• Journal of the Korean Ceramic Society
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• v.56 no.5
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• pp.453-460
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• 2019

To reduce residual pores of composites and obtain a dense matrix, SiC_f/SiC composites were fabricated by chemical vapor deposition (CVI) using SiC nanorods. SiC nanorods were uniformly grown in the thickness direction of the composite preform when the reaction pressure was maintained at 50 torr or 100 torr at 1,100℃. When SiC nanorods were grown, the densities of the composites were 2.57 ~ 2.65 g/㎤, higher than that of the composite density of 2.47 g/㎤ for non-growing of SiC nanorods under the same conditions; grown nanorods had uniform microstructure with reduced large pores between bundles. The flexural strength, fracture toughness and thermal conductivity (room temperature) of the SiC nanorod grown composites were 412 ~ 432 MPa, 13.79 ~ 14.94 MPa·m^1/2 and 11.51 ~11.89 W/m·K, which were increases of 30%, 25%, and 25% compared to the untreated composite, respectively.

• Carbon letters
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• v.4 no.1
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• pp.36-39
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• 2003

Carbon and carbon-based materials are used in nuclear reactors and there has recently been growing interest to develop graphite and carbon based materials for high temperature nuclear and fusion reactors. Efforts are underway to develop high density carbon materials as well as amorphous isotropic carbon for the application in thermal reactors. There has been research on coated nuclear fuel for high temperature reactor and research and development on coated fuels are now focused on fuel particles with high endurance during normal lifetime of the reactor. Since graphite as a moderator as well as structural material in high temperature reactors is one of the most favored choices, it is now felt to develop high density isotropic graphite with suitable coating for safe application of carbon based materials even in oxidizing or water vapor environment. Carboncarbon composite materials compared to conventional graphite materials are now being looked into as the promising materials for the fusion reactor due their ability to have high thermal conductivity and high thermal shock resistance. This paper deals with the application of carbon materials on various nuclear reactors related issues and addresses the current need for focused research on novel carbon materials for future new generation nuclear reactors.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.17.2-17.2
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• 2011

Double-walled carbon nanotubes (DWCNTs) were grown with vertical alignment on a Si wafer by using catalytic thermal chemical vapor deposition. This study investigated the effect of pre-annealing time of catalyst on the types of CNTs grown on the substrate. The catalyst layer is usually evolved into discretely distributed nanoparticles during the annealing and initial growth of CNTs. The 0.5-nm-thick Fe served as a catalyst, underneath which Al was coated as a catalyst support as well as a diffusion barrier on the Si substrate. Both the catalyst and support layers were coated by using thermal evaporation. CNTs were synthesized for 10 min by flowing 60 sccm of Ar and 60 sccm of H2 as a carrier gas and 20 sccm of C2H2 as a feedstock at 95 torr and $750^{\circ}C$. In this study, the catalyst and support layers were subject to annealing for 0~420 sec. As-grown CNTs were characterized by using field emission scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, and atomic force microscopy. The annealing for 90~300 sec caused the growth of DWCNTs as high as ~670 ${\mu}m$ for 10 min while below 90 sec and over 420 sec 300~830 ${\mu}m$-thick triple and multiwalled CNTs occurred, respectively. Several radial breathing mode (RBM) peaks in the Raman spectra were observed at the Raman shifts of 112~191 cm-1, implying the presence of DWCNTs, TWCNTs, MWCNTs with the tube diameters 3.4, 4.0, 6.5 nm, respectively. The maximum ratio of DWCNTs was observed to be ~85% at the annealing time of 180 sec. The Raman spectra of the as-grown DWCNTs showed low G/D peak intensity ratios, indicating their low defect concentrations. As increasing the annealing time, the catalyst layer seemed to be granulated, and then grown to particles with larger sizes but fewer numbers by Ostwald ripening.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.123-123
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• 2003

탄소나노튜브는 지금까지의 많은 연구를 통해 다양한 분야에 대한 응용 가능성이 확인되었으며, 그 중에서도 특히 탄소나노튜브를 이용한 전계방출표시소자(carbon nanotube field emission display, CNT-FED)는 상용화를 눈앞에 두고 있는 상황이다. 본 연구에서는 탄소나 노튜브를 합성할 수 있는 여러 가지 방법 중에서 열화학기상증착법(thermal chemical vapor deposition, thermal CVD)을 이용하여 유리기판 위에 탄소나노튜브를 합성하였다. Electron beam evaporation으로 유리기판 위에 전극층으로 Cr을 150nm를 증착하고 연속하여 촉매층인 Invar(Fe-53%Ni-6%Co 합금)를 10nm의 두께로 형성하였다. 사진식각으로 Cr층을 line 패턴한 후 Cr line 내의 Invar층을 line 및 dot 패턴하였다. 나노튜브 합성을 위해 480-58$0^{\circ}C$까지 진공분위기 또는 질소 분위기에서 20분간 승온한 후 CO(150sccm)와 H$_2$(1200sccm)를 주입하여 20분간 성장시키고 질소 분위기에서 냉각시켰다. 성장된 탄소나노튜브는 SEM, TEM, Raman spectroscopy 등을 통하여 구조 및 형상분석을 하였다. 진공승온의 경우 탄소불순물인 a-C이 많은 양 증착 되었으며 탄소나노튜브는 온도에 따라 1-5$\mu\textrm{m}$의 두께로 성장하였으나, 질소분위기 승온의 경우는 a-C이 거의 증착되지 않았으며 나노튜브의 두께가 10-20$\mu\textrm{m}$였다. 본 연구에서는 diode구조를 갖는 탄소나노튜브 에미터의 수명예측을 위해 여러 가지 가속측정조건에서 전계방출 특성을 연구하였다. Anode와 cathode 간의 간격을 400$\mu\textrm{m}$로 유지한 diode 구조에 대해 $10^{-6}$ torr 이하의 진공에서 전계방출을 측정하였다. 100 line의 에미터를 60Hz의 주파수에서 1/100 duty로 구동하였으며, duty비 증가에 따라 pulse의 on-time을 고정하고 frequency를 변화시켰다. dc까지 duty비가 증가됨에 따라 방출전류의 양이 선형적으로 증가하였다. 전압을 일정하게 고정시키고 각 duty비에서 시간에 따라 방출전류를 측정한 결과 duty비가 높을수록 방출전류가 시간에 따라 급격히 감소하였다. 각 duty비에서 방출전류의 양이 1/2로 감소하는 시점을 에미터의 수명으로 볼 때 duty비 대 에미터 수명관계를 구해 높은 duty비에서 전계방출을 시킴으로써 실제의 구동조건인 낮은 duty비에서의 수명을 단시간에 예측할 수 있었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.4
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• pp.155-159
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• 2008

In this work, we report synthesis of free-standing ZnO/Zn core-shell micro-polyhedrons using metal Zn pellets as a source material by the thermal chemical vapor deposition process. Scanning and transmission electron microscopy measurements were introduced to investigate morphologies and structural properties of as-grown ZnO/Zn core-shell micro-polyhedrons. It was found that micro-polyhedrons were composed of inner single-crystalline metal Zn surrounded by single-crystalline ZnO nanorod arrays. The inner single crystalline metal Zn with micro-scale diameter has a hexagonal crystal structure. Diameter and height of ZnO nanorods covering the metal Zn surface are below 10 nm and 100 nm, respectively. It was also confirmed that c-axis oriented ZnO nanorods are single crystalline with a hexagonal crystal structure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.290-296
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• 2003

The heteroepitaxial growth of crystalline 3C-SiC on 6H-SiC substrates using high purity silane ($SiH_4$) and prophane ($C_3H^8$) was carried out by thermal chemical vapor deposition, and growth characteristics were investigated in this study. In case that the flow ratio of C/Si and flow rate of $H_2$ were 4.0 and 5.0 slm, respectively, the growth rate of epilayers was about 1.8 $\mu$m/h at growth temperature of $1200^{\circ}C$. The Nomarski surface morphology, X-ray diffraction, Raman spectroscopy, and photoluninescence of grown epilayers were measured to investigate the crystallinity. In this study, the high quality of crystalline 3C-SiC heteropitaxial layers was observed at growth temperature of above $1150^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.109-113
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• 2004

Zn diffusions in InP have been studied by electrochemical capacitance voltage. The InP layer was grown by metal organic chemical vapor deposition, and $Zn_3P_2$ thin film was deposited on the epitaxial substrates. The samples annealed in a rapid thermal annealing. It is demonstrated that surface hole concentration as high as $1\times10^{19}\textrm{cm}^{-3}$ can be achieved. When the Zn diffusion was carried at $550^{\circ}C$ and 5-20 min., the diffusion depth of hole concentration moves from 1.51$\mu\textrm{m}$ to 3.23 $\mu\textrm{m}$, and the diffusion coeffcient of Zn is $5.4\times10^{-11}\textrm{cm}^2$/sec. After activation, the concentration is two orders higher than that of untreated sample at 0.30 $\mu\textrm{m}$ depth. As the annealing time is increase, the hole concentration remains almost constant, except deep depth. It means that excess Zn interstitials exist in the doped region is rapidly diffusion into the undoped region and convert into substitutional When the thickness of $SiO_2$ thin film is above 1,000$\AA$, the hole concentration becomes stable distribution.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.57-58
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• 2000

we have grown vertically aligned carbon nanotubes on a large area of Co-Ni codeposited Si substrates by thermal chemical vapor deposition using $C_2H_2$ gas. The carbon nanotubes grown by the thermal chemical vapor deposition are multi-wall structure, and the wall suface of nanotubes is covered with defective carbons or carbonaceous particles. The carbon nanotubes range from 50 to 120 nm in diameter and about 130 ${\mu}m$ in length at $950\;^{\circ}C$. Steric hindrance between nanotubes at an initial stage of the growth forces nanotubes to align vertically. The turn-on voltage was about 0.8 $V/{\mu}m$ with a current density of 0.1 ${\mu}A/cm^2$ and emission current reveals the Fowler-Nordheim mode.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.28 no.12
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• pp.1632-1639
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• 2004

Numerical calculation has been performed to investigate the transport phenomena in the horizontal reactor which has two different gas inlets for MOCVD(metalorganic chemical vapor deposition). The full elliptic governing equations for continuity, momentum, energy and chemical species are solved by using the commercial code FLUENT. It is investigated how thermal characteristics, reactor geometry, and the operating parameters affect flow fields, mass fraction of each reactants. The numerical simulations demonstrate that flow rate of each species, inlet geometry of the reactor, and its distance from the susceptor as well as the inclination of upper wall of reactor can be used effectively to optimize reactor performance. The commonly used idealized boundary conditions are also investigated to predict flow phenomena in the actual deposition system.

• Journal of Powder Materials
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• v.22 no.2
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• pp.122-128
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• 2015

In this study, titanium(Ti) meshes and porous bodies are employed to synthesize carbon nanotubes(CNTs) using methane($CH_4$) gas and camphene solution, respectively, by chemical vapor deposition. Camphene is impregnated into Ti porous bodies prior to heating in a furnace. Various microscopic and spectroscopic techniques are utilized to analyze CNTs. It is found that CNTs are more densely and homogeneously populated on the camphene impregnated Ti-porous bodies as compared to CNTs synthesized with methane on Ti-porous bodies. It is elucidated that, when synthesized with methane, few CNTs are formed inside of Ti porous bodies due to methane supply limited by internal structures of Ti porous bodies. Ti-meshes and porous bodies are found to be multi-walled with high degree of structural disorders. These CNTs are expected to be utilized as catalyst supports in catalytic filters and purification systems.