• Title/Summary/Keyword: thermal stress device

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Influences of Bending Temperature on the I$_{c}$ Degradation Behavior of Bi-2223 tapes under Bending

  • Shin Hyung Seop;Dizon John Ryan C.;Katagiri Kazumune;Kuroda Tsuneo
    • Progress in Superconductivity and Cryogenics
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    • v.7 no.2
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    • pp.11-15
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    • 2005
  • The I$_{c}$ degradation behavior of Bi-2223 tapes bent at RT and 77K were investigated using the bending device invented by Goldacker. Test results on fixing the tape at RT and 17K showed no difference. At 17K and RT bending, the critical strain was 0.67 and 0.50$\%$, respectively, for the VAM-l tape. For the AMSC tape, it was 0.94 and 0.88$\%$, respectively. These results show that there is additional residual stress in the superconducting filaments to be bent at 17K which shifts the formation of cracks into smaller bending radii. This was proved by computational analysis based on the mixture rule of composites. For the VAM-l tape, the Ie degradation behavior using the Goldacker type device shifted to higher strain levels at about 0.5$\%$, as compared with the FRP sample holders which have a critical bending strain of about 0.24$\%$. Also, for the externally reinforced AMSC tape, Ie degradation using the Goldacker type device begins at a higher strain level, at 0.88$\%$ as compared with using FRP sample holders, at 0.74$\%$. The difference between both cases can be explained by the tensile' and thermal stresses that the tapes were subjected to during fixing (soldering) when the FRP sample holders were used.

Growth and analysis of Copper oxide nanowire

  • Park, Yeon-Woong;Seong, Nak-Jin;Jung, Hyun-June;Chanda, Anupama;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.245-245
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    • 2009
  • l-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Copper oxide(CuO) has been realized as a p-type metal oxide semiconductor with narrow band gap of 1.2 -1.5eV. Copper oxide nanostructures can be synthesized by various growth method such as oxidation reaction, thermal evaporation thermal decomposition, sol-gel. and Mostly CuO nanowire prepared on the Cu substrate such as Copper foil, grid, plate. In this study, CuO NWs were grown by thermal oxidation (at various temperatures in air (1 atm)) of Cu metal deposited on CuO (20nm)/$SiO_2$(250nm)/Si. A 20nm-thick CuO layer was used as an adhesion layer between Cu metal and $SiO_2$

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Degradation of Ion-exchange Soda-lime Glasses Due to a Thermal Treatment (이온강화 소다라임 유리의 열처리에 따른 강화 풀림현상)

  • Hwang, Jonghee;Lim, Tae-Young;Lee, Mi Jai;Kim, Jin-Ho
    • Journal of the Korean Ceramic Society
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    • v.52 no.1
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    • pp.23-27
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    • 2015
  • Recently, the use of ion-exchange strengthened glass has increased sharply, as it is now used as the cover glass for smart phone devices. Therefore, many researchers are focusing on methods that can be used to strengthen ion-exchange glass. However, research on how the improved strength can be maintained under thermal environment of device manufacturing is still insufficient. We tested the degradation of the characteristics of ion-exchange soda-lime glass samples, including their surface compressive stress characteristics, the depth of the ion-exchange layer (DOL), flexural strength, hardness, and modulus of rupture (MOR) values. Degradation of the characteristics of the ion-exchange glass samples occurred when they were heat-treated at a temperature that exceeded $350^{\circ}C$.

Thermal Frequency Tuning of Microactuator with Polymer Membrane (온도 변화를 이용한 고분자 막 마이크로 액추에이터의 공진 주파수 튜닝)

  • Lee, Seung-Hoon;Lee, Seok-Woo;Kwon, Hyuk-Jun;Lee, Kwang-Cheol;Lee, Seung-S.
    • Proceedings of the KSME Conference
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    • 2008.11a
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    • pp.1857-1862
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    • 2008
  • Resonant frequency tuning of micro devices is essential to achieve performance uniformity and high sensitivity. Previously reported frequency tuning methods using electrostatic force or mass deposition are not directly applicable to non-conducting polymer devices and have limitations such as dielectric breakdown or low tunable bandwidth. In this paper, thermally frequency-tunable microactuators with poly-dimethylsiloxane membranes are proposed. Permanent and/or nonpermanent frequency tunings are possible using a simple temperature control of the device. Resonant frequency and Q-factor variations of devices according to temperature change were studied using a micro heater and laser Doppler vibrometer. The initial resonant frequencies determined by polymer curing and hardening temperatures are reversibly tuned by thermal cycles. The measured resonant frequency of 9.7 kHz was tuned up by ${\sim}25%$ and Q-factor was increased from 14.5 to 27 as the micro heater voltage increased from 0 to 70 V.

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Damage Pattern and Operation Characteristics of a Thermal Magnetic Type MCCB according to Thermal Stress (열동전자식 MCCB의 열적 스트레스에 따른 소손 패턴 및 작동 특성)

  • Lee, Jae-Hyuk;Choi, Chung-Seog
    • Journal of the Korean Society of Safety
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    • v.28 no.3
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    • pp.69-73
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    • 2013
  • The purpose of this paper is to analyze the carbonization pattern and operation characteristics of an MCCB. The MCCB is consisted of the actuator lever, actuator mechanism, bimetallic strip, contacts, up and down operator, arc divider or extinguisher, metal operation pin, terminal part, etc. When the actuator lever of the MCCB is at the top or the internal metal operation pin is in contact with the front part, the MCCB is turned on or off. It means trip state if the actuator lever or the internal metal operation pin moves to back side. In the UL 94 vertical combustion test, white smoke occurred from the MCCB when an average of 17~24 seconds elapsed after the MCCB was ignited and black smoke occurred when an average of 45~50 seconds elapsed. It took 5~6 minutes for the MCCB surface to be half burnt and took an average of 8~9 minutes for the MCCB surface to be entirely burnt. In the UL 94 test, the MCCB trip device operated when an average 7~8 minutes elapsed. If the MCCB trip has occurred, it may have been caused by an electrical problem such as a short-circuit, overcurrent, etc., as well as fire heat. From the entire part combustion test according to KS C 3004, it was found that the metal operation pin could be moved to the MCCB trip position without any electrical problems.

Large-scale Simulation for Optimal Design of Composite Curved Piezoelectric Actuator (복합재료 곡면형 자동기의 최적설계를 위한 대규모 수치해석 연구)

  • Chung, Soon-Wan;Hwang, In-Seong;Kim, Seung-Jo
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 2005.04a
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    • pp.5-8
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    • 2005
  • In this paper, the electromechanical displacements of curved piezoelectric actuators composed of PZT ceramic and laminated composite materials are calculated based on high performance computing technology and the optimal configuration of composite curved actuator is examined. To accurately predict the local pre-stress in the device due to the mismatch in coefficients of thermal expansion, carbon-epoxy and glass-epoxy as well as PZT ceramic are numerically modeled by using hexahedral solid elements. Because the modeling of these thin layers increases the number of degrees of freedom, large-scale structural analyses are performed through the PEGASUS supercomputer, which is installed in our laboratory. In the first stage, the curved shape of the actuator and the internal stress in each layer are obtained by the cured curvature analysis. Subsequently, the displacement due to the piezoelectric force (which is resulted from applied voltage) is also calculated. The performance of composite curved actuator is investigated by comparing the displacements obtained by the variation of thickness and elastic modulus of laminated composite layers. In order to consider the finite deformation in the first analysis stage and include the pre-stress due to curing process in the second stage, nonlinear finite element analyses are carried out.

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Accelerated Degradation Stress of High Power Phosphor Converted LED Package (형광체 변환 고출력 백색 LED 패키지의 가속 열화 스트레스)

  • Chan, Sung-Il;Jang, Joong-Soon
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.4
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    • pp.19-26
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    • 2010
  • We found that saturated water vapor pressure is the most dominant stress factor for the degradation phenomenon in the package for high-power phosphor-converted white light emitting diode (high power LED). Also, we proved that saturated water vapor pressure is effective acceleration stress of LED package degradation from an acceleration life test. Test conditions were $121^{\circ}C$, 100% R.H., and max. 168 h storage with and without 350 mA. The accelerating tests in both conditions cause optical power loss, reduction of spectrum intensity, device leakage current, and thermal resistance in the package. Also, dark brown color and pore induced by hygro-mechanical stress partially contribute to the degradation of LED package. From these results, we have known that the saturated water vapor pressure stress is adequate as the acceleration stress for shortening life test time of LED packages.

A Study on the Geometric Design Parameters for Optimization of Cooling Device in the Magnetocardiogram System (심자도 장비의 냉각장치 특성 최적화를 위한 기하 설계 변수 연구)

  • Lee, Jung-Hee;Lee, Young-Shin;Lee, Yong-Ho;Lim, Hyun-Kyoon;Lee, Sung-Jin
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.34 no.2
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    • pp.153-160
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    • 2010
  • A magnetocardiogram (MCG) is a recording of the biomagnetic signals generated by cardiac electrical activity. Biomagnetic instruments are based on superconducting quantum interference devices (SQUIDs). A liquid cryogenic Dewar flask was used to maintain the superconductors in a superconducting state at a very low temperature (4 K). In this study, the temperature distribution characteristics of the liquid helium in the Dewar flask was investigated. The Dewar flask used in this study has a 30 L liquid helium capacity with a hold time of 5 d. The Dewar flask has two thermal shields rated at 150 and 40 K. The temperatures measured at the end of the thermal shield and calculated from the computer model were compared. This study attempted to minimize the heat transfer rate of the cryogenic Dewar flask using an optimization method about the geometric variable to find the characteristics for the design geometric variables in terms of the stress distribution of the Dewar flask. For thermal and optimization analysis of the structure, the finite element method code ANSYS 10 was used. The computer model used for the cryogenic Dewar flask was useful to predict the temperature distribution for the area less affected by the thermal radiation.

The Effect of Passivation Film with Inorganic/Epoxy Layers on Life Time Characteristics of OLED Device (OLED 내구성에 미치는 무기/에폭시층 보호막의 영향)

  • Lim, Jung-A;Ju, Sung-Hoo;Yang, Jae-Woong
    • Journal of Surface Science and Engineering
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    • v.42 no.6
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    • pp.287-293
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    • 2009
  • The passivation films with epoxy layer on LiF, $SiN_x$ and LiF/$SiN_x$ inorganic layer were fabricated on OLED to protect device from the direct damage of $O_2$ and $H_2O$ and to apply for a buffer layer between OLED device and passivation multi-layer with organic/inorganic hybrid structure as to diminish the thermal stress and expansion. Red OLED doped with 1 vol.% Rubrene in $Alq_3$ was used as a basic device. The device structure was multi-layer of ITO(150 nm) / ELM200_HIL(50 nm) / ELM002_HTL(30 nm) / $Alq_3$: 1 vol.% Rubrene(30 nm) / $Alq_3$(30 nm) / LiF(0.7 nm) / Al(100 nm). LiF/epoxy applied as a protective layer didn't contribute to the improvement of life time. While in case of $SiN_x$/epoxy, damage was done in the passivation process because of difference in heat expansion between films which could occur during the formation of epoxy film. Using LiF/$SiN_x$/epoxy improved lifetime significantly without suffering damage in the process of forming films, therefore, the best structure of passivation film with inorganic/epoxy layers was LiF/$SiN_x$/E1.

The Crack Resistance for PSG and Pe-Sin Films in the Semiconductor Device (반도체소자의 표면보호용 PSG, PE-SIN박막의 항균열특성에 대한 연구)

  • Ha, Jung-Min;Shin, Hong-Jae;Lee, Soo-Woong;Kim, Young-Wug;Lee, Jung-Kyu
    • Korean Journal of Materials Research
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    • v.3 no.2
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    • pp.166-174
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    • 1993
  • Abstract The crack resistance of PSG(Phosphosilicate Glass) and PE-SiN(Plasma Enhanced CVD S${i_2}{N_4}$)films deposited on aluminium thin films on Si substrate was analyzed in this study. PSG was deposited by AP-CVD and PE- SiN by PE-CVD. All the films underwent repeated heat cycles at 45$0^{\circ}C$for 30 min. Crack formation and development were examined between each heat cycle. The crack behavior was found to be closely related to the stresses in the films. The stress induced by the difference in thermal expansion behavior between the passivation layers and underlying aluminum film may cause the crack. Crack resistance decreases as the thickness of PSG films increases due to the high tensile stress of the films. Phosphorus in the PSG films releases tensile stress and consequently the stress of the films tends to show compressive stress. As a result, crack resistance increased as the concentratin of P in the PSG films increased. Crack resistance in the PE-SiN films also increased with compressive stress. An experimental model to predict crack generation in the PSG and PE-SiN films during heat cycle was suggested.

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