• E2M - 전기 전자와 첨단 소재
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• 제9권1호
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• pp.67-75
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• 1996

This paper has presented the characteristics of thermoelectric devices and the plots of thermoelectric cooling and heating as a function of currents for different temperatures. The maximum cooling and heating(.DELTA.T) for (BiSb)$\_$2/Te$\_$3/ and Bi$\_$2/(TeSe)$\_$3/ as a function of currents is about 75.deg. C, A solderable ceramic insulated thermoelectric module. Each module contains 31 thermoelectric devices. Thermoelectric material is a quaternary alloy of bismuth, tellurium, selenium, and antimony with small amounts of suitable dopants, carefully processed to produce an oriented polycrystalline ingot with superior anisotropic thermoelectric properties. Metallized ceramic plates afford maximum electrical insulation and thermal conduction. Operating temperature range is from -156.deg. C to +104.deg. C. The amount of Peltier cooling is directly proportional to the current through the sample, and the temperature gradient at the thermoelectric materials junctions will depend on the system geometry.

• Nuclear Engineering and Technology
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• 제55권8호
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• pp.3080-3087
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• 2023

Thermoelectric (TE) materials working in radioisotope thermoelectric generators are irradiated by neutrons throughout its service; thus, investigating the neutron irradiation stability of TE devices is necessary. Herein, the influence of neutron irradiation with fluences of 4.56 × 10¹⁰ and 1 × 10¹³ n/cm² by pulsed neutron reactor on the electrical and thermal transport properties of n-type Bi₂Te_2.7Se_0.3 and p-type Bi_0.5Sb_1.5Te₃ thermoelectric alloys prepared by cold-pressing and molding is investigated. After neutron irradiation, the properties of thermoelectric materials fluctuate, which is related to the material type and irradiation fluence. Different from p-type thermoelectric materials, neutron irradiation has a positive effect on n-type Bi₂Te_2.7Se_0.3 materials. This result might be due to the increase of carrier mobility and the optimization of electrical conductivity. Afterward, the effects of p-type and n-type TE devices with different treatments on the output performance of TE devices are further discussed. The positive and negative effects caused by irradiation can cancel each other to a certain extent. For TE devices paired with p-type Bi_0.5Sb_1.5Te₃ and n-type Bi₂Te_2.7Se_0.3 thermoelectric legs, the generated power and conversion efficiency are stable after neutron irradiation.

• 한국분말재료학회지
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• 제23권2호
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• pp.126-131
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• 2016

The recent rise in applications of thermoelectric materials has attracted interest in studies toward the fabrication of thermoelectric materials using mass production techniques. In this study, we successfully fabricate n-type $Bi_2Te_{2.7}Se_{0.3}$ material by a combination of mass production powder metallurgy techniques, gas atomization, and spark plasma sintering. In addition, to examine the effects of hydrogen reduction in the microstructure, the thermoelectric and mechanical properties are measured and analyzed. Here, almost 60% of the oxygen content of the powder are eliminated after hydrogen reduction for 4 h at $360^{\circ}C$. Micrographs of the powder show that the reduced powder had a comparatively clean surface and larger grain sizes than unreduced powder. The density of the consolidated bulk using as-atomized powder and reduced atomized powder exceeds 99%. The thermoelectric power factor of the sample prepared by reduction of powder is 20% better than that of the sample prepared using unreduced powder.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.686-687
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• 2006

The encapsulated induction melting and hot pressing were employed to prepare Fe-doped $CoSb_3$ skutterudites and their thermoelectric properties were investigated. Single phase $\delta-CoSb_3$ was successfully obtained by the subsequent heat treatment at 773K for 24 hours. Iron atoms acted as electron acceptors by substituting cobalt atoms. Thermoelectric properties were remarkably improved by the appropriate doping. $Co_{0.7}Fe_{0.3}Sb_3$ was found as an optimum composition for best thermoelectric properties in this work.

• 한국분말재료학회지
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• 제30권4호
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• pp.318-323
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• 2023

The thermoelectric effect, which converts waste heat into electricity, holds promise as a renewable energy technology. Recently, bismuth telluride (Bi2Te3)-based alloys are being recognized as important materials for practical applications in the temperature range from room temperature to 500 K. However, conventional sintering processes impose limitations on shape-changeable and tailorable Bi₂Te₃ materials. To overcome these issues, three-dimensional (3D) printing (additive manufacturing) is being adopted. Although some research results have been reported, relatively few studies on 3D printed thermoelectric materials are being carried out. In this study, we utilize extrusion 3D printing to manufacture n-type Bi_1.7Sb_0.3Te₃ (N-BST). The ink is produced without using organic binders, which could negatively influence its thermoelectric properties. Furthermore, we introduce graphene oxide (GO) at the crystal interface to enhance the electrical properties. The formed N-BST composites exhibit significantly improved electrical conductivity and a higher Seebeck coefficient as the GO content increases. Therefore, we propose that the combination of the extrusion 3D printing process (Direct Ink Writing, DIW) and the incorporation of GO into N-BST offers a convenient and effective approach for achieving higher thermoelectric efficiency.

• 한국분말재료학회지
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• 제29권2호
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• pp.152-158
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• 2022

Thermoelectric materials can reversely convert heat and electricity into each other; therefore, they can be very useful for energy harvesting from heat waste. Among many thermoelectrical materials, SnSe exhibits outstanding thermoelectric performance along the particular direction of a single crystal. However, single-crystal SnSe has poor mechanical properties and thus it is difficult to apply for mass production. Therefore, polycrystalline SnSe materials may be used to replace single-crystal SnSe by overcoming its inferior thermoelectric performance owing to surface oxidation. Considerable efforts are currently focused on enhancing the thermoelectric performance of polycrystalline SnSe. In this study, we briefly review various enhancement methods for SnSe thermoelectric materials, including doping, texturing, and nano-structuring. Finally, we discuss the future prospects of SnSe thermoelectric powder materials.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1446-1448
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• 1997

TEC(Thermoelectric conversion) is direct conversion method between thermal energy and electric energy. We studied on the mechanical, electrical and thermal properties of thermoelectric module and made experimental thermoelectric generator with BiTe material.

• Journal of the Korean Physical Society
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• 제73권11호
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• pp.1760-1763
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• 2018

To attain power generation with body heat, the thermal resistance matched design of the thermoelectric generator was the principal factor which was not critical in the case of thermoelectric generator for the waste heat generation. The dimension of thermoelectric legs and the number of thermoelectric leg-pairs dependent output power performances of the thermoelectric generator on the human wrist condition was simulated using 1-dimensional approximated heat flow equations with the temperature dependent material coefficients of the constituent materials and the dimension of the substrate. With the optimum thermoelectric generator design, thermoelectric generator modules were fabricated by using newly developed fabrication processes, which is mass production possible. The electrical properties and the output power characteristics of the fabricated thermoelectric modules were characterized by using a home-made test set-up. The output voltage of the designed thermoelectric generator were a few tens of millivolts and its output power was several hundreds of microwatts under the conditions at the human wrist. The measured output voltage and power of the fabricated thermoelectric generator were slightly lower than those of the designed thermoelectric generator due to several reasons.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.53-53
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• 2018

Thermoelectric materials can convert directly waste heat to electricity and vice versa. The improvement of the thermoelectric efficiency strongly depends on the dimensionless figure of merit, $ZT=S^2{\sigma}T/{\kappa}$, where S is the Seebeck coefficient, ${\sigma}$ is the electrical conductivity, T is the absolute temperature, and ${\kappa}$ is the thermal conductivity. The thermal conductivity consists of the electronic contribution (${\kappa}_e$) and phonon contribution (${\kappa}_{ph}$). It is very challenge to increase the power factor, $S^2{\sigma}$ and to reduce the thermal conductivity simultaneously because the power factor and electronic thermal conductivity are coupled. One strategy is to decrease the phonon thermal conductivity. The phonon thermal conductivity can be decreased by controlling the grain size and structural defects such as dislocations and twinning. In order to achieve enhancements in thermoelectric efficiency, microstructures that can form numerous interfaces have been investigated intensively for controlling the transport of charge carriers and heat carrying phonons. In this presentation, we report the heterogeneous microstructure of $Mg_2Si_{0.6}Sn_{0.4}$ thermoelectric materials and investigation of its influence on thermoelectric properties.

• Journal of the Korean Physical Society
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• 제73권11호
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• pp.1684-1690
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• 2018

The layered semiconductors $Bi_2O_2Q$ (Q = S, Se) consists of $Bi_2O_2$ layers sandwiched by Q square nets. On the basis of density functional theory calculations, we examined the thermoelectric properties of $Bi_2O_2S$, $Bi_2O_2Se$ as well as hypothetical structure of $Bi_2O_2$($S_{0.5}Se_{0.5}$) consisting of mixed chalcogen nets. The thermoelectric power factor of $Bi_2O_2S_{0.5}Se_{0.5}$ is much greater than those of $Bi_2O_2S$ and $Bi_2O_2Se$, suggesting that introducing mixed chalcogen net in $Bi_2O_2Q$ is a possible way of enhancing the thermoelectric property of $Bi_2O_2Q$.