• 한국생산제조학회지
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• 제24권5호
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• pp.475-480
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• 2015

Ultrasonic atomic force microscopy (Ultrasonic-AFM) has been used to investigate the elastic property of the ultra-thin coating layer in a thin-film system. The modified Hertzian theory was applied to predict the contact resonance frequency through accurate theoretical analysis of the dynamic characteristics of the cantilever. We coat 200 nm thick Aluminum and Titanium thin films on the substrate using the DC Magnetron sputtering method. The amplitude and phase of the contact resonance frequency of a vibrating cantilever varies in response to the local stiffness constant. Ultrasonic-AFM images were obtained using the variations in the elastic property of the materials. The morphology of the surface was clearly observed in the Ultrasonic-AFM images, but was barely visible in the topography. This research demonstrates that Ultrasonic-AFM is a promising technique for visualizing the distribution of local stiffness in the nano-scale thin coatings.

• 한국생산제조학회지
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• 제26권3호
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• pp.344-349
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• 2017

In this study, we developed a process technology to fabricate RFID tag antennas using a one-sheet inlay micro-pattern forming process by press-molding RFID tag antennas on insulation sheet layers, such as polymer films, using ultrasonic longitudinal vibration. In addition, a fine pattern applicable for RFID tag antennas was manufactured using a $25{\mu}m$ thick thin-plate square wire; this is in contrast to the method that uses a conventional round wire. The developed ultrasonic indentation process can be used to fabricate fine pattern of the RFID antenna using one piece of equipment. The simplified manufacturing process technology has a shorter manufacturing time and is more economical. The developed RFID tag antenna forming technique involves pressing the $25{\mu}m$ square wire directly on the thin sheet insulation sheet of maximum thickness $200{\mu}m$, using a 60 kHz ultrasonic tool horn.

• 제어로봇시스템학회논문지
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• 제13권7호
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• pp.616-623
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• 2007

A dual micro gas sensor array was fabricated using nano sized $SnO_2$ thin films which had good sensitivities to CO and combustible gases, or $H_2S$ gas for air quality sensors in automobile. The already existed air quality sensor detects oxidizing gases and reducing gases, the air quality sensor(AQS), located near the fresh air inlet detected the harmful gases, the fresh air inlet door/ventilation flap was closed to reduce the amount of pollution entering the vehicle cabin through HVAC(heating, ventilating, and air conditioning) system. In this study, to make $SnO_2$ thin film AQS sensor, thin tin metal layer between 1000 and $2000{\AA}$ thick was oxidized between 600 and $800^{\circ}C$ by thermal oxidation. The gas sensing layers such as $SnO_2$, $SnO_2$(pt) and $SnO_2$(+CuO) were patterned by metal shadow mask for simple fabrication process on the silicon substrate. The micro gas sensors with $SnO_2$(+Pt) and $SnO_2$(CuO) showed good selectivity to CO gas among reducing gases and good sensitivity to $H_2S$ that is main component of bad odor, separately.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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• pp.19-25
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• 2000

Dielectric polymer films produced from benzocyclobutene (BCB) formulations (CYCLOTENE＊ family resins) are known to possess many desirable properties for microelectronic applications; for example, low dielectric constant and dissipation factor, low moisture absorption, rapid curing on hot plate without reaction by-products, minimum shrinkage in curing process, and no Cu migration issues. Recently, BCB-based products for thick film applications have been developed, which exhibited excellent dissipation factor and dielectric constant well into the GHz range, 0.002 and 2.50, respectively. Derived from these properties, the applications are developed in: bumping/wafer level packaging, Ga/As chip ILD, optical waveguide, flat panel display, and lately in BCB-coated Cu foil for build-up board. In this paper, we review the relevant properties of BCB, then the application areas in bumping/wafer level packaging and BCB-coated Cu foil for build-up board.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.45-48
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• 2008

The mechanical behavior of small-sized materials has been investigated for many industrial applications, including MEMS and semiconductors. It is challenging to obtain accurate mechanical properties measurements for thin films due to several technical difficulties, including measurement of strain, specimen alignment, and fabrication. In this work, we used the micro-tensile testing unit with the real-time DIC (Digital Image Correlation) strain measurement system. This system has advantages of real time strain monitoring up to 50 nm resolution during the micro-tensile test, and ability to measure the young's modulus and Poisson's ratio at the same time. The mechanical properties of SCS (Single Crystal Silicon) are measured by uniaxial tension test from freestanding SCS which are $2.5{\mu}m$ thick, $200-500{\mu}m$ wide specimens on the (100) plane. Young's modulus, Poisson's ratio and tensile strength in the <110> direction are measured by micro-tensile testing system.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.35-39
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• 2008

In this study, electromechanical properties of carbon nanotube (CNT) thin film on flexible substrates were measured using a micro-tensile machine with functionality of simultaneous measurements of displacement, load and electrical resistance. The CNT thin film of about 100 nm thick was deposited on flexible substrates, polyethylene terephthalate (PET) using spraying and ink-jetting techniques. To investigate the effect of process condition on the electromechanical properties of CNT thin film, sets of CNT samples were fabricated under various heat treatments and microwave process. The microstructures of the CNT thin film before and after tensile test were investigated using Scanning Electron Microscope (SEM), and the failure modes of the CNT thin films were identified to understand their electromechanical behaviors and interaction with the flexible substrates. Based on the experimental results, the use of CNT thin film as flexible electrodes and strain gages is discussed.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.58.1-58.1
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• 2010

We have developed a novel crystallization process, where the crystallization temperature is lowered compared to the conventional RTA process and the metal contamination is lowered compared to the conventional VIC process. A very-thin a-Si film was deposited and crystallized at $550^{\circ}C$ for 3 h by the VIC process and then a thick a-Si film was deposited and crystallized by the RTA process at $680^{\circ}C$ for 5 min using the VIC poly-Si layer as a crystallization seed layer. The RTA crystallized temperature could be lowered up to $50^{\circ}C$, compared to RTA process alone. The poly-Si film appeared a needle-like growth front and relatively well-arranged (111) orientation. In addition, the Ni concentration in the poly-Si film was lowered to $3{\times}10^{17}\;cm^{-3}$ and that at the poly-Si/$SiO_2$ interface was lowered to $5{\times}10^{19}\;cm^{-3}$. The reduction in metal contamination could be greatly helpful to achieve a low leakage current in poly-Si TFT, which is the critical parameter for commercialization of AMOLED.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e.g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current. 缀Ѐ㘰〻ሀ䝥湥牡氠瑥捨湯汯杹

• 한국전기전자재료학회논문지
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• 제18권6호
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• pp.532-537
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• 2005

In order to develop a tunable resonator which can be easily operated by DC bias and applied for microwave tunable filters and devices using ferroelectric thin or thick films, the non conductor backed-and conductor backed- coplanar stripline resonators have been designed and analyzed. They have been designed to be operated at 25 GHz which involve coplanar stripline input and output ports. The resonators have been simulated and analyzed using Ansoft HFSS. The research has been focused on the Quality factor of the coplanar stripline resonator. The conductor Q, box Q, and radiation Q of the resonators have been analyzed and calculated according to the substrate thickness & conductor width of the resonators. From these parameters, the loss factors of the coplanar stripline resonator have been investigated. The conducting Q of the coplanar stripline resonator has no relation with the thickness of dielectric substrate and increases as the conductor width increases. The box Q has no much relation with the thickness of substrate and the conductor width, which is above 2000. The radiation loss increases as the thickness of substrate and the conductor width increase. To decrease the radiation loss of the coplanar stripline resonator, a conductor backed coplanar stripline resonator has been proposed which has the unloaded Q of 170.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권11호
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• pp.555-561
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• 2001

In this paper, the low power (1.5 W) solenoid-type magnetic thin-film transformers utilizing a $Ni_{81}Fe_{19)$ core material were designed and fabricated for 5 MHz-drive DC-DC converter application. The $20\mum$ thick copper films were used as the coils. The transformers fabricated in this work have the sizes of $3.08 mm\times25.5 mm\; and\; 6.15 mm\times12.75 mm.$ The optimum design of solenoid-type magnetic thin film transformers was performed utilizing the conventional equations, a Maxwell computer simulator (Ansoft HFSS V7.0 for PC), and parameters obtained from the magnetic properties of NiFe magnetic core materials. frequency characteristics of inductance, dc resistance (R), coupling factor (k) and gain of developed transformers were measured using HP4194A impedance and gain-phase analyzer. The fabricated transformers with the size of $6.15 mm\time12.75 mm$ exhibit the inductance of $0.83 \muH$, the dc resistance of $2.3\Omega$$\Omega$, the k of 0.91 and the gain of -1 dB at 5 MHz, which show the comparable results to those reported in the recent literatures. The measured high-frequency characteristics for the fabricated transformers agreed well with those obtained by theoretical calculations .