• Title/Summary/Keyword: thermal insulator

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A Study on Effect of Scale Formation in Water Jacket on Thermal Durability in LPG Engine (엔진 물통로 내부 벽면 스케일 축적이 LPG 엔진의 열적 내구성에 미치는 영향에 대한 연구)

  • 류택용;신승용;최재권
    • Transactions of the Korean Society of Automotive Engineers
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    • v.9 no.3
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    • pp.42-50
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    • 2001
  • In this paper, the effects of scale formation in engine water jacket upon the thermal durability of engine itself and its component parts were studied. To understand the effect of quality of water, a full load engine endurance test for 50 hours was carried out with not-treated underground water. The followings were found through the tested engine inspection after the endurance test; 1-2 mm thick scale formation in the engine water jacket, valve seat wear, piston top land scuffing, piston pin stick, and cylinder bore scuffing in siamese area. In order to understand the causes of above test results, the heat rejection rate to coolant, the metal surface temperature of combustion chamber, and the oil and exhaust gas temperatures were measured and analyzed. The scale formed in the engine water jacket played a role as thermal insulator. The scale formed in the engine reduced the heat rejection rate to coolant and it caused to increase the metal surface temperature. The reduced heat rejection rate to coolant increased the heat rejection rate to oil and exhaust gas and increased the oil and exhaust gas temperature. Also, the reasons of valve seat wear, piston top land scuffing and cylinder bore scuffing, and piston pin stick quantitatively analyzed in this paper.

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Breakdown Characteristics of Liquid Nitrogen Induced by Quench (Quench에 의해 유도되는 액체 $N_2$의 절연파괴 특성)

  • Kim, Yeong-Seok;Jeong, Jong-Man;Gwak, Min-Hwan;Jeong, Sun-Yong;Kim, Sang-Hyeon
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.1
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    • pp.23-28
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    • 1999
  • Electrical breakdown characteristics of liquid nitrogen($LN_2$) used as both coolant and insulator for high $T_c$ superconductor system are very important. This paper presents dynamic breakdown characteristics fo $LN_2$ by quench phenomena of thermal bubble under high electric field. Experimental results revealed dynamic breakdown voltage fell down drastically compared with the static breakdown voltage without the quench. Because of increasing heat power, bubble size becomes big and breakdown voltage decreases. The breakdown voltage mechanism of $LN_2$ depends on thermal bubble effect. In the Electrode arrangement, electrical breakdown voltage of horizontal arrangement appears lower than that of vertical arrangement. Also, we observed the behavior of thermal bubbles in $LN_2$ which were generated after quench using camera.

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Measurement and Verification of Thermal Conductivity of Multilayer Thin Dielectric Film via Differential 3$\omega$ Method (차등 3$\omega$ 기법을 이용한 다층 유전체 박막의 열전도도 측정 및 검증)

  • Shin Sang-Woo;Cho Han-Na;Cho Hyung-Hee
    • 정보저장시스템학회:학술대회논문집
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    • 2005.10a
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    • pp.254-259
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    • 2005
  • In this study, measurement of thermal conductivity of multilayer thin dielectric film has been conducted via differential 3$\omega$ method. Also, verification of differential 3$\omega$ method has been accomplished with various proposed criteria. The target film for measurement is 300 nm silicon dioxide and this thin film is covered with various thicknesses of upper protective layer. The upper protective layer is inserted between the target film and the heater line for purpose of electrical insulator or anti-oxidation barrier since the target film may be a good electrical conductor or a well-oxidizing material. However, the verification of differential 3$\omega$ method has not been conducted. Thus we have shown that the measurement of thermal conductivity of thin films with upper protective layer via differential 3$\omega$ method is verified to be reliable as long as the proposed preconditions are satisfied. Experimental results show that the experimental errors tend to increase with aspect ratio between upper protective layer thickness and width of the heater line due to heat spreading effect.

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Numerical Analysis for Thermal Response of Silica Phenolic in Solid Rocket Motor (고체 로켓 추진기관에서 실리카/페놀릭 열반응 해석 연구)

  • Seo, Sangkyu;Hahm, Heecheol;Kang, Yoongoo
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2017.05a
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    • pp.521-528
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    • 2017
  • In this paper, the numerical analysis for heat conduction of silica/phenolic composite material, which is used for solid rocket nozzle liner or insulator, was conducted. 1-D Finite Difference Method for the analysis of silica/phenolic during the firing of solid rocket motor was used to calculate the heat conduction considering the surface ablation and the thermal decomposition. The boundary condition at the nozzle wall took into account the convective heat transfer, which was obtained by integration equation. The numerical results of the surface ablation and char depth were compared with the results of test motor that is TPEM-10. It was found that the result of calculation is favorably agreed with the thermal response of test motor.

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Study of Low Temperature Solution-Processed Al2O3 Gate Insulator by DUV and Thermal Hybrid Treatment (DUV와 열의 하이브리드 저온 용액공정에 의해 형성된 Al2O3 게이트 절연막 연구)

  • Jang, Hyun Gyu;Kim, Won Keun;Oh, Min Suk;Kwon, Soon-Hyung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.4
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    • pp.286-290
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    • 2020
  • The formation of inorganic thin films in low-temperature solution processes is necessary for a wide range of commercial applications of organic electronic devices. Aluminum oxide thin films can be utilized as barrier films that prevent the deterioration of an electronic device due to moisture and oxygen in the air. In addition, they can be used as the gate insulating layers of a thin film transistor. In this study, aluminum oxide thin film were formed using two methods simultaneously, a thermal process and the DUV process, and the properties of the thin films were compared. The result of converting aluminum nitrate hydrate to aluminum oxide through a hybrid process using a thermal treatment and DUV was confirmed by XPS measurements. A film-based a-IGZO TFT was fabricated using the formed inorganic thin film as a gate insulating film to confirm its properties.

Measurement and Verification of Thermal Conductivity of Multilayer Thin Dielectric Film via Differential $3\omega$ Method (차등 $3\omega$ 기법을 이용한 다층 유전체 박막의 열전도도 측정 및 검증)

  • Shin, Sang-Woo;Cho, Han-Na;Cho, Hyung-Hee
    • Transactions of the Society of Information Storage Systems
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    • v.2 no.1
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    • pp.85-90
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    • 2006
  • In this study, measurement of thermal conductivity of multilayer thin dielectric film has been conducted via differential $3\omega$ method. Also, verification of differential $3\omega$ method has been accomplished with various proposed criteria. The target film for the measurement is 300 nm thick silicon dioxide which is covered with upper protective layer of various thicknesses. The upper protective layer is inserted between the target film and the heater line for purpose of electrical insulator or anti-oxidation barrier since the target film may be a good electrical conductor or a well-oxidizing material. Since the verification of differential $3\omega$ method has not been conducted yet, we have shown that the measurement of thermal conductivity of thin films with upper protective layer via differential $3\omega$ method is verified to be reliable as long as the proposed preconditions of the samples are satisfied. Experimental results show that the experimental errors tend to increase with aspect ratio between thickness of the upper protective layer and width of the heater line due to heat spreading effect.

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Experimental research about thermal insulation performance of various powder insulation methods (다양한 파우더 충전 단열 방법의 단열 성능에 대한 실험적 연구)

  • Kim, H.S.;Jeong, S.;Jeong, S.H.
    • Progress in Superconductivity and Cryogenics
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    • v.12 no.3
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    • pp.49-54
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    • 2010
  • This paper presents apparent thermal conductivity of various powder at different vacuum levels for cryogenic insulation. Four kinds of powder insulator are examined by using boil-off calorimetry at pressure range from 50 Torr to 3 mTorr. The first material is perlite which is widely used in cryogenic application. Microsphere is the second one that is recently proposed as a replacement powder for liquid hydrogen storage tanks. It is a hollow sphere made of silica with the diameter in the order of 10 to $100{\mu}m$. Popped rice and polystyrene beads are also selected as candidates for powder insulation even though they are polymers. With their porous elliptic and spherical configuration and light density, they demonstrate fairly good thermal insulation performance at pressure range from 50 Torr to 3 mTorr. According to the experimental investigation in this paper, microsphere and polystyrene beads possess promising insulation characteristic as powder insulators and further study is desired.

Mechanical Strength Calculation of HVDC Valve Hall (HVDC시스템 밸브홀의 기계적 강도 계산)

  • Kim, Chan-Ki;Lee, Seong-Do;Kang, Ji-Won;Yoon, Yong-Beum
    • The Transactions of the Korean Institute of Power Electronics
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    • v.21 no.5
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    • pp.442-448
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    • 2016
  • This paper presents electromagnetic force effect of the conductor and insulator in the HVDC valve hall. This paper is based on IEC 60865, which is applicable to the mechanical and thermal effects of short-circuit currents. The paper contains procedures for the calculation of the electromagnetic effect on HVDC conductors and flexible conductors, as well as the thermal effect on HVDC conductors. The results are applied to the Godeok -Dangjin HVDC system.

Fabrication of SiCOI Structures for MEMS Applications in Harsh Environments (극한 환경 MEMS용 SiCOI 구조 제작)

  • Chung, Gwiy-Sang;Chung, Yun-Sik;Ryu, Ji-Goo
    • Journal of Sensor Science and Technology
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    • v.13 no.4
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    • pp.264-269
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    • 2004
  • This paper describes on an advanced technology of 3C-SiC/Si(100) wafer direct bonding using PECVD oxide to intermediate layer for SiCOI(SiC-on-Insulator) structure because it has an attractive characteristics such as a lower thermal stress, deposition temperature, more quick deposition rate and higher bonding strength than common used poly-Si and thermal oxide. The PECVD oxide was characterized by ATR-FTIR. The bonding strength with variation of HF pre treatment condition was measured by tensile strength measurement system. After etch-back using TMAH solution, roughness of 3CSiC surface crystallinity and bonded interface was measured and analyzed by AFM, XRD, and SEM respectively.

Rapid Thermal Annealing of Silicon on Insulator (SOI) with a W-Halogen Lamp (텅스텐 할로겐 램프에 의한 절연층 상의 실리콘)

  • 김춘근;김용태;민석기
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.8
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    • pp.950-958
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    • 1988
  • We have implemented a RTA system using W-halogen lamps and tried to recrystallize the phosphorus ion implanted amorphous silicon on insultor (SOI) taking advantages of seeding window. The purpose of this study is to investigate the possibility of a typical crystalline orientation occurred during the solidifying process of molten amorphous silicon layer. Experimental results show that several twin boundaries are found on the seeding window region after annealing for 15 sec at 1040\ulcorner. These twin boundaries represent that the recrystallization is partialy possible and when the annealing is done at 1150\ulcorner, (100) etch pits with <110> facets are found on the solidified amorphous silicon layer. Consequently, Hall mobility of recrystallized silicon film is measured and the thermal behavior of grain boundary is also observed by SEM.

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