• 한국세라믹학회지
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• 제36권9호
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• pp.893-900
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• 1999

Silica films were prepared on Si single crystal substrates by sol-gel process using TEOS as starting materials. Films were fabricated by a spin coating technique. Sol solutions were prepared by varying the compositions of CH3OH, H2O and DMF with fixed molar ratio of TEOS=1, HCl=0.05(mol). Wetting behavior viscosity of solutions gelation time thickness of films and cracking behavior were investigated with the various solution compositions. Wetting behaviors of solutions depended on the solution compositions mixing method and mixing rate. The optimum composition of sol was TEOS : DMF ; CH3OH: H2O :HCl=1:2:4:4:0.05(mol) and the mixing rate of solution was optimized at 1 ml/min. Viscosity of solutions were controlled by choosing a reaction time(elapsed time after mixing) at a room temperature so that we could get up to 800nm thick film The surface roughness was getting poor when thickness of films was thicker than 500nm. Thickness of coated films were increased with decreasing amount of CH3OH. The best surface roughness was obtained at the content of CH3OH 4 mol. The shortest gelation time was obtained with the content of CH3OH 8 mol. Crack-free filkms were fabricated when sintered at 500$^{\circ}C$ for 1 hr with heating rate of 0.6$^{\circ}C$/min.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.305-309
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• 2002

We have successfully fabricated a Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure using Bi$\sub$4-x/La$\sub$x/Ti$_3$O$\sub$12/ (BLT) ferroelectric thin film and SiO$_2$/Nitride/SiO$_2$ (ONO) stacked buffer layers for single transistor type ferroelectric nonvolatile memory applications. BLT films were deposited on 15 nm-thick ONO buffer layer by sol-gel spin-coating. The dielectric constant and the leakage current density of prepared ONO film were measured to be 5.6 and 1.0 x 10$\^$-8/ A/$\textrm{cm}^2$ at 2MV/cm, respectively, It was interesting to note that the crystallographic orientations of BLT thin films were strongly effected by pre-bake temperatures. X-ray diffraction patterns showed that (117) crystallites were mainly detected in the BLT film if pre-baked below 400$^{\circ}C$. Whereas, for the films pre-baked above 500$^{\circ}C$, the crystallites with preferred c-axis orientation were mainly detected. From the C-V measurement of the MFIS capacitor with c-axis oriented BLT films, the memory window of 0.6 V was obtained at a voltage sweep of ${\pm}$8 V, which evidently reflects the ferroelectric memory effect of a BLT/ONO/Si structure.

• 한국세라믹학회지
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• 제49권2호
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• pp.167-172
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• 2012

Fine diamond powders are synthesized with a 420 ${\phi}$ cubic press and stack-cell composed of Kovar ($Fe_{54}Ni_{29}Co_{17}$) (or Kovar+7 ${\mu}m$-thick Zn electroplated) alloy and graphite disks. The high pressure high temperature (HPHT) process condition was executed at $1500^{\circ}C$ for 280 seconds by varying the nominal pressure of 5.7~10.6 GPa. The density of formation, size, shape, and phase of diamonds are determined by optical microscopy, field emission scanning electron microscopy, thermal gravimetric analysis-differential thermal ammnlysis (TGA-DTA), X-ray diffraction (XRD), and micro-Raman spectroscopy. Through the microscopy analyses, we found that 1.5 ${\mu}m$ super-fine tetrahedral diamonds were synthesized for Zn coated Kovar cell with whole range of pressure while ~3 ${\mu}m$ super-fine diamond for conventional Kovar cell with < 10.6 GPa. Based on $750^{\circ}C$ exothermic reaction of diamonds in TGA-DTA, and characteristic peaks of the diamonds in XRD and micro-Raman analysis, we could confirm that the diamonds were successfully formed with the whole pressure range in this research. Finally, we propose a new process for super-fine diamonds by lowering the pressure condition and employing Zn electroplated Kovar disks.

• Journal of Mechanical Science and Technology
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• 제18권10호
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• pp.1772-1781
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• 2004

The mechanical as well as tribological characteristics of coating films as thin as a few nm become more crucial as applications in micro-systems grow. Especially, the amorphous carbon film has a potential to be used as a protective layer for micro-systems. In this work, quantitative evaluation of nano-indentation, scratching, and wear tests were performed on the 7nm thick amorphous carbon film using an Atomic Force Microscope (AFM). It was shown that AFM-based nano-indentation using a diamond coated tip can be feasibly utilized for mechanical characterization of ultra-thin films. Also, it was found that the critical load where the failure of the carbon film occurred was about 18${\mu}$N by the ramp load scratch test. Finally, the wear experimental results showed that the quantitative wear rate of the carbon film ranged 10$\^$-9/～10$\^$-8/ ㎣ /N cycle. These experimental methods can be effectively utilized for a better understanding the mechanical and tribological characteristics at the nano-scale.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.185-190
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• 2003

In this paper, it was demonstrated that the organic thin film transistors were fabricated by the organic gate insulators with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) and ODA, and cured at $150^{\circ}C$ for 1hr. Electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure obtained to the saturated slop in the saturation region and the subthreshold non-linearity in the triode region. Field effect mobility, threshold voltage, and on-off current ratio in $0.45\;{\mu}m$ thick gate dielectric layer were about $0.17\;cm^2/Vs$, -7 V, and $10^6\;A/A$, respectively. Details on the explanation of compared to organic thin-film transistors (OTFTS) electrical characteristics of ODPA-ODA and 6FDA-ODA as gate insulators by fabricated thermal co-deposition method.

• 한국레이저가공학회지
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• 제14권1호
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• pp.19-24
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• 2011

This work reports the results for laser shock peening of duplex stainless steel (22% Chromium - 5% Nickel) using a pulsed Nd:YAG laser (wavelength = 532nm, pulse width = 8ns). for the application to high-capacity pumps for seawater desalination plants. By properly selecting the process parameters such as laser intensity of 10GW/$cm^2$, laser pulse density of 75pulse/$mm^2$, and $100{\mu}m$ thick aluminum foil as an absorbent coating layer, the surface hardness of duplex stainless steel could be enhanced by 26%, from 256HV to 323HV with little changes in surface morphology and roughness. The depth of laser shock peened layer was measured to be around 2mm. The large enhancement of surface hardness is considered to have high practical importance in minimizing abrasive and corrosive deterioration of pump parts.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.47-50
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• 2002

ZnO nanowires were coated conformally with aluminum oxide ($Al_{2}O_{3}$) material by atomic layer deposition (ALD). The ZnO nanowires were first synthesized on a Si (100) substrate at $1380^{\circ}C$ from ball-milled ZnO powders by a thermal evaporation procedure with an argon carrier gas without any catalysts; the length and diameter of these ZnO nanowires are $20\sim30{\mu}m$ and $50{\sim}200$ nm, respectively. $Al_{2}O_{3}$ films were then deposited on these ZnO nanowires by ALD at a substrate temperature of $300^{\circ}C$ using trimethylaluminum (TMA) and distilled water ($H_{2}O$). Transmission electron microscopy (TEM) images of the deposited ZnO nanowires revealed that 40nm-thick $Al_{2}O_{3}$ cylindrical shells surround the ZnO nanowires.

• 한국분말재료학회지
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• 제17권3호
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• pp.230-234
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• 2010

Homogenous silica-coated $CoFe_2O_4$ samples with controlled silica thickness were synthesized by the reverse microemulsion method. First, 7 nm size cobalt ferrite nanoparticles were prepared by thermal decomposition methods. Hydrophobic cobalt ferrites were coated with controlled $SiO_2$ using polyoxyethylene(5)nonylphenylether (Igepal) as a surfactant, $NH_4OH$ and tetraethyl orthosilicate (TEOS). The well controlled thickness of the silica shell was found to depend on the reaction time and the amount of surfactant used during production. Thick shell was prepared by increasing reaction time and small amount of surfactant.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.756-759
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• 2007

We have fabricated pentacene OTFT on ultra-thin flexible polyimide film with a rigid glass support. Polyimide film of the thickness of $10{\mu}m$ has formed on glass by spin coating from the solution. After the entire OTFT process, the OTFT exhibited a fieldeffect mobility of $0.4\;cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $10^7$ and a subthreshold swing of 0.7 V/dec. The OTFT on polyimide film has been detached from the glass support and laminated on a plastic support of $130\;{\mu}m-thick$ PET film. After the detach process, in spite of the degrading of its field-effect mobility, the OTFT showed high $I_{on}/I_{off}$ as high $as{\sim}10^6$.

• Bulletin of the Korean Chemical Society
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• 제31권12호
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• pp.3723-3729
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• 2010

We investigated the high-excitation voltage cathodoluminescence (CL) performance of blue light-emitting (ZnS:Ag,Al,Cl) and green light-emitting (ZnS:Cu,Al) phosphors coated with metal oxides ($SiO_2$, $Al_2O_3$, and MgO). Hydrolysis of the metal oxide precursors tetraethoxysilane, aluminum isopropoxide, and magnesium nitrate, with subsequent heat annealing at $400^{\circ}C$, produced $SiO_2$ nanoparticles, an $Al_2O_3$ thin film, and MgO scale-type film, respectively, on the surface of the phosphors. Effects of the phosphor surface coatings on CL intensities and aging behavior of the phosphors were assessed using an accelerating voltage of 12 kV. The MgO thick film coverage exhibited less reduction in initial CL intensity and was most effective in improving aging degradation. Phosphors treated with a low concentration of magnesium nitrate maintained their initial CL intensities without aging degradation for 2000 s. In contrast, the $SiO_2$ and the $Al_2O_3$ coverages were ineffective in improving aging degradation.