• 한국해양공학회지
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• 제16권5호
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• pp.80-87
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• 2002

In this study, CT specimens were prepared from spring steel(SUP9) which was used in suspension of automobile for room temperature and low temperature service. We got the following characteristics from fatigue crack growth test carried out in the environment of room temperature and low temperature at $25^{\circ}C$, ­3$0^{\circ}C$, ­5$0^{\circ}C$, ­7$0^{\circ}C$ and ­10$0^{\circ}C$ in the range of stress ratio of 0.05 by means of opening mode displacement. The threshold stress intensity factor range ΔKth in the early stage of fatigue crack growth (Region I) and stress intensity factor range ΔK in the stable of fatigue crack growth (Region II) was decreased in proportion to descend temperature. It is assumed that the fatigue resistance characteristics and fracture strength at low temperature and high temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.425-430
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• 2003

A CMOS Voltage-Controlled Oscillator(VCO) for application at temperature stable system is designed. The VCO consists of bandgap voltage reference circuit, comparator, and voltage-to-current converter and the VCO has a temperature stable characteristics. The difference between simulated and calculated values is less than about 5% in output characteristics when the input voltage range is from 1V to 3.25V. The CMOS VCO has error less than about $\pm$0.85% in the temperature range from $-25^{\circ}C$ to $75^{\circ}C$.

• 한국해양공학회:학술대회논문집
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• 한국해양공학회 2001년도 추계학술대회 논문집
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• pp.264-268
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• 2001

In this study, CT specimens were prepared from spring steel(SUP9) processed shot peening which was room temperature, low temperature and high temperature experiment. And we got the following characteristics from fatigue crack growth test carried out in the environment of room, and high temperature at $25^{\circ}C,\; 50^{\circ}C, \;100^{\circ}C,\; 150^{\circ}C,\; and\; 180^{\circ}C$ in the range of stress ratio of 0.05 by means of opening mode displacement. The threshold stress intensity factor range $\DeltaK_{th}$ in the early stage of fatigue crack growth (Region I ) and stress intensity factor range $\Delta$K in the stable of fatigue crack growth (Region II) was decreased in proportion to descend temperature. It assumed that the fatigue resistance characteristics and fracture strength at low temperature and high temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region.

• 한국자동차공학회논문집
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• 제12권1호
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• pp.83-90
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• 2004

In this study, CT specimens were prepared from spring steel(SUP9) processed shot peening which was room temperature and low temperature experiment. And we got the following characteristics from fatigue crack growth test carried out in the environment of room temperature and low temperature at $25^{\circ}C$, $-30^{\circ}C$, $-50^{\circ}C$, $-70^{\circ}C$,$-100^{\circ}C$, and $-150^{\circ}C$, in the range of stress ratio of 0.05 by means of opening mode displacement. The threshold stress intensity factor range ΔKth in the early stage of fatigue crack growth (Region I)was increased but stress intensity factor range ΔK in the stable of fatigue crack growth (Region II) was decreased in proportion to decrease temperature. It is assumed that the fatigue resistance characteristics and fracture strength at low temperature and high temperature is considerably higher than that of room temperature in the early stage and stable of fatigue crack growth region.

• Journal of information and communication convergence engineering
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• 제7권2호
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• pp.215-218
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• 2009

In this paper, temperature stable current and voltage references using simple CMOS bias circuit are proposed. To obtain temperature stable characteristics of bias circuit a bandgap reference concept is used in a conventional circuit. The parasitic bipolar transistors or MOS transistors having different threshold voltage are required in a bandgap reference. Thereby the chip area increase or the extra CMOS process is required compared to a standard CMOS process. The proposed reference circuit can be integrated on a single chip by a standard CMOS process without the extra CMOS process. From the simulation results, the reference current variation is less than ${\pm}$0.44% over a temperature range from - $20^{\circ}C$ to $80^{\circ}C$. And the voltage variation is from - 0.02% to 0.1%.

• 한국정보통신학회논문지
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• 제16권4호
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• pp.799-804
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• 2012

시간 정보를 디지털 정보로 변환하기 위한 아날로그 지연소자를 사용하는 시간-디지털 변환회로를 설계하였다. 설계된 회로는 동작 온도가 변화하더라도 안정된 출력을 얻을 수 있도록 설계하였으며, HSPICE 시뮬레이션을 통하여 동적을 확인하였다. 설계된 지연소자는 온도가 $-20^{\circ}C$에서 $70^{\circ}C$까지 변화할 때 상온에 비해 -0.18%-0.126%의 지연시간 변화율을 보였다. 그리고 이를 이용하는 시간-디지털 변환회로에서 온도가 $-20^{\circ}C$에서 $70^{\circ}C$까지 변화하고 디지털 출력 값이 15가 되었을 때의 시간을 비교하면, 상온에 비하여 -0.18%에서 0.12%의 시간차를 보였다. 그러나 온도 변화에 안정화되지 않은 시간-디지털 변환회로의 경우 상온에 비하여 -1.09%에서 1.28%의 시간차를 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.325-329
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• 1998

In this paper, the (Sr$_{1-x}$ Ca$_{x}$)TiO$_3$(SCT) thin films were deposited at various substrate temperature using RF magnetron sputtering method on optimized Pt-coated electrodes (Pt/TiN/SiO$_2$/Si). An influence of substrate temperature and annealing temperature on the structural and dielectric properties are investigated. The substrate temperature changed from 100[$^{\circ}C$] to 500[$^{\circ}C$] and crystalline SCT thin films were deposited abode 400[$^{\circ}C$]. All thin films had (111) preferred orientation, the (100) oriented films were obtained at the substrate temperature above 400[$^{\circ}C$]. The dielectric constant changes almost linearly in the temperature region of -80~+90[$^{\circ}C$], the temperature characteristics of the dielectric loss exhibited a stable value within 0.1, then not affected by substitutional contents. The capacitance characteristics appears a stable value within $\pm$5[%].

• 한국안전학회지
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• 제18권3호
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• pp.1-7
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• 2003

In this study, CT specimens were prepared from spring steel(SPS5) processed shot peening. The fatigue crack growth tests were carried out in the environment of the room temperature md low temperature at $25^{\circ}C$, $-30^{\circ}C$, $-50^{\circ}C$, $-70^{\circ}C$ $-100^{\circ}C$ and $-150^{\circ}C$ in the range of stress ratio of 0.05 by means of opening mode displacement. The threshold stress intensity factor range ΔKth in the early stage of fatigue crack growth (Region I) and stress intensity factor range $\Delta$K in the stable of fatigue crack growth (Region II) were decreased in proportion to descend temperature. It was shown that the fatigue resistance characteristics and fracture strength at low temperature are considerable higher than those of mom temperature in the early stage and stable of fatigue crack growth region.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2011년도 춘계학술대회
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• pp.671-672
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• 2011

지연소자를 이용하여 시간정보를 디지털 정보로 변환하는 회로를 설계하였다. 지연소자로는 아날로그 회로 혹은 디지털 회로로 구성할 수 있으나, 아날로그 지연소자의 경우 디지털 지연소자에 비해 공정 변화에 따른 신뢰성 면에서 우수한 특성을 가지므로 본 논문에서는 전류원 회로와 인버터를 이용하여 아날로그 형태로 지연소자를 구성하였다. 설계되어진 회로는 동작온도가 $-20^{\circ}C$에서 $70^{\circ}C$까지 변화하더라도 출력 특성의 변화가 없도록 설계되어졌으며, HSPICE 시물레이션을 이용하여 동작을 확인하였다.

• Journal of Advanced Marine Engineering and Technology
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• 제25권6호
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• pp.1228-1236
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• 2001

In this study, CT specimens were prepared from ASTH A5l6 steel which was used for pressure vessel plates for moderate and lower temperature service. And we got the fellowing characteristics from fatigue crack growth test carried out in the environment of room and low temperature at $25^{\circ}C$ , $-30^{\circ}C$, $-60^{\circ}C$, $-80^{\circ}C$, $-100^{\circ}C$ and $-120^{\circ}C$ and in the range of stress ratio of 0.1, 0.3 by means of opening mode displacement. At the constant stress ratio, the Threshold stress intensity factor range ΔAKth in the early stage of fatigue crack growth (Region I) and stress intensity factor range $\DeltaK$ in the stable of fatigue crack growth (Region II) was increased in proportion to descend temperature. It assumed that the fatigue resistance characteristics and fracture strength at low temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region. The straight line slope relation of logarithm da/dN-$\Delta$K in Region II that is, the fatigue clack growth exponent m increased with descending temperature at the constant stress ratio. It assumed that the fatigue crack growth rate da/dN is rapid in proportion to descend temperature in Region II and the cryogenic-brittleness greatly affect a material with decreasing temperature.