• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.49-54
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• 2010

The n-type $Bi_2(Te,Se)_3$ powders were fabricated by melting/grinding method and were hot-pressed in order to compare thermoelectric properties of the hot-pressed specimens with those of the $Bi_2(Te,Se)_3$ ingot. Effects of mechanical milling treatment of the $Bi_2(Te,Se)_3$ powders on thermoelectric characteristics of a hot-pressed specimen were also examined. The hot-pressed $Bi_2(Te,Se)_3$ exhibited power factors of $27.3{\sim}32.3{\times}10^{-4}W/m-K^2$ which were superior to $24.2{\times}10^{-4}W/m-K^2$ of the ingot. The $Bi_2(Te,Se)_3$, hot-pressed after mechanical milling treatment of the powders, possessed a non-dimensional figure-of-merit of 1.02 at $100^{\circ}C$ and exhibited extrinsic-intrinsic transition at $130^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.852-856
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• 2015

In this study, we investigate the effect of high-energy ball milling on thermoelectric transport properties in double-filled $CoSb_3$ skutterudite ($In_{0.2}Yb_{0.1}Co_4Sb_{12}$). $In_{0.2}Yb_{0.1}Co_4Sb_{12}$ powders are milled using high-energy ball milling for different periods of time (0, 5, 10, and 20 min), and the milled powders are consolidated into bulk samples by spark plasma sintering. Microstructure analysis shows that the high-energy ball milled bulk samples are composed of nano- and micro-grains. Because the filling fractions are reduced in the bulk samples due to the kinetic energy of the high-energy ball milling, the carrier concentration of the bulk samples decreases with the ball milling time. Furthermore, the mobility of the bulk samples also decreases with the ball milling time due to enhanced grain boundary scattering of electrons. Reduction of electrical conductivity by ball milling has a decisive effect on thermoelectric transport in the bulk samples, power factor decreases with the ball milling time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.340-344
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• 2011

Thermoelectric bismuth telluride ($Bi_2Te_3$) films were deposited on $4^{\circ}$ off oriented (001) GaAs substrates using a modified metal organic chemical vapor deposition (MOCVD) system. The effects of substrate temperature on surface morphologies, crystallinity, electrical properties and thermoelctric properties were investigated. Two dimensional growth mode (2D) was observed at substrate temperature lower than $400^{\circ}C$. However, three dimensional growth mode (3D) was observed at substrate temperature higher than $400^{\circ}C$. Change of growth mechanism from 2D to 3D was confirmed with environmental scanning electron microscope (E-SEM) and X-ray diffraction analysis. Seebeck coefficients of all samples have negative values. This result indicates that $Bi_2Te_3$ films grown by modified MOCVD are n-type. The maximum value of Seebeck coefficient was -225 ${\mu}V/K$ and the power factor was $1.86{\times}10^{-3}\;W/mK^2$ at the substrate temperature of $400^{\circ}C$. $Bi_2Te_3$ films deposited using modified MOCVD can be used to fabricate high-performance thermoelectric devices.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.647-651
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• 2006

A new class of compounds in the form of skutterudite structure, Fe doped $CoSb_3$ with a nominal composition of $Fe_xCo_{4-x}Sb_{12}$ ($0{\leq}x{\leq}2.5$), were synthesized by mechanical alloying of elemental powders followed by vacuum hot pressing. Nanostructured, single-phase skutterudites were successfully produced by vacuum hot pressing using as-milled powders without subsequent heat-treatments for the compositions of $x{\leq}1.5$. However, second phase was found to form in case of $x{\geq}2$, suggesting the solubility limit of Fe with Co in this system. Thermoelectric properties including thermal conductivity from 300 to 600 K were measured and discussed. Lattice thermal conductivity was greatly reduced by introducing a dopant up to x=1.5 as well as by increasing phonon scattering in nanostructured skutterudite, leading to enhancement in the thermoelectric figure of merit. The maximum figure of merit was found to be 0.32 at 600 K in the composition of $Fe_xCo_{4-x}Sb_{12}$.

• Journal of Powder Materials
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• v.31 no.2
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• pp.119-125
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• 2024

The n-type Bi_2-xSb_xTe₃ compounds have been of great interest due to its potential to achieve a high thermoelectric performance, comparable to that of p-type Bi_2-xSb_xTe₃. However, a comprehensive understanding on the thermoelectric properties remains lacking. Here, we investigate the thermoelectric transport properties and band characteristics of n-type Bi_2-xSb_xTe₃ (x = 0.1 - 1.1) based on experimental and theoretical considerations. We find that the higher power factor at lower Sb content results from the optimized balance between the density of state effective mass and nondegenerate mobility. Additionally, a higher carrier concentration at lower x suppresses bipolar conduction, thereby reducing thermal conductivity at elevated temperatures. Consequently, the highest zT of ~ 0.5 is observed at 450 K for x = 0.1 and, according to the single parabolic band model, it could be further improved by ~70 % through carrier concentration tuning.

• Journal of Powder Materials
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• v.31 no.1
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• pp.50-56
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• 2024

We report the effect of plastic deformation on the thermoelectric properties of n-type Bi₂Te_2.5Se_0.5 compounds. N-type Bi₂Te_2.5Se_0.5 powders are synthesized by an oxide-reduction process and consolidated via spark-plasma sintering. To explore the effect of plastic deformation on the thermoelectric properties, the sintered bodies are subjected to uniaxial pressure to induce a controlled amount of compressive strains (-0.2, -0.3, and -0.4). The shaping temperature is set using a thermochemical analyzer, and the plastic deformation effect is assessed without altering the material composition through differential scanning calorimetry. This strategy is crucial because the conventional hot-forging process can often lead to alterations in material composition due to the high volatility of chalcogen elements. With increasing compressive strain, the (00l) planes become aligned in the direction perpendicular to the pressure axis. Furthermore, an increase in the carrier concentration is observed upon compressive plastic deformation, i.e., the donor-like effect of the plastic deformation in n-type Bi₂Te_2.5Se_0.5 compounds. Owing to the increased electrical conductivity through the preferred orientation and the donor-like effect, an improved ZT is achieved in n-type Bi₂Te_2.5Se_0.5 through the compressive-forming process.

• Proceedings of the Korean Magnestics Society Conference
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• 2016.05a
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• pp.133-133
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• 2016

• Journal of the Microelectronics and Packaging Society
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• v.14 no.2 s.43
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• pp.9-15
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• 2007

Thermoelectric properties of the electrodeposited Bi-Te films and photoresist process have been investigated to apply for thermoelectric thin film devices. After plating in Bi-Te solutions of 20 mM concentration, which were prepared by dissolving $Bi_2O_3$ and $TeO_2$ into 1M $HNO_3$, thermoelectric properties of the films were characterized with variation of the Te/(Bi+Te) ratio in a plating solution. With increasing the Te/(Bi+Te) ratio in the plating solution from 0.5 to 0.65, Seebeck coefficient of Bi-Te films changed from $-59{\mu}V/K$ to $-48{\mu}V/K$ and electrical resistivity was lowered from $1m{\Omega}-cm$ to $0.8m{\Omega}-cm$ due to the increase in the electron concentration. Maximum power factor of $3.5{\times}10^{-4}W/K^2-m$ was obtained for the Bi-Te film with the $Bi_2Te_3$ stoichiometric composition. Using multilayer overhang process, the photoresist pattern to form thermoelectric legs of 30 m depth and 100m diameter was successfully fabricated fur micro thermoelectric device applications.

• Proceedings of the Korean Magnestics Society Conference
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• 2014.11a
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• pp.154-154
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• 2014

• Proceedings of the Korea Crystallographic Association Conference
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• 2000.05a
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• pp.29-29
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• 2000