• 제목/요약/키워드: temperature-compensated

검색결과 209건 처리시간 0.025초

냉동차량을 위한 온도 측정 시스템 (Temperature Measurement System for Refrigerated Vehicle)

  • 임용진;김정환;임준홍
    • 전기전자학회논문지
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    • 제23권1호
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    • pp.159-163
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    • 2019
  • 최근 생활수준의 향상으로 외식문화가 발전하고 있고 온라인과 오프라인으로도 냉동식품의 택배수요가 날로 증가하고 있다. 현재 이러한 식품유통의 대부분은 냉동차량에 의해서 이루어지고 있다. 냉동차량에서 가장 중요한 요소 중에 하나는 정확히 온도를 측정하는 것이다. 기존의 상용 온도 기록 시스템은 일반적으로 온도 센서 모듈을 기록계에 직접 연결하는 형태이다. 이러한 기존의 방법은 전선을 사용하여 기록계에 온도 데이터를 전송하기 때문에 케이블의 길이에 따라 저항 오차를 보상해야한다. 본 논문은 케이블 내의 저항으로 인해 발생하는 오차를 극복하기 위해서 디지털 처리와 CAN (Controller Area Network) 통신을 사용하는 것을 제안한다. 또한 온도 측정의 정확도를 높이기 위해서 백금 센서인 PT-1000을 사용한다.

온라인 굴절계를 이용한 알코올 농도와 측정 (Concentration Measurement of Alcohol Solution Using an On-Line Refractometer)

  • 함태원;김영한
    • 제어로봇시스템학회논문지
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    • 제7권5호
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    • pp.427-431
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    • 2001
  • An on-line refractometer made of easily obtainable materials is built to determine the concentration of an alcohol solution, and its performance is examined by applying to the system of ethanol and water. Since the refractive index and the temperature are measured simultaneously, it is possible to compensate the effect of temperature which is not available with an existing on-line refeactometer. Therefore, it can be implemented in the application of process control. The experimental outcome indicates that the home-made refractometer has satisfactory reproducibility and reasonable accuracy for the industrial application.

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A Methodology of Dual Gate MOSFET Dosimeter with Compensated Temperature Sensitivity

  • Lho, Young-Hwan
    • 전기전자학회논문지
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    • 제15권2호
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    • pp.143-148
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    • 2011
  • MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a $^{60}Co$ ${\gamma}$-radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.

An X-Y Channel Dimming LED Backlight with Temperature Compensation for LCD TVs

  • Oh, Won-Sik;Cho, Dea-Youn;Moon, Gun-Woo
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2008년도 하계학술대회 논문집
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    • pp.335-337
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    • 2008
  • In this paper, an X-Y channel dimming light emitting diode (LED) backlight with temperature compensation for in LCD TVs is proposed. It shows local dimming effects such as reduced power consumption and high dynamic contrast ratio even with much less number of LED drivers than that of the conventional two-dimensional local dimming method. Moreover, the image distortion caused by temperature variation of LED block can be effectively compensated. The validity of the proposed dimming method is verified by simulation and experimental results based on a RGB-LED backlight of a 32-inch LCD TV.

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Erbium 도핑된 p-GaSe 단결정의 홀 효과 특성 (Hall-effect properties of single crystal semiconductor P-GaSe dopes with $Er^{3+}$)

  • 이우선;오금곤;정용호;정창수;손경춘;김남오
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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    • pp.726-728
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    • 1998
  • Optical and electrical properties of GaSe:$Er^{3+}$ single crystals grown by the Bridgeman technique was been investigated by using optical absorption and Hall-effect measurements. The Hall coefficients were measured by using a high impedance electrometer in the temperature range from 360K to 150K. The temperature dependence of hole concentration shows the characteristic of a partially compensated p-type semiconductor. carrier density($N_H$) of GaSe doped with Erbium was measured about $3.25{\times}10^{16}\;[cm^{-3}}$ at temperature 300K, which was high than undoped specimen. Photon energy gap ($E_{gd}$) was measured about 1.7geV.

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팬 모터 구동을 위한 집적화된 홀 센서 IC의 제작 및 특성 (Fabrication and Characteristics of the Integrated Hall Sensor IC For Driving Fan Motors)

  • 이철우
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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    • pp.73-76
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    • 2002
  • In this paper we present an integrated Hail sensor It for fan motors, fabricated in industrial bipolar process. As a discrete Hall sensor and signal processing circuitry In the fan motor system were Integrated into single chip a temperature dependence of Hall sensitivity and Hall offset voltage can be compensated and cancelled by on-chip circuitry. We Propose a novel temperature compensation of Hall sensitivity with negative temperature coefficient (TC) using the differential amplifier gain with Positive TC. After a package of the chip was sealed using a plastic Package 20 Pins, the thermal and magnetic characteristics were investigated. The obtained experimental results are in agreement with analytical predictions and have more excellent performance than\ulcorner conventional the fan motor system using discrete Hall sensor.

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Erbium 도핑된 p-GaSe 단결성의 홀 효과 특성 (Hall-effect Properties of Single Crystal Semiconductor p-GaSe Dopes with $Er^{3+}$)

  • 이우선;김남오;손경춘
    • 한국전기전자재료학회논문지
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    • 제13권1호
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    • pp.1-5
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    • 2000
  • Optical and electrical properties of GaSe:Er\ulcorner single crystals grown by the Bridgenman technique have been investigated by using optical absorption and h\Hall-effect measurement system. The Hall coefficients were mea-sured by using a high impedance electrometer in the temperature range from 360K to 150K. The temperature dependence of hole concentration show the characteristic of a partially compensated p-type semiconductor. Carrier density(N\ulcorner) of GaSe doped with Erbium was measured about 3.25$\times$10\ulcorner [cm\ulcorner] at temperature 300K, which was higher than undoped specimen. Photon energy gap (E\ulcorner) of GaSe:Er\ulcorner specimen was measured about 1.79eV.

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유한요소해석을 이용한 후판 압연공정의 선단부 롤갭 설정연구 (A Study on the roll gap set-up at top-end in plate rolling using finite element analysis)

  • 임홍섭;장정환;최민규;서재형;문영훈
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2009년도 춘계학술대회 논문집
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    • pp.252-255
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    • 2009
  • The roll gap set-up in the finishing mill is one of the most important technologies in the hot plate rolling process. As the target thickness can be obtained by the correct set-up of the roll gap, improving the roll gap set-up technology is very critical for plate thickness accuracy. The main cause of thickness variation in hot plate mills is the non-uniform temperature distribution along the length of the slab. The objective of this study is to adjust the roll gap set-up for the thickness accuracy of plate in hot rolling process considering top-end temperature drop. Therefore this study has concentrated on determining the correct amounts of roll gap to compensate thickness variation due to top-end temperature drop. The off-line simulation of compensated roil gap significantly decreases top-end thickness variation.

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온도보상된 유전체공진기 필터를 이용한 10Gbit/s 클럭추출회로 (10 Gbit/s Timing recovery circuit using temperature compensated dielectric resonantor filter)

  • 송재호;유태환;박문수
    • 전자공학회논문지A
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    • 제33A권4호
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    • pp.78-83
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    • 1996
  • A timing recovery circuit of 10 Gbit/s optical receiver is described. The circuit consists of a passive NRZ-to-PRZ circuit, a dielectric resonator filter (DRF) and a narrow band amplifier, which for the first time adopted a temperature compensation technique using the tempareature characteristics of DR. The experimental results showed an output clock phase variation of less than ${\pm}$6 degree over the operating temperature range form 0$^{\circ}C$ to 75$^{\circ}C$ and measured maximum rms jitters of less than 2 phs with the resonance detunings of up to ${\pm}$10 MHz. These experimental results show that the circuit is a suitable for 10 Gbit/s lightwave transmission system.

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산업용 연축전지의 잔존용량 산출 알고리즘(Algorithm)에 관한 연구 (STUDY ON ALGORITHM FOR CALCULATION REMAINING CAPACITY OF INDUSTRIAL LEAD-ACID BATTERY)

  • 임규령;전순용
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 하계학술대회 논문집 D
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    • pp.2187-2189
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    • 2001
  • The proposed algorithm has produced the rules of relationship between the load voltage, current, discharging electric power and ampere-hours, electric power capacity of battery on the basis of the data. Which were acquired through the battery discharging experiment that is defined by the battery's ambient temperature and various load conditions. Especially, by calculating the parameter of second order polynomial equation relation between the remaining capacity and the electric power, the algorithm is proposed adapting for the discharging pattern. And as the depth of discharging is increasing, the calculation-method of electric power is applied to decrease the accumulated error in the calculation method of capacity accumulation. Also, the proposed algorithm has compensated the temperature considering the capacity change of battery to the temperature.

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