• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.195-198
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• 1999

A Bi$_4$Ti$_3$O$_{12}$ (BIT) thin film is prepared by sol-gel method using acetate precursors and evaluated whether it could be applied to NVFRAM. The drying and the annealing temperature are 40$0^{\circ}C$ and $650^{\circ}C$, respectively and they are determined from the DT-TG analysis. The BIT thin film deposited on Pt/Ta/SiO$_2$/Si substrate shows orthorhombic perovskite phase. The grain size and the surface roughness are about 100 nm and 70.2$\AA$, respectively. The dielectric constant and the loss tangent at 10 KHz are 176 and 0.038, respectively, and the leakage current density at 100㎸/cm is 4.71$mutextrm{A}$/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$250㎸/cm, the remanent polarization (Pr) and the coercive field (Ec) are 5.92$mutextrm{A}$/$\textrm{cm}^2$ and 86.3㎸/cm, respectively. After applying 10$^{9}$ square pulses of $\pm$5V, the remanent polarization of the BIT thin film decreases as much as about 33% from 5.92 $\mu$C/$\textrm{cm}^2$ of initial state to 3.95 $\mu$C/$\textrm{cm}^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05b
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• pp.75-81
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• 2003

This study evaporates ZnO layer thickness differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1{\varepsilon}_2)$ has larger peak values as it’s thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• Corrosion Science and Technology
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• v.4 no.1
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• pp.8-14
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• 2005

The corrosion behaviour of mild steel in phosphoric acid solution in the presence and absence of pollutants viz. Chloride, Fluoride and Sulfate ions at 302K-333K was studied using mass loss and potentiostatic polarization methods. The addition of chloride and sulfate ions inhibits the mild steel corrosion in phosphoric acid while fluoride ions stimulate it. The effect of temperature on the corrosion behaviour of mild steel indicated that inhibition of chloride and sulfate ions decreased with increasing temperature. The adsorption of these ions (Chloride and sulfate) on the mild steel surface in acid has been found to obey Langmuir adsorption isotherm. The values of activation energy (Ea) and free energy of adsorption ($\Delta$) indicated physical adsorption of these ions (chloride and sulfate) on the mild steel surface. The plot of $logW_{f}$ against time (days) at 302K gives a straight line, which suggested that it obeys first order kinetics and also calculate the rate constant k and half-life time $t_{1/2}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.73-79
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• 2002

This study evaporates ZnO layer thickness' differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1,{\varepsilon}_2)$ has larger peak values as it's thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• Journal of the Korean Ceramic Society
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• v.56 no.2
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• pp.160-166
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• 2019

In this study, we investigated the long-term stability of Nd₂NiO₄ solid oxide fuel cell (SOFC) cathodes to evaluate their chromium poisoning tolerance. Symmetrical cells consisting of Nd2NiO4 electrodes and a yttria-stabilized zirconia electrolyte were fabricated and the cell potential and polarization resistance were measured at 850 ℃ in the presence of gaseous chromium species for 800 h. Up to 500 h of operation, the cell potential remained constant at 500 mA/㎠. However, it increased slightly over the operation duration of 550-800 h. No appreciable increase was observed in the polarization resistance of the Nd₂NiO₄ cathode during the entire operation of 800 h. Physicochemical examinations revealed that the gaseous chromium species did not form chromium-related contamination not only in the Nd₂NiO₄ cathode but also at the cathode/electrolyte interface. The results demonstrated that Nd₂NiO₄ is resistant to chromium poisoning, and hence is a potential alternative to standard perovskite cathodes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.50-53
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• 2002

YMnO$_3$ thin films were spun-coated on the Pt/Ti/SiO$_2$/Si substrates by sol-gel process using alkoxides, and then dried on hot plates from 300 to 450 $^{\circ}C$. The prepared YMnO$_3$ thin films were annealed at 850 $^{\circ}C$ in O$_2$ atmosphere for 1 h. The crystallization of YMnO$_3$ thin films were improved to preferred c-axis orientation and the dielectric characteristics were progressed by increasing the drying temperature. The range of dielectric constant of thin film dried at 450 $^{\circ}C$ is 12.9-22.3 and close to that of YMnO$_3$ single crystal. The ferroelecrtic property of YMnO$_3$ thin film was observed on the YMnO$_3$ films. The maximum remnant polarization (2Pr) of YMnO$_3$ thin films dried at 450 $^{\circ}C$ was about 2.91 ${\mu}$ C/cm2. It was suggested that the drying temperature affect to the initial stage of thin film growth of preferred c-axis orientation.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.71-73
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• 2005

Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(20/80) and PZT(80/20) paste were made and alternately screen-printed on the alumina substrates. The coating and drying procedure was repeated 4 times to form the heterolayered thick films. The thickness of the PZT heterolayered thick films was approximately 60 mm. All PZT thick films showed the typical XRD patterns of a perovskite polycrystalline structure. The relative dielectric constant and the dielectric loss of the PZT thick films sintered at $1050^{\circ}C$ were 1382 and 1.90%, respectively. The remanent polarization and coercive field of the PZT thick films sintered at $1050^{\circ}C$ were $14.15{\mu}C/cm^2$ and 19.13kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.665-668
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• 1999

Thin films of Pb(Zr,Ti)O$_3$ were fabricated by means of the sol-gel spin-coating method and the multi-coating of eight coating numbers. The thin films were dried on the temperature range of 250 ~ 400($^{\circ}C$), whenever the specimens were dried after each coating Processing. The fabricated ferroelectric thin films of lead zirconate titanate(PZT) were treated with the rapid thermal annealing(RTA) at 650($^{\circ}C$),or 3(min), and direct insertion thermal annealing(DITA) at 650($^{\circ}C$), for 30(min). The measured properties of dielectric thin films were following: The good results of dielectric properties were shown by the RTA specimen. The saturation polarization(Ps), remanent polarization(Pr), coercive field (Ec), dielectric constant and dielectric loss factor of the RTA specimen were estimated to be about 27.1[ $\mu$ C/$\textrm{cm}^2$], 13.7[ $\mu$ C/$\textrm{cm}^2$], 55.6(kV/cm), 786 and 6.4(%) respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1283-1288
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• 2004

Metal-ferroelectric-insulator-semiconductor(WFIS) capacitors using rapid thermal annealed LiNbO$_3$/AlN/Si(100) structure were fabricated and demonstrated nonvolatile memory operations. The capacitors on highly doped Si wafer showed hysteresis behavior like a butterfly shape due to the ferroelectric nature of the LiNbO$_3$ films. The typical dielectric constant value of LiNbO$_3$ film in the MFIS device was about 27, The gate leakage current density of the MFIS capacitor was 10$^{-9}$ A/cm$^2$ order at the electric field of 500 kV/cm. The typical measured remnant polarization(2P$_{r}$) and coercive filed(Ec) values were about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively The ferroelectric capacitors showed no polarization degradation up to 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulses of 1 MHz. The switching charges degraded only by 10 % of their initial values after 4 days at room temperature.e.

• Corrosion Science and Technology
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• v.4 no.5
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• pp.191-200
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• 2005

Two azole compounds viz., Imidazole (IM) and 2-Methylimidazole (2-MIM) were studied to investigate their inhibiting action on corrosion of mild steel in phosphoric acid ($H_3PO_4$) solution by mass loss and polarization techniques at 302K-333K. It has been found that the inhibition efficiency of the all inhibitors increased with increase in inhibitor concentration and decreases with increasing temperature and also with increase in acid concentrations. The inhibition efficiency of these compounds showed very good inhibition efficiency. At 0.5% of IM and 2-MIM in 1N and 5N phosphoric acid solution at 302K to 333K for 5 hours immersion period, the inhibition efficiency of 2-Methylimidazole found to be higher than Imidazole. The adsorption of these compounds on the mild steel surface from the acids has been found to obey Tempkin's adsorption isotherm. The values of activation energy ($E{\alpha}$) and free energy of adsorption (${\Delta}G{\alpha}ds$) were also calculated. The plots of log $W_f$ against time (days) at 302K give straight line which suggested that it obeys first order kinetics and also calculate the rate constant k and half life time $t_{1/2}$. Surface was analyzed by SEM and FITR spectroscopy.