• Electrical & Electronic Materials
• /
• v.10 no.7
• /
• pp.674-681
• /
• 1997

Ternary compound ceramics, (1-y-x) BaTiO$_3$-y SrTiO$_3$-x MgTiO$_3$(0.00 x 0.20), were fabricated by the conventional ceramic process. The structural and dielectric properties of specimens were investigated while varying the composition and sintering temperature(1,200~1,45$0^{\circ}C$) in order to obtain the optimum condition of capacitor. As is well known, Curie temperature(T$_{c}$) of high dielectric-based ceramic(BaTiO$_3$) was shifted and temperature of capacitance was decreased in according to increase of solid solution with (Sr, Mg)TiO$_3$. As a result, a suitable condition of compound rate for capacitor was obtained such as the BSM-11(0.8BaTiO$_3$-0.1SrTiO$_3$-0.1MgTiO$_3$), and sintering temperature was sintered at 1,25$0^{\circ}C$ for two hours. In this case, dielectric constant<1,300, dielectric loss(tan$\delta$)<0.03, and the variation rate of capacitance had less than 3% in the range -10~7$0^{\circ}C$.>.

• Journal of Korea Foundry Society
• /
• v.20 no.2
• /
• pp.116-121
• /
• 2000

Interfacial reaction and mechanical properties between Sn-Zn-X ternary alloys(X : 3wt.%In, 4wt.%Bi) and Cu-substrate were studied. Cu/solder joints were subjected to aging treatments for up to 50days to see interfacial reaction at $100^{\circ}C$ and then were examined changes of microstructure and interfacial compound by optical microscopy, SEM and EDS. Cu/solder joints were aged to 30days and then loaded to failure at cross head speed of 0.3 mm $min^{-1}$ to measure tensile strength. According to the results of the solderability test, additions of In and Bi in the Sn-9wt.%Zn solder improve the wetting characteristics of the alloy and lower the melting temperature. Through the EDS and XRD analysis of Cu/Sn-9wt.%Zn solder joint, it was concluded that the intermetallic compound was the ${\gamma}-Cu_5Zn_8$ phase. Cu-Zn intermetallics at Cu/solder interfaces played an important role in both the microstructure evolution and failure of solder joints. Cu/solder joint strength was decreased by aging treatment, and those phenomenon was closely related to the thickening of intermetallic layer at Cu/solder joints.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1989.06a
• /
• pp.70-73
• /
• 1989

(1-x-y)Pb($Zn_{1/3}Nb_{2/3})O_3-Ba(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3(0.12{\leq}x{\leq}0.21, 0.24{\leq}y{\leq}0.33$) ternary compound ceramics were fabricated by the mixed oxide method. The sintering temperature and time were 1050 [$^{\circ}C$], 2[hr]. Morphotropic phase boundary region was chosen for the composition. 0.55 PZN-0.21 BZN-0.24 PT specimen had the highest value of relative dielectric constants, 5353. The curie temperature of specimens were increased linearly with PT content. Near the morphotropic phase boundary, electro-mechanical coupoling factor and mechanical quality factor of the specimens had the highest values.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1989.06a
• /
• pp.74-76
• /
• 1989

x Pb($Sb_{1/2}Sn_{1/2}O_3-PbTiO_3-PbZrO_30.05{\leq}x{\leq}0.25$) ternary compound ceramics were fabricated by the mixed oxide method. The sintering temperature and time were 1200-1270[$^{\circ}C$], 2 hour, respectively. Increasing the PSS contents, the transition temperatures were decreased. The relative dielectric constant and Curie temperature of the 0.25 PSS-0.25 PT-0.5 PZ specimens were 450, 220[$^{\circ}C$]. The Pyroelectric coefficient of the 0.25PSS-0.25PT-0.50 PZ specimen was $5.20{\times}10^4$[C$\textrm{cm}^2$K].

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.9 no.2
• /
• pp.117-123
• /
• 2009

$Pb_{x}Cd_{1-x}S$ films are prepared in the composition range of 0.05${\leq}x{\leq}$0.25, using a chemical bath deposition growth technique under optimum conditions amide at realizing good photo response. The x-ray diffraction results show that the films are of PbS-CdS composite with individual CdS and PbS planes. The films exhibit two direct band gaps, 2.4 eV attributed to CdS, while the other varies continuously from 2.4 eV to 1.3 eV. The films surface morphology is smooth with crystallite, whose grain size increases with increasing mole fraction (x). The decrease in band gap with increase in lead concentration suggests inter-metallic compound of PbS (Eg=0.41 eV) with CdS (Eg=2.4 eV)

• Proceedings of the KIEE Conference
• /
• 1996.07c
• /
• pp.1516-1519
• /
• 1996

In this paper, a study on the electrical properties of ternary compound ceramics $[(1-y-x)BaTiO_{3}-ySrTiO_{3}-xMgTiO_3]$ fabricated 7 samples with each mol[%] by using the mixed oxide method. In this case, the sintering temperature were at $1,250[^{\circ}C]$ for 2[hr]. Also made ceramic capacitors from 7 samples, temperature coefficient of the capacitance and the variation of relative dielectric constants and loss with fixed frequency (1KHZ) were studied. In some ceramic capacitors, has shown very good properties of the dielectric constants and loss. In case of BSM-11 ceramic capacitor, is sure to the commercial capacitor which shows steady properties.

• Journal of the Korean Ceramic Society
• /
• v.37 no.9
• /
• pp.915-920
• /
• 2000

합성과 동시에 소결이 이루어지는 HPCS법을 이용하여 TiB$_2$-W 복합체를 텅스텐의 함량 변화에 다라 제조하여 이 복합체의 미세구조 및 기계적 물성에 대하여 연구하였다. 이 연구 결과, 텅스텐의 함량증가에 따라 삼성분 붕화 화합물인 TiWB$_2$의 상이 증가하였으며, 이 상의 증가에 따라 기계적 물성이 향상되었다. 60 MPa의 압력과 130$0^{\circ}C$, 3000 A에서 소결한 TiB$_2$-30vol% W 복합체에서 상대밀도, 강도, 경도 값은 각각 97.2%, 411.5 MPa, 22.36 GPa로 가장 우수한 물성을 얻을 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1988.10a
• /
• pp.8-11
• /
• 1988

(1-x-y)Pb($Zn_{1/3}Nb_{2/3})0_3-BaTiO_3PbTiO_3(0.05{\leq}x{\leq}0.20, 0.05{\leq}y{\leq}0.15$) ternary compound ceramics were fabricated by the mixed oxide method. The dielectric properties with temperature and frequency of the specimens were investigated. Relative dielectric constants of the specimens were increased with $BaTiO_3$ contents. Increasing the $BaTiO_3$contents, the variation in the relative dielectric constant with frequency, the temperature coefficient of capacitance (TCC) and the dielectric loss were decreased.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.57-57
• /
• 2010

Self assembled $Zn_{x-1}Cd_xS$ nanowires, synthesized on a Indium tin oxide coated glass substrate with low composition of Cd as x=0.09, were fabricated non-precursor via a co-evaporation method using of solid sources of CdS and ZnS. We studies that ZnCdS nanowires are dislocation-free and the single crystalline hexagonal wurtzite structure showed by transmission electron microscopy and selected area electron diffraction pattern. Cathode luminescence spectra showed an near band edge peak at 383nm originated from nanowires at 80K and 300K. Core level spectra of the Cd 3d, Zn 2p and S 2p in the ZnCdS nanorods were obtained by x-ray photoelectron spectroscopy. Prepared ZnCdS nanorods showed different shape with increase of substrate temperature at the growth.

• Bulletin of the Korean Chemical Society
• /
• v.14 no.6
• /
• pp.678-681
• /
• 1993

The new ternary phase $UP_2S_6$ has been prepared and structurally characterized. The compound is isostructural with $ZrP_2S_6$ and $ThP_2S_6$ but is different from $TiP_2S_6$. The structure has been determined by a single crystal X-ray diffraction technique. $UP_2S_6$ crystallizes in the the tetragonal system $({C^2}_{4h}-P4_2/m,\;a=6.797(7)\;{\AA},\;c=9.738(12)\;{\AA})$ with two formula units in the unit cell. The structure can be described in terms of $U^{4+}$ and ${P_2S_6}^{4-}$ ions. This hexathiohypodiphosphate anion $({P_2S_6}^{4-})$ has ideally staggered conformation. The $U^{4+}$ cation is coordinated by 8 sulfur atoms in a slightly distorted dodecahedral geometry (42m). The distribution of sulfur atoms is very well optimized for this geometry.