• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2001년도 춘계학술대회 논문집
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• pp.660-663
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• 2001

There is a mechanical device between the superstructure and substructure of a bridge, which transmit vertical load of superstructure to the substructure and absorb horizontal displacement of super structure due to thermal, dynamic, load, etc. In order to meet two requirements at once, the structure of roller between plates is widely used, and this roller between plates is widely used, and this roller shoe system is known to have smaller horizontal movement resistance than any other type of bridge shoe. In this study, rolling friction resistance characteristics of roller-plate friction system is investigated according to roller dimension, vertical load, hardness and roughness of roller and plate. On the base of the results, the rolling friction resistance of large scale roller shoe is evaluated using model experiment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.156-159
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• 2002

Film Bulk Acoustic wave Resonator (FBAR) using thin piezoelectric films can be fabricated as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents a MMIC compatible Suspended FBAR using surface micromachining. It is possible to make Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$membrane by using surface micromachining and its good effect is to remove the substrate silicon loss. FBAR was made on 2$\mu\textrm{m}$ multi-layered membrane using CVD process. According to our result, Fabricated film bulk acoustic wave resonator has two adventages. First, in the respect of device Process, our Process of the resonator using surface micromachining is very simple better than that of resonator using bull micromachining. Second, because of using the multiple layer, thermal expansion coefficient is compensated, so, the stress of thin film is reduced.

• 한국화재소방학회논문지
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• 제28권4호
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• pp.21-28
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• 2014

단상 2선식 MCCB의 관련 기준을 분석하고, 내열 특성을 평가하여 다음과 같은 결과를 얻었다. KS C 8321은 IEC 60947-2의 규격을 부합화되어 관련 규정 대부분이 유사하다. NFPA는 사용자 중심의 안전 규정을 제시한 것으로 시험 또는 검사 등의 세부 사항은 없으나 안전에 직접 관련이 있는 규정이 구체적으로 명시되어 있다. KS C 8321은 시험과 검사에 대한 항목이 세부적으로 분류되어 있는 것을 알 수 있다. 그러나 IEC 60947-2와 IEEE C37.51의 경우 시험 및 검사 항목을 간소화하거나 일부 생략되어 있다. 내열 실험 장치를 이용하여 MCCB를 $180^{\circ}C$에서 6 hr 동안 열적 스트레스를 인가하였을 때 작동 손잡이의 변형이 확인되었고, 트립 상태로 이동한 것이 확인되었다. 또한 고정걸이의 대부분은 녹아서 기능이 상실되었다. $90^{\circ}C$에서 MCCB가 열적 스트레스를 받았을 때 특이 사항이 없었고, $105^{\circ}C$ 및 $120^{\circ}C$의 온도에서는 고정걸이가 일부 변형되었다. $150^{\circ}C$에서는 고정걸이의 변형 및 명판의 변색 등을 확인할 수 있었다. MCCB의 내부 분석에서 트립바가 녹아서 없어진 것을 알 수 있었고, 상하 가동편은 상부로 이동한 것이 확인되었다. 내전압 6 kV를 60 s 동안 5회 인가한 실험에서 모든 항목이 안전하였다. 또한 절연저항계로 직류 500 V를 인가한 절연 성능 평가 역시 양호하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.414-414
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• 2008

Vertically well-aligned Ga-doped ZnO nanorods with different Ga contents were grown by thermal evaporation on a ZnO template. The Ga-doped ZnO nanorods synthesized with 50 wt % Ga with respect to the Zn content showed maximum compressive stress relative to the ZnO template, which led to a rapid growth rate along the c-axis due to the rapid release of stored strain energy. A further increase in the Ga content improved the conductivity of the nanorods due to the substitutional incorporation of Ga atoms in the Zn sites based on a decrease in lattice spacing. The p-n diode structure with Ga-doped ZnO nanorods, as a n-type, displayed a distinct white light luminescence from the side-view of the device, showing weak ultraviolet and various deep-level emissions.

• 마이크로전자및패키징학회지
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• 제26권4호
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• pp.141-148
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• 2019

모바일 기기로 사용되는 전자기판은 여러 가지 다양한 재료로 구성되어 있으며, 제조시나 사용 환경에서 온도가 변하면 각 재료의 열팽창 계수의 차이로 인하여 변형과 응력집중이 발생하게 된다. 그림자 무아레 방법은 비접촉으로 전체 영역에 걸친 면외변위를 측정하는 광학적 방법이지만 고감도 적용을 위해서는 탈봇 현상의 극복이 필요하다. 본 논문에서는 그림자 무아레 기법에서 발생하는 탈봇 현상을 극복하기 위하여 다양한 파장의 LED 광원을 이용하고, 파장의 변화가 탈봇 거리에 미치는 영향에 대해 연구하였다. 위상 이동법을 이용함으로써 10 ㎛/fringe 이내의 측정 감도를 확보할 수 있는 실험방법을 제안하고 이를 평가하였으며, 이 방법을 모바일 회로 기판의 열변형 측정에 적용하였다. 백색광을 사용한 경우에서는 탈봇 현상으로 인하여 측정이 불가능한 영역이 여러 군데 존재하였으나, 파란색 LED 광을 사용한 경우에는 대부분의 영역에서 감도 6.25 ㎛/fringe의 정밀한 무아레 무늬를 얻어낼 수 있음을 확인하였다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2010년도 임시총회 및 하계학술연구발표회
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• pp.79-79
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• 2010

Semimetallic bismuth (Bi) has been extensively investigated over the last decade since it exhibits very intriguing transport properties due to their highly anisotropic Fermi surface, low carrier concentration, long carrier mean free path l, and small effective carrier mass $m^*$. In particular, the great interest in Bi nanowires lies in the development of nanowire fabrication methods and the opportunity for exploring novel low-dimensional phenomena as well as practical application such as thermoelectricity[1]. In this work, we introduce a self-assembled interconnection of nanostructures produced by an on-film formation of nanowires (OFF-ON) method in order to form a highly ohmic Bi nanobridge. A Bi thin film was first deposited on a thermally oxidized Si (100) substrate at a rate of $40\;{\AA}/s$ by radio frequency (RF) sputtering at 300 K. The sputter system was kept in an ultra high vacuum (UHV) of $10^{-6}$ Torr before deposition, and sputtering was performed under an Ar gas pressure of 2m Torr for 180s. For the lateral growth of Bi nanowires, we sputtered a thin Cr (or $SiO_2$) layer on top of the Bi film. The Bi thin films were subsequently put into a custom-made vacuum furnace for thermal annealing to grow Bi nanowires by the OFF-ON method. After thermal annealing, the Bi nanowires cannot be pushed out from the topside of the Bi films due to the Cr (or $SiO_2$) layer. Instead, Bi nanowires grow laterally as a mean s of releasing the compressive stress. We fabricated a self-assembled Bi nanobridge (d=192 nm) device in-situ using OFF-ON through annealing at $250^{\circ}C$ for 10hours. From I-V measurements taken on the Bi nanobridge device, contacts to the nanobridge were found highly ohmic. The quality of the Bi nanobridge was also proved by the high MR of 123% obtained from transverse MR measurements. These results manifest the possibility of self-assembled nanowire interconnection between various nanostructures for a variety of applications and provide a simple device fabrication method to investigate transport properties on nanowires without complex patterning and etching processes.

• Applied Microscopy
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• 제30권4호
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• pp.337-345
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• 2000

사파이어 기판을 이용한 GaN 박막성장에서 완충층의 사용과 기판의 질화처리는 GaN 박막 내의 격자결함을 줄이는 가장 보편적인 방법이다. GaN박막의 초기 핵생성과 성장 거동을 향상시키기 위한 새로운 방법으로 사파이어 표면을 질소 활성화 이온빔으로 처리하는 방법이 시도되었다. 활성화 이온빔 처리의 결과 약 10nm두께의 비정질 $AlO_xN_y$ 층이 형성되었으며 GaN의 성장온도에서 부분적으로 결정화되어 계면 부위에 고립된 비정질 영역으로 존재하였다. 계면에 존재하는 비정질 층은 기판과 박막사이에서 발생하는 열응력을 효과적으로 감소시키는 역할이 가능하며 이를 확인하기 위하여 활성화 이온빔 처리에 의한 GaN박막 내의 격자변형량 차이를 비교하였다. GaN박막에서 얻어진 $[\bar{2}201]$ 정대축고차 Laue도형을 전산모사 도형과 비교하여 격자변형량을 측정하였다. 본 연구의 결과 활성화 이온빔 처리를 하지 않은 기판 위에 성장시킨 GaN박막의 격자변형량은 처리한 경우에 비해 6배 이상 높은 값을 가졌으며 따라서 활성화 이온빔 처리에 의해 GaN박막의 열응력은 크게 감소함을 확인하였다.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.371-375
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• 2019

Developing a thin-film transistor with characteristics such as a large area, high mobility, and high reliability are key elements required for the next generation on displays. In this paper, we have investigated the research trends related to improving the reliability of oxide-semiconductor-based thin-film transistors, which are the primary focus of study in the field of optical displays. It has been reported that thermal treatment in a high-pressure oxygen atmosphere reduces the threshold voltage shift from -7.1 V to -1.9 V under NBIS. Additionally, a device with a $SiO_2/Si_3N_4$ dual-structure has a lower threshold voltage (-0.82 V) under NBIS than a single-gate-insulator-based device (-11.6 V). The dual channel structure with different oxygen partial pressures was also confirmed to have a stable threshold voltage under NBIS. These can be considered for further study to improve the NBIS problem.

• Macromolecular Research
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• 제15권1호
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• pp.44-50
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• 2007

This study investigated the effect of ultrasound irradiation on the blend of poly(lactic acid) (PLA) and poly(butylene adipate-co-terephthalate) (PBAT). The blends of PLA/PBAT(50/50) (PBAT50) were prepared in a melt mixer with an ultrasonic device attached. Thermal, rheological, and mechanical properties, morphology, and biodegradability of the sonicated blends were analysed. The viscosity of the sonicated blends was increased by the ultrasound irradiation owing to the strong interaction. The morphology of the sonicated blends was significantly dependent on the duration o the ultrasound irradiation. For PBAT50, the phase size reduction was maximized when the blends were ultrasonically irradiated for 30 sec. At longer duration of ultrasound irradiation, the PBAT phase underwent flocculation. Measurement of the tensile properties showed an increased breakage tensile stress and an enhanced Young's modulus when the blends were properly irradiated. This improvement was ascribed to better adhesion between the PLA matrix and the PBAT domain and to better dispersion of the PBAT phase. However, the tensile properties were maximized after excessive energy irradiation, which was ascribed to an emulsifying effect leading to coalescence of the PBAT phase. Impact strength was increased to reach a peak with the ultrasound irradiation, and was higher than the untreated sample for all sonicated samples due to the difference of failure mechanism between the tensile test and the impact test.

• 전기학회논문지
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• 제60권10호
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• pp.1888-1894
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• 2011

In this study, large-current (75 - 400 A), high-voltage (500 - 1000 $V_{rms}$), reliable capacitors with capacitances (C) of 100 - 1000 nF were developed for energy storage facility applications. Mica was used as the dielectric of the capacitors. In order to form a parallel stack of a capacitor element, 50 ${\mu}m$ thick mica sheets with a size of $30mm{\times}35mm$ were used with lead foils for the plate lead type of mica capacitors (HCM-L), while the same sizes of mica sheets coated by Ag paste were employed with lead foils for the parallel plate terminal type (HCM-C). The developed capacitors exhibited well behaviored device characteristics which meet the requirements of the capacitors. The developed capacitors also showed excellent characteristics for thermal shock test. The stability characteristics of developed capacitors for large current stress was superior to those measured for the capacitors prepared recently by CDETm.