• Journal of the Korean Mathematical Society
• /
• v.41 no.1
• /
• pp.157-174
• /
• 2004

In this work we discuss "plank problems" for complex Banach spaces and in particular for the classical $L^{p}(\mu)$ spaces. In the case $1\;{\leq}\;p\;{\leq}\;2$ we obtain optimal results and for finite dimensional complex Banach spaces, in a special case, we have improved an early result by K. Ball [3]. By using these results, in some cases we are able to find best possible lower bounds for the norms of homogeneous polynomials which are products of linear forms. In particular, we give an estimate in the case of a real Hilbert space which seems to be a difficult problem. We have also obtained some results on the so-called n-th (linear) polarization constant of a Banach space which is an isometric property of the space. Finally, known polynomial inequalities have been derived as simple consequences of various results related to plank problems.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.17 no.1
• /
• pp.13-22
• /
• 2022

In this paper, we propose single and array antenna with dual linear polarization characteristics for 28 GHz band. The proposed antenna is designed two microstirp feeding structure and Taconic TLY-5 substrate, which is thickness 0.5 mm, and the dielectric constant is 2.2. The size of single patch antenna is 3.4 mm×3.4 mm, and total size of single antenna is 15.11 mm×15.11 mm. Also, the size of array antenna is 3.15 mm×3.15 mm, and total size of array antenna is 21.5 mm×13.97 mm. From the fabrication and measurement results, for 1×2 array antenna, in case of vertical polarization, cross polarization ratios are obtained from 14.23 dB to 20.79 dB and in case of horizontal polarization, cross polarization ratios are obtained from 14.31 dB to 22.74 dB for input port 1. in case of vertical polarization, cross polarization ratios are obtained from 15.75 dB to 25.88 dB and in case of horizontal polarization, cross polarization ratios are obtained from 14.70 dB to 22.82 dB for input port 2.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.13 no.12
• /
• pp.2505-2510
• /
• 2009

The SiOC films were deposited with the variation of flow rate ratios by chemical vapor deposition. It was researched the reason of decreasing the dielectric constant in SiOC film and the relationship between the dielectric constant and the thickness. The thickness of the deposited films tends to in proportion to the refractive index and the sample with the lowest dielectric constant decreased the thickness. The refractive index was decreased after annealing because of the decreasing of the film's thickness by annealing process.

• The Bulletin of The Korean Astronomical Society
• /
• v.36 no.2
• /
• pp.86.1-86.1
• /
• 2011

We are developing a new universal spectropolarimeter on the Domeless Solar Telescope (DST) at the Hida Observatory to realize precise spectropolarimetric observations in a wide range of wavelength in visible and near infrared. The system aims to open a new window of plasma diagnostics by using Zeeman effect, Hanle effect, Stark effect, impact polarization, and atomic polarization for measuring the external magnetic field, electric field, or an anisotropy in the excitation of the atoms. The polarimeter is a successor of formerly developed polarimeter on DST, which make possible to observe a polarization in a photospheric spectral line with polarimetric accuracy of 10-2 (Kiyohara et al. 2004). The new system consists of a 60cm aperture vacuum telescope, a high dispersion vacuum spectrograph, polarization modulator / analyzer composed of a rotating waveplate whose retardation is constant for a wide range of wavelength and Wallaston prism, and a fast and large format CCD camera or IR camera. Spectral images in both orthogonal polarizations are taken simultaneously with a frame rate of ~20Hz while the waveplate rotates continuously in a rate of 1rev./sec. Thus It takes 5 ~ 60 sec to observe polarization with accuracy of 10-3 in a wide wavelength range (400 - 1100nm). We also examined a polarimetric model of the telescope with accuracy of 10-3 to calibrate instrumental polarization on some wavelengths. In this talk, I will focus on the performance of the instrument.

• Journal of the Korean Ceramic Society
• /
• v.21 no.2
• /
• pp.121-126
• /
• 1984

The dielectric properties of $BaTiO_3$ containing 0~0.3mol% and ZnO respectively as additives were investigated as a function of temperature from $25^{\circ}C$ to 14$0^{\circ}C$ and frequency from 24 KHz to 15MHz. The density of sintered $BaTiO_3$ was increased with addition of increasing to 0.15mol% amounts of $Sb_2O_3$ and the dielectric constant was also increased. This is due to space charge polarization with Ba vacancies. Above 0.15mol% $Sb_2O_3$ the density was decreased and the dielectric constant was also decreased due to occuring the discharge through voids. The density of sintered $BaTiO_3$ was decreased with addition of increasing to 0.15mol% amounts of ZnO and the dielectric constant was decreased due to occuring the discharge through voids. Above 0.15mol% ZnO the density was increased and the dielectric constant was also increased.

• Elastomers and Composites
• /
• v.56 no.2
• /
• pp.57-64
• /
• 2021

This paper reviews recent developments and applications of dielectric elastomers (DEs) and suggests various techniques to improve DE properties. DEs as smart materials are a variety of electro-active polymers (EAPs) that convert electrical energy into mechanical energy and cause a large deformation when a voltage is applied. The dielectric constant, modulus, and dielectric loss of DEs determine the efficiency of deformation. Among these, the dielectric constant significantly affects their performance. Therefore, various recent approaches to improve the dielectric constant are reviewed, including the enhancement of polarization, introduction of microporous structures in the matrix, and introduction of ferroelectric fillers. Furthermore, the basic principles of DEs are examined, as well as their various applications such as actuators, generators, sensors, and artificial muscles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.255-258
• /
• 2000

In this study, the structural, dielectric and piezoelectric properties of Pb[(Sb$\sub$1/2/Nb$\sub$1/2/)$\sub$x/- (Ni$\sub$1/3/Nb$\sub$2/3/)$\sub$0.15-x/- (Zr,Ti)$\sub$0.85/]O$_3$(x = 0, 0.01, 0.02, 0.03, 0.04, 0.05) ceramics is investigated as a function of Pb(Sb$\sub$1/2/Nb$\sub$1/2/)O$_3$ (abbreviated PSN) substitution. With the increase of PSN substitution, the crystal structure is transO$_3$formed from the tetragonal phase to the rhombohedral phase and the grain size is decreased abruptly. The curie temperature is decreased with the PSN substitution. The dielectric constant is increased with the PSN substitution and maximum value of 2290 is obtained at 4mol% PSN. With the PSN substitution, the coercive field is increased and the remnant polarization is decreased. The Electromechanical coupling factor(k$\sub$p/) Is showed the highest value of 0.622 at lmol% PSN and the mechanical quality factor(Q$\sub$m/) is decreased abruptly with the PSN substitution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05c
• /
• pp.190-193
• /
• 2003

Sm-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on the Pt(111)/Ti/$SiO_2$/Si(100) substrates prepared by a sol-gel method. The effect on structural and electrical properties of PZT thin films measured according to the Sm content. Sm-doping altered significantly dielectric and ferroelectric properties. The remanent polarization and the coercive field decreased with the increasing Sm content. The dielectric constant and the dielectric loss of PZT thin films decreased with the increasing Sm content. At 100 kHz, the dielectric constant and the dielectric loss of. the 0.3 mol% of Sm-doped PZT thin film were 1200 and 0.12 respectively. The remanent polarization (2Pr) of the 0.3 mol% of Sm-doped PZT thin film was $52.13{\mu}C/cm^2$ and the coercive field was 94.01 kV/cm. The 0.3 mol% of Sm-doped PZT thin film showed an improved fatigue characteristic comparing to the undoped PZT thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.58-61
• /
• 2001

Metal-insulator-semiconductor (MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/cm$^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8V, 50% duty cycle) in the 500kHz.

• Journal of Ceramic Processing Research
• /
• v.20 no.6
• /
• pp.603-608
• /
• 2019

In this study, the multilayered thin films of (Ba,Sr)TiO3/K(Ta,Nb)O3 were fabricated by the sol-gel and spin coating methods, and their structural and electrical properties were investigated. The specimen showed polycrystalline X-ray diffraction (XRD) characteristics with a tetragonal structure. The average grain size and film thickness for one coating were about 30~40nm and 60nm, respectively. The phase transition temperature of specimen was lower than 10 ℃. The dielectric constant and loss at 20 ℃ of the specimen coated six times were 1,231 and 0.69, respectively. The rate of change in dielectric constant at an applied direct current (DC) voltage of the six times coated thin films was 17.3%/V. The electrocaloric effect was the highest around the temperature at which the remanent polarization rapidly changed. When an electric field of 660kV/cm was applied to the triply coated thin films, the highest electrocaloric property of 4.41 ℃ was observed.