• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.92-95
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• 1997

Because of the novel characteristics such as chemical stability, hardness, electrical resistivity and thermal conductivity, diamond-like carbon (DLC) film is a suitable material for the passivation layers. For this purpose, using the PECVD, DLC films were synthesized at room temperature. The adhesion and the hardness of the DLC films deposited on Si an SiO2 substrate were measured. The resistivity of 5.3$\times$$10^8$$\Omega$.cm was measured by automatic spreading resistance probe analysis method. The thermal conductivities of different DLC films were measured and compared with that of phospho silicate glass (PSG) film which is commonly used as passivation layers. The thermal conductivity of DLC film was improved by increasing hydrogen flow rate up to 90 sccm and was better than that of PSG film. The patterning techniques of the DLC film developed using the RIE and the lift-off method to form 5$\mu\textrm{m}$ line. Finally, the thermal characteristics of the power transistor with the DLC film as passiviation layer was analyzed.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.3
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• pp.88-95
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• 2015

The accelerated thermal aging of CSPE(Chloro Sulfonate Polyethylene) was carried out for 40.41, 121.22, 202.04 days, 16.82, 50.45, 84.09 days and 7.32, 21.96, 36.59 days at 100, 110, and $120^{\circ}C$, respectively, which are equivalent to 20, 60, 100 years of aging at $50^{\circ}C$. The permittivities and the apparent densities of the accelerated thermally aged CSPE samples are increased with accelerated thermal aging year but EAB(Elongation at Break) is decreased with that. The dielectric strength and the electric breakdown of the non-accelerated and accelerated thermally aged CSPE samples do not depend on accelerated thermal aging year and applied voltage rising time. density and EAB measures.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.68-77
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• 1995

Characteristics of electron cyclotron resonance (ECR) plasma thermal oxide grown at low-temperature have been investigated. The effects of several process parameters such as substrate temperature, microwave power, gas flow rate, and process pressure on the growth rate of the oxide have been also investigated. It was found that the plasma density, reactive ion species, is strongly related to the growth rate of ECR plasma oxied. It was also found that the plasma density increases with microwave power while it decreases with decreasing O2 flow rate. The oxidation time dependence of the oxide thichness showed parabolic characteristics. Considering ECR plasma thermal oxidation at low-temperature, the linear as well as parabolic rate constants calculated from fitting data by using the Deal-Grove model was very large in comparison with conventional thermal oxidation. The ECR plasma oxide grown on (100) crystalline-Si wafer exhibited good electrical characteristics which are comparable to those of thermal oxide: fixed oxide charge(N$_{ff}$)= 7${\times}10^{10}cm^{-2}$, interface state density(N$_{it}$)=4${\times}10^[10}cm^{-2}eV^{-1}$, and breakdown field > 8MV/cm.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.11-16
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• 2016

Silicon carbide (SiC) has received significant attention over the past decade because of its high-voltage, high-frequency and high-thermal reliability in devices compared to silicon. Especially, a SiC Schottky barrier diode (SBD) is most often used in low-voltage switching and low on-resistance power applications. However, electric field crowding at the contact edge of SBDs induces early breakdown and limits their performance. To overcome this problem, several edge termination techniques have been proposed. This paper proposes an improvement in the breakdown voltage using a double-field-plate structure in SiC SBDs, and we design, simulate, fabricate, and characterize the proposed structure. The measurement results of the proposed structure, demonstrate that the breakdown voltage can be improved by 38% while maintaining its forward characteristics without any change in the size of the anode contact junction region.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.2
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• pp.1-7
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• 1999

The polymide thin films were fabricated by vapor deposition polymerized method of dry processes and studied the electric breakdown characteristics by self healing method. Polyamic-acid(PAA) thin films prepared by vapor deposition-polymerization (VDP) from PMDA(Pyromellitic dianhydride) and DDE(4,4'-diaminodiphenyl ether) were changed to PI thin films by thermal curing. In the same sample, electric breakdown fields increase with increasing test number, and then saturated over test number of the 25th. When the curing temperatures were 200$^{\circ}C$, 250$^{\circ}C$, 300$^{\circ}C$ and 350$^{\circ}C$, the electric breakdown strengths of PI were 1.21MV/cm, 3.94MV/cm, 4.61MV/cm and 4.55MV/cm at the test number of 40th.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1193-1196
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• 1993

Electrical properties of $C_{22}$-Quinolium(TCNQ) Langmuir-Blodgett(LB) films are reported depending on a type of applied voltage on a type of applied voltage and temperature. A conductivity was identified to be anisotropic with a ratio of ${\sigma}||/{\sigma}{\bot}{\simeq}10^7$ at room temperature. The I-V characteristics along the film surface direction show an ohmic behavior up to a few hundred volts. But the I-V characteristics in the vertical direction display an ohmic behavior for low-electric field, and a nonohmic behavior for high-electric field. This nonohmic behavior has already been interpreted as a conduction mechanism of space-charge limited current and Schottky effect near the electric-field strengh of $10^6$ V/cm. When the electric field exceeds further, there is anormalous phenomia similiar to breakdown. From the study of I-V characteristics with the application of step or pulse voltage, we have found that the breakdown voltage shifts to higher one as the step or pulse interval becomes shorter. These results indicate that the breakdown is due to both electrical and thermal effect. To see the infulence of temperature, current was measured as function of temperature with several bias voltages, which are lower than that of breakdown. It shows that the current increases about 3 orders of magnitude near $60{\sim}70^{circ}C$, and remains constant for a while up to $140^{\circ}C$ and then suddenly drops. Arahidic acid was used to cmpare with $C_{22}$-Quinolium(TCNQ) LB films.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.39-46
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• 2017

This paper presents the fabrication of ceramic insulation layer on metallic heat spreading substrate, i.e. an insulated metal substrate, for planar type heater. Aluminum alloy substrate is preferred as a heat spreading panel due to its high thermal conductivity, machinability and the light weight for the planar type heater which is used at the thermal treatment process of semiconductor device and display component manufacturing. An insulating layer made of ceramic dielectric film that is stable at high temperature has to be coated on the metallic substrate to form a heating element circuit. Two technical issues are raised at the forming of ceramic insulation layer on the metallic substrate; one is delamination and crack between metal and ceramic interface due to their large differences in thermal expansion coefficient, and the other is electrical breakdown due to intrinsic weakness in dielectric or structural defects. In this work, to overcome those problem, selected metal oxide buffer layers were introduced between metal and ceramic layer for mechanical matching, enhancing the adhesion strength, and multi-coating method was applied to improve the film quality and the dielectric breakdown property.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.12
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• pp.59-64
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• 1991

Thin (25-103$\AA$) SiO$_2$ films are grown using the rapid thermal oxidation processing at temperatures of 105$0^{\circ}C$-115$0^{\circ}C$ for 5-30 sec, in order to investigate the characteristics of ultra thin oxide. For measuring the thickness of oxide TEM, ellipsometry, and C-V method which is taken in the condition of small surface band bending are used and compared. When neglecting the small deviation affected by both interface state and moisture charge effect, those three methods described above give similar results. In order to examine the effect of rapid thermal annealing, part of samples are annealed in N$_2$ ambient. MOS capacitors are fabricated and the characteristics of I-V and C-V are measured. Measurements show that the activation energy of initial thickness of oxide grown during the ramp-up time is of 1.125eV and the activation energy of the oxidation rate is of 0.98eV. As oxidation temperature is increased, dielectric breakdown field E$_{BD}$ is decreased due to the increase of fixed charge density N$_f$ However, E$_{BD}$ is shown to be decreased as increasing the thickness of oxide. The increase of N$_f$ in the early stage of thermal annealing results in the decrease of E$_{BD}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.587-593
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• 2007

Oil-based nanofluids were prepared by dispersing spherical and fiber shaped $Al_2O_3$ and AlN nanoparticles in transformer oil. Two hydrophobic surface modification processes using oleic acid (OA) and polyoxyethylene alkyl acid ester (PAAE) were compared in this study. The dispersion stability, viscosity and breakdown voltage of the nanofluids were also characterized. $(Al_2O_3+AlN)$ mixed nanofluid was prepared to take an advantage of the excellent thermal conductivity of AlN and a good convective heat transfer property of fiber shaped $Al_2O_3$. For $(Al_2O_3+AlN)$ particles with 1 % volume fraction in oil, the enhancement of thermal conductivity and convective heat transfer coefficient was nearly 11 % and 30 %, respectively, compared to pure transformer oil. The nanofluid, containing $Al_2O_3+AlN$, successfully lowered the temperature of the heating element and oil itself during a natural convection test using a prototype transformer.

• Progress in Superconductivity and Cryogenics
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• v.15 no.4
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• pp.53-58
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• 2013

KSTAR in-vessel cryo-pump has been installed in the vacuum vessel top and bottom side with up-down symmetry for the better plasma density control in the D-shape H-mode. The cryogenic helium lines of the in-vessel cryo-pump are located at the vertical positions from the vacuum vessel torus center 2,000 mm. The inductive electrical potential has been optimized to reduce risk of electrical breakdown during plasma disruption. In-vessel cryo-pump consists of three parts of coaxial circular shape components; cryo-panel, thermal shield and particle shield. The cryo-panel is cooled down to below 4.5 K. The cryo-panel and thermal shields were made by Inconel 625 tube for higher mechanical strength. The thermal shields and their cooling tubes were annealed in air environment to improve the thermal radiation emissivity on the surface. Surface of cryo-panel was electro-polished to minimize the thermal radiation heat load. The in-vessel cryo-pump was pre-assembled on a test bed in 180 degree segment base. The leak test was carried out after the thermal shock between room temperature to $LN_2$ one before installing them into vacuum vessel. Two segments were welded together in the vacuum vessel and final leak test was performed after the thermal shock. Commissioning of the in-vessel cryo-pump was carried out using a temporary liquid helium supply system.