• Title/Summary/Keyword: thermometer

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THE MEASUREMENT OF EXOTHERMIC TEMPERATURE OF VARIOUS DENTAL CEMENTS (각종 치과용 세멘트의 경화열 측정)

  • Pahk, Deok-Sang
    • The Journal of the Korean dental association
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    • v.10 no.8
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    • pp.531-534
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    • 1972
  • The author measured exothermic temperature of the 5 kinds of zinc phosphate cement and 3 kinds of copper phosphate cement during setting process. Cements were mixed on the glass slab with flexible steel spatula at room temperature (25.8℃) for one minute (spatulating speed was 100 strokes per minute) and placed in the incubator of which temperature was held at 37℃ and thermometer was inserted into the cement mass. The powder liquid ration was 3.0gm:1ml and 1.5gm:1ml. The results were as follows. 1) The heat generated after mixing these cements was under 47.22℃. 2) The range of thermal change of the zinc phosphate cements during setting process was wider than copper phosphate cements. 3) The exothermic temperature from the thin mix was higher than thick mix. 4) The exothermic temperature of the zinc phosphate cements was higher than copper phosphate cements.

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The study on formation of platinum thin films for RTD temperature sensor (측온저항체 온도센서용 백금박막의 형성에 관한 연구)

  • 정귀상;노상수
    • Electrical & Electronic Materials
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    • v.9 no.9
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    • pp.911-917
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    • 1996
  • Platinum thin films were deposited on Si-wafer by DC rnagnetron sputtering for RTD (resistance thermometer devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity and sheet resistivity were decreased with increasing the temperature of substrate and the annealing time at 1000.deg. C. At substrate temperature of >$300^{\circ}C$, input power of 7 w/cm$^{2}$, working vacuum of 5 mtorr and annealing conditions of 1000.deg. C and 240 min, we obtained 10.65.mu..ohm..cm, resistivity of Pt thin films and 3800-3900 ppm/.deg. C, TCR(temperature coefficient of resistance). These values are close to the bulk value. These results indicate that the Pt thin films deposited by DC magnetron sputtering have potentiality for the development of Pt RTD temperature sensor.

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Characteristics of Hot-Film Type Micro-Flowsensors Fabricated on SOI Membrane and Trench Structures (SOI 멤브레인과 트랜치 구조상에 제작된 발열저항체형 마이크로 유량세선의 특성)

  • 정귀상;김미목;남태철
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.8
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    • pp.658-662
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    • 2001
  • This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD(resistance thermometer device) and micro-heater on the SOI(Si-on-insulator) membrane and trench structures, in which MGO thin-film was used as medium layer in order to improve adhesion of Pt thin-film to SiO$_2$ layer. Output voltages increased due to increase of heat-loss from sensor to external. The output voltage was 250 nV at N$_2$ flow rate of 2000 sccm/min, heating power of 0.3 W. The response time($\tau$:63%) was about 42 msec when input flow was step-input. The results indicated that micro-flowsensors with the SOI membrane and trench structures have properties of a high-resolution and ow consume power.

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The Development of Platinum Thin Film RTD Temperature Sensors (백금박막 측온저항체 온도센서의 개발)

  • 노상수;최영규;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.152-155
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    • 1996
  • Platinum thin films were deposited on $Al_2$O$_3$substrate by DC magnetron sputtering for RTD(Resistance Thermometer Devices) temperature sensors. We made Pt resistance pattern on $Al_2$O$_3$substrate by lift-off method and fabricated Pt-RTD temperature sensors by using W-wire, silver epoxy and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$, we investigated TCR(temperature coefficient of resistance) and resistance ratio of Pt-RTD temperature sensors. TCR values were increased with increasing the annealing temperature, time and the thickness of Pt thin films. Resistance values were varied lineally within the range of measurement temperature. At annealing temperature of 100$0^{\circ}C$, annealing time of 240min and thin film thickness of 1${\mu}{\textrm}{m}$, we obtained Pt-RDT TCR value of 3825ppm/$^{\circ}C$ closed to the Pt bulk value.

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A Study on the Combustion Characteristics and Radiation Efficiency of Metal Fiber Burners (메탈 화이버 버너에서의 연소 특성 및 복사 효율에 관한 실험적 연구)

  • Park, Ju-Won;Chung, Tae-Yong;Shin, Dong-Hoon
    • Journal of the Korean Society of Combustion
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    • v.11 no.1
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    • pp.27-33
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    • 2006
  • Radiant burners are applicable to drying, preheating and curing in materials manufacturing processes. Radiation efficiency is one of the important performance criteria for these burners. The wide variation in reported radiation efficiencies are partly due to the differences in the measurement techniques. In the present work, water cooled radiant heat flux meter was used to measure radiant heat flux from a metal fiber mat burner. Non-contact type thermometer was also utilized to measure the surface temperature of the burner. Combustion gas was measured by gas analyzers. According to the thermal loads and stoichiometric ratios, radiant heat transfer ratio and combustion performance were discussed here in.

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Comparison of Junction Temperature for Top-Emitting Organic Light-Emitting Diodes Fabricated on Different Substrates

  • Juang, Fuh-Shyang;Tsai, Yu-Sheng;Wang, Shun-Hsi;Chen, Chuan-Hung;Cheng, Chien-Lung;Liao, Teh-Chao;Chen, Guan-Wen
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1148-1151
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    • 2009
  • A self-designed, written in labview, Organic Light-Emitting Diode junction temperature measuring program was used to calculate the internal junction temperature for devices during operation, and an infrared thermometer was used to measure the backside temperature of the device substrate, to discuss the effects of the junction and substrate temperature difference to the characteristics of the device.

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Analysis of Optical and Electromagnetic Distribution of Ring-shaped Electrodeless Fluorescent Lamps (환형 무전극 램프의 광학적, 전자계적 해석)

  • 조주웅;최용성;김용갑;박대희
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.4
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    • pp.460-464
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    • 2004
  • In recent, there have been several developments in lamp technology that promise savings in electrical power consumption and improved quality of the lighting space. Above all, the advantage of ring-shaped electrodeless fluorescent lamp is the removal of internal electrodes and heating filaments that are a light-limiting factor of conventional fluorescent lamps. Therefore, the life time of ring-shaped electrodeless fluorescent lamps is substantially higher than that of conventional fluorescent lamps and last up to 60,000 hours and is intended as a high efficacy replacement for the incandescent reflector lamp in many applications. In this paper, maxwell 3D finite element analysis program (Ansoft) was used to obtain electromagnetic properties associated with the coil and nearby structures. The electromagnetic emitting properties were presented by D simulation software operated at 250KHz and some specific conditions. Photometric characteristic of the ring-shaped electrodeless fluorescent lamp were investigated using LS-100 lightmeter and TA-0510 thermometer respectively.

The Design of CMOS AD Converter for High Speed Embedded System Application (고속 임베디드 시스템 응용을 위한 CMOS AD 변환기 설계)

  • Kwon, Seung-Tag
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.33 no.5C
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    • pp.378-385
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    • 2008
  • This paper has been designed with CMOS Analog-to-Digital Converter(ADC) to use a high speed embedded system. It used flash ADC with a voltage estimator and comparator for background developed autozeroing. The speed of this architecture is almost similar to conventional flash ADC but the die size are lower due to reduced numbers of comparators and associated circuity. This ADC is implemented in a $0.25{\mu}m$ pure digital CMOS technology.

논문 - 직업성 수은중독 진단1례

  • Park, Jeong-Il;Jeong, Chi-Gyeong;Lee, Gwang-Muk;Lee, Seung-Han
    • 월간산업보건
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    • s.11
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    • pp.7-12
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    • 1989
  • A case of Occupational Mercury Poisoning Chung Yill Park, Chee Kyung Chung, Kwang Mook Lee and Seung Han Lee Catholic Industrial Medical Center,Catholic University Medical College, Seoul, Korea. The diagnosis of occupational mercury poisoning will depend on the exposure history, clininal symptoms and sings, laboratory findings and other informations such as laboratory results of other workers who have been worked under the same working condition. We diagnosed a 15 year-old male patient, who had been worked for 12 days at mercuny thermometer workshop, as occupational mercury poisoning by putting the above mentioned diagnostic bases together and reported here with brief rewiew of literature.

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Trap Level Study of Alq3 for OLED with Debye Dielectric Relaxation (Debye 이론을 이용한 유기 EL용 Alq3계 재료의 Trap Level 측정)

  • Jeong, Yong-Seok;Jeong, Yeon-Tae;Kim, Jong-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.6
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    • pp.668-672
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    • 2004
  • Upon Debye's dielectric relaxation theory, we tried simple determination method of trap level in organic EL materials. From dielectric measurements in the 20 Hz - 1 MHz frequency range and in the 150 K - 320K temperature range, the depth of traps in Alq$_3$ filled with remaining electrons was determinated. Comparing to other determination techniques like TSL, or TL, the apparatus all we need is just simple LCR meter, thermometer and cooling method(liquid nitrogen). The mean activation energy is about 0.20 eV. It is in good agreement with previous determinations by other techniques like TSL. This results consolidate the validity of Burrow's transport mechanism model. Further intensified experiment with UV light on the dielectric absorption(Photodipolair effect) was nevertheless disturbed by the photoconductivity component.