• 한국표면공학회지
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• 제40권5호
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• pp.214-218
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• 2007

The objective of this study is to evaluate the diffusion behavior of Al and Si from a coatings in the microstucture of Fe-Si steel. Steel samples deposited with Al-Si alloy are prepared by ion plating process, followed by annealing treatments for diffusion at $1050^{\circ}C$. Several intermetallic phases are found in the coatings and they are identified as Fe-Al and an orderd Fe-Si compounds. Series of different concentration profiles through the sample have been obtained and Si content reaches about 5 wt% in case of 90 minutes of diffusion time.

• 한국광학회:학술대회논문집
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• 한국광학회 2001년도 하계학술발표회
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• pp.72-73
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• 2001

• 한국광학회:학술대회논문집
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• 한국광학회 1996년도 Advance Program of 13th optics andquantum Electronics conference, 1996제13 회 광학 및 양자전자 학술 발표회 논문 요약집
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• pp.70-70
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• 1996

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 추계학술발표강연 및 논문개요집
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• pp.124-124
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• 1998

• Bulletin of the Korean Chemical Society
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• 제17권3호
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• pp.217-219
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• 1996

• Bulletin of the Korean Chemical Society
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• 제33권8호
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• pp.2483-2488
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• 2012

The X-ray line broadening technique was used to calculate the grain size of MgO at 1023, 1123, 1223 K respectively either in $CO_2$ or during the thermal decomposition of magnesites in air as well as in vacuum. By referring to the conventional grain growth equation, $D^n=kt$, the activation energy and pre-exponential factor for the process in air are gained as 125.8 kJ/mol and $1.56{\times}10^8\;nm^4/s$, respectively. Ranman spectroscopy was employed to study the surface structure of MgO obtained during calcination of magnesite, by which the mechanism of grain growth was analyzed and discussed. It is suggested that a kind of highly reactive MgO is produced during the thermal decomposition of magnesites, which is exactly the reason why the activation energy of the grain growth during the thermal decomposition of magnesite is lower than that of bulk diffusion or surface diffusion.

• Bulletin of the Korean Chemical Society
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• 제28권10호
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• pp.1689-1696
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• 2007

Equilibrium molecular dynamics (EMD) simulations are used to evaluate the transport coefficients of argonkrypton mixtures at two liquid states (state A: 94.4 K and 1 atm; state B: 135 K and 39.5 atm) via modified Green-Kubo formulas. The composition dependency of the volume at state A obeys close to the linear model for ideal liquid mixture, while that at state B differs from the linear model probably due to the high pressure. The radial distribution functions for the Ar-Kr mixture (x = 2/3) show a mixing effect: the first peak of g11 is higher than that of g(r) for pure Ar and the first peak of g22 is lower than that of g(r) for pure Kr. An exponential model of engineering correlation for diffusion coefficient (D) and shear viscosity (η) is superior to the simple linear model for ideal liquid mixtures. All three components of thermal conductivity (λpm, λtm, and λti) at state A and hence the total thermal conductivity decrease with the increase of x. At state B, the change in λtm is dominant over those in λpm and λti, and hence the total thermal conductivity decrease with the increase of x.

• 대한기계학회논문집B
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• 제28권4호
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• pp.371-381
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• 2004

Numerical simulation of $CO_2$ addition effects to fuel and oxidizer streams on flame structure has been conducted with detailed chemistry in H$_2$-O$_2$ diffusion flames of a counterflow configuration. An artificial species, which displaces added $CO_2$ in the fuel- and oxidizer-sides and has the same thermochemical, transport, and radiation properties to that of added $CO_2$, is introduced to extract pure chemical effects in flame structure. Chemical effects due to thermal dissociation of added $CO_2$ causes the reduction flame temperature in addition to some thermal effects. The reason why flame temperature due to chemical effects is larger in cases of $CO_2$ addition to oxidizer stream is well explained though a defined characteristic strain rate. The produced CO is responsible for the reaction, $CO_2$＋H=CO＋OH and takes its origin from chemical effects due to thermal dissociation. It is also found that the behavior of produced CO mole fraction is closely related to added $CO_2$ mole fraction, maximum H mole fraction and its position, and maximum flame temperature and its position.

• 한국전기전자재료학회논문지
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• 제26권5호
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• pp.410-414
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• 2013

Rapid thermal processing (RTP) abruptly decreases the time required to perform solar cell processes. RTP were used to form emitter of crystalline silicon solar cells. The emitter sheet resistance is studied as a function of time and temperature. The objective of this study is reduction of doping process time with same performance. Emitter difRapid thermal dfusion was carried out by using a spin on doping and a RTP. iffusion was performed in the temperature range of $700{\sim}750^{\circ}C$ for 1m 30s~15 m. Thermal budgets yielded a $50{\Omega}/sq$ emitter using a P509 source. To reduce process time and get high efficiency, rapid thermal diffusion by IR lamp was employed in air atmosphere at $700^{\circ}C$ for 15 m.

• 한국전기전자재료학회논문지
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• 제20권6호
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• pp.546-549
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• 2007

As a rule, high temperature superconducting coated conductors have multi-layered buffers consisting of seed, diffusion barrier and cap layers. Multi-buffer layer deposition requires longer fabrication time. This is one of main reasons which increases fabrication cost. Thus, single buffer layer deposition seems to be important for practical coated conductor process. In this study, a single layered buffer deposition of $CeO_2$ for low cost coated conductors has been tried using thermal evaporation technique. 100 nm-thick $CeO_2$ layers deposited by thermal evaporation were found to act as a diffusion layer. $1\;{\mu}m-thick$ SmBCO superconducting layers were deposited by thermal co-evaporation on the $CeO_2$ buffered Ni-5%W substrate. Critical current of 90 A/cm was obtained for the SmBCO coated conductors.