• The Korean Journal of Ceramics
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• v.6 no.4
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• pp.380-384
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• 2000

Crystal structure of $Ba_5-5X$Y$_10/3$Nb$_10$O$_30$ was tried to determine by Rietveld analysis using powder X-ray diffraction data. This compound has tetragonal tungsten bronze (TTB) structure with general formula, (Al)$_2$(A2)$_4$(B1)$_2$(B2)$_8$(O1)$_8$(O2)$_8$(O3)$_4$(O4)$_2$(O5)$_4$(O6)$_4$. However, it was difficult to determine the distribution of Ba and Y in Al and A2 sites by the analysis only. Combination of Rietveld analysis and site potentials calculation as well as lattice energy calculations helped to determine the distribution. As the result, it was clarified that $Ba^2+$ cations occupy A2 (pentagonal tunnel site) and $Y^3+$ cations occupy Al (cubic site). The distribution of cations at each site coincides with the distribution estimated by the difference of ionic radii. This supports the formation condition of TTB which was proposed in our previous report. $Ba_5-5X$Y$_10X/3$Nb$_10$O$_30$ shows ferroelectric characteristics. In this compound, remanent polarization decreases slightly with the composition X. On the other hand, the result of crystal structure determination reveals that atomic positions along c-axis for A1, A2, B1 and B2 cations are also decreased with the composition X. This would suggest that the dependence of remanent polarization on composition X is derived by the dependence of atomic coordinates on composition X.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1167-1173
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• 2001

The tetragonal tungsten bronze type of Sr$_{x}Ba_{1-x}Nb_{2}O_{6}$(SBN) (0.3$\le$x$\ge$0.7) ceramics was synthesized by the solid state reaction method, and the dielectric properties of SBN ceramics as a function of Sr/Ba ratio were examined. With increasing Sr/Ba ratio in SBN ceramics, the Curie temperature decreased and the maximum dielectric constant at the Curie temperature increased. The relaxor behavior of the SBN ceramics as a function of Sr/Ba ratio was quantitatively evaluated. More relaxor behavior of dielectric characteristics was observed as the ratio of Sr/Ba increased. The experimental results are explained with a viewpoint of crystallography of tungsten bronze structured SBN ceramics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.739-743
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• 2003

[ $Ba_2NaNb_5O_{15}$ ], hereafter BNN, thin films are attractive candidates for nonvolatile memory and electro-optic devices. In the present work, thin films that have different contents of Ba, Nb and Na have been prepared by H-MOD technique on silicon and Pt substrates. XRD and SEM were used to investigate the phase evolution behavior and the microstructure of the films. It was found that the films of about 500nm thick were crack-free and uniform in microstructure. Nb content strongly influenced the phase formation of the films, where unwanted phases were always formed at the stoichiometric BNN composition. However, the unwanted phases decreased with the increase of excess Nb content, and the single phase (tetragonal tungsten bronze structure) BNN thin film was obtained when the niobium content reached some point. From this study, the sub-solidus phase diagram below $850^{\circ}C$ for $BaO-Na_2O-Nb_2O_5$ ternary system is proposed.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.272-275
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• 2000

Starting from the stoichiometric composition of $K_2$CO$_3$: Li$_2$CO$_3$: Nb$_2$O$_5$=3 : 2 : 5 with the mole ratio, $K_3$LiNb$_6$O$_17$ 17/ single crystals were grown using the Czochralski method. Although the starting melt composition corresponds to the $K_3$Li$_2$Nb$_5$O$_15$ crystals, the chemical composition of the as grown crystals appears to be $K_2.95$Li$_1.33$Nb$_6.17$O$_17$ or $K_2.60$Li$_1.17$Nb$_{5.44}$ 5.44/O$_{15}$ which relatively contain fewer Li ions than $K_3$Li$_2$Nb$_5$O$_15$ crystals. We investigated the influence of the deficiency of the Li ions in the tetragonal tungsten bronze structure through the measurements of DE loop, temperature dependent dielectric constant, differential thermal analysis and temperature dependent X-ray diffraction pattern.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.98-102
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• 2003

$Ba_2NaNb_5O_{15}$, hereafter BNN, thin films are attractive candidates for nonvolatile memory and electro-optic devices. In the present work, thin films that have different contents of Ba, Na and Nb have been prepared by H-MOD technique on silicon and Pt substrates. XRD and SEM were used to investigate the phase evolution behavior and the microstructure of the films. It was found that the films of about 450nm thick were crack-free and uniform in microstructure. Nb content strongly influenced the phase formation of the films, where low temperature phase was always formed at the stoichiometric BNN composition. However, the amount of low temperature phase decreased with the increase of excess Nb content, and the single phase (orthorhombic tungsten bronze structure) BNN thin film was obtained at the temperature as low as $750^{\circ}C$ for samples with excess niobium. From this study, the sub-solidus phase diagram below $850^{\circ}C$ for $BaO-Na_2O-Nb_2O_5$ ternary system is proposed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.869-873
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• 2004

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient, piezoelectric, and a photo refractive properties. In this study, SBN60(x=0.6) thin film was manufactured by ion beam sputtering technique. Using the prepared SBN60 target in $Ar/O_2$ atmosphere as-deposited SBN60 thin film on Pt(100)/$TiO_2/SiO_2/Si$ substrate crystallization and orientation behavior as well as electric properties of SBN60 thin film were examined. SBN60 deposition up to $3000{\AA}$ in thickness, SBN60 thin film was heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation was shown primarily along (001) plane from XRD pattern where working pressure was $4.3{\times}10^{-4}$ torr. The deposited layer was uniform, preferred orientatin and crystallization behavior resulted in the change of $O_2$ ratio was observed. In electric propertie of Pt/SBN60/Pt thin film capacitor remnant polarization (2Pr) value was $10{\mu}C/cm^2$, the coercive filed (Ec) 50 kV/cm, and the dielectric constant 615, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.384-392
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• 1997

Potassium lithium niobate(KLN) single crystal for a nonlinear-optic material, which changes the wavelength of lasers, has a ferroelectric tetragonal tungsten bronze structure at room temperature. It has been very hard to get single crystals of good quality due to the cracks during cooling process. In order to investigate the composition change due to the evaporation of solution during the growth, the thermogravimetric analysis was carried out. In atmospheric condition at $1000^{\circ}C$ which is about $10^{\circ}C$ higher than the crystal growing temperature, the weight change was negligible amount of $1.46{\times}10^{-5}$g/($\textrm{cm}^2$hr). By using both the Pt plate as the nucleation site and the slow cooling method with temperature fluctuation, KLN single crystal of good quality of size 1 cm could be obtained. The phase transition temperature was $490^{\circ}C$, which was higher than that reported by other researchers of the other composition. The optical anisotropy due to the absorption of OH-band exists in the range of IR.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.960-964
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• 2004

[ $Ba_2NaNb_5O_{15}$ ](BNN) thin films have been prepared by the ion beam sputter deposition (IBSD) method on Pt coated Si substrate at temperature as low as $600^{\circ}C$ XRD, SEM were used to investigate the crystallization and microstructure of the films. It was found that the films were crack-free and uniform in microstructure. The electric properties of thin films were carried out by observation of D-E hysteresis loop, dielectric constant and leakage current. It was found the deposition rate strongly influenced the phase formation of the films, where the phase of $BaNb_2O_6$ was always formed when the deposition rate was high. However, the single phase (tungsten bronze structure ) BNN thin film was obtained with the deposition rate as low as $22{\AA}/min$. The remanent polarization Pr and dielectric constant are about 1-2 ${\mu}C/cm^2$ and $100\sim200$, respectively. It was also founded the electric properties of thin films were influenced by the deposition rate. The Pr and dielectric constant of films increased with the decrease of deposition rate. The effects of annealing temperature and annealing time to the crystallization behavior of films were studied. The crystallization of thin film started at about $600^{\circ}C$. The adequate crystallization was gotten at the temperature of $650^{\circ}C$ when the annealing time is 0.5 hour or at the temperature of $600^{\circ}C$ when the annealing time is long as 6 hours.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.133-135
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• 2006

SBN60 and SBN60/30 thin films were deposited by ion beam sputtering technique. Using the ceramic target of the same composition and Pt(100)/$TiO_2$/$SiO_2$/Si or Pt(111)/Ti/$SiO_2$/Si substrate, crystallization and orientation behavior as well as electric properties of the films were examined, Thickness was controlled to $3000{\AA}$ and the films were heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation and crystallization behavior were observed which showed the dependence on processing condition($O_2$/Ar ratio, substrate temp, annealing temp...).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.393-394
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• 2005

SBN25 박막을 씨앗층으로 사용하여 이온빔으로 증착한 SBN60/SBN25 다층박막에 대하여 결정화 및 배향 특성을 고찰하였다. 기판은 Pt(111)/TiO2/SiO2/Si(100) 웨이퍼 (Pt 두께 200nm)를 사용하였으며, 약 3000${\AA}$으로 증착한후 650~$750^{\circ}C$에서 후열처리를 하였다. 제작된 박막의 증착조건 및 열처리 조건에 따른 결정화특성 변화에 대하여 연구하였으며, SBN 박막을 MFM 구조의 박막커패시터로 제조하여 강유전특성을 측정하였다.