}AI_{13}O_8$) soft magnetic film / $SiO_2$ / Cu transmission line / seed layer (Cu/Ti) / $SiO_2$-substrate. A good signal-attenuation feature along with a low signal-reflection feature is observed in the present filters. Especially in the noise filter incorporated with a $Co_{41}Fe_{38}AI_{13}O_8$ magnetic film with lateral dimensions of $2000{\mu}m$ wide, 15 mm long and $1{\mu}m$ thick, the maximum magnitude of signal attenuation reaches -55 dB, and the magnitude of signal reflection is below -10 dB in the overall frequency range. And this level of signal attenuation is much larger than that of a noise filter incorporated with a Fe magnetic film.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.214-217
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• 1999

We investigated the quench characteristics of meander line type resistive superconducting fault current limiters based on YBCO thin films grown on 2" diameter LaAlO$_3$ substrates. A gold layer was deposited onto the 0.4 ${\mu}$ m thick YBCO film to disperse the heat generated at hot spots, prior to patterning into 1 mm wide meander lines by photolithography. The limiters were tested with simulated fault currents of various amplitudes. The quench started at 10 A and was completed within 1 msec at the fault current of 65 A$_{peak}$. The dynamic quench characteristics were explained based on the heat conduction within the film and the heat transfer between the film and the surrounding liquid nitrogen. The heat transfer coefficient per unit area was estimated to be 3.0 W/cm$^2$K.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.91-94
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• 1999

A new type of high-T$_c$ superconducting Josephson junctions has been prepared by Ar ion beam etching and electron beam lithography. YBa$_2Cu_3O_{7-x}$ (YBCO) films deposited on (001) SrTiO$_3$ single crystal substrate by pulsed laser deposition were patterned by Ar ion milling with photolithography. The narrow slit with a electroresist mask, about 1000 ${\AA}$ wide, was constructed over a 3 ${\sim}$ 5 ${\mu}$m bridge of a 1200-${\AA}$-thick YBCO film by electron beam lithography. The slit was then etched by the Ar ion beam to form a damaged 600-${\AA}$-thick YBCO. Thus prepared structure forms an S-N-S (YBCO - damaged YBCO - YBCO) type Josephson junctions. Those junctions exhibit RSI-like I-V characteristics at 77 K. The properties of the Josephson junctions such as I$_c$ R$_N$, and J$_c$ were characterized.

• Journal of Korean Vacuum Science & Technology
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• 제5권1호
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• pp.11-18
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• 2001

Dielectric passivation effects on the EM(electromigration) have been a great interest with recent ULSI and multilevel structure tends in thin film interconnections of a microelectronic device. SiO$_2$, PSG(phosphosilicate glass), and Si$_3$N$_4$ passivation materials effects on the EM resistance were investigated by utilizing widely used Al-1%Si thin film interconnections. A standard photolithography process was applied for the fabrication of 0.7㎛ thick 3㎛ wide, and 200㎛ ~1600㎛ long Al-1%Si EM test patterns. SiO$_2$, PSG, and Si$_3$N$_4$ dielectric passivation with the thickness of 300 nm were singly deposited onto the Al-1%Si thin film interconnections by using an APCVD(atmospheric pressure chemical vapor deposition) and a PECVD(plasma enhanced chemical vapor deposition) in order to investigate the passivation materials effects on the EM characteristics. EM tests were performed at the direct current densities of 3.2 $\times$ 10$\^$6/∼4.5 $\times$ 10$\^$6/ A/cm$^2$ and at the temperatures of 180 $\^{C}$, 210$\^{C}$, 240$\^{C}$, and 270$\^{C}$ for measuring the activation energies(Q) and for accelerated test conditions. Activation energies were calculated from the measured MTF(mean-time-to-failure) values. The calculated activation energies for the electromigration were 0.44 eV, 0.45 eV, and 0.50 eV, and 0.66 eV for the case of nonpassivated-, Si$_3$N$_4$passivated-, PSG passivated-, and SiO$_2$ passivated Al-1%Si thin film interconnections, respectively. Thus SiO$_2$ passivation showed the best characteristics on the EM resistance followed by the order of PSG, Si$_3$N$_4$ and nonpassivation. It is believed that the passivation sequences as well as the passivation materials also influence on the EM characteristics in multilevel passivation structures.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.444-444
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• 2011

Recently, patterned magnetic films and elements attract a wide interest due to their technological potentials in ultrahigh-density magnetic recording and spintronic devices. Among those patterned magnetic structures, magnetic anti-dot patterning induces a strong shape anisotropy in the film, which can control the magnetic properties such as coercivity, permeability, magnetization reversal process, and magneto-resistance. While majority of the previous works have been concentrated on anti-dot arrays with a single magnetic layer, there has been little work on multilayered anti-dot arrays. In this work, we report on study of the magnetic properties of bilayered anti-dot system consisting of upper perforated Co layer of 40 nm and lower continuous Ni layer of 5 nm thick, fabricated by photolithography and wet-etching processes. The magnetic hysteresis (M-H) loops were measured with a superconducting-quantum-interference-device (SQUID) magnetometer (Quantum Design: MPMS). For comparison, investigations on continuous Co thin film and single-layer Co anti-dot arrays were also performed. The magnetic-domain configuration has been measured by using a magnetic force microscope (PSIA: XE-100) equipped with magnetic tips (Nanosensors). An external electromagnet was employed while obtaining the MFM images. The MFM images revealed well-defined periodic domain networks which arise owing to the anisotropies such as magnetic uniaxial anisotropy, configurational anisotropy, etc. The inclusion of holes in a uniform magnetic film and the insertion of a uniform thin Ni layer, drastically affected the coercivity as compared with single Co anti-dot array, without severely affecting the saturation magnetization ($M_s$). The observed changes in the magnetic properties are closely related to the patterning that hinders the domain-wall motion as well as to the magneto-anisotropic bilayer structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.359-359
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• 2014

In this study, surface plasmon resonance structures for the selective and the enhanced transmission of infrared light were designed. In order to relieve the large discontinuity of refractive index between air and metal hole array, $Si_3N_4$ was used as the impedance matching layer. Experimental parameter were calculated and determined in advance by the rigorous coupled wave analysis (RCWA) simulation, and then the experiment was carried out. A 2-dimensional metal hole array structures were patterned on the size of $1{\times}1cm^2$ GaAs substrate using photolithography process, and 5 nm thick Ti, 50 nm thick Au were deposited by E-beam evaporator, respectively. Subsequently, $Si_3N_4$ films with various thicknesses (150, 350, 550, and 750 nm) were deposited by plasma enhanced chemical vapor deposition (PECVD). For the comparison, transmittance of specimens with and without $Si_3N_4$ was measured using Fourier transform infrared spectroscopy (FTIR) in the range of $2.5-15{\mu}m$. Furthermore, the surface and the cross-sectional images were collected from the specimens by scanning electron microscopy (SEM). From the results, it was demonstrated that the transmittance was enhanced up to 80% by the deposition of 750 nm $Si_3N_4$ at $6.23{\mu}m$. It has advantage of enhanced transmission despite the simple fabrication process.