• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.5-8
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• 2001

The $Sr_{0.8}Bi_{2.4}Ta_{2}O_{9}(SBT)$ thin films are deposited on Pt-coated electrode$(Pt/TiO_{2}/SiO_{2}/Si)$ using RF magnetron sputtering method. With increasing annealing tempera ture from $600[^{\circ}C]$ to $850[^{\circ}C]$, Bi-layered perovskite phase was crystallized above $650[^{\circ}C]$. The dielectric constant is 213 at annealing temperature of $750[^{\circ}C]$ and dielectric loss have a stable value within 0.1. Leakage current density is $1.01{\times}10^{-8} A/cm^{2}$ at annealing temperature of $750[^{\circ}C]$ The fatigue characteristics of SBT thin films did not change up to $10^{10}$ switching cycles.

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.8
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• pp.894-900
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• 2006

The electrical characteristics associated with crystal structure changes as a function of La content for $(Pb_{1-x}La_x)(Zr_{0.5}Ti_{0.5})O_3$ thin films were investigated for applications in memory capacitors. Tetragonality of PLZT films decreased with increasing La content. Thin films with La $\geq$ 20 mol% were found to be cubic. Films with La $\geq$ 12 mol% exhibited broader dielectric peaks compared to those of bulk ceramics and behaved as relaxer ferroelectrics. Tetragonal PLZT film with 12 mol% La had a dielectric constant maximum of 1330 at room temperature and a charge storage density of ${\sim}18{\mu}C/cm^2$ at 5 V. Decrease in coercive field and remnant polarization with increase in La content were resulting from less dipolar response caused by the decreased crystal anisotropy. The leakage current densities $<10^{-8}A/cm^2$ up to 5 V bias voltage were observed for the films with La $\geq$ 14 mol%.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.59-66
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• 1993

PZT thin film deposited by rf magnetron sputtering was annealed by rapid thermal process(RTP) in PbO ambient to prevent vaporing of Pb and interface reactions. Si and TiN/Ti/Si substrates were prepared to survey application of TiN/Ti layer which can prevent interface interaction with Si and crack of PZT thin films. As temperature increased. PZT thin films surface on Si substrate appeared more severe cracks which should affect electrical properties deadly. TiN/Ti(40-150${\mu}{\Omega}{\cdot}cm$) layer applied for buffer layer suppressed interface interaction and film cracking. The measured leakage current(LC) and breakdown voltage(BV) of PZT thin film on TiN/Ti/Si substrate annealed at 650$^{\circ}$C for 15 sec (thickness of 2500$\AA$) were 38 nA/cm2 and 3.5 MV/cm and dielectric constant was 310 at 1 MHz, and remanent polarization (Pr) and coercive field (Ec) were 6.4${\mu}C/cm^{2}$ and 0.2MV/cm at 60 Hz, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.10
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• pp.1731-1736
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• 2008

In this paper, singly fed circularly polarized nearly-square patch antenna for receiving S-DMB is presented. It used teflon substrate of relative dielectric constant ${\in}_{\gamma}=2.2$ and the sire is $40{\times}40{\times}15[mm]$. Experimental results of fabricated antenna show that input return loss and axial ratio are about 22MHz, 25MHz at the center resonant frequency, respectively. And fabricated LNA has gain of 27.5 [dB], NF of 1.27 [dB], input return loss of -15.4 [dB] and output return loss of -18.9 dB, respectively. Simulation results and experimental results are good agreements. This proposed antenna is well able to handheld gadgets for receiving S-DMB.

• Journal of the Korean Geophysical Society
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• v.2 no.3
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• pp.225-233
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• 1999

Electrical resistivity of a rock-sample is dependant on not only formation factor of rock itself but also many parameters such as fluid type, measuring device, temperature, water saturation, electrical contact between electrode and core section, induced polarization, and frequency of electric source. In this study, we attempt to verify various affecting factors in core resistivity measurements and to find a better environment for core resistivity measurement. Particularly great attention has been paid to understanding the effects of temperature, water saturation, contact condition between sample and electrodes, and frequency of electric source. Precise measurement of resistivity can be achieved by utilizing silver paste for better contacts, taping samples for constant moisture contents, and using time-series resistivity data.

• Korean Journal of Soil Science and Fertilizer
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• v.46 no.1
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• pp.23-31
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• 2013

Microwave remote sensing can help monitor the land surface water cycle and crop growth. This type of remote sensing has great potential over conventional remote sensing using the visible and infrared regions due to its all-weather day-and-night imaging capabilities. In this paper, a ground-based multi-frequency (L-, C-, and X-band) polarimetric scatterometer system capable of making observations every 10 min was developed. This system was used to monitor the wheat over an entire growth cycle. The polarimetric scatterometer components were installed inside an air-conditioned shelter to maintain constant temperature and humidity during the data acquisition period. Backscattering coefficients for the crop growing season were compared with biophysical measurements. Backscattering coefficients for all frequencies and polarizations increased until dat of year 137 and then decreased along with fresh weight, dry weight, plant height, and vegetation water content (VWC). The range of backscatter for X-band was lower than for L- and C-band. We examined the relationship between the backscattering coefficients of each band (frequency/polarization) and the various wheat growth parameters. The correlation between the different vegetation parameters and backscatter decreased with increasing frequency. L-band HH-polarization (L-HH) is best suited for the monitoring of fresh weight (r=0.98), dry weight (r=0.96), VWC (r=0.98), and plant height (r=0.96). The correlation coefficients were highest for L-band observations and lowest for X-band. Also, HH-polarization had the highest correlations among the polarization channels (HH, VV and HV). Based on the correlation analysis between backscattering coefficients in each band and wheat growth parameters, we developed prediction equations using the L-HH based on the observed relationships between L-HH and fresh weight, dry weight, VWC and plant height. The results of these analyses will be useful in determining the optimum microwave frequency and polarizations necessary for estimating vegetation parameters in the wheat.

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.225-232
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• 1997

The performance characteristics of high rate discharge LiSOCl2 cells are highly affected by carbon cathode. During the cell discharge, SOCl2 reduction takes place at the porous carbon cathode, resulting in the precipitation of reaction products, mainly LiCl, within the pores of the substrate. This leads to eventual passivation of the cathode surface and resulting cell failure. To improve the cathode performance, we ex-amined discharge reactions of cathodes (half-cell, 50 mA/$\textrm{cm}^2$ constant current) with various surface density and thickness. The carbon cathode with the optimum capacity for our application is surface density 0.04 g/$\textrm{cm}^2$ and thickness 1.4mm carbon. The carbon cathode with surface density 0.04g/$\textrm{cm}^2$ and thickness 1.4 mm exhibits decreased polarization, increased discharge duration time and capacity (Ah/$\textrm{cm}^2$) as compared with that with surface density 0.04g/$\textrm{cm}^2$ and thickness 0.8mm. The porosities analyses on the two carbon cathodes show that total pore volume of the carbon cathode with thickness 1.4 mm is larger than that with thickness 0.8mm. The increased volume of mesopores (0.05$\mu$m~0.5$\mu$m) and macropores(>0.5$\mu$m) is ob-served with the carbon cathode with thickness 1.4mm as compared with that with thickness 0.8mm, which can be related with the observed capacity increase. We observed LiCl crystals, cubic crystallites and fused, plate-like aggregates, and some elemental S as discharge products by EDS and XRD.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.4
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• pp.7-14
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• 2000

A Bi$_{4}$Ti$_{3}$O$_{12}$ (BIT) thin film is prepared by sol-gel method using acetate precursors and evaluated whether it could be applied to NVFRAM (Non-Volatile Ferroelectric RAM). The drying and the annealing temperature are 40$0^{\circ}C$ and $650^{\circ}C$, respectively and they are determined from the DT-TG (Differential Thermal-Thermal Gravimetric) analysis. The BIT thin film deposited on Pt/Ta/SiO$_{2}$/Si substrate shows orthorhombic perovskite phase. The grain size and the surface roughness are about 100 nm and 70.2$\AA$, respectively. The dielectric constant and the loss tangent at 10 KHz are 176 and 0.038, respectively, and the leakage current density at 100 ㎸/cm is 4.71 $mutextrm{A}$/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$250 ㎸/cm, the remanent polarization (Pt) and the coercive field (Ec) are 5.92 $\mu$C/$\textrm{cm}^2$ and 86.3 ㎸/cm, respectively. After applying 10$^{9}$ square pulses of $\pm$5V, the remanent polarization of the BIT thin film decreases as much as about 33% from 5.92 $\mu$C/$\textrm{cm}^2$ of initial state to 3.95 $\mu$C/$\textrm{cm}^2$.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.29 no.3C
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• pp.127-136
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• 2009

The objective of this study is the development and verification of the 4-electrode resistivity probe (4ERP) for the estimation of electrical properties of the saturated soils. The 4ERPs with wedge and plane types are manufactured to obtain the electrical resistivity without polarization at the electrodes by using Wenner array. The wedge type is for the penetration into the soil samples and the plane type is for the installation into the cells used for the laboratory tests. The consolidation tests are carried out by using 6 types of glass beads and 3 types of sands in size. The test results show that the electrical resistivity increases with a decrease in the porosity, and the constant m used in Archie's law is dependent on the particle shape rather particle size. The one dimensional liquefaction tests show that the porosity obtained by the 4ERP is similar to that determined by the volume fraction. The penetration of the 4ERP into the large scale calibration chamber produces the resistivity profiles. This study demonstrates that the 4ERP may effectively estimate the porosity of the saturated soils.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1092-1098
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• 2006

The influence of the concentration of precursor solution and the number of solution coatings on the densification of the $Pb(Zr_xTi_{1-x})O_3$ (PZT) thick films was studied. PZT powder and PZT precursor solution were prepared by3 sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The composition of powder and precursor solution were PZT(70/30) and PZT(30/70), respectively. The PZT precursor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5 to 2.0 mol/L[M] and the number of coating was repeated from 0 to 6. The XRD patterns of all PZT thick films shelved typical perovskite polycrystalline structure. The porosity of the thick films was decreased with increasing the number of coatings and 6-time coated films with 1.5 M showed the dense microstructure and thickness of about $60{\mu}m$. The relative dielectric constant of the PZT thick film was increased with increasing the number of solution coatings and the thick films with 1.5 M, 6-time coated showed the 698. The remanent polarization the 1.5 M and 6-time coated PZT thick films was $38.3{\mu}C/cm^2$.