• Elastomers and Composites
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• v.56 no.4
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• pp.250-253
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• 2021

Polypyrrole is an organic thermoelectric material which has been receiving extensive attention in recent years. Polypyrrole is applicable in various fields because its electrical properties are controllable by its doping concentration. In this study, the effects of the polypyrrole doping state on its photoresponse were investigated. The degree of doping was controlled by ammonia solution treatment. Then, the chemical structure as a function of the doping states was observed by Raman analysis. Moreover, the photocurrent and photovoltage characteristics for various doping states were measured by an asymmetrically irradiated light source. As the degree of doping increased, the electrical conductivity increased, which affected the photocurrent. Meanwhile, the photovoltage was related to the temperature gradient caused by light irradiation.

• Journal of Mechanical Science and Technology
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• v.17 no.12
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• pp.2099-2106
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• 2003

In this paper, a novel fast response NDIR analyzer (FRNDIR), which uses an electrically pulsed semiconductor emitter and dual type PbSe detector for the PPM-level detection of carbon dioxide (CO$_2$) at a wavelength of 4.28 $\mu\textrm{m}$, is described. Modulation of conventional NDIR energy typically occurs at 1 to 20 Hz. To achieve real time high-speed measurement, the new analyzer employs a semiconductor light emitter that can be modulated by electrical chopping. Updated measurements are obtained every one millisecond. The detector has two independent lead selenide (PbSe) with IR band pass filters. Both the emitter accuracy and the detector sensitivity are increased by thermoelectric cooling of up to -20 degrees C in all semiconductor devices. Here we report the use of semiconductor devices to achieve improved performance such that these devices have potential application to CO$_2$ gas measurement and, in particular, the measurement of fast response CO$_2$ concentration at millisecond level.

• Journal of the Korean institute of surface engineering
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• v.38 no.1
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• pp.7-13
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• 2005

Bismuth thin films were prepared on glass substrate with RF magnetron sputtering and effects of substrate temperature on surface morphology and their electrical transport properties were investigated. Grain growth of bismuth after nucleation and the onset of coalescense of grains at 393 K were observed with field emission secondary electron microscopy. Continuous thin films could not be obtained above 473 K because of grain segregation and island formation. Hall effect measurements showed that substrate heating yields the decrease of carrier density and the increase of mobility. Resistivity of bismuth film has its minimum (about 0.7 x 10/sup -3/ Ωcm) in range of 403～433 K. Annealing of bismuth films deposited at room temperature was carried out in a radiation furnace with flowing hydrogen gas. The change of resistivity was not significant due to cancellation of the decrease of carrier density and the increase of mobility. The abrupt change of electrical properties of film annealed above 523 K was found to be caused by partial oxidation of bismuth layer in x-ray diffraction analysis.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.44 no.5
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• pp.80-86
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• 2012

The disposal of the bottom ash originated from a thermoelectric power plant which used the pulverized coal, has been an important issue of the power plants. In order to find the possible way of recycling of the bottom ash, the applicability of the bottom ash as an inorganic filler for paper making was investigated in this study. The pretreatment with acid were applied for upgrading the properties of bottom ash. The effects of the addition of the bottom ash to the different pulp stocks, Sw-BKP, DIP(Deinked Pulp), Sw-UBKP were evaluated in terms of the change in paper properties. The brightness and tensile strength decreased as the increase of the amount of the bottom ash addition. The bulk and the opacity were increased by the addition of bottom ash. The pretreatment of bottom ash resulted in the increase of improvement of the brightness and the strength properties comparing with those of untreated bottom ash.

• Korean Journal of Materials Research
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• v.26 no.1
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• pp.35-41
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• 2016

The electrical transport properties of $La_{0.5}Sr_{0.5}CrO_3$ below room temperatures were investigated by dielectric, dc resistivity, magnetic properties and thermoelectric power. Below $T_c$, $La_{0.5}Sr_{0.5}CrO_3$ contains a dielectric relaxation process in the tangent loss and electric modulus. The $La_{0.5}Sr_{0.5}CrO_3$ involves the transition from high temperature thermal activated conduction process to low temperature one. The transition temperature corresponds well to the Curie point. The relaxation mechanism has been discussed in the frame of electric modulus spectra. The scaling behavior of the modulus suggests that the relaxation mechanism describes the same mechanism at various temperatures. The low temperature conduction and relaxation takes place in the ferromagnetic phase. The ferromagnetic state in $La_{0.5}Sr_{0.5}CrO_3$ indicates that the electron - magnon interaction occurs, and drives the carriers towards localization in tandem with the electron - lattice interaction even at temperature above the Curie temperature.

• Korean Journal of Materials Research
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• v.11 no.12
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• pp.1068-1073
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• 2001

An n-type iron$silicide(Fe_{0.98}Co_{0.02}Si_2)$has been produced by mechanical alloying process and consolidated by vacuum hot pressing. Although as-milled powders after 120 hours of milling did not show an alloying progress,${\beta}-FeSi_2$phase transformation was induced by isothermal annealing at$830{\circ}C$for 1 hour, and the fully transformed${\beta}-FeSi_2$phase was obtained after 4 hours of annealing. Near fully dense specimen was obtained after vacuum hot pressing at$ 1100{\circ}C$with a stress of 60MPa. However, as-consolidated iron silicides were consisted of untransformed mixture of ${\Alpha}-Fe_2Si_5$and ${\varepsilon-FeSi$phases. Thus, isothermal annealing has been carried out to induce the transformation to a thermoelectric semiconducting${\beta}-FeSi_2$phase. The condition for${\beta}-FeSi_2$transformation was investigated by utilizing DTA, SEM, and XRD analysis. The phase transformation was shown to be taken place by a vacuum isothermal annealing at$830{\circ}C$and the transformation behaviour was investigated as a function of annealing time. The mechanical properties of${\beta}-FeSi_2$materials before and after isothermal annealing were characterized in this study.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.11-18
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• 1996

The variation of electrical conductively and Seebeck coefficient of FeSi2 according to the density of the specimen has been observed over the temperature range 50 to $700^{\circ}C$. A conventional pressureless sintering method with various sintering time (0, 0.5, 1, 5h) at $1190^{\circ}C$ and/or various sintering temperatures(1160, 1175, 1190, $1200^{\circ}C$) for 2 h was carried out to prepare $FeSi_2$ specimens having various densities. The relationship between the electrical conductivity and Seebeck coefficient was investigated after two steps of annealing (at $865^{\circ}C$ and then $800^{\circ}C$ for total 160h) and thermoelectric measurement. The electrical conductivity for the specimens showed a typical tendency of semiconductor, the average activation energy of which in the intrinsic region (above $300^{\circ}C$) was observed approximately as 0.452 eV, and increased slightly with density. On the other hand, the specimen of the lower density showed the higher value of Seebeck coefficient in the intrinsic region. As the temperature fell into the non-degenerate region, the highly densified specimen which had relatively little residual metal phase showed the higher value of Seeback coefficient. The power factor of all specimens showed the optimum value at $200^{\circ}C$. However, the power factor of the specimen of the lower density increased again from $400^{\circ}C$ and that of the higher dense specimen increased from $500^{\circ}C$. The power factor was more affected by Seebeck coefficient than electrical conductivity over all temperature range.

• Journal of the Korean Ceramic Society
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• v.47 no.1
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• pp.54-60
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• 2010

This paper shortly reviews our recent work on filled skutterudites, which are considered to be one of the most promising thermoelectric (TE) materials due to their excellent power factors and relatively low thermal conductivities. The filled skutterudite system also provides a platform for studying void filling physics/chemistry in compounds with intrinsic lattice voids. By using ab initio calculations and thermodynamic analysis, our group has made progresses in understanding the filling fraction limit (FFL) for single fillers in $CoSb_3$, and ultra-high FFLs in a few alkali-metal-filled $CoSb_3$ have been predicted and then been confirmed experimentally. FFLs in multiple-element-filled $CoSb_3$ are also investigated and anonymous filling behavior is found in a few specific systems. The calculated and measured FFLs, in both single and multiple-filled $CoSb_3$ systems, show good accordance so far. The thermal transport properties can be understood qualitatively by a phonon resonance scattering model, and it seems that a scaling rule may exist between the lattice thermal resistivity and the resonance frequency of filler atoms in filled system. Even though a few things become clear now, there are still many unsolved issues that call for further work.

• Composites Research
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• v.29 no.4
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• pp.156-160
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• 2016

Glassy carbon can be utilized in a variety of harsh environment due to exceptional thermal stability and chemically impermeability along with scalability and low electrical resistance. In this work, we studied effects of electron(e)-beam irradiation on thermoelectric properties of the glassy carbon film. E-beam irradiation triggered local crystallization and/or amorphization of glassy carbon thin films, which was determined by a Raman spectroscopy. The structural change by e-beam irradiation leads to the change in the doping level of the glassy carbon, which can be inferred from the change of a Seebeck coefficient and an electric conductivity. The optimal power factor we obtained for the irradiated glassy carbon film was ~200% higher than that of the non-irradiated sample.

• Korean Journal of Materials Research
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• v.25 no.2
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• pp.68-74
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• 2015

The porous $Mg_3Sb_2$ based compounds with 60~70% of relative density were prepared by powder compaction at room temperature and reactive liquid phase sintering at 1023 K for 4hrs. The stoichiometric $Mg_3Sb_2$ compounds were synthesized from elemental Sb and Mg powder in the mixing range of 61~63 at% Mg. The increased scattering effect due to the micro-pores reduced the mobility of the charge carrier and the phonon, which caused the electrical conductivity and the thermal conductivity to decrease, respectively. But the scattering effect was greater for the electrical conductivity than for the thermal conductivity. Excess Mg alloyed in the $Mg_3Sb_2$ compounds decreased the electrical conductivity, but had no effect on the thermal conductivity. On the other hand, the large increase of the Seebeck coefficient was the result of a decrease in the charge carrier density due to the excess Mg. Dimensionless figure of merit of the porous $Mg_3Sb_2$ compound reached a maximum value of 0.28 at 61 at% Mg. The obtained value was similar to that of $Mg_3Sb_2$ compounds having little pores.