• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.975-976
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• 2007

Thermal and mechanical stresses, caused by repetitive start and stop and load fluctuation during long time operation, on winding stator bars are one of the main causes for electrical degradation of insulating materials. To understand the degradation process, we manufactured bar specimens with the same processes that make generator winding stator bars and the specimens were subjected to various degrees of thermal cycling. Measurements of the insulation properties, such as dissipation factor, tip-up and partial discharge, for un-aged specimens and for specimens aged by thermal cycling at 50, 100, 250, 500 and 1000 thermal cycles were performed. Finally all specimens were tested to obtain electrical breakdown voltages. In this paper we present the data and electrical degradation analysis results obtained during this program.

• Journal of the Korean Society of Safety
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• v.22 no.5
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• pp.27-32
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• 2007

We investigated the damage of the TTL ICs which manufactured five different technologies by artificial microwave. The artificial microwave was rated at a microwave output from 0 to 1000W, at a frequency of 2.45GHz. The microwave power was extracted into a standard rectangular waveguide(WR-340) and TTL ICs were located into the waveguide. TTL ICs were damaged two types. One is breakdown which means no physical damage is done to the system and after a reset the system is going back into function. The other is destruction which means a physical damage of the system so that the system will not recover without a hardware repair. TTL SN74S08N and SN74ALS08N devices get a breakdown and destruction occurred but TTL SN74LS08N, SN74AS08N and 74F08N devices get a destruction occurred. Also destructed TTL ICs were removed their surface and a chip conditions were analyzed by SEM. The SEM analysis of the damaged devices showed onchipwire and bondwire destruction like melting due to thermal effect. The tested results expect to be applied to the fundamental data which interprets the combination mechanism of the semiconductors from artificial microwave environment.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.4
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• pp.73-80
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• 2013

Breakdown characteristics of air in the vertical arrangement of line conductor and plane electrode in case of combustion flame on the plane electrode are examined by the application of AC. and DC voltages to the gap. In order to investigate the effect of paraffin flame on the breakdown characteristics of air, flashover voltages are measured according to the variation of the gap length and the horizontal distance between the flame and the line conductor. As the result of the experiment, flashover voltages are substantially lowered down to 29.8% in case of the AC voltage, and 16.1% in case of the negative DC voltage, when in the presence of the flame. from 100% when in the absence of flame. Flashover voltages of air in the range of smaller than 3㎝ at the horizontal distance are increased in the proportion of the gap length and the horizontal distance in case of both AC and negative DC voltages. But before the flashover occurs, the flame is extinguished by such corona wind that is produced from the line conductor when the gap length and the horizontal distance reach to a certain degree. The effect of relative air density and the phenomenon of thermal ionization are analysed as the reduction factors of flashover voltages, due to high temperature of the flame.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.299-302
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• 2001

In this study, we are studied the electrical conduction and dielectric breakdown properties of insulating varnish. In order to analyze the molecular structure and physical properties of insulating varnishs, FT-lR was used. As the result, it can be confirmed that the peak of alcoholic group appeared in wavenumbers 3452[cm$\^$-1], the peak of =CH appeared in 3080[cm$\^$-1] and the peak of -CH appeared in 2919[cm$\^$-1] respectively. The following results were obtained from electrical properties of insulating varnish. The amplitude of current density was decreased by thickness increasing and the current density was effected by the thermal energy from external due to temperature increasing. In study temperature dependence of dielectric strength, the specimen of 10[$\mu\textrm{m}$] thickness was measurement from room temperature to 180[$^{\circ}C$]. It is confirmed that the temperature regions below 60[$^{\circ}C$] is due to electron avalanche breakdown and the temperature regions over 60[$^{\circ}C$] is due to free volume breakdown which makes electron movements easy.

• Journal of the Korean institute of surface engineering
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• v.57 no.1
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• pp.8-13
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• 2024

Anodizing of Al6061 alloy was conducted in two different electrolytes of 20% sulfuric acid and 8% sulfuric acid + 3 % oxalic acid solutions at a constant current or decreasing current density conditions, and its dielectric breakdown voltage was measured. The surface morphology of anodic oxide films was observed by TEM and thermal treatment was carried out at 400 ℃ for 2 h to evaluate the resistance of the anodic oxide films to crack initiation. The anodic oxide film formed in 8% sulfuric acid + 3 % oxalic acid solution showed higher dielectric breakdown voltage and better resistance to crack initiation at 400 ℃ than that formed in 20% sulfuric acid solution. The dielectric breakdown voltage increased 6 ~12% by applying decreasing current density comparing with a constant current density.

• Journal of computational fluids engineering
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• v.15 no.2
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• pp.28-34
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• 2010

Conductive and radiative thermal model configurations of an imager of a geostationary satellite are presented. A two-plane method is introduced for three dimensional conductive coupling which is not able to be treated by thin shell plate thermal modeling technique. Especially the two-plane method is applied to massive matters and PIP(Payload Interface Plate) in the imager model. Some massive matters in the thermal model are modified by adequate correction factors or equivalent thickness in order to obtain the numerical results of thermal modeling to be consistent with the analytic model. More detailed nodal breakdown is specially employed to the object which has the rapid temperature gradient expected by a rule of thumb. This detailed thermal model of the imager is supposed to be used for analyses and test predictions, and be correlated with the thermal vacuum test results before final in-flight predictions.

• Journal of Electrical Engineering and Technology
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• v.11 no.5
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• pp.1377-1382
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• 2016

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.321-325
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• 2020

Atmospheric environmental problems have a major impact on human health and lifestyle. In humans, inhalation of nitrogen oxides causes respiratory diseases, such as bronchitis. In this paper, thermal analysis of a gas sensor was carried out to design and fabricate a wearable nylon-yarn gas sensor for the detection of NO_x gas. In the thermal analysis method, the thermal diffusion process was analyzed while operating the sensors at 40 and 60℃ to secure a temperature range that does not cause thermal runaway due to temperature in the operating environment. Thermal diffusion analysis was performed using the COMSOL software. The thermal analysis results could be useful for analyzing gas adsorption and desorption, as well as the design of gas sensors. The thermal energy diffusion rate increased slightly from 10.05 to 10.1 K/mm as the sensor temperature increased from 40 to 60℃. It was concluded that the sensor could be operated in this temperature range without thermal breakdown.

• Proceedings of the Korean Reliability Society Conference
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• 2001.06a
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• pp.337-337
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• 2001

High voltage ceramic capacitors are widely applied in power electronic circuits, such as filters, snubbers, and resonant circuits, due to their excellent features of high voltage endurance and low aging. This paper presents a result of failure analysis and reliability evaluation for high voltage ceramic capacitors. The failure nodes and failure mechanisms were identified in order to understand the failure physics in a component. The causes of failure mechanisms for zero resistance phenomena under withstanding voltage test in high voltage ceramic capacitors molded by epoxy resin were studied by establishing an effective closed-loop failure analysis. Also, the condition for dielectric breakdown was investigated. Particular emphasis was placed on breakdown phenomena at the ceramic-epoxy interface. The validity of the results in this study was confirmed by the results of accelerated testing. Thermal shock test as well as pressure cooker test for high voltage ceramic capacitor mounted on a magnetron were implemented. Delamination between ceramic and epoxy, which, might cause electrical short in underlying circuitry, can occur during curing or thermal cycling. The results can be conveniently used to quickly identify defective lots, determine mean time to failure (MTTF) of each lot at the level of Inspection, and detect major changes in the vendors processes.

• Journal of Electrical Engineering and Technology
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• v.8 no.5
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• pp.1157-1162
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• 2013

We proposed AlGaN/GaN high-electron-mobility transistors (HEMTs) using thermal oxidation for NiOx passivation. Auger electron spectroscopy, secondary ion mass spectroscopy, and pulsed I-V were used to study oxidation features. The oxidation process diffused Ni and O into the AlGaN barrier and formed NiOx on the surface. The breakdown voltage of the proposed device was 1520 V while that of the conventional device was 300 V. The gate leakage current of the proposed device was 3.5 ${\mu}A/mm$ and that of the conventional device was 1116.7 ${\mu}A/mm$. The conventional device exhibited similar current in the gate-and-drain-pulsed I-V and its drain-pulsed counterpart. The gate-and-drain-pulsed current of the proposed device was about 56 % of the drain-pulsed current. This indicated that the oxidation process may form deep states having a low emission current, which then suppresses the leakage current. Our results suggest that the proposed process is suitable for achieving high breakdown voltages in the GaN-based devices.