• 제목/요약/키워드: thermal vapor deposition

검색결과 539건 처리시간 0.027초

Low temperature deposition of carbon nanofilaments using vacuum-sublimated $Fe(CO)_5$ catalyst with thermal chemical vapor deposition

  • Kim, Nam-Seok;Kim, Kwang-Duk;Kim, Sung-Hoon
    • 한국결정성장학회지
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    • 제17권1호
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    • pp.18-22
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    • 2007
  • Carbon nanofilaments were deposited on silicon oxide substrate by thermal chemical vapor deposition method. We used $Fe(CO)_5$ as the catalyst for the carbon nanofilaments formation. Around $800^{\circ}C$ substrate temperature, the formation density of carbon nanofilaments could be enhanced by the vacuum sublimation technique of $Fe(CO)_5$, compared with the conventional spin coating technique. Finally, we could achieve the low temperature, as low as $350^{\circ}C$, formation of carbon nanofilaments using the sublimated Fe-complex nanograins with thermal chemical vapor deposition. Detailed morphologies and characteristics of the carbon nanofilaments were investigated. Based on these results, the role of the vacuum sublimation technique for the low temperature deposition of carbon nanofilaments was discussed.

열증착 시료 제작법이 적용된 MALDI 질량분석법에 의한 불용성 Sorbitol 유도체의 분자량 결정 (Application of Thermal Vapor Deposition Method for MALDI-MS : Molecular Weight Determination of Insoluble Sorbitol Derivatives)

  • 신철민;남해선;김성호
    • 한국산학기술학회논문지
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    • 제4권3호
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    • pp.260-262
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    • 2003
  • A thermal vapor deposition method for crystallization of insoluble analytes with matrix is established as a new sample preparation method for matrix-assisted laser desorption/ionization mass spectrometry (MALDI-MS). A mixture of mono, bis and tris(p-ethyl benzylidene) sorbitols was incorporated into microcrystals of ferulic acid, which was confirmed by confocal micrographs. Molecular masses of sorbitol derivatives were determined in this way by MALDI-MS without thermal decomposition.

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열증착 시료 제작법이 적용된 MALDI 질량분석법 에 의한 불용성 Sorbitol 유도체의 분자량 결정 (Application of Thermal Vapor Deposition Method for MALDI-MS : Molecular Weight Determination of Insoluble Sorbitol Derivatives)

  • 신철민;남해선;김성호
    • 한국산학기술학회:학술대회논문집
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    • 한국산학기술학회 2003년도 춘계학술발표논문집
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    • pp.311-313
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    • 2003
  • A thermal vapor deposition method for crystallization of insoluble analysis with matrix is established as a new sample preparation method for matrix-assisted laser desorption/ionization mass spectrometry (MALDI-MS). A mixture of mono, bis and tris(p-ethyl benzylidene) sorbitols was incorporated into microcrystals of ferulic acid, which was confirmed by confocal micrographs. Molecular masses of sorbitol derivatives were determined in this way by MALDI-MS without thermal decomposition.

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The geometry change of carbon nanofilaments by SF6 incorporation in a thermal chemical vapor deposition system

  • Kim, Sung-Hoon
    • 한국결정성장학회지
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    • 제21권3호
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    • pp.119-123
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    • 2011
  • Carbon nanotilaments (CNFs) could be synthesized on nickel catalyst layer-deposited silicon oxide substrate using $C_2H_2$ and$H_2$ as source gases under thermal chemical vapor deposition system. By the incorporation of $SF_6$ as a cyclic modulation manner, the geometries of carbon coils-related materials, such as nano-sized coil and wave-like nano-sized coil could be observed on the substrate. The characteristics (formation density and morphology) of as-grown CNFs with or without $SF_6$ incorporation were investigated. Diameter size reduction for the individual CNFs-related shape and the enhancement of the formation density of CNFs-related material could be achieved by the incorporation of $SF_6$ as a cyclic modulation manner. The cause for these results was discussed in association with the slightly increased etching ability by $SF_6$ addition and the sulfur role in SF 6 for the geometry change.

Thermal Evaporation 증발원 개발 및 응용에 관한 연구 (A Study on the Development and Application of Thermal Evaporation Source)

  • 김관도
    • 반도체디스플레이기술학회지
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    • 제19권3호
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    • pp.19-22
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    • 2020
  • The thermal evaporation source is used to prepare thin films by physical vapor deposition. Materials of metals, organic materials, were tested and explained for thermal evaporation experiments. The developed effusion cell performance depends on the type of deposition material, the size of the crucible, the performance of the reflector, etc. and the proper conditions were found by producing, comparing and analyzing several sets of effusion cell to quantitatively evaluate the performance of the cell. The effusion cell for thermal evaporation source is used to prepare thin films of Ag, Cu, Mg.

PECVD법에 의해 제조된 Sb-doped $SnO_2$ 박막의 증착거동 및 전기적 특성 (Deposition Behaviors and Electrical Properties of Sb-doped $SnO_2$ Films by Plasma Enhanced Chemical Vapor Deposition)

  • 김근수;서지윤;이희영;김광호
    • 한국세라믹학회지
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    • 제37권2호
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    • pp.194-200
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    • 2000
  • Sb-doped tin oxide films were deposited on Corning glass 1737 substrate by plasma enhanced chemical vapor deposition(PECVD) technique using a gas mixture of SnCl4/SbCl5/O2/Ar. The deposition behaviors of tin oxide films by PECVD were compared with those by thermal CVD, and effects of deposition temperature, r.f. power and Sb doping on the electrical properties of tin oxide films were investigated. PECVD technique largely increased the deposition rate and smoothed the surface of tin oxide films compared with thermal CVD. Electrical resistivity decreased with doping of Sb due to the increase of carrier concentration. However, large doping of Sb diminished carrier concentration and mobility due to the decrease of crystallinity, which resulted in the increase of electrical resistivity. As the deposition temperature and r.f. power increased, Cl content in the film decreased.

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OLED 증착을 위한 선형증발원 히터 위치선정 (Selection of Heater Location in Linear Source for OLED Vapor Deposition)

  • 주영철;한충환;엄태준;이상욱;김국원;권계시
    • 제어로봇시스템학회논문지
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    • 제14권6호
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    • pp.515-518
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    • 2008
  • Organic light emitting diode(OLED) is one of the most promising type of future flat panel display. A linear source is used to deposite organic vapor to a large size OLED substrate. An electric heater which is attached on the side of linear source heats the organic powder for the sublimation. The nozzle of heater, which is attached at the top of the linear source has an optimal temperature. An numerical analysis has been performed to find optimal heater position for the optimal nozzle temperature. A commercial CFD program, FLUENT, is used on the analysis. Two-dimensional and three-dimensional analysis have been performed. The analysis showed that the heater should be attached at the outer side of crucible wall rather than inner side of housing, which was original design. Eighteen milimeter from the top of the linear source was suggested as the optimal position of heater. Improving thermal performance of linear source not only helps the uniformity of organic vapor deposition on the substrate but also increase productibity of vapor deposition process.

Creation of Diamond/Molybdenum Composite Coating in Open Air

  • Ando, Yasutaka;Tobe, Shogo;Tahara, Hirokazu
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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    • pp.1313-1314
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    • 2006
  • For improvement of wear resistance property of atmospheric thermal plasma sprayed molybdenum (Mo) coating, diamond deposition on the atmospheric plasma sprayed molybdenum coating by the combustion flame chemical vapor deposition (CFCVD) has been operated. In this study, to diminish the thermal damage of the substrate during operation, a thermal insulator was equipped between substrate and water-cooled substrate holder. Consequently, diamond particles could be created on the Mo coating without fracture and peeling off. From these results, it was found that this process had a high potential in order to improve wear resistance of thermal sprayed coating.

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Water - Assisted Efficient Growth of Multi-walled Carbon Nanotubes by Thermal Chemical Vapor Deposition

  • Choi, In-Sung;Jeon, Hong-Jun;Kim, Young-Rae;Lee, Nae-Sung
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.418-418
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    • 2009
  • Vertically aligned arrays of multi-walled carbon nanotube (MWCNT) on layered Si substrates have been synthesized by water-assisted thermal chemical vapor deposition (CVD). We studied changes in growth by parameters of growth temperature, growth time, rates of gas and annealing time of catalyst. Also, We grew CNTs by adding a little amount of water vapor to enhance the growth of CNTs. $H_2$, Ar, and $C_2H_2$ were used as carrier gas and feedstock, respectively. Before growth, Fe served as catalyst, underneath which AI were coated as an underlayer and a diffusion barrier, respectively, on the Si substrate. The water vapor had a greater effect on the growth of CNTs on a smaller thickness of catalyst. When the water vapor was introduced, the growth of CNTs was enhanced than without water. CNTs grew 1.29 mm for 10 min long by adding the water vapor, while CNTs were 0.73 mm long without water vapor for the same period of time. CNTs grew up to 1.97 mm for 30 min prior to growth termination under adding water vapor. As-grown CNTs were characterized by using scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), and Raman spectroscopy.

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VDP(Vapor Deposition Polymerization) 방법을 이용한 유기 게이트 절연막의 대한 연구 (Study on the Organic Gate Insulators Using VDP Method)

  • 표상우;심재훈;김정수;김영관
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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    • pp.185-190
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    • 2003
  • In this paper, it was demonstrated that the organic thin film transistors were fabricated by the organic gate insulators with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) and ODA, and cured at $150^{\circ}C$ for 1hr. Electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure obtained to the saturated slop in the saturation region and the subthreshold non-linearity in the triode region. Field effect mobility, threshold voltage, and on-off current ratio in $0.45\;{\mu}m$ thick gate dielectric layer were about $0.17\;cm^2/Vs$, -7 V, and $10^6\;A/A$, respectively. Details on the explanation of compared to organic thin-film transistors (OTFTS) electrical characteristics of ODPA-ODA and 6FDA-ODA as gate insulators by fabricated thermal co-deposition method.

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