• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.201-201
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• 2011

Recently, mussel-inspired surface modification, called polydopamine coating has been extensively implemented to many areas, due to its material versatility and ease to use. In particular, incubation of substrates in an alkaline dopamine solution resulted in self-polymerization of dopamine and modified variety of material surfaces, including noble metals, metal oxides, ceramics, and synthetic polymers. However, the polydopamine coating has a drawback to practical use; it takes more than 12 hrs to introduce sufficient polydopamine layers to solid substrates. Here, we investigated the rate-enhanced polydopamine coating by varying reaction conditions: pH, concentration, and the addition of the oxidizing agent. As a result, the optimum condition for fast polydopamine coating was found, and solid substrates were efficiently coated with polydopamine layers in just few minutes using the condition. The polydopamine-modified surface was characterized by XPS and contact angle goniometry, and the biocompatibility of the modified surface was also proved by cell attachment test.

• Journal of Energy Engineering
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• v.5 no.2
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• pp.198-202
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• 1996

Reactive metals like aluminum generate hydrogen gas when it reacts with water. Aluminum, despite its high chemical affinity with water, cannot continue the reaction due to the passive oxide layers formed on its surface. When the reaction is assisted by electrical energy dissipation in the form of discharge, the reaction is more likely to be sustained. In this report, some preliminary experimental results are presented regarding the hydrogen generation based on this scheme.

• Korean Chemical Engineering Research
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• v.55 no.2
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• pp.275-278
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• 2017

Heterogeneous semiconductor composites have been widely used to establish high-performance microelectronic or optoelectronic devices. During a deposition of silicon atoms on silicon/germanium compound surfaces, germanium (Ge) atoms are segregated from the substrate to the surface and are mixed in incoming a silicon layer. To suppress Ge segregation to obtain the interface sharpness between silicon layers and silicon/germanium composite layers, approaches have used silicon hydride gas species. The hydrogen atoms can play a role of inhibitors of silicon/germanium exchange. However, there are few kinetic models to explain the hydrogen effects. We propose using segregation probability which is affected by hydrogen atoms covering substrate surfaces. We derived the model to predict the segregation probability as well as the profile of Ge fraction through layers by using chemical reactions during silicon deposition.

• Progress in Superconductivity and Cryogenics
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• v.8 no.4
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• pp.19-21
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• 2006

Biaxially textured Ni was fabricated by electrodeposition process and delaminated from the biaxially textured cathode surface for further buffer layer deposition process. Those electrode posited Ni substrates showed well-developed biaxial texture and smooth surface. In order to improve the thermal stability of Ni substrates, Mn was alloyed by adding Mn precursor into the electrodeposition bath. Subsequently, $CeO_2$ buffer layers are deposited by MOD process to prevent interfacial reaction between superconductor and substrates. In particular, Bismuth oxide was added to $CeO_2$ to realize lower temperature processing of buffer layers. The microstructure and texture development of each layers have been investigated. Preliminary results shows that all electro/chemical process can be a candidate for cost effective route to YBCO coated conductor.

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.419-428
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• 1995

Polycrystalline silicon carbide (SiC) thick films were depostied by low pressure chemical vapor deposition (LPCVD) using CH3SiCl3 (MTS) and H2 gaseous mixture onto isotropic graphite substrate. Effects of deposition variables on the SiC film were investigated. Deposition rate had been found to be surface-reaction controlled below reactor temperature of 120$0^{\circ}C$ and mass-transport controlled over 125$0^{\circ}C$. Apparent activation energy value decreased below 120$0^{\circ}C$ and deposition rate decreased above 125$0^{\circ}C$ by depletion effect of the reactant gas in the direction of flow in a horizontal hot wall reactor. Microstructure of the as-deposited SiC films was strongly influenced by deposition temperature and position. Microstructural change occurred greater in the mass transport controlled region than surface reaction controlled region. The as-deposited SiC layers in this experiment showed stoichiometric composition and there were no polytype except for $\beta$-SiC. The preferred orientation plane of the polycrystalline SiC layers was (220) plane at a high reactant gas concentration in the mass transfer controlled region. As depletion effect of reactant concentration was increased, SiC films preferentially grow as (111) plane.

• Applied Chemistry for Engineering
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• v.10 no.4
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• pp.515-522
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• 1999

Asymmetric polyetherimide membrane were prepared by phase inversion method, and the effects of NaOH concentration and reaction time on the morphology change of the polyetherimide membranes were studied. The morphology of skin layers varied from dense structure to sphere structure with increasing concentration of modification solution. The thickness of dense layer increased with increasing reaction time. However, when either the concentration of modifying solution was very high or the reaction time was very long, the dense layers of the asymmetric membrane were disappeared. From these results, it was found that the surface morphology of the asymmetric polyetherimide membranes depended strongly on the modification conditions such as concentration of modification solution and reaction time. These results might be explained by the hydrolysis reaction of polyetherimide into polyamic acid by the NaOH solution.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.2
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• pp.139-144
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• 1999

Hydrogen concentration depth profiles in homoepitaxial Si(001) films grown from hyper-thermal Si beams generated by ultrahigh vacuum (UHV) ion-beam sputtering have been measured by nuclear reaction analyses as a function of film growth temperature and deposition rate. Bulk H concentrations CH in the crystalline Si layers were found tio be below detection limits, 1${\times}$1019cm-3, with no indication of significant H surface segregation at the crystalline/amorphous interface region. This is quite different than the case for growth by molecular-beam epitaxy (MBE) where strong surface segregation was observed for similar deposition conditions with average CH values of 1${\times}$1020cm-3 in the amorphous overlayer. The markedly decreased H concentrations in the present experiments are due primarily to hydrogen desorption by incident hyperthermal Si atoms. Reduced H surface coverages during growth combined with collisionally-induced filling of interisland trenches and enhanced interlayer mass transport provide an increase in critical epitaxial thicknesses by up to an order of magnitude over previous MBE results.

• Journal of Surface Science and Engineering
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• v.23 no.4
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• pp.197-207
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• 1990

Atomic layer epitaxy is a relatively new epitaxial pprocess chracterized by the alternate and separate exposure of a susbstrate surface to the reactants contaning the constituent element of a compound semicoductror. The ideal ALE is expected to provide sevral advantageous as petcts for growing complicated heterostrutures such as relativly easy controls of the layer thinkness down to a monolayer and in forming abrupt heterointerfaces though monolayer self-saturatio of the growth. In addition, since ALE is stongly dependent on the surface reaction, the growth can also be controlled by photo-excitation which provides activation can be energies for each step of the reaction paths. The local growth acceleration by photo-excitation can be exploited for growing several device strures on the same wafer, which provides another important practical advantage. The ALE growth of GaAs has advanced to the point the laser opertion has been achieved from AlGs/GaAs quantun well structures where thee active layers were grown by thermal and Ar-laser assisted ALE. The status of the ALE growth of GaAs and other III-V compounds will be reviewed with respect to the growth saturation behavior and the electrical properties of the grown crystals.

• Korean Journal of Metals and Materials
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• v.56 no.12
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• pp.885-892
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• 2018

Molybdenum disulfide ($MoS_2$) based electrocatalysts have been proposed as substitutes for platinum group metal (PGM) based electrocatalyst to hydrogen evolution reaction (HER) in water electrolysis. Here, we studied $MoS_2/CNFs$ hybrid catalyst prepared by electrospinning method with heat treatment for polymer electrolyte membrane(PEM) water electrolysis to improve the HER activity. The physicochemical and electrochemical properties such as average diameter, crystalline properties, electrocatalitic activity for HER of synthesized $MoS_2/CNFs$ were investigated by the Scanning Electron Microscope (SEM), X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), Transmission Electron Microscopy (TEM), Raman Spectroscopy (Raman) and Linear Sweep Voltammetry (LSV). The as spun ATTM/PVP nanofibers were prepared by sol-gel and electrospinning method. Subsequently, the $MoS_2/CNFs$ was dereived from reduction heat treatment of ATTM at the ATTM/PVP nanofibers and carbonization heat treatment. Synthesized $MoS_2/CNFs$ electrocatalyst had an average diameter of $179{\pm}30nm$. We confirmed that the $MoS_2$ layers in $MoS_2/CNF$ electrocatalyst consist of 3~4 layers from the Raman results. In addition, We confirmed that the $MoS_2$ layers in $MoS_2/CNF$ catalyst consist of 7.47% octahedral 1T phase $MoS_2$, 63.77% trigonal prismatic 2H phase $MoS_2$ with 28.75% $MoO_3$ through the XRD, Raman and XPS results. It was shown that $MoS_2/CNFs$ had the overpotential of 0.278 V at $10mA/cm^2$ and tafel slope of 74.8 mV/dec in 0.5 M sulfuric acid ($H_2SO_4$) electrolyte.

• Journal of Industrial Technology
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• v.2
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• pp.13-19
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• 1982

Polycrystalline silicon layers have been deposited by a chemical vapor deposition technique using $SiCl_4$, $H_2$ gas mixture on single crystal silicon substrates. In this work, the effects of depostion temperature and total flow rate on the deposition rate of polycrystalline silicon are investigated. From the experimental results it was found that the formation reaction of polycrystalline silicon was limited by surface reaction and mass transfer controlled as the deposition temperature was increased. The morphology of polycrystalline silicon layer changed from a fine structure to a coarse one as the deposition temperature was increased.