• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.857-860
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• 2004

Cubic CdS thin film with the strongest XRD peak (111) at diffraction angle $(\theta)$ of 26.5 was well made at substrate temperature of $150^{\circ}C$. At that time, lattice constant a of the thin film was $5.79{\AA}$, grain size of that was more over ${\mu}m$ and it's resistivity was over $10^3{\Omega}cm$. And the peak of diffraction intensityat miller index (111) of CdS:In thin film with dopant In of 1 atom% was shown higher about 20 % than undoped CdS thin film. Also, CdS:In thin film had in part hexagonal structure among cubic structure as secondary phase. Lattice constant of a and grain size of secondary phase of the film with dopant In of 1 atom% was $5.81{\AA}$ and around $1{\mu}m$ respectively The lowest resistivity of $5.1{\times}10^{-3}{\Omega}cm$ was appeared on dopant In of 1.5 atom%. Optical band gap of undoped CdS thin film was 2.43 eV and CdS:In thin film with dopant In of 0.5 atom% had the largest band gap 2.49 eV.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1605-1608
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• 2004

Single phase $CuInS_2$ thin film with a highest diffraction peak (112) at a diffraction angle ($2{\theta}$) of 27.7$^{\circ}$ was well made by SEL method at annealing temperature of 250 $^{\circ}C$ and annealing hour of 60 min in vacuum of $10^{-3}$ Torr or in S ambience for an hour. And the peak of diffraction intensity at miller index (112) of $CuInS_2$ thin film annealed in S ambience was shown a little higher about 11 % than in only vacuum. Single phase $CuInS_2$ thin films were appeared from 0.85 to 1.26 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated in S ambience were all over 50 atom%. Also when Cu/In composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). And lattice constant a and grain size of the thin film in S ambience were appeared a little larger than those in only vacuum. The largest lattice constant of a and grain size of $CuInS_2$ thin film in S ambience was 5.63 ${\AA}$ and 1.2 ${\mu}$m respectively. And the films in S ambience were all p-conduction type with resistivities of around $10^{-1}{\Omega}cm$.

• 반도체디스플레이기술학회지
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• 제5권2호
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• pp.1-5
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• 2006

The GaN thin film on the 8 periods InGaN/GaN multi-quantum well structure was grown on the sapphire substrate using metal-organic chemical vapor deposition. The nano-scaled triangular-lattice holes with the diameter of 150 nm were patterned on a polymethylmethacrylate blocking film using an electron beam nano-lithography system. The thin slab and two-dimensional photonic crystals with the thickness of 28 nm were fabricated on the GaN layer for the blue light diffraction sources. The photonic crystal with the lattice parameter of 460 nm enhances spectral intensity of photoluminescence indicating that the photonic crystals provides the source of nano-diffraction for the blue light of the 450-nm wavelength.

• 대한화학회지
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• 제57권2호
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• pp.204-209
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• 2013

We calculate in this study the pressure dependence of the frequencies for the Raman modes of A ($A_g$), B ($A_g$, $B_{2g}$) and C ($B_{1g}$, $B_{3g}$) at constant temperatures of 274 and 294K (room temperature) for the solid phase I of benzene. Using the mode Gr$\ddot{u}$neisen parameter of each lattice mode, which correlates the pressure dependence of the crystal volume and the frequency, the Raman frequencies of those modes are computed for phase I of benzene. Our results show that the Raman frequencies of the three lattice modes (A, B and C) increase as the pressure increases, as expected. The temperature effect on the Raman frequencies is not significant, which can be explained by the experimental measurements.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.101-102
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• 2009

SGOI MOSFETs with various Ge mole fractions were fabricated and compared to the SOI MOSFET. SGOI MOSFETs have a lager drain current and higher effective mobility than the SOI MOSFET as increased Ge mole fractions. The lattice constant difference causes lattice mismatch between the SiGe layer and the top-Si layer during the top-Si layer growth. However, SGOI MOSFETs have a lager leakage current at subthreshold region. Also, leakage current at subthreshold region increased with Ge mole fractions. This is attributable to the crystalline defects due to the lattice mismatch between the SiGe layer and the top-Si layer.

• Journal of the Optical Society of Korea
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• 제7권1호
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• pp.34-37
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• 2003

Outside the photonic bandgap of two-dimensional square lattice photonic crystals, we found spectral regions in which light coupling from the air is forbidden. This uncoupling spectral region originates from the anisotropy of the photonic crystals. A two-dimensional square photonic crystal has a complete total bandgap (forbidden region in both TE and TM modes) with hole radius ranging from 0.15 to 0.45 times a lattice constant.

• 한국진공학회지
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• 제2권1호
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• pp.65-72
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• 1993

MgGa2-xInxSe4 single crystal을 bridgman technique로 성장시켰다. 성장된 단결정은 rhombohedral 구조를 가지고 있었으며, lattice constant는 a=3.950~4.070$\AA$, c=38.89~39.50$\AA$으로 주어졌고, 높은 photoconductivity를 가지고 있었다. 이 단결정의 energy gap은 2.20~1.90eV이었고, photoconductivity spectrum에 peak의 energy는 2.31~2.01eV로 주어졌으며, photoconductivity의 time constant는 0.24~0.34sec로 주어졌다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권11호
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• pp.539-543
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• 2001

ln this paper, the $Sr_{l-x}Ca_xTiO_3(0\leqx\leq0.2)-based$ grain boundary layer ceramics were fabricated to measure dielectric properties with the sintering temperature and the thermal treatment time. The sintering temperature and time were $1420~15206{\circ}C$, 4hours, and the thermal treatment temperature and time of the specimen were $l150^{\circ}C$, 1, 2, 3hours, respectively. The structural and the dielectric properties were investigated by SEM, X-ray, HP4194A and K6517. The average grain size was increased with increasing the sintering temperature, but it decreased up to 15mo1% with increasing content of Ca. X-ray diffraction analysis results showed that all specimens were the cubic structure, and the main peaks were moved to right and the lattice constant were decreased with increasing content of Ca. The appropriate thermal treatment time and temperature of CuO to obtain dielectric properties of $\varepsilon_r>50000,\; tan \delta<0.05\; and \;\DeltaC<\pm10%$ were 2hrs and $l150^{\circ}C$, respectively.

• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.780-786
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• 1995

For the execution of RIETAN program adopting Rietveld Analysis Method, the sample superconductor is made according to the solid state synthesis method at 920.deg. C for 24hrs, and was examined for the optimization of parameters needed to analyze Rietveld method with the input of the measured pattern data after measuring the pattern resulted from the X-ray diffraction. It was proven that the lattice constant of the superconductor which was consisted of Pmmm orthorhombic crystal structure in the analyzed space group correspond to the presented theoretical lattice constant a=3.8887(8).angs., b=3.8238(4).angs., c=11.7079.angs.. Therefore, it was examined and confin-ned that the R factor, which was compensated after analyzing the structure of superconductor resulted from this experimented data with the computer simulation, was refined to $R_{wp}$=8.83[%], $R_{P}$=6.47[%], $R_{I}$=10.08[%], $R_{F}$=7.19[%], $R_{E}$=3.76[%]. On the basis of these experimental data, the significant parameter such as the scale factor(S) and the zero point shift(Z) and FWHM value(U,V,W) were optimized as follows; S=2.0827E-3, Z=0.2146, U=4.2761E-2, V=1.7983E-2, and W=2.6768E-2.2.2.2.2.2.

• 한국세라믹학회지
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• 제53권4호
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• pp.463-467
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• 2016

$Si^{4+}-N^{3-}$ was incorporated into $Ce^{3+}-doped$ lutetium aluminum garnet ($Lu_{2.965}Ce_{0.035}Al_5O_{12}$, $LuAG:Ce^{3+}$) lattices, resulting in the formation of $Lu_{2.965}Ce_{0.035}Al_{5-x}Si_xO_{12-x}N_x$ [(Lu,Ce)AG:xSN]. For x = 0-0.25, the synthesized powders consisted of the LuAG single phase, and the lattice constant decreased owing to the smaller $Si^{4+}$ ions. However, for x > 0.25, a small amount of unknown impurity phases was observed, and the lattice constant increased. Under 450 nm excitation, the PL spectrum of $LuAG:Ce^{3+}$ exhibited the green band, peaking at 505 nm. The incorporation of $Si^{4+}-N^{3-}$ into the $Al^{3+}-O^{2-}$ sites of $LuAG:Ce^{3+}$ led to a red-shift of the emission peak wavelength from 505 to 570 nm with increasing x. Corresponding CIE chromaticity coordinates varied from the green to yellow regions. These behaviors were discussed based on the modification of the $5d^1$ split levels and crystal field surroundings of $Ce^{3+}$, which arose from the Ce-(O,N)8 bonds.