• Journal of Urban Science
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• v.9 no.1
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• pp.1-6
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• 2020

The thermoelectric characteristics of alkali activated slag composites containing multi-walled carbon nanotubes (MWCNT) was investigated in the present study. Three different MWCNT contents and exposed temperatures were considered, and their thermoelectric-related properties and internal structures were analyzed. It was found that the alkali activated slag composite with MWCNT 2.0 wt.% and the exposed temperature of 150℃ were the optimal condition to obtain the highest Seebeck coefficient and power factor. Based on the feasibility study, the extended size thermoelectric module with 130 elements was fabricated, and tested the electricity production capacity. Consequently, the present thermoelectric module produced 30.83 ㎼ of electricity at ∆T=178.4℃.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.175-180
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• 2008

Thermoelectric materials convert temperature difference to electric power for power generation and vice versa for refrigeration. Recent advances in enhancing the thermoelectric figure-of-merit shed light on efficient power generation from the waste heat available in industries and vehicles. Nanoscale phenomena with both nanoscale constituent-embedded bulk samples and nanoscale materials proving enhanced thermoelectric performance have been widely reviewed. Bulk materials of crystal-orientation and nano-structured particle embedding seem to promise a higher thermoelectric figure-of-merit and an effective power generation application. As a preliminary study, Si-Ge nanocomposite was prepared with spark plasma sintering method and its properties were examined.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.3
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• pp.1-6
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• 2000

A simple and compact type of thermoelectric generator was developed as the energy saving system using waste hot water and low temperature waste heat sources. Sixteen of Bi-Te thermoelectric modules were packaged in series for thermoelectric conversion system using hot water as heat source. The thermoelectric generator shows the power output of about 4.5 W with the temperature difference of about 75 K at 40 $\Omega$ and 0.35 A for the electrical resistance and current of the used thermoelectric module, respectively.

• Journal of Powder Materials
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• v.18 no.5
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• pp.401-405
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• 2011

Half-heusler phase ZrNiSn is one of the potential thermoelectric materials for high temperature application. In an attempt to investigate the effect of Sb doping on thermoelectric properties, half-heusler phase $ZrNiSn_{1-x}Sb_x$ ($0{\leq}x{\leq}0.08$) was synthesized by mechanical alloying of stoichiometric elemental powder compositions, and consolidated by vacuum hot pressing. Phase transformations during mechanical alloying and hot consolidation were investigated using XRD. Sb doped ZrNiSn was successfully produced in all doping ranges by vacuum hot pressing using as-milled powders without subsequent annealing. Thermoelectric properties as functions of temperature and Sb contents were evaluated for the hot pressed specimens. Sb doping up to x=0.04 in $ZrNiSn_{1-x}Sb_x$ was shown to be effective on thermoelectric properties and the figure of merit (ZT) was shown to reach to the maximum at x=0.02 in this study.

• Proceedings of the SAREK Conference
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• 2007.11a
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• pp.640-645
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• 2007

An experimental apparatus to show the hot spot cooling of an IC chip using a thermoelectric cooler is developed. The spot heating in very small area is achieved by the applying CO$_2$ laser source and temperatures are measured using miniature thermocouples. The active effects of thermoelectric cooler on the hot spot cooling system such as rapid heat spreading in the chip and lowering the peak temperature around the hot spot region are investigated. The experimental results are simulated numerically using the TAS program, which the performance characteristics such as Seebeck coefficient, electrical resistance and thermal conductivity of the thermoelectric cooler are searched by trial and error. Good agreements are obtained between numerical and experimental results if the appropriate performance data of the thermoelectric cooler are given.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.227-233
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• 2011

The low efficiency of bulk thermoelectric materials has limited the widespread application of thermoelectric power generation. Theoretical and experimental investigations indicate that materials prepared in the form of nanowires show higher thermoelectric coefficients, thus promising to revolutionize the field. This article reviews the basics of thermoelectric power generation, conventional devices, the role of nanowires and the current status of the field.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.445-446
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• 2009

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.2
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• pp.189-194
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• 2015

In this study, the heat radiation performance of COB LED according to the structure of thermoelectric device were compared. Thermoelectric device of the sheet copper structure and ceramic structure were used for bonding with the heating part of the COB LED. The temperature distribution in the bonding part of the thermoelectric device of COB LED was measured with a contact-type thermometer. The temperature variation of the thermoelectric device was measured by inputting the currents of 0.1A, 0.3A, 0.5A, and 0.7A. When 0.7A was applied, the temperature of the bonding part where there was a heat aggregation phenomenon of the COB LED was $59^{\circ}C$ for thermoelectric device of the sheet copper structure and $67^{\circ}C$ for the thermoelectric device of the ceramic structure. Therefore, the sheet copper thermoelectric device whose temperature was lower by $9^{\circ}C$ showed better heat radiation performance than those of the ceramic structure.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.15 no.4
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• pp.125-133
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• 2016

From the first application of a thermoelectric module to nowtoday, it has been more than half a century. The application of a thermoelectric module is becoming more and more widely accepted since, people's requirement rely more and more on the efficiency of thermoelectric modules and their reliability become higher and higher. So people pay more and more attention to the thermoelectric module. In Around the world, the more research for into improving the efficiency of thermoelectric modules is focused on the current materials. at present. However, the research of into available materials had has some limitations, and the research of materials had reached a bottleneckthere are limits to current applications. On the other hand, from the production process, if we assembled by materials withoutmodules without any damages and achieve the ideal state of a joint, we can make the a product to maximize performance and have a longer service life. SoTherefore, in this study we will prove the relationship between the any defects inside and the efficiency of a thermoelectric module to improve the quality management and performance of modern thermoelectric modules at present.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.443-447
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• 2009

Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_{2}Te_{3}$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $5{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_{2}Te_{3}$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_{2}Te_{3}$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3 ${\mu}m$ is obtained at the temperature difference of 45 K.