• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.37 no.6
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• pp.571-579
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• 2009

For the flow analysis of reactive compressible media involving energetic materials and metallic confinements, a Hydro-SCCM (Shock Compression of Condensed Matter) tool is developed for handling multi-physics shock analysis of energetics and inerts. The highly energetic flows give rise to the strong non-linear shock waves and the high strain rate deformation of compressible boundaries at high pressure and temperature. For handling the large gradients associated with these complex flows in the condensed phase as well as in the reactive gaseous phase, a new Eulerian multi-fluid method is formulated. Mathematical formulation of explosive dynamics involving condensed matter is explained with an emphasis on validating and application of hydro-SCCM to a series of problems of high speed multimaterial dynamics in nature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.18-22
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• 2006

Epitaxial aluminum nitride films on 6H-SiC (0001) were fabricated using reactive RF magnetron sputtering and post-deposition rapid thermal annealing. The electrical properties of AIN films depending on film thickness and measurement temperature have been observed. Full width at half maximum of AIN (0002) was $0.1204^{\circ}$ (about 430 arcsec) X-ray rocking curve results. The equivalent oxide thickness (EOT) of AIN film was estimated as about 10 nm and the leakage current density was within the order of $10^{-8} 4/cm^2$. The dielectric constant of AIN film estimated from the accumulation region of C-V curve measured at $300^{\circ}C$ was 8.3. The dynamic dielectric constant was obtained as 5.1 from J vs. 1/T plots at the temperature ranging from R.T. to $300^{\circ}C$ From above, estimation temperature dependance of the electrical properties of Al/AIN/SiC MIS devices was affirmed and useful data compilation for the reliabilities of SiC MIS is expected.

• Korean Journal of Materials Research
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• v.4 no.3
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• pp.280-286
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• 1994

As-grown $YBa_2Cu_3O_{7-x}$ films on MgO(100)substrates were prepated by a reactive co-evaporation method, and effects of activated oxygen plasma on the crystallinity and superconductivity at substrate temperature ranging from $450^{\circ}C$ to $590^{\circ}C$ were investigated. The film deposited under the activated oxygen plasma at the substrate temperature of $590^{\circ}C$ had a single crystal phase. Whereas, when films were deposited under only oxygen gas, they were not in perfect single crystal phase but with slight polycrystalline nature. When the substrate temperature was $590^{\circ}C$, $Tc_{zero}$'s were 83K and 80K for films with and without activated oxygen plasma, respectively. The critical temperature, the crystal structure and the surface morphology of as-grown films were found to be insensitive to the activated oxygen plasma which is introduced during deposition instead of oxygen gas, but the crystalline quality was improved somewhat by the introduction by the introduction of actvated oxygen plasma.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.848-852
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• 2008

Characteristics of microcrystalline-silicon thin-films deposited by plasma-enhanced chemical-vapor deposition (PECVD) method were studied. There were optimum values of RF power density and $H_2$ dilution ratio $(H_2/(SiH_4+H_2))$; maximum grain size of about 35 nm was obtained at substrate temperature of 250 $^{\circ}C$ with RF power density of 1.1 W/$cm^2$ and $H_2$ dilution ratio of 0.91. Larger grain was obtained with higher substrate temperature up to 350 $^{\circ}C$. Grain size dependence on RF power density and $H_2$ dilution ratio could be explained by etching effects of hydrogen ions and changes of species of reactive precursors on growing surface. Surface-mobility activation of reactive precursors by temperature could be a reason of grain-size dependence on the substrate temperature. Microcrystalline-silicon thin-films that could be used for flat-panel electronics such as active-matrix organic-light-emitting-diodes are expected to be fabricated successfully using these results.

• Bulletin of the Korean Chemical Society
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• v.20 no.10
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• pp.1136-1144
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• 1999

The collision-induced reaction of gas-phase atomic hydrogen with hydrogen atoms chemisorbed on a silicon (001)-(2×1) surface is studied by use of the classical trajectory approach. The model is based on reaction zone atoms interacting with a finite number of primary system silicon atoms, which then are coupled to the heat bath, i.e., the bulk solid phase. The potential energy of the Hads‥Hgas interaction is the primary driver of the reaction, and in all reactive collisions, there is an efficient flow of energy from this interaction to the Hads-Si bond. All reactive events occur on a subpicosecond scale, following the Eley-Rideal mechanism. These events occur in a localized region around the adatom site on the surface. The reaction probability shows the maximum near 700K as the gas temperature increases, but it is nearly independent of the surface temperature up to 700 K. Over the surface temperature range of 0-700 K and gas temperature range of 300 to 2500 K, the reaction probability lies at about 0.1. The reaction energy available for the product states is small, and most of this energy is carried away by the desorbing H2 in its translational and vibrational motions. The Langevin equation is used to consider energy exchange between the reaction zone and the bulk solid phase.

• Journal of the Korean Society for Aviation and Aeronautics
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• v.14 no.1
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• pp.2-8
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• 2006

Numerical analysis of the flow field in the reactive medium of End-Burring combustor is studied in order to investigate the combustion characteristics of hybrid combustion. The main part of this study is focused on the port diameter effects of oxidizer injector on the temperature distribution within the reactive field. It is found that the case having the largest port diameter(25 mm) delivers the optimum conditions for the design of End-Burring combustor where the predicted temperature field showed the most acceptable distribution.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.4
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• pp.751-755
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• 2007

We have studied the variable conditions of reactive sputtering to prepare AM thin film. The leakage current showed below $10^{-9}A/cm^2$ at the deposition temperature of $250^{\circ}C\;and\;300^{\circ}C$ in the field of 0.1 MV/cm, and it was gradually increased and to be saturated in 0.2 MV/cm. The C-V characteristics of the above mentioned deposition temperature conditions showed a deep depletion phenomenon at inversion region. The C-V characteristics showed similarly under the DC power conditions of 100 and 150 W but were degraded at 200W. When the DC power was 100, 200, and 300 W the dielectric breakdown phenomenon was shown in 2.8, 3.2 and 5.2 MV/cm, respectively. It was found that AIN film was dominated by Poole-Frenkel conduction mechanism.

• Advances in materials Research
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• v.1 no.3
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• pp.233-243
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• 2012

Thermal reactive diffusion coating of vanadium carbide on DIN 2714 steel substrate was performed in a molten borax bath at $950-1050^{\circ}C$. The coating formed on the surface of the substrate had uniform thickness ($1-12{\mu}m$) all over the surface and the coating layer was hard (2430-2700 HV), dense, smooth and compact. The influence of the kinetics parameters, temperature and time, has been investigated. Vanadium carbide coating was characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectrometry (EDX) and X-ray diffraction analysis (XRD). The corrosion resistance of the coating was evaluated by potentiodynamic polarization in 3.5% NaCl solution. The results obtained showed that decrease of coating microhardness following increasing time and temperature is owing to the coarsening of carbides and coating grain size.

• Transactions on Electrical and Electronic Materials
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• v.5 no.3
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• pp.122-125
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• 2004

ITO films were deposited on polyethylene terephthalate substrate by a dc reactive magnetron sputtering using rf bias without substrate heater and post-deposition thermal treatment. The dependency of rf substrate bias on plasma sputter processing was investigated to control energetic particles and improve ITO film properties. The substrate was applied negative rf bias voltage from 0 to -80 V. The composition of indium, tin, and oxygen atoms is strongly depended on the rf substrate bias. Oxygen deficiency is the highest at rf bias of -20 V. The electrical and optical properties of ITO films also are dominated obviously by negative rf bias.

• International Journal of Concrete Structures and Materials
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• v.10 no.1
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• pp.29-37
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• 2016

The paper presents a research project on the tensile properties of RPC mixed with both steel and polypropylene fibers after exposure to $20-900^{\circ}C$. The direct and the indirect tensile strength (in bending) were measured through tensile experiment on dog-bone specimens and bending experiment on $40{\times}40{\times}160mm$ prisms. RPC microstructure was analyzed using scanning electron microscope. The results indicate that, steel fibers can significantly improve the tensile performance of hybrid fiber-reinforced RPC, whereas polypropylene fibers have no obvious effect on the tensile performance. With increasing temperature, the flexural and axial tensile strength of hybrid fiber-reinforced RPC substantially decrease linearly, which attributes to the deteriorating microstructure. Based on the experimental results, equations are established to express the decay of the flexural and tensile strength with increasing temperature.