• International Journal of Precision Engineering and Manufacturing
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• v.9 no.4
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• pp.3-10
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• 2008

Micro-electrical discharge machining (micro-EDM) is an effective method for machining all types of conductive materials regardless of hardness. Since micro-EDM is an electro-thermal process, the energy supplied by the pulse generator is an important factor in determining the effectiveness of the process. In this study, an investigation was conducted on the micro-EDM of tungsten carbide (WC) to compare the performance of transistor and resistance/capacitance (RC) pulse generators in obtaining the best quality micro-hole. The performance was measured by the machining time, material removal rate, relative tool wear ratio, surface quality, and dimensional accuracy. The RC generator was more suited for minimizing the pulse energy, which is a requirement for fabricating micro-parts. The smaller-sized debris formed by the low-discharge energy of RC micro-EDM could be easily flushed away from the machined zone, resulting in a surface free of burrs and resolidified molten metal. The RC generator also required much less time to obtain the same quality micro-hole in WC. Therefore, RC generators are better suited for fabricating micro-structures, producing good surface quality and better dimensional accuracy than the transistor generators, despite their higher relative tool wear ratio.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.1117-1120
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• 2001

Chemical mechanical planarization(CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There have been serious problems in CMP in terms of repeatability and defects in patterned wafers. Since IBM's official announcement on Copper Dual Damascene(Cu2D) technology, the semiconductor world has been engaged in a Cu2D race. Today, even after~3years of extensive R&D work, the End-of-Line(EOL) yields are still too low to allow the transition of technology to manufacturing. One of the reasons behind this is the myriad of defects associated with Cu technology. Especially, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasive and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using Ce$O_2$ is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method for developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.11 no.3
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• pp.86-92
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• 2002

In this study, experiments were carried out to investigate the characteristics of grinding and wear process of diamond wheel far ceramic materials. Normal component of grinding resistance of $Al_2$O$_3$ was less then that of $Si_3 N_4$ and $ZrO_2$. This seems to be the characteristics of ceramic tools on work pieces both of high hardness. For the case of $Si_3 N_4$ and $ZrO_2$, as the mesh number of wheel increases, the surface roughness decreases. For the case of $Al_2 O_3$, the surface roughness does not decreases. Specific binding energy decreases as the material removal rate per unit time increases. For the case of $Si_3 N_4$ and $ZrO_2$, grinding is carried out by abrasive wear processes. For the case of $Al_2 O_3$, grinding is carried out by grain shedding process due to brittle fracture.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.12
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• pp.1285-1289
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• 2012

This study has been focused on application of ELID lapping process for mirror-surface machining of sapphire wafer. Sapphire wafer is a superior material with optic properties of high performance as light transmission, thermal conductivity, hardness and so on. High effective surface machining technology is necessary to use sapphire as various usages. The interval ELID lapping process has been set up for lapping of the sapphire material. According to the ELID lapping experimental results, it shows that 12.5 kg of load for lapping is most pertinent to ELID lapping. the surface of sapphire can be eliminated by metal bonded wheel with micron abrasives and the surface roughness of 60 nmRa can be gotten using grinding wheel of 2,000 mesh in 4.5 um, depth of cut. In this study, the chemical experiments after ELID grinding also has been conducted to check chemical reaction between workpiece and grinding wheel on ELID grinding process. It shows that the chemical reaction has not happened as the results of the chemical experiments.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.12
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• pp.192-199
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• 2001

Chemical mechanical planarization (CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There hale been serious problems in CMP in terms of repeatability and deflects in patterned wafers. Especial1y, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasives and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using CeO$_2$is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method fur developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

• Membrane Journal
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• v.17 no.3
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• pp.210-218
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• 2007

CEDI-BPM(Continuous Electrodeionization-Bipolar Membrane) has advantages due to high ion permselectivity through ion exchange membranes and the production of $H^+$ and $OH^-$ ions on the bipolar membrane surfaces for regeneration of ion exchange resin during electrodeionization operation. In this study, hardness materials were removed by the CEDI-BPM without scale formation and the ion exchange resins were electrically regenerated during the operation. The adsorption characteristic of ion exchange resin surface, the influence of flow rate on the hardness removal and electric regeneration were investigated in the study. The removal efficiency of Ca was higher than that of Mg in the CEDI-BPM, which was related to the high adsorption capacity of Ca on the cation exchange resin. With increasing flow rate, the flux of Ca and Mg was enhanced by the permselectivity of a cation exchange membrane. In the electric regeneration of CEDI-BPM, it was shown that the regeneration efficiency was higher with a lower regeneration potential applied between cathode and anode.

• Journal of Dental Rehabilitation and Applied Science
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• v.25 no.2
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• pp.157-169
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• 2009

The aim of this study was to evaluate effect of implant abutment screw coating treatment on joint stability, investigating mechanical properties of these. For this study used $ExFeel^{(R)}$ external hexed implant system and $15mm{\times}1mm$ discs. Experimental group was $1{\mu}m$ TiN, TiCN, TiC coated abutment screws and discs. To know mechanical property, i evaluated adhesion strength, surface hardness, using disc, corrosion test using screw. The results were as follows : rotation angle of coated screws increased than that of non-coated screw because of lower friction coefficient, especially TiC coated screw group had the largest value, but removal torque decreased in all coated screws (p<0.05). Torque loss before and after fatigue test was the smallest in TiC-coated screws, and the largest in non-coated screws (p<0.05), and there was no statistically significant difference between dry condition and wet condition of screws because of higher surface hardness and lower friction coefficient. From the above results, TiN, TiCN, TiC coating group had high abrasion resistance, especially TiC coated group which had low torque-consuming, high rotation angle as low friction coefficient will be considered to influence on implant abutment screw joint stability positively.

• Journal of the korean academy of Pediatric Dentistry
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• v.28 no.1
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• pp.118-128
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• 2001

This study was performed to evaluate the toothbrush abrasion characteristics of seven commercially available light-cured cervical restorative materials one resin-modified glass-ionomer material(Fuji II LC) three polyacid-modified composites(Compoglass, Dyract, F2000), and three light-cured composites(Heliomolar, Palpique Estelite, UniFil F). All samples were stored in distilled water at $37^{\circ}C$ for 10 days. 2.0N of weight was loaded during the test and the abraded surfaces were examined with profilometer and SEM after 100,000 cycles. The results obtained were summarized as follows; 1. The highest hardness value of 79.7 was observed in the FT group and the lowest value of 20.0 was observed in the HM group. Results of Tukey test showed that an overall significant difference was indicated except the CG and DR groups(p<0.05). 2. The highest surface roughness was observed in the FL group and the lowest was observed in the UF group. Results of Tukey test showed the significant difference between the FL or FT and UF groups(p<0.05). 3. Statistically higher abrasion and surface roughness were observed for the dentifrice of paste type, Perio A+, than for that of gel paste type, Tom & Jerry. 4. The surface roughness values increased on the abraded surfaces because of the protrusion of filler particles due to selective removal of matrix resin.

• Tribology and Lubricants
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• v.35 no.6
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• pp.323-329
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• 2019

Sapphire is currently used as a substrate material for blue light-emitting diodes (LEDs). The market for sapphire substrates has expanded rapidly as the use of LEDs has extended into various industries. However, sapphire is classified as one of the most difficult materials to machine due to its hardness and brittleness. Recently, a lap-grinding process has been developed to combine the lapping and diamond mechanical polishing (DMP) steps in a single process. This paper studies, the effect of wafer surface roughness on the chemical mechanical polishing (CMP) process by pressure and abrasive concentration in the lap-grinding process of a sapphire wafer. In this experiment, the surface roughness of a sapphire wafer is measured after lap-grinding by varying the pressure and abrasive concentration of the slurry. CMP is carried out under pressure conditions of 4.27 psi, a plate rotation speed of 103 rpm, head rotation speed of 97 rpm, and slurry flow rate of 170 ml/min. The abrasive concentration of the CMP slurry was 20wt, implying that the higher the surface roughness after lapgrinding, the higher the material removal rate (MRR) in the CMP. This is likely due to the real contact area and actual contact pressure between the rough wafer and polishing pad during the CMP. In addition, wafers with low surface roughness after lap-grinding show lower surface roughness values in CMP processes than wafers with high surface roughness values; therefore, further research is needed to obtain sufficient surface roughness before performing CMP processes.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.38 no.1
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• pp.44-49
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• 2012

Introduction: Sialolithes are initiated by localized deposition of calcified material in the salivary glands. And that may even cause various symptom especially swelling and pain. This study purposes to collect statistical data of sialolithiasis for clinical analysis. Materials and Methods: Among forty seven patients who have visited Seoul National University Dental Hospital during 2004-2009, patients' age, sex, location and size of stone, radiodensity of stone, symptom, surgical procedure were investigated. Statistical correlation between size, location, symptom was evaluated. Chemical composition was analyzed for 3 sialolithes. Results: The average age was 41.4 years. Sialolithiasis had slight female predilection (57.4%). Most cases occurred in the submandibular glands (91.5%). And most cases had radiopaque features (95.8%). The average size was 7.17 mm. The most frequent location of the stones were the duct orifice and the submandibular gland hilum (16 cases in each), followed by the middle part of the duct (n=8), the intraglandular area (n=4), and the proximal part of the duct (n=3). Eleven cases were asymptomatic. Thirty six cases had complaints of pain, swelling, hardness, and decrease in saliva flow (multiple symptoms). Various methods of surgery was performed. Two cases were self-removed. Thirty seven cases underwent procedure involving stone removal alone. Six cases underwent gland extirpation, and two cases underwent ductoplasty. Conclusion: There was no statistical correlation between size, location, and symptoms. Sialolith was composed of Ca (58.5-69.3%), P (30.7-35.7%), organic material, and trace inorganic material.