• 한국세라믹학회지
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• 제48권3호
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• pp.246-250
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• 2011

Effects on sintering and electrical properties of $La_{0.7}Ca_{0.3}Cr_{0.9}Co_{0.1}O_{3-{\delta}}$ system, a interconnect material for cylindrical and flat tubular solid oxide fuel cells (SOFC), have been investigated by Ca-source when using $CaCO_3$ and $CaF_2$. When using $CaCO_3$ and $CaF_2$ was mixing as Ca-source, single phased perovskite solid solution was observed for each sample. The sintering temperature was decreased by $CaF_2$ contents was increased. When using 0.1 mole $CaF_2$ was densely sintered at $1400^{\circ}C$ and relative density was 93.8%. Also, electrical conductivity in oxidation and reducing atmosphere was 47, 4.3 S/cm, respectively, due to $F^-$ ion enhance the electrical conductivity in reducing atmosphere.

• Journal of Radiation Protection and Research
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• 제23권4호
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• pp.211-218
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• 1998

감마선원과 피폭자 사이의 거리, 방사선원의 크기 그리고 평균 감마에너지에 따른 외부 감마 피폭선량률의 변화를 분석하였다. 임의 형태로 공기중과 지표에 침적된 방사성물질로부터 외부 감마 피폭선량을 평가하기 위해 개발된 방법을 이용하여 분석을 수행하였다. 공기중의 점선원과 피폭자 사이의 거리가 10 m 이내로 짧은 경우에는 평균 감마에너지가 0.07 MeV에서 피폭선량률이 최소값을 나타내고, 거리가 20 m 이상으로 멀어지면 감마에너지의 증가에 따라 계속적으로 피폭선량률이 증가한다. 반경 40 m 이상의 반구형태의 방사능 구름으로부터 반구의 중심에 위치한 피폭자의 경우에는 감마에너지 증가에 따라 계속적으로 피폭선량률이 증가한다. 지표에 침적된 방사선원으로부터 피폭을 받는 경우에는 지표선원의 면적크기에 상관없이 0.07 MeV에서 최소 피폭선량률이 나타난다. 분석결과 방사선원의 분포형태와 평균 감마에너지가 외부 감마피폭선량의 변화에 큰 영향을 미치고 있음을 알 수 있었다.

• International Journal of Reliability and Applications
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• 제5권1호
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• pp.1-13
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• 2004

It is recently well recognized that the technique for the one-sided stress wave velocity measurement in structural materials provides measurement in structural materials provides valuable information on the state of the material such as quality, uniformity, location of cracked or damaged area. This technique is especially effective to measure velocities of longitudinal and Rayleigh waves when access to only one surface of structure is possible. However, one of problems for one-sided stress wave velocity measurement is to get consistent and reliable source for the generation of elastic wave. In this study, the laser based surface elastic wave was used to provide consistent and reliable source for the generation of elastic wave into the materials. The velocities of creeping wave and Rayleigh wave in materials were measured by the one-sided technique using laser based surface elastic wave. These wave velocities were compared with bulk wave velocities such as longitudinal wave and shear wave velocities to certify accuracy of measurement. In addition, the mechanical properties such as poisson's ratio and specific modulus(E/p) were calculated with the velocities of surface elastic waves.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1490-1493
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• 2009

In this work we present a new type of line plasma source using an internal-type ICP operated at 2MHz with a ferrite module, describe the effect of ferrite module on the enhancement of the plasma properties and the uniformity, and compare to those obtained with 13.56MHz discharge. Also the electrical characteristics of the antenna line and the characteristics of the plasma uniformity were studied.

• 한국전기전자재료학회논문지
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• 제17권11호
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• pp.1212-1217
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• 2004

Red organic electroluminescent (EL) devices based on tris(8-hydroxyquinorine aluminum) (Alq$_3$) doped with red emissive materials, 4-(dicyanomethylene)-2-t-butyl -6-(l,1,7,7-tetramethyljulolidyl-9-enyl)4H-pyran (DCJTB). poly(3-hexylthiophene) (P3HT). rubrene and 4-dicyanomethylene-2-methyl-6[2-(2,3.6.7-tetrahydro-lH,5H-benzo-[i,j]quinolizin-8yl)vinyl]-4H-pyran (DCM2) were fabricated for applying to the red light source, The photoluminescence (pL) intensities of red emissive materials doped in Alq$_3$ are limited by the concentration quenching with increasing the doping ratio and the doping concentration of DCJTB, DCM2, P3HT and rubrene measured at the maximum intensity showed 5, 1, 0.5 and 2 wt%, respectively. Time-resolved PL dynamic results showed that the PL lifetime of red emissive materials doped in Alq$_3$ were increased more than the value of material itself. It means that the efficient energy transfer occurred in the mixed state and Alq$_3$ is a suitable host materials for red emissive materials, The device which was used DCJTB as a dopant achieved the best result of the maximum luminance of 594 cd/$m^2$ at 15 V and showed the chromaticity coordinates of x=0,624, y=0,371.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.114-114
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• 2003

• 한국재료학회:학술대회논문집
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• 한국재료학회 1992년도 춘계학술발표회
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• pp.142-143
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• 1992

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 추계학술발표강연 및 논문개요집
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• pp.33-33
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• 1998

• 한국재료학회지
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• 제28권4호
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• pp.235-240
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• 2018

We propose a speedy two-step deposit process to form an Au electrode on hole transport layer(HTL) without any damage using a general thermal evaporator in a perovskite solar cell(PSC). An Au electrode with a thickness of 70 nm was prepared with one-step and two-step processes using a general thermal evaporator with a 30 cm source-substrate distance and $6.0{\times}10^{-6}$ torr vacuum. The one-step process deposits the Au film with the desirable thickness through a source power of 60 and 100 W at a time. The two-step process deposits a 7 nm-thick buffer layer with source power of 60, 70, and 80 W, and then deposits the remaining film thickness at higher source power of 80, 90, and 100 W. The photovoltaic properties and microstructure of these PSC devices with a glass/FTO/$TiO_2$/perovskite/HTL/Au electrode were measured by a solar simulator and field emission scanning electron microscope. The one-step process showed a low depo-temperature of $88.5^{\circ}C$ with a long deposition time of 90 minutes at 60 W. It showed a high depo-temperature of $135.4^{\circ}C$ with a short deposition time of 8 minutes at 100 W. All the samples showed an ECE lower than 2.8 % due to damage on the HTL. The two-step process offered an ECE higher than 6.25 % without HTL damage through a deposition temperature lower than $88^{\circ}C$ and a short deposition time within 20 minutes in general. Therefore, the proposed two-step process is favorable to produce an Au electrode layer for the PSC device with a general thermal evaporator.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.