• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.9
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• pp.8-13
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• 2008

Noise in homogeneous extrinsic semiconductor samples is calculated due to distributed diffusion noise sources. As the length of the device shrinks at a fixed bias voltage, the ac-wise short-circuit noise current shows excess noise as well as thermal noise spectra. This excess noise behaves like a full shot noise when the channel length becomes very small compared with the extrinsic Debye length. For the first time, the analytic formula of the excess noise in extrinsic semiconductors from velocity-fluctuation noise sources is given for finite frequencies. This formula shows the interplay between transit time, dielectric relaxation time, and velocity relaxation time in determining the terminal noise current as well as the carrier density fluctuation. As frequency increases, the power spectral density of the excess noise rolls off. This formula sheds light on noise in nanoscale MOSFETs where quasi-ballistic transport plays an important role in carrier transport and noise.

• Journal of the Korean Magnetics Society
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• v.8 no.1
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• pp.21-26
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• 1998

The temperature dependence of the magnetoimpedance (MI) effect is important both for scientific study and for thermal stability of MI sensor. We have performed the measurement of MI effect in amorphous $Co_{66}Fe_1Ni_1B_{14}Si_{15}$ (Metglas 2714 A) ribbon from a cryogenic chamber where the temperature of the sample can vary from 10 K to 300 K. The ac current was fixed at 10 mA for all measured frequencies ranging from 100 KHz to 10 MHz. The magnetoimpedance ratio (MIR) was revealed the drastic increment as a function of MIR (T) = MIR (0) exp(cT$^2$) where c is a constant. The measured MIR values at room temperature are usually 2-3 times larger than the data measured at 10 K for all measured frequencies. However, the shapes of the MIR curves are remained. This result shows the potential application of the MI effect for a temperature sensor. The frequency dependence of MIR has shown the typical tendency where the maximum values of MIR are increasing ans also the shapes of MIR curves are getting broader as the measured frequency increases.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.57.2-57.2
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• 2011

Dye-sensitized solar cells (DSSC) have recently been developed as a cost-effective photovoltaic system due to their low-cost materials and facile processing. The production of DSSC involves chemical and thermal processes but no vacuum is involved. Therefore, DSSC can be fabricated without using expensive equipment. The use of dyes and nanocrystalline $TiO_2$ is one of the most promising approaches to realize both high performance and low cost. The efficiency of the DSSC changes consequently in the particle size, morphology, crystallization and surface state of the $TiO_2$. Nanocrystalline $TiO_2$ materials have been widely used as a photo catalyst and an electron collector in DSSC. Front electrode in DSSC are required to have an extremely high porosity and surface area such that the dyes can be sufficiently adsorbed and be electronically interconnected, resulting in the efficient generation of photocurrent within cells. In this study, DSSC were fabricated by an screen printing for the $TiO_2$ thin film. $TiO_2$ nanoparticles characterized by X-ray diffractometer (XRD) and scanning electron microscope (SEM) and scanning auger microscopy (SAM) and zeta potential and electrochemical impedance spectroscopy(EIS).In addition, DSSC module was modeled and simulated using the SILVACO TCAD software program. Improve the efficiency of DSSC, the effect of $TiO_2$ thin film thickness and $TiO_2$ nanoparticle size was investigated by SILVACO TCAD software program.

• Journal of Biomedical Engineering Research
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• v.20 no.2
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• pp.205-212
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• 1999

When we want to observe and record a patient's EEG in an operating room, the operation of electrosurgical unit(ESU) causes undesirable artifacts with high frequency and high voltage. These artifacts make the amplifiers of the conventional EEG system saturated and prevent the system from measuring the EEG signal. This paper describes a high-performance bipolar EEG amplifier for a CSA (compressed spectral array ) system with reduced ESU artifacts. The designed EEG amplifier uses a balanced filter to reduce the ESU artifacts, and isolates the power supply and the signal source of the preamplifier from the ground to cut off the current from the ESU to the amplifier ground. To cancel the common mode noise in high frequency, a high CMRR(common mode rejection ratio) diffferential amplifier is used. Since the developed bipolar EEG amplifier shows high gain, low noise, high CMRR, high input impedance, and low thermal drift, it is possible to observe and record more clean EEG signals in spite of ESU operation. Therefore the amplifier may be applicable to a high-fidelity CSA system.

• Journal of Electrochemical Science and Technology
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• v.8 no.2
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• pp.101-106
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• 2017

$Li_2SiO_3$ was used as a coating material to improve the electrochemical performance of $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$. $Li_2SiO_3$ is not only a stable oxide but also an ionic conductor and can, therefore, facilitate the movement of lithium ions at the cathode/electrolyte interface. The surface of the $Li_2SiO_3$-coated $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ was covered with island-type $Li_2SiO_3$ particles, and the coating process did not affect the structural integrity of the $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ powder. The $Li_2SiO_3$ coating improved the discharge capacity and rate capability; moreover, the $Li_2SiO_3$-coated electrodes showed reduced impedance values. The surface of the lithium-ion battery cathode is typically attacked by the HF-containing electrolyte, which forms an undesired surface layer that hinders the movement of lithium ions and electrons. However, the $Li_2SiO_3$ coating layer can prevent the undesired side reactions between the cathode surface and the electrolyte, thus enhancing the rate capability and discharge capacity. The thermal stability of $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ was also improved by the $Li_2SiO_3$ coating.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.510-515
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• 2016

Single-chamber solid oxide fuel cells (SC-SOFCs) consist of only one gas chamber, in which both the anode and the cathode are exposed to the same fuel-oxidant mixture. Thus, this configuration shows good thermal and mechanical resistance and allows rapid start-up and -down. In this study, the unit cell consisting of $La_{0.8}Sr_{0.2}MnO_3$ (cathode) / $Zr_{0.84}Y_{0.16}O_{2-x}$ (electrolyte) / $Ni-Zr_{0.84}Y_{0.16}O_{2-x}$ (anode) was fabricated and its electrochemical property was investigated as a function of temperature and the volume ratio of fuel and oxidant for SC-SOFCs. Impedance spectra were also investigated in order to figure out the electrical characteristics of the cell. As a result, the cell performance was governed by the polarization resistances of the electrodes. The cell exhibited an acceptable cell-performance of $86mW/cm^2$ at $800^{\circ}C$ and stable performance for 3 hs under 0.7 V.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.4
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• pp.335-344
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• 2004

A low phase noise EQM(Engineering Qualified Model) LO(Local Oscillator) has been developed for Ka-band satellite transponder. A VCDRO(Voltage Controlled Dielectric Resonator Oscillator) is also designed using a high impedance inverter coupled with dielectric resonator to improve the phase noise performances out of the loop bandwidth. The mechanical analysis fur housing and the thermal analysis fur circuit board are achieved. This EQM LO is applied to Ka-band satellite transponder of EQM level after environmental experiments for space application. The LO has the harmonic suppression characteristics above 52 ㏈c and requires low power consumption under 1.3 watts. The phase noise characteristics are exhibited as -101.33 ㏈c/㎐ at 10 ㎑ offset frequency and -114.33 ㏈c/㎐ at 100 ㎑ offset frequency, with the output power of 14.0 ㏈m${\pm}$0.17 ㏈ over the temperature range of -15∼＋65$^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.56.1-56.1
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• 2009

The intermediate operating temperature of solid oxide fuel cells (IT-SOFCs) have achieved considerable importance in the area of power fabrication. This is because to improve materials compatibility, their long-term stability and cost saving potential. However, to conserve rational cell performance at reduced-temperature regime, cathode performance should be obtained without negotiating the internal resistance and the electrode kinetics of the cell. Recently, double perovskite structure cathodes have been studied with great attention as a potential material for IT-SOFCs. In this study, double-perovskite structured cathodes of $GdBaCoCuO_{5+\delta}$, $GdBaCo_{2/3}Cu_{2/3}Fe_{2/3}O_{5+\delta}$ compositions and $(1-x)GdBaCo_2O_{5+\delta}+xCe_{0.9}Gd_{0.1}O_{1.95}$ (x = 10, 20, 30 and 40 wt.%) composites were evaluated as the cathode for intermediate temperature solid oxide fuel cells(IT-SOFCs). Electrical conductivity of the cathodes were measured by DC 4-probe method, and the thermal expansion coefficient of each sample was measured up to $900^{\circ}C$ by a dilatometer study. Area specific resistances(ASR) of the $GdBaCo_{2/3}Cu_{2/3}Fe_{2/3}O_{5+\delta}$ cathode and 70 wt.% $GdBaCo_2O5+\delta$ + 30wt.% Ce0.9Gd0.1O1.95 composite cathode on CGO electrolyte substrate were analyzed using AC 3-probe impedance study. The obtained results demonstrate that double perovskite-based compositions are promising cathode materials for IT-SOFCs.

• Membrane Journal
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• v.15 no.4
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• pp.349-354
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• 2005

YSZ (yttria-stabilized zirconia) determined with an electrolyte that analyzed thermal stability along sintering condition and an electric characteristic. As sintering temperature increases by SEM, grain grows and it showed that pore decreases relatively. and confirmed effect by grain size. It evaluated that particle internal resistance and electric performance by resistance in an electrolyte and electricity conductivity measurement through ac impedance measurement in temperature of $800\~1000^{\circ}C$ in 2-probe method In order to recognize an electric characteristic. In dry process and wet process, density was each 6.13, 6.25 $g/cm^3$ and the relative density was each 98, 99$\%$ when sintering condition is $1400^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.292-295
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• 2004

The SIT was introduced by Nishizawa. in 1972. When compared with high-voltage, power bipolar junction transistors, SITs have several advantages as power switching devices. They have a higher input impedance than do bipolar transistors and a negative temperature coefficient for the drain current that prevents thermal runaway, thus allowing the coupling of many devices in parallel to increase the current handling capability. Furthermore, the SIT is majority carrier device with a higher inherent switching speed because of the absence of minority carrier recombination, which limits the speed of bipolar transistors. This also eliminates the stringent lifetime control requirements that are essential during the fabrication of high-speed bipolar transistors. This results in a much larger safe operating area(SOA) in comparison to bipolar transistors. In this paper, vertical SIT structures are proposed to improve their electrical characteristics including the blocking voltage. Besides, the two dimensional numerical simulations were carried out using ISE-TCAD to verify the validity of the device and examine the electrical characteristics. A trench gate region oxide power SIT device is proposed to improve forward blocking characteristics. The proposed devices have superior electrical characteristics when compared to conventional device. Consequently, the fabrication of trench oxide power SIT with superior stability and electrical characteristics is simplified.