• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.288-289
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• 2011

Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.3
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• pp.243-254
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• 2014

It is essential to predict the coil temperature under over load and over speed conditions for reliability in high speed low torque surface mounted PM synchronous motors(SPM). In the present study, the losses and coil temperature are measured under rated condition and calculated under over speed and over load conditions in the three different motors with 35PN440, 25PN250 and 15HTH1000. The heat transfer modeling has been performed based on acquired losses and temperature. The difference of coil temperature between heat transfer modeling and experiment is less than 6.4% under no load, over speed and over load conditions. Subsequently, the coil temperature of the motor with 15HTH1000 is 84.4% of the coil temperature of the motor with 35PN440 when speed is 0.9 and load is 3.0. The output of motor with 15HTH1000 is 85.2% greater than the output of the motor with 35PN440 when the dimensionless coil temperature is 1.0.

• The Transactions of the Korean Institute of Power Electronics
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• v.17 no.5
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• pp.401-408
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• 2012

A simple on-line elimination strategy of the dead time and inverter nonlinearity using the current slope information is presented for a PWM inverter-fed IPMSM (Interior Permanent Magnet Synchronous Motor) drive. In a PWM inverter-fed IPMSM drive, a dead time is inserted to prevent a breakdown of switching device. This distorts the inverter output voltage, resulting in a current distortion and torque ripple. In addition to the dead time, inverter nonlinearity exists in switching devices of the PWM inverter, which is generally dependent on operating conditions such as the temperature, DC link voltage, and current. The proposed scheme is based on the fact that the d-axis current ripple is mainly caused by the dead time and inverter nonlinearity. To eliminate such an influence, the current slope information is determined. The obtained current slope information is processed by the PI controller to estimate the disturbance caused by the dead time and inverter nonlinearity. The overall system is implemented using DSP TMS320F28335 and the validity of the proposed algorithm is verified through the simulation and experiments. Without requiring any additional hardware, the proposed scheme can effectively eliminate the dead time and inverter nonlinearity even in the presence of the parameter uncertainty.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.4
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• pp.56-64
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• 2006

Generally, Permanent Magnet Brushless DC Motor(PM BLDC) is necessary the Hall-IC to detect the rotor position. But it will take place the operation standstill of motor or error of rotor position detection according to the circumference temperature, humidity, or limited surroundings. This paper propose the algorithm of rotor position detection only using one or two Hall-IC. Therefore we can estimate information of the others phase in sequence through a rotor instead of using three Hall-IC at 3 phase motor. This paper identify the same characteristics, performance and function of protection circuit by the proposed algorithm with the 3 phase PM BLDC motor in comparison with general method.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.17 no.6
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• pp.83-88
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• 2017

In this paper, a 3-port waveguide circulator of Ka-band millimeter-wave for isolation between transmit channel and receive channel at high power transmit mode is designed and fabricated for the seeker of the guided missile and circulator performance is verified through the S-parameter, high power and operation temperature test. At the configuration design, interface design between a seeker antenna and the circulator is considered and half-height of standard waveguide is applied for minimum and light weight body. The shape of permanent magnet and ferrite is optimized by simulation and tuning dielectrics at each port are placed for the best performance. In Fc(center frequency)${\pm}1000MHz$, designed waveguide circulator has below -20 dB return loss, below 0.5 dB insertion loss and below -23 dB isolation. It is found that circulator characteristics is similar to design results.

• Progress in Superconductivity
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• v.10 no.1
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• pp.55-59
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• 2008

A Superconductor Flywheel Energy Storage System(SFES) mainly consists of a pair of non-contacting High Temperature Superconductor(HTS) bearings that provide very low frictional losses, a composite flywheel with high energy storage density. The HTS bearings, which offer dynamic stability without active control, are the key technology that distinguishes the SFES from other flywheel energy storage devices, and great effort is being put into developing this technology. The Superconductor Journal Bearing(SJB) mainly consists of HTS bulks and a stator, which holds the HTS bulks and also acts as a cold head. Static properties of HTS bearings provide data to solve problems which may occur easily in a running system. Since stiffness to counter vibration is the main parameter in designing an HTS bearing system, we investigate SJB magnetic force through static properties between the Permanent Magnet(PM) and HTS. We measure stiffness in static condition and the results are used to determine the optimal number of HTS bulks for a 100kWh SFES.

• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.1
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• pp.52-60
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• 2005

Generally, a voltage difference or voltage distortion exists between the reference voltage and the practical voltage applied to a motor in a pulse width modulated(PWM) voltage source inverter(VSI). This voltage distortion varies with the operating conditions such as the temperature, DC link voltage, and phase current level. Also the voltage distortion affects the machine current distortion, torque pulsations, and control performance. In this paper, the voltage distortion in a PWM VSI is analyzed and a new on-line estimation method based on the model reference adaptive system(MRAS) is proposed to compensate the time varying voltage distortion, while considering the parameter variations for a permanent magnet synchronous motor (PMSM). The simulation and experimental results show the effectiveness of the proposed voltage difference observer and the compensation method.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Korean Journal of Materials Research
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• v.22 no.11
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• pp.569-574
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• 2012

Large single grain $Gd_{1.5}Ba_2Cu_3O_{7-y}$ (Gd1.5) bulk superconductors were fabricated by a top-seeded melt growth (TSMG) process using an $NdBa_2Cu_3O_{7-y}$ seed. The seeded Gd1.5 powder compacts with a diameter of 50 mm were subjected to the heating cycles of a TSMG process. After the TSMG process, the diameter of the single grain Gd1.5 compact was reduced to 43 mm owing to the volume contraction during the heat treatment. The superconducting transition temperature ($T_c$) of the top surface of the single grain Gd1.5 sample was as high as 93.5 K. The critical current densities ($J_cs$) at 77 K and 1T and 1.5 T were in ranges of 25,200-43,900 $A/cm^2$ and 10,000-23,000 $A/cm^2$, respectively. The maximum attractive force at 77 K of the sample field-cooled using an Nd-B-Fe permanent magnet (surface magnetic field of 0. 527 T) was 108.3 N; the maximum repulsive force of the zero field-cooled sample was 262 N. The magnetic flux density of the sample field-cooled at 77 K was 0.311T, which is approximately 85% of the applied magnetic field of 0.375 T. Microstructure investigation showed that many $Gd_2BaCuO_5$ (Gd211) particles of a few ${\mu}m$ in size, which are flux pinning sites of Gd123, were trapped within the $GdBa_2Cu_3O_{7-y}$ (Gd123) grain; unreacted $Ba_3Cu_5O_8$ liquid and Gd211 particles were present near the edge regions of the single grain Gd1.5 bulk compact.