• Transactions of the Korean Society of Mechanical Engineers B
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• v.28 no.7
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• pp.771-779
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• 2004

Unsteady behavior of the early wake in the viscous flow field past an impulsively started semicircular cylinder is studied numerically. In this paper, we propose the hybrid diffusion scheme to simulate dynamic characteristics of wake such as a fishtail-like flapping and an alternate vortex-shedding more accurately. This diffusion scheme based on particle strength exchange is mixed with the stochastic nature of random walk method. Also, the viscous splitting algorithm which calculates convective and diffusion terms successively is applied in order to handle random walk method effectively. Consequently, the early behavior of wake due to the breakdown of symmetrical vortici balance is more practically simulated with the vortex particle method.

• ETRI Journal
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• v.36 no.3
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• pp.490-497
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• 2014

The market performance of WiBro in Korea has not been as expected, and its rapid diffusion in the near future is unlikely owing to the existence of competing services. There has been little research on the factors affecting this low market diffusion. This study is based on an analytical framework in which a lack of service capability and the insufficiency of service-related activities have resulted in the current poor market performance. An expert survey was conducted on WiBro specialists and verified using the analytical hierarchy process method. The result of this analysis is as follows: underinvestment in network deployment and marketing, insufficient promotional policies, and a shortage of service capabilities are to be analyzed as the main causes of WiBro's low market diffusion.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.13 no.2
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• pp.161-167
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• 2009

An animated ink diffusion on paper is simulated through making a multiple sessions of random walks. The simulated random walk is built and validated against the diffusion model, then animated by varying the intensity thresholds of the accumulated visit counts on each pixels on an image. Two different random walk models are built one of which is a free random walk in that the walker has exactly same probability to move in any four or eight directions in each step. The other is a biased random walk that has a higher chance to go to a pixel that has more similar intensity value. The latter can be used to simulate an ink diffusion radiating through different texture of paper.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.41.2-41.2
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.

• Electrical & Electronic Materials
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• v.7 no.4
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• pp.281-288
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• 1994

According to spread volume of B(BiPbCuO) layer, composition ratio and each stage of sintering process, we studied stability of high Tc superconductor phase and generation and growth movement of superconducting phase. The dual layer composed of SrCaCuO and BiPbCuO compound were prepared to develop the Bi-2223 superconductor[108K] through interaction and diffusion during sintering process. The dual layer samples were sintered at 830.deg. C for 0-210 hours. From the result, the optimum conditions were : spread volume(A:B=1:0.6), sintering time(210h) and composition ratio(A:S $r_{2}$C $a_{2}$C $u_{2}$- $O_{x}$, B:B $i_{1.9}$P $b_{0.5}$C $u_{3}$ $O_{y}$) at 830.deg. C.. C.C.C.

• Transactions on Electrical and Electronic Materials
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• v.2 no.2
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• pp.32-36
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• 2001

A new solid source for low temperature diffusion into silicon was developed. The source wafer consists of an “active” compound, which is sol-gel prepared phosphosilicate glass-ceramics containing 56% P$_2$O$\sub$5/, embedded in a skeletal foam-like, inert substrate. Phosphorus diffusion from the new solid sources at low temperatures (800-875$^{\circ}C$) produced reprodecible sheet resistances and shallow junctions. From a series of one hour doping runs, the life time of the phosphosilicate source was determined to be over 40 hours. The effective diffusion coefficient of phosphorus into silicon and the corresponding activation energy at 850$^{\circ}C$ were determined to be 7.5${\times}$10$\^$-15/ $\textrm{cm}^2$/sec and ∼3.9 eV, respectively.

• Journal of the Korean institute of surface engineering
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• v.40 no.5
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• pp.214-218
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• 2007

The objective of this study is to evaluate the diffusion behavior of Al and Si from a coatings in the microstucture of Fe-Si steel. Steel samples deposited with Al-Si alloy are prepared by ion plating process, followed by annealing treatments for diffusion at $1050^{\circ}C$. Several intermetallic phases are found in the coatings and they are identified as Fe-Al and an orderd Fe-Si compounds. Series of different concentration profiles through the sample have been obtained and Si content reaches about 5 wt% in case of 90 minutes of diffusion time.

• Journal of Korea Society of Industrial Information Systems
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• v.14 no.4
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• pp.101-115
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• 2009

This study analyzed the diffusion process of digital convergence products focused on camera phon to compare the traditional adoption-diffusion model with use-diffusion model proposed by Shih and Venkatesh(2004). The results suggested that observability, perceived usefulness, innovativeness, relative advantage have effects on the intention of repurchase in the adoption-diffusion model. On the other hand, the intention of repurchase has been affected by technological sophistication, satisfaction, innovativeness, relative advantage in the use-diffusion model. These results imply that the traditional adoption-diffusion model could be applied to the cases of the digital convergence products. In addition, the results also show that the use-diffusion model is superior to the traditional model in analyzing the diffusion of digital convergence products.

• Communications of the Korean Mathematical Society
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• v.12 no.2
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• pp.419-425
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• 1997

Consider a d-dimensional domain D that has finite Lebesque measure and a Dirichlet form which has discontinuous coefficient. Then the stationary Markov process corresponding to the given Dirichlet form is a semimartingale under suitable condition for D and the coefficient.

• Advances in concrete construction
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• v.4 no.4
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• pp.305-317
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• 2016

Porous materials such as concrete could be subjected to aggressive ions transport. Durability of cement paste is extremely depended on water and ions penetration into its interior sections. These ions transport could lead different damages depending on reactivity of ions, their concentrations and diffusion coefficients. In this paper, chloride diffusion process in cement hydrates is simulated at atomistic scale using molecular dynamics. Most important phase of cement hydrates is calcium silicate hydrate (C-S-H). Tobermorite, one of the most famous crystal analogues of C-S-H, is used as substrate in the simulation model. To conduct simulation, a nanopore is considered in the middle of simulation cell to place water molecules and aggressive ions. Different chloride salts are considered in models to find out which one is better for calculation of the transport properties. Diffusion coefficients of water molecules and chloride ions are calculated and validated with existing analytical and experimental works. There are relatively good agreements among simulation outputs and experimental results.