• Title/Summary/Keyword: temperature dependence

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Photocurrent study on the splitting of the valence band and growth of MgGa2Se4 single crystal thin film by hot wall epitaxy (Hot Wall Epitaxy(HWE)법에 의한 MgGa2Se4 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구)

  • Kim, Hyejeong;Park, Hwangseuk;Bang, Jinju;Kang, Jongwuk;Hong, Kwangjoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.23 no.6
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    • pp.283-290
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    • 2013
  • A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34 eV-(8.81{\times}10^{-4}eV/K)T^2/(T+251K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $MgGa_2Se_4$ have been estimated to be 190.6 meV and 118.8 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $MgGa_2Se_4$/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-}$, $B_{1^-}$exciton for n = 1 and $C_{27}-exciton$ peaks for n = 27.

Photocurrent study on the splitting of the valence band and growth of $ZnIn_{2}Se_{4}$ single crystal thin film by hot wall epitaxy (Hot wall epitaxy(HWE)법에 의한 $ZnIn_{2}Se_{4}$ 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구)

  • Hong, Kwang-Joon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.18 no.5
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    • pp.217-224
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    • 2008
  • A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.

Growth and Photocurrent Properties of CdIn2S4/GaAs Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy 법에 의한 CdIn2S4 단결정 박막의 성장과 광전류 특성)

  • Lee, Sang-Youl;Hong, Kwang-Joon;Park, Jin-Sung
    • Journal of Sensor Science and Technology
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    • v.11 no.5
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    • pp.309-318
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    • 2002
  • A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured with Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7116\;eV-(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasi cubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K areascribed to the $A_1$-, $B_1$-, and C1-exciton peaks for n = 1.

Kinetic Studies on the Thermal Degradation of Ginsenosides in Ginseng Extract (Ginsenosides의 처리온도(處理溫度) 및 시간(時閭)에 따른 반응속도론적(反應速度論的) 연구(硏究))

  • Choi, Jin-Ho;Kim, Doo-Ha;Sung, Hyun-Soon;Kim, Woo-Jung;Oh, Sung-Ki
    • Korean Journal of Food Science and Technology
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    • v.14 no.3
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    • pp.197-202
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    • 1982
  • Kinetic study for the thermal degradation of ginsenosides in ginseng extract was conducted. The results indicate that the thermal degradation followed first order kinetics and rate constants varied substantially depending on the types of ginsenosides and heat treatment temperatures. Activation energy calculated by Arrhenius plots ranged from 16.80 kcal/mole to 30.10 kcal/mole and $Q_{10}$ values ranged from 2.01 to 3.49. Correlation coefficients between the change of ginsenoside contents by thermal degradation and heat treatment temperature were $0.995{\sim}0.999$. The dependence on temperatures of the decomposition rate constant of total ginsenoside can be expressed as $k=4.574{\times}10^8$ exp(8898.8/T).

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The Effect of Contamination of Ion Source on Ionic Current of Quadrupole Mass Spectrometer (사중극 질량 분석기의 이온소스 오염이 이온전류에 미치는 영향)

  • Lee, K.C.;Park, C.J.;Kim, J.T.;Oh, E.S.;Hong, K.S.;Hong, S.S.;Lim, I.T.;Yun, J.Y.;Kang, S.W.;Shin, Y.H.
    • Journal of the Korean Vacuum Society
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    • v.18 no.3
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    • pp.197-202
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    • 2009
  • The long term stability of ion current of QMS has been one of key parameters for monitoring gas process in vacuum. The time dependence of ionic current was monitored while the pressure of nitrogen gas was kept at a fixed pressure by introducing the gas into vacuum chamber. The chamber was evacuated to ${\sim}3{\times}10^{-9}\;Torr$ to reduce background signals before the measurement. Two ion sources were tested; one had brownish or black color due to gas contamination and the other one was new, i.e. cleaner. At a nitrogen pressure of $1{\times}10^{-5}\;Torr$, the ionic currents measured by the contaminated ion source decreased faster with time. The decrease rate was respectively ${\sim}46%$ for cleaner one and ${\sim}84%$ for contaminated one after ${\sim}5.5%$ hours. In order to test the effect of filament material on the ion current decrease, we fabricated a tungsten(W) filament which consisted of two parts; one half was made of W and the other was coated with yttria. The similar decrease of ionic currents were shown for the two types of filaments, indicating that slight change of temperature of filament due to material difference i.e. baking effect could not improve the origin of ionic current decrease. Overall the decreasing rate of ionic current is more closely associated with contaminated ion source of QMS rather than its filament materials.

Kinetics of esterification of food waste oil by solid acid catalyst and reaction optimization (고체 산 촉매를 이용한 고산가 음폐유의 에스테르화 반응 동역학 연구 및 반응 최적화)

  • Lee, Hwa-Sung;Lee, Joon-Pyo;Lee, Jin-Suk;Kim, Deog-Keun
    • Journal of the Korean Applied Science and Technology
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    • v.34 no.3
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    • pp.683-693
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    • 2017
  • Transport biofuels have been recognized as a promising means to resolve the following issues like global warming, oil depletion and environmental pollutions. Among various biofuels, biodiesel has several advantages such as less emission of air pollutants and higher cetane values compared to diesel oil. Demand for biodiesel in Korea is increasing that leads to higher dependence on the imported feedstocks. Therefore, it is important to utilize the waste materials collected domestically for biodiesel production. Food waste oil collected in waste treatment facility has not been used for biodiesel production due to high free fatty contents in the oil. In this work, biodiesel conversion of food waste oil by Amberlyst 15 was studied. Synthetic and actual food waste oils have been used in the study. First, the effects of the major operating parameters including reaction temperature, methanol to oil molar ratio and catalyst loading on the conversion rates and yields were determined with synthetic waste oil. Kinetic modelling work was also done to determine the activation energy of the reaction. From the work, optimization reaction conditions were determined to be 383K, 1: 26.1 for methanol molar ratio to oil, 10 wt.% for catalyst loading and 360 min for reaction time. Activation energy of the reaction is determined to be 29.75 kJ/mol, lower than those reported in the previous works. So the solid catalyst, Amberlyst 15, was more efficient for esterification than the solid catalysts employed in the other works. Agitation rates have the negligible effects on the conversion rates and yields. With the identified optimization conditions, conversion of the actual food waste oil was also carried out. The esterification yield of actual food waste oil in 60 min was 13% lower than that of synthetic waste oil but the final yields in 240 min were similar each other, 98.12% for synthetic oil and 97.62% for actual waste oil.

Uronic Acid Composition, Block Structure and Some Related Properties of Alginic Acid (4) On Alginic Acid from Myagropsis myagroides Fensholt and Sargassum horneri C. Agardh (알긴산의 화학적 조성 및 그 물성에 관한 연구 (4) 외톨개모자반 및 괭생이모자반의 알긴산)

  • KIM Dong-Soo;PARK Yeung-Ho
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.18 no.2
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    • pp.124-130
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    • 1985
  • In the previous papers (Kim and Park, 1984 a, b; 1985 a), we have reported on alginic acid from Ecklonia cava and Sargassum ringgoldianum. The seasonal variation in the composition of uronic acids and their block structures of alginic acid from Myagropsis myagroides Fensholt and Sargassum horneri C. Agardh (collected from Iee Chun village on the coast of Ilgwang-myon, Yansan-gun, Kyungnam, Korea, in the period of January to December in 1982) are investigated, and their relationship between the chemical composition and some related properties are discussed in this study. One year average contents of alginic acid were $25.2\%$ in the M. myagroides and $26.5\%$ in the S. horneri, and one year average values of M/G ratios were 1.97 in the M. myagroides and 1.38 in the S. horneri. The value of M. myagroides was largest in the period of December to April, and smallest in May to June and October to November. The value of S. horneri was largest in January and smallest in March to April. The proportion of alternating, M and G block in M. myagroides were $18.4\%,\;40.4\%$, and $41.2\%$, and those in S. horneri $9.8\%,\;33.3\%$ and $56.9\%$, respectively. The higher viscosity showed the value of 45.3 cP in M. myagroides (in November), and 26.0 cP in S. horneri(in January), respectively. Furthermore, the dependence on temperature of M. myagroides alginic acid was also larger in November, that of S. horneri alginic acid in June. Ion exchange ability of M. myagroides alginic acid was highest in November and the exchange amounts were $Pb^{2+}\;4.4,\;Cu^{2+}\;1.8,\;Zn^{2+}\;2.5$ and $Co^{2+}\;2.0\;meq/g$. Na-Alg., and the ability of S. horneri alginic acid was highest in June and the amounts were $Pb^{2+}\;4.5,\;Cu^{2+}\;2.2,\;Zn^{2+}\;2.4$ and $Co^{2+}\;2.1\;meq/g.$ Na-Alg. The affinity with metallic ions appeared higher in order of $Pb^{2+}>Cu^{2+}>Zn^{2+}>Co^{2+}$, and the exchange ability assumed to relate with the block ratio of uronic acid.

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Growth and optical conductivity properties for MnAl2S4 single crystal thin film by hot wall epitaxy method (Hot Wall Epitaxy(HWE)법에 의한 MnAl2S4 단결정 박막 성장과 광전도 특성)

  • You, Sangha;Lee, Kijeong;Hong, Kwangjoon;Moon, Jongdae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.24 no.6
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    • pp.229-236
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    • 2014
  • A stoichiometric mixture of evaporating materials for $MnAl_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MnAl_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MnAl_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.7920eV-5.2729{\times}10^{-4}eV/K)T^2/(T+786 K)$. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (${\gamma}$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation (MAPD) and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapour compare with in Mn, Al, air and vacuum vapour. Then we obtained the sensitivity of 0.93, the value of pc/dc of $1.10{\times}10^7$, the MAPD of 316 mW, and the rise and decay time of 14.8 ms and 12.1 ms, respectively.

Properties of Photoluminescence and Growth of CdIn2Te4 Single Crystal by Bridgeman method (Bridgeman법에 의한 CdIn2Te4 단결정 성장과 광발광 특성)

  • Moon, Jong-Dae
    • Journal of Sensor Science and Technology
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    • v.12 no.6
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    • pp.273-281
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    • 2003
  • A stoichiometric mixture for $CdIn_2Te_4$ single crystal was prepared from horizontal electric furnace. The $CdIn_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgeman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. The (001) growth plane of oriented $CdIn_2Te_4$ single crystal was confirmed from back-reflection Laue patterns. The carrier density and mobility of $CdIn_2Te_4$ single crystal measured with Hall effect by van der Pauw method are $8.61{\times}10^{16}\;cm^{-3}$ and $242\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2Te_4$ single crystal obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.4750\;eV-(7.69{\times}10^{-3}\;eV)T^2/(T+2147)$. After the as-grown $CdIn_2Te_4$ single crystal was annealed in Cd-, In-, and Te-atmospheres, the origin of point defects of $CdIn_2Te_4$ single crystal has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Te}$, $Cd_{int}$, and $V_{Cd}$, $Te_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cd-atmosphere converted $CdIn_2Te_4$ single crystal to an optical n-type. Also, we confirmed that In in $CdIn_2Te_4$ did not form the native defects because In in $CdIn_2Te_4$ single crystal existed in the form of stable bonds.

Study on Oxidation and Coercivity of Nd2Fe14B Compound Crystal (Nd2Fe14B 화합물 결정의 산화 및 보자력에 관한 연구)

  • Kwon, H.W.;Yu, J.H.
    • Journal of the Korean Magnetics Society
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    • v.22 no.3
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    • pp.85-90
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    • 2012
  • Oxidation of the $Nd_2Fe_{14}B$ compound crystal and its effect on the coercivity of the fine $Nd_2Fe_{14}B$ crystal particles were investigated. Oxidation kinetics of the $Nd_2Fe_{14}B$ compound crystal was investigated using an excessively grown $Nd_2Fe_{14}B$ grains in the $Nd_{15}Fe_{77}B_8$ alloy ingot. Oxidation of the $Nd_2Fe_{14}B$ compound crystal occurred by dissociation of the phase into multi-phase mixture of ${\alpha}$-Fe, $Fe_3B$, and Nd oxides. Oxidation rate of the $Nd_2Fe_{14}B$ compound crystal showed no dependence on the crystallographic direction. The oxidation reaction was modeled according to simple linear relationship. Activation energy for the oxidation of $Nd_2Fe_{14}B$ compound crystal was calculated to be approximately 26.8 kJ/mol. Fine $Nd_2Fe_{14}B$ crystal particles in near single domain size was prepared by ball milling of the HDDR-treated $Nd_{15}Fe_{77}B_8$ alloy, and these particles were used for investigating the effect of oxidation on the coercvity. The near single domain size $Nd_2Fe_{14}B$ crystal particles (${\fallingdotseq}0.3\;{\mu}m$) had high coercivity over 9 kOe. However, the coercivity was radically reduced as the temperature increased in air (<2 kOe at $200^{\circ}C$). This radical coercivity reduction was attributed to the soft magnetic phases, ${\alpha}$-Fe and $Fe_3B$, which were formed on the surface of the fine particles due to the oxidation.