• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.3
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• pp.122-126
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• 2003

In this study, $Zn_{0.86}Mn_{0.14}$Te epilayer of 0.7 $\mu\textrm{m}$-thickness was grown on GaAs(100) substrate by using hot wallepitaxy. GaAs(100) substrate was removed from $Zn_{0.86}Mn_{0.14}$Teepilayer by the selective etching solution. The crystal structure and the lattice constant of only Z $n_{0.86}$ M $n_{0.14}$Te epilayer were investigated to be zincblende and 6.140 $\AA$ from X-ray diffraction pattern, respectively. Mn composition x of $Zn_{1-x}Mn_x$Te epilayer was found to be 0.14 using this lattice constant and Vegard's law. The crystal quality of the epilayer was confirmed to be very good due to 256 arcsec-full-width at half-maximum of the double crystal rocking curve. The absorption spectra from the transmission ones were obtained to measure the band gap energy of $Zn_{0.86}Mn_{0.14}$Te epilayer from 300 K to 10 K. With the decreasing temperature,. strong absorption regions in the absorption spectra were shifted to higher energy side and the absorption peak meaning the free exciton formation appeared near the absorption edge. The band gap energy values of $Zn_{0.86}Mn_{0.14}$Te epilayer at 0 K and 300 K were found to be almost 2.4947 eV and 2.330 eV from the temperature dependence of the free exciton peak position energy of $Zn_{0.86}Mn_{0.14}$Te epilayer, respectively. The free exciton peak position energy of $Zn_{0.86}Mn_{0.14}$Te epilayer without GaAs substrate was larger 15.4 meV than photoluminescence peak position energy at 10 K. This energy difference between two peaks was analysed to be Stokes shift.

• Restorative Dentistry and Endodontics
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• v.14 no.1
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• pp.41-56
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• 1989

The purpose of this study was to examine the effect of temperature dependence of the behavior on the physical properties of posterior composite resins. Three light cure posterior composite resins (Heliomolar, Litefil-P, and P-50) and one chemical cure posterior composite resin (Bisfil-II) were used as experimental materials. Composite resin was placed in a cylindrical brass mold (2.5 mm high and 6.5 mm inside diameter) that was rested on a glass plate. Another flat glass was placed on top of the mold, and the plate was tightly clamped together. After the mold had been filled with the light cure composite material, the top surface was cured for 30 seconds with a light source. Chemical cure resin specimens were made in the same manner as above. Three hundreds and twenty composite resin specimens were constructed from the four composite materials. One hundred and sixty specimens of them were placed in a heater at $50^{\circ}C$, $75^{\circ}C$, $100^{\circ}C$, $125^{\circ}C$, $150^{\circ}C$, $175^{\circ}C$ and $200^{\circ}C$ for 5 minutes or 10 minutes respectively before compressive strengths were measured. Another one hundred and sixty specimens were tested for the diametral tensile strengths in the same way as above. They were randomly divided into eight groups according to the mode of heating methods as follows and stored in distilled water at $37^{\circ}C$ for 24 hours. Group $37^{\circ}C$ - specimens were stored at $37^{\circ}C$ in distilled water for 24 hours. Group $50^{\circ}C$ - specimens were heated at $50^{\circ}C$ after curing. Group $75^{\circ}C$ - specimens were heated at $75^{\circ}C$ after curing. Group $100^{\circ}C$ - specimens were heated at $100^{\circ}C$ after curing. Group $125^{\circ}C$ - specimens were heated at $125^{\circ}C$ after curing. Group $150^{\circ}C$ - specimens were heated at $150^{\circ}C$ after curing. Group $175^{\circ}C$ - specimens were heated at $175^{\circ}C$ after curing. Group $200^{\circ}C$ - specimens were heated at $200^{\circ}C$ after curing. Twenty specimens of each of four composite resins were respectively made by insertion of materials into same mold for examining the dimensional changes between before and after heating. The final eighty specimens were stored in distilled water at $37^{\circ}C$ for 24 hours before testing the dimensional changes. Compressive and diametral tensile strengths were measured crosshead speed 1mm/minute and 500Kg in full scale with a mechanical testing machine (DLC 500 Type, Shimadzu Co., Japan). Dimensional changes were determined by measuring the diametral changes of eighty specimens with micrometer (Mitutoyo Co., Japan). Results were as follows: 1. Diametral tensile strengths of specimens in all groups were increased with time heated compared with control group except for that in group $50^{\circ}C$ and the maximum diametral tensile strength was appeared in the specimen of Litefil-P heated for 10 minutes at $100^{\circ}C$. In heliomolar and P-50, it could be seen in the specimen heated for 10 minutes at $150^{\circ}C$, but in Bisfil-II, it could be found in the specimen heated for 5 minutes at $150^{\circ}C$. 2. Compressive strengths of specimens in all groups was tended to be also increased with time heated but that in group $50^{\circ}C$ and the maximum compressive strengths were showed in the same specimens conditioned as the diametral tensile strengths of four composite materials tested. 3. In Heliomolar, Litefil-P, and Bisfil-II, it was decreased in diameters of resin specimens between before heating and increased in diameters of resin specimens after storing in distilled water, but it was not in P-50. 4. There is little difference in diametral tensile strengths, compressive strengths, and dimensional changes followed by heating the resin specimens for 5 minutes and 10 minutes, but there is no statistical significances.

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.9-17
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• 2002

The forming conditions of X-ray storage phosrhors $BaFBr_{1-x}I_x:Eu^{2+}$, $Na^+$ have been investigated, and measured the PSL emission spectra and its intensity, fading characteristics and does dependence of the prepared phosphors. These characteristics were compared with those of commercial image plate (ST-III) obtained from Fuji Photo Film Co. The optimal preparing conditions of $BaFBr_{1-x}I_x:Eu^{2+}$, $Na^+$ Phosphor were 0.5 mol% of $EuF_3$, 4.0 mol% of NaF and composition ratio x=0.3, and the sintering temperature were $950^{\circ}C$ in $H_2$ atmosphere. When the composition ratio x was equal to 0, the spectral range of the luminescence of $BaFBr_{1-x}I_x:Eu^{2+}$, $Na^+$ phosphor was $365{\sim}420\;nm$, and its maximum luminescence intensity appeared at 390 nm. When composition ratio x was not equal to 0, the wavelength ranges and peak of the spectra were shifted to the longer wavelength with the growth of composition ratio x. A good linearity was shown between the PSL intensity and X-ray irradiation dose. The phosphor sample with x=0.3 exhibited better fading characteristics than that of other $BaFBr_{1-x}I_x:Eu^{2+}$ phosphor samples, and the fading characteristics of the PSL intensity at room temperature were shown poorer with increasing $I^-$ ion concentration. The lattice constant of the phosphor becomes larger with increasing the $I^-$ ion concentration.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.425-433
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• 2000

The stochiometric mix of evaporating materials for the $CuGaTe_2$single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuGaTe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0 and c_0$ were 6.025 $\AA$ and 11.931 $\AA$, respectively. To obtain the single crystal thin films, $CuGaTe_2$mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $670^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is 2.1$\mu\textrm{m}$. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. The carrier density and mobility of $CuGaTe_2$single crystal thin films deduced from Hall data are $8.72{\times}10{23}$개 $\textrm m^3$, $3.42{\times}10^{-2}$ $\textrm m^2$/V.s at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuGaTe_2$single crystal thin film, we have found that the values of spin orbit coupling $\Delta$s.o and the crystal field splitting $\Delta$cr were 0.0791 eV and 0.2463 eV at 10 K, respectively. From the PL spectra at 10 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0470 eV and the dissipation energy of the donor-bound exciton and acceptor-bound exciton to be 0.0490 eV, 0.0558 eV, respectively.

• The Korean Journal of Pesticide Science
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• v.10 no.4
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• pp.296-305
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• 2006

The adsorption and persistence of pencycuron {1-(4-chlorobenzyl) cyclopentyl-3-phenylurea} in soils were investigated under laboratory and field conditions to in order to assess the safety use and environmental impact. In the adsorption rate experiments, a significant power function of relation was found between the adsorbed amount of pencycuron and the shaking time. Within one hour following the shaking, the adsorption amounts in the SCL and the SiCL were 60 and 65% of the maximum adsorption amounts, respectively. The adsorption reached a quasi-equilibrium 12 hours after shaking. The adsorption isotherms followed the Freundlich equation. The coefficient (1/n) indicating adsorption strength and degree of nonlinearity was 1.45 for SCL and 1.68 to SiCL. The adsorption coefficients ($K_d$) were 2.31 for SCL and 2.92 to SiCL, and the organic carbon partition coefficient, $K_{oc}$, was 292.9 in SCL and 200.5 inSiCL. In the laboratory study, the degradation rate of pencycuron in soils followed a first-order kinetic model. The degradation rate was greatly affected by soil temperature. As soil incubation temperature was increased from 12 to $28^{\circ}C$, the residual half life was decreased from 95 to 20 days. Arrhenius activation energy was 57.8 kJ $mol^{-1}$. Furthermore, the soil moisture content affected the degradation rate. The half life in soil with 30 to 70% of field moisture capacity was ranged from 21 to 38 days. The moisture dependence coefficient, B value in the empirical equation was 0.65. In field experiments, the half-life were 26 and 23 days, respectively. The duration for period of 90% degradation was 57 days. The difference between SCL and SiCL soils varied to pencycuron degradation rates were very limited, particularly under the field conditions, even though the characteristics of both soils are varied.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.283-290
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• 2013

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34 eV-(8.81{\times}10^{-4}eV/K)T^2/(T+251K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $MgGa_2Se_4$ have been estimated to be 190.6 meV and 118.8 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $MgGa_2Se_4$/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-}$, $B_{1^-}$exciton for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.217-224
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• 2008

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Journal of Sensor Science and Technology
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• v.11 no.5
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• pp.309-318
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• 2002

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured with Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7116\;eV-(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasi cubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K areascribed to the $A_1$-, $B_1$-, and C1-exciton peaks for n = 1.

• Korean Journal of Food Science and Technology
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• v.14 no.3
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• pp.197-202
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• 1982

Kinetic study for the thermal degradation of ginsenosides in ginseng extract was conducted. The results indicate that the thermal degradation followed first order kinetics and rate constants varied substantially depending on the types of ginsenosides and heat treatment temperatures. Activation energy calculated by Arrhenius plots ranged from 16.80 kcal/mole to 30.10 kcal/mole and $Q_{10}$ values ranged from 2.01 to 3.49. Correlation coefficients between the change of ginsenoside contents by thermal degradation and heat treatment temperature were $0.995{\sim}0.999$. The dependence on temperatures of the decomposition rate constant of total ginsenoside can be expressed as $k=4.574{\times}10^8$ exp(8898.8/T).

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.197-202
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• 2009

The long term stability of ion current of QMS has been one of key parameters for monitoring gas process in vacuum. The time dependence of ionic current was monitored while the pressure of nitrogen gas was kept at a fixed pressure by introducing the gas into vacuum chamber. The chamber was evacuated to ${\sim}3{\times}10^{-9}\;Torr$ to reduce background signals before the measurement. Two ion sources were tested; one had brownish or black color due to gas contamination and the other one was new, i.e. cleaner. At a nitrogen pressure of $1{\times}10^{-5}\;Torr$, the ionic currents measured by the contaminated ion source decreased faster with time. The decrease rate was respectively ${\sim}46%$ for cleaner one and ${\sim}84%$ for contaminated one after ${\sim}5.5%$ hours. In order to test the effect of filament material on the ion current decrease, we fabricated a tungsten(W) filament which consisted of two parts; one half was made of W and the other was coated with yttria. The similar decrease of ionic currents were shown for the two types of filaments, indicating that slight change of temperature of filament due to material difference i.e. baking effect could not improve the origin of ionic current decrease. Overall the decreasing rate of ionic current is more closely associated with contaminated ion source of QMS rather than its filament materials.