• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1552-1554
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• 1998

TEC(Thermoelectric conversion) is direct conversion method between thermal energy and electric energy. We studied on the mechanical, electrical and thermal properties of thermoelectric module, made experimental thermoelectric generator with BiTe material and manufactured module tester for electric-thermal energy conversion.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.113.2-113.2
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• 2014

Heat is a familiar form of energy transported from a hot side to a colder side of an object, but not a notion associated with microscopic measurements of electronic properties. A temperature difference within a material causes charge carriers, electrons or holes, to diffuse along the temperature gradient inducing a thermoelectric voltage. Here we show that local thermoelectric measurements can yield high sensitivity imaging of structural disorder on the atomic and nanometre scales. Using this imaging technique, we discovered a defect-mediated dimensional evolution of strain-response patterns in epitaxial graphene with increasing thickness.

• Applied Microscopy
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• 제47권3호
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• pp.105-109
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• 2017

The effect of temperature and vanadium metal concentration on the electronic and thermoelectric properties of Si in the diamond cubic structure has been investigated using a combination of density functional theory simulations and the semi classical Boltzmann's theory. The BotzTrap code within the constant relaxation time approximation has been used to obtain the Seebeck coefficient and other transport properties of interest for alloys of the structure $Si_{1-x}V_x$, where x is 0, 0.125, 0.25, 0.375, and 0.5. The thermoelectric properties have been extracted for a temperature range of 300 K to 1,000 K. The general trend with V atom substitution for Si causes the Seeback coefficient to increase and the thermal conductivity to decrease for the various alloys. The optimum values are for $Si_5V_3$ and $Si_4V_4$ alloys for charge carrier concentrations of $10^{21}cm^{-3}$ in the mid temperature range of 500~800 K. This is a very desirable effect for a promising thermoelectric and the figure of merit ZT approaches 0.2 at 600 K for the p-type $Si_5V_3$ alloy.

• 한국재료학회지
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• 제15권7호
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• pp.473-479
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• 2005

Thermoelectric $Zn_4Sb_3$ alloys were synthesized by a conventional powder metallurgy process consisting of solid state reaction and hot pressing. Single phase $Zn_4Sb_3$ was successfully produced by the annealing of cold compact starting with the mixed elemental powders, and subsequent hot pressing yielded single phase bulk specimens without microcracks. Phase transformations in this alloy system during synthesis were investigated using XRD, SEM and EDS. Thermoelectric properties as a function of temperature were investigated from room temperature to 600 K and compared with results of analogue studies. Transport properties at room temperature were also evaluated. Thermoelectric properties of single phase $Zn_4Sb_3$ materials produced by this process are comparable to the published data. Synthesis by solid state reaction and hot pressing offers a potential processing route to produce a bulk $Zn_4Sb_3$.ٓ

• 한국재료학회지
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• 제14권8호
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• pp.535-541
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• 2004

Thermoelectric $Zn_{4}Sb_3$ alloy powders were synthesized from elemental powders by mechanical alloying process and consolidated by hot pressing under controlled atmosphere. Single phase $Zn_{4}Sb_3$ was not obtained using a nominal stoichiometric composition, but near single phase $Zn_{4}Sb_3$ with remnant elemental Zn having a relatively high density was produced using a nominally 11.7 $at.\%$ Zn rich powders. Phase transformations during mechanical alloying were systematically investigated using XRD and SEM. Thermoelectric and transport properties were evaluated for the hot pressed specimens and compared with results of analogous studies.

• Coupled systems mechanics
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• 제9권4호
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• pp.325-342
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• 2020

A mathematical model of electro-thermoelasticity subjected to memory-dependent derivative (MDD) heat conduction law is applied to a one-dimensional problem of a thermoelectric spherical cavity exposed to a warm stun that is an element of time in the presence of a uniform magnetic field. Utilizing Laplace transform as an instrument, the issue has been fathomed logically within the changed space. Numerical inversion of the Laplace transform is carried for the considered distributions and represented graphically. Some comparisons are shown in the figures to estimate the effects of MDD parameters and thermoelectric properties on the behavior of all considered fields.

• 한국세라믹학회지
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• 제47권1호
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• pp.47-53
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• 2010

Ceramics with perovskite-type structure are interesting functional materials for several energy conversion processes due to their flexible structure and a variety of properties. Prominent examples are electrode materials in fuel cells and batteries, thermoelectric converters, piezoelectrics, and photocatalysts. The very attractive physical-chemical properties of perovskite-type phases can be modified in a controlled way by changing the composition and crystallographic structure in tailor-made soft chemistry synthesis processes. Improved thermoelectric materials such as cobaltates with p-type conductivity and n-type manganates are developed by following theoretical predictions and tested to be applied in oxidic thermoelectric converters.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.21-24
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• 2000

Properties of thermoelectric power in PbS thin films by chemical bath deposition were investigated The qualified PbS thin film was gained with the amounts of Thiourea($4-8ml/{\ell}$ ), Triethanolamine (1-2ml) and NaOH(l0ml). The molecular ratio of Pb and S was 3 : 7. Satisfied crystallization rate and deposition rate of PbS were greater at $50^{\circ}C$ than at $30^{\circ}C$. The constant of thermoelectric power in PbS was nearly $ 500uv/^{\circ}k$. The PbS thin film was changed from p-type to n-type semiconductor at around $200^{\circ}C$. In case of heat treatment at $300^{\circ}C$, the sample kept the characteristic of p-type semiconductors up to $250^{\circ}C$.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1198-1199
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• 2006

Type I clathrate $Ba_8Al_{16}Si_{30}$ was produced by arc melting and hot pressing and thermoelectric properties were investigated. Negative Seebeck coefficient at all temperatures measured, which means that the majority carriers are electrons. Electrical conductivity decreased by increasing temperature and thermal conductivity was 0.012 W/cmK at room temperature and dimensionless thermoelectric figure of merit (ZT) was 0.01 at 873K.

• 한국분말재료학회지
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• 제22권4호
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• pp.254-259
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• 2015

$Bi_2Te_3$ related compounds show the best thermoelectric properties at room temperature. However, n-type $Bi_2Te_{2.7}Se_{0.3}$ showed no improvement on ZT values. To improve the thermolectric propterties of n-type $Bi_2Te_{2.7}Se_{0.3}$, this research has Cu-doped n-type powder. This study focused on effects of Cu-doping method on the thermoelectric properties of n-type materials, and evaluated the comparison between the Cu chemical and mechanical doping. The synthesized powder was manufactured by the spark plasma sintering(SPS). The thermoelectric properties of the sintered body were evaluated by measuring their Seebeck coefficient, electrical resistivity, thermal conductivity, and hall coefficient. An introduction of a small amount of Cu reduced the thermal conductivity and improved the electrical properties with Seebeck coefficient. The authors provided the optimal concentration of $Cu_{0.1}Bi_{1.99}Se_{0.3}Te_{2.7}$. A figure of merit (ZT) value of 1.22 was obtained for $Cu_{0.1}Bi_{1.9}Se_{0.3}Te_{2.7}$ at 373K by Cu chemical doping, which was obviously higher than those of $Cu_{0.1}Bi_{1.9}Se_{0.3}Te_{2.7}$ at 373K by Cu mechanical doping (ZT=0.56) and Cu-free $Bi_2Se_{0.3}Te_{2.7}$ (ZT=0.51).