Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication and Crystallization Behavior of BNN Thin Films by H-MOD Process

  • Lou, Jun-Hui (Department of Materials Science and Engineering, Yeungnam University) ;
  • Lee, Dong-Gun (Department of Materials Science and Engineering, Yeungnam University) ;
  • Lee, Hee-Young (Department of Materials Science and Engineering, Yeungnam University) ;
  • Lee, Joon-Hyung (Department of Inorganic Materials Engineering, Keyungpook National University) ;
  • Cho, Sang-Hee (Department of Inorganic Materials Engineering, Keyungpook National University)
  • Published : 2003.07.10
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Abstract

[ $Ba_2NaNb_5O_{15}$ ], hereafter BNN, thin films are attractive candidates for nonvolatile memory and electro-optic devices. In the present work, thin films that have different contents of Ba, Nb and Na have been prepared by H-MOD technique on silicon and Pt substrates. XRD and SEM were used to investigate the phase evolution behavior and the microstructure of the films. It was found that the films of about 500nm thick were crack-free and uniform in microstructure. Nb content strongly influenced the phase formation of the films, where unwanted phases were always formed at the stoichiometric BNN composition. However, the unwanted phases decreased with the increase of excess Nb content, and the single phase (tetragonal tungsten bronze structure) BNN thin film was obtained when the niobium content reached some point. From this study, the sub-solidus phase diagram below $850^{\circ}C$ for $BaO-Na_2O-Nb_2O_5$ ternary system is proposed.

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