• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.385-390
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• 2010

We studied the optical characteristics of ZnO:Al and $Al_2O_3$ coated ZnO nanorods. When ZnO:Al is deposited around the undoped ZnO nanorods, thermal diffusion of Al into ZnO gives rise to decrease the binding energy of neutral donor bound exciton whereas an insulating Al2O3 is coated around ZnO, we found that semiconducor-insulator interface states play an important role in optical quenching.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.541-541
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• 2012

InP quantum dots capped by myristic acid (InP-MA QDs) were synthesized by a typical hot injection method using MA as stablizing agent. The current density across the InP-MA QDs thin film which was fabricated by spin-coating method is about $10^{-4}A/cm^2$ at the electric field of 0.1 MV/cm from I-V measurement on a metal-insulator-metal (MIM) device. The low conductivity of the InP-MA QDs thin film is interpreted as due to the long interdistances among the dots governed by the MA molecules. Therefore, replacing the MA with thioacetic acid (TAA) by biphasic ligand exchange was conducted in order to obtain TAA capped InP QDs (InP-TAA). InP-TAA QDs were designed due to: 1) the TAA is very short molecule; 2) the thiolate groups on the surface of the InP-TAA QDs are expected to undergo condensation reaction upon thermal annealing which connects the QDs within the QD thin film through a very short linker -S-; and 3) TAA provides better passivation to the QDs both in the solution and thin film states which minimizing the effect of surface trapping states.

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.1-6
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• 2006

We fabricated Si nano-wire MOSFET by using the conventional photolithography with a $1.5{\mu}m$ resolution. Si nano-wire was fabricated by using reactive ion etching (RIE), anisotropic wet etching and thermal oxidation on a silicon-on-insulator (SOI) substrate, and its width is 30 nm. Logarithmic circuit consisting of a NMOSFET and Si nano-wire MOSFET has been constructed for application to high-sensitivity image sensor. Its sensitivity was 1.12 mV/lux. The output voltage swing was 1.386 V.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.187-190
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• 1987

This paper is for the charge storage effect and C-V characteristics of MIS type diode which is the basic structural unit of charge-coupled device after growing the $Pb_{1-x}Sn_xTe$ crystal. $Pb_{1-x}Sn_xTe$ singlecrystal dbtained from the horizental furnace using Bridgman method. To judge whether the grown singlecrystal is suitable for specimen or not, it was investigated by X-ray diffraction analysis, thermogravimetry and differential thermal analysis. The C-V characteristics of the specimen caused to anodic oxidation was the best when the insulator film's depth was 250[$\AA$]. Measuring the C-V characteristics aftermanufacturing MIS type diode resulted that the whole capacitance was the largest when the supply voltage was low, 0.3[V] and the capacitance also varied according to the variance frequence when the supply voltage is over 0.5[V]. From the above result, even if the supply voltage is low, the $Pb_{1-x}Sn_xTe$ also have a good charge storage effect.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.641-647
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• 1999

The paper provides the results of microstructure analysis and dielectricproperties of porcelain suspension insulators. The evaluation of characteristics was also made as a function of the manufacturers and fabricated years for the experimental specimens which had been used in real distribution lines. Even though the series A contained higher alumina contents than the series B, the densification of series A was lower than that of series B, resulting from much porosity. The microstructure investigation confirmed that series A had much porosity than series B. The series A contained quartz $(SiO_2),\; mullite\; (Al_6Si_2O_{13}),\; corundum(Al_2O_3),\; and cristobalite\; (SiO_2)$ phases. However, the series B had no cristobalite phase which had very high thermal expansion coefficient. Also, the tan$\delta$of series A was more abruptly increased than that of series B as increasing temperature. The elevated temperature may make much expansion of cristobalite crystal than other crystals, resulting in crack and puncture inside cap during the summer days.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.236-239
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• 2002

Surface states of silicone polymer treated by plasma were investigated by the analysis by x-ray photoelectron spectroscopy (XPS) and surface voltage decay. Plasma treatment causes the silica-like oxidative layer, which is confirmed with XPS, and lowers surface resistivity with increasing the plasma treatment time. Using the decay time constant of surface voltage, the calculated surface resistivity was compared with the value directly measured by a voltage-current method. A good agreement between two methods was obtained. In addition, we estimated the thermal activation energy for surface conduction, Based on our results, we could understand the relationship between surface chemical states and surface electrical properties.

• Journal of Magnetics
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• v.21 no.1
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• pp.57-60
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• 2016

Non Destructive Testing (NDT) methods that are capable of detecting the wall thinning and defects through insulation and cladding sheets are necessary. In this study we developed a Pulsed Eddy Current (PEC) system to detect wall thinning of ferro magnetic steel pipes covered with 95 mm thick fiber glass thermal insulator and shielded with aluminum plate of thickness 0.4 mm. In order to confirm the thickness change due to wall thinning, two different sensors, a hall sensor and a search coil sensor were used as a detecting element. In both the cases, the experimental data indicates a considerable change in the detected pulse corresponding to the change in sample thickness. The thickness of the tube was made to change such as 2.5 mm, 5 mm and 8 mm from the inner surface to simulate wall thinning. Fast Fourier Transform (FFT) was calculated using window approach and the results were summarized which shows a clear identification of thickness change in the test specimen by comparing the magnitude spectra.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1216-1219
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• 1994

A reflection type SEED from LP-MOCVD grown InGaAs/GaAs ESQW structures, with 5% In fraction, has been fabricated and its basic characteristics were investigated. Its intrinsic region consists of 50 pairs of alternating $100{\AA}$ $In_{0.05}Ga_{0.95}As$ barrier and $100{\AA}$ GaAs layers. And a multilayer reflector stack of $Al_{0.12}Ga_{0.88}As(641{\AA})-/AlAs(774{\AA})$ was vertically integrated below the p-i-n structures. The device processing includes the mesa etching, insulator deposition, indium metallization, and thermal alloy for Ohmic contact. Photocurrent spectrum measurement showed the exciton absorption peak at 905nm and availability as a optical switching device. This device showed a contrast ratio of 2:1 by the reflectance spectrum measurement.

• Journal of Electrical Engineering and Technology
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• v.8 no.2
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• pp.345-353
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• 2013

This paper discusses the experimental results in an effort to understand the tracking and erosion resistance of the micro and nano size $Al_2O_3$ filled silicone rubber (SIR) material which has been studied under the AC voltages, with ammonium chloride as a contaminant, as per IEC 60587 test procedures. The characteristic changes in the tracking resistance of the micro and nano size filled specimens were analyzed through leakage current measurement and the eroded masses were used to evaluate the relative erosion and tracking resistance of the composites. The fundamental, third and fifth harmonic of the leakage current during the tracking study were analyzed using moving average current technique. It was observed that the harmonic components of leakage current show good correlation with the tracking and erosion resistance of the material. The thermogravimetry-derivative thermo gravimetric (TG-DTG) studies were performed to understand the thermal degradation of the composites. The physical and chemical studies were carried out by using scanning electron microscope (SEM), Energy Dispersive X-ray analysis (EDAX) and Fourier Transform Infra-red (FTIR) Spectroscopy. The obtained result indicated that the performance of nano filled SIR was better than the micro filled SIR material when the % wt. of filler increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.391-394
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• 1998

Electroluminescence is the light emission obtained by an electrical excitation energy passing through a phosphor under an applied high electrical field. EL are paid much attention on flat panel display as a backlight and indicator, which are divided into ACPRL(alternating-current powder electroluminescent) and ACTFEL(alternating-current powder electroluminescent). In this paper, Electric and emission properties on ACPEL are investigated based on ZnS:Cu phosphor. The basic structure on this is ITO glass/phosphor/insulator/ backelectrode, CR-M which has high efficiency on thermal properties and dielectric Properties was introduced and BaTiO$_3$ as a insulating layer in order to increase app1ied electric field on phosphor. Changing on Dielectric and emission Properties was caused by a different viscosity of binder which filled on space between phosphor particle. 60cd/$m^2$ under 60V, 2kHz sinusoidal was gotten from ACPELD prepared in this work.