• 제목/요약/키워드: t-(v,k,1) Design

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t-(v,k,1) 조합 디자인 기반의 데이터 분산 관리 방식 (Distributed Data Management based on t-(v,k,1) Combinatorial Design)

  • 송유진;박광용;강연정
    • 정보처리학회논문지C
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    • 제17C권5호
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    • pp.399-406
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    • 2010
  • 유비쿼터스 네트워크 환경에서 다양한 데이터 서비스가 가능해지면서 악의적인 공격자나 내부 사용자에 의한 보안 취약성 및 프라이버시 침해로 인한 문제를 해결하기 위해 다양한 콘텐츠나 대용량 데이터의 안전한 보안 관리 문제가 주요 이슈로 떠오르고 있다. 기존 다항식 기반을 이용한 Ito, Saito, Nishizeki 할당 방식은 분산된 비밀정보를 복원하기 위해 Share 모두가 필요하게 된다. 반면, 본 제안 방식의 경우, 임계치 이상의 Share가 모아지면 비밀정보를 복원할 수 있다. 또한, 데이터를 분산 복원하는 분산 DBMS 운영상의 효과 특히, 데이터베이스(DB) 서버 및 Share 선택의 규칙성이 있고 조합적 구조인 Combinatorial Design상의 파라메터 t,v,k를 이용함으로써 구현상의 유연성(flexibility)을 갖는다. 본 논문에서는 Share의 할당 문제를 해결하고자 비밀분산 방식을 이용하여 데이터를 분산저장관리 할 때 Share의 할당을 위해 t-(v,k,1) 디자인이 갖는 행렬구조를 적용시킴으로써 새롭게 Share 할당법을 구성하고 데이터 분산저장관리에의 응용에 대해 검토한다.

A Scaling Trend of Variation-Tolerant SRAM Circuit Design in Deeper Nanometer Era

  • Yamauchi, Hiroyuki
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제9권1호
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    • pp.37-50
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    • 2009
  • Evaluation results about area scaling capabilities of various SRAM margin-assist techniques for random $V_T$ variability issues are described. Various efforts to address these issues by not only the cell topology changes from 6T to 8T and 10T but also incorporating multiple voltage-supply for the cell terminal biasing and timing sequence controls of read and write are comprehensively compared in light of an impact on the required area overhead for each design solution given by ever increasing $V_T$ variation (${\sigma}_{VT}$). Two different scenarios which hinge upon the EOT (Effective Oxide Thickness) scaling trend of being pessimistic and optimistic, are assumed to compare the area scaling trends among various SRAM solutions for 32 nm process node and beyond. As a result, it has been shown that 6T SRAM will be allowed long reign even in 15 nm node if ${\sigma}_{VT}$ can be suppressed to < 70 mV thanks to EOT scaling for LSTP (Low Standby Power) process.

765kV 1회선 송전선로 기술기준 및 설계방안 (Technology and Design Standards of 765kV 1cct Transmission Line)

  • 심순보;민병욱;박갑호;조춘익;김재열;신일섭
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 추계학술대회 논문집 전력기술부문
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    • pp.80-82
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    • 2002
  • To solve the difficulty in obtaining transmission routes and substation sites. increase the transmission capacity between generation sites and load centers. and enhance the stability of the power system. we have constructed and operated the 765kV double circuit transmission line(hereunder T/L) from the Dangjin thermal power plant and the Uljin nuclear power plant to the metropolitan. It makes it possible for us to accumulate know-how of the 765kV system that is the highest operating system level in Asia. As the second 765kV project, we are going to construct the 765kV single circuit T/L between Ansung and Gap yung. Because of the different electrical and mechanical characteristics. we are in need of different design technology. This paper presents the optimal design of 765kV single circuit transmission line after due consideration about the arrangement of conductors. the shape of a tower, insulation, etc.

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V/UHF 대역 SP3T 송수신 스위치 설계 (Design of V/UHF-Band SP3T Transmitting/Receiving Switch)

  • 이병남;박동철
    • 한국군사과학기술학회지
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    • 제11권5호
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    • pp.34-41
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    • 2008
  • This paper describes the design of SP3T PIN diode switch which has a 500W high power handling capability in $20{\sim}400MHz$ frequency range. Design factors were investigated and it was confirmed by simulation that the characteristics of insertion loss, VSWR, and isolation met design goal. Also, the capability to handle 500W high power with very fast switching speed of less than $26{\mu}s$ was confirmed and insertion loss of less than 1dB, VSWR of less than 1.4:1, and isolation of higher than 60dB were obtained by experiments.

345kV/154kV 직접접지계 송전설비의 내오손 설계기준(안) 해설 (Introduction on the Contamination Design Standard(Revision Proposal) of 345kV/154kV Transmission System in KEPCO)

  • 심응보;우정욱;곽주식;민병욱;이옥배;신태우;박윤석
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 하계학술대회 논문집 A
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    • pp.262-264
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    • 2002
  • This paper shows the design standard of KEPCO on the contamination design for 345 kV and 154 kV transmission tower. Up to now, because the design standard of KEPCO on the insulation design contains 154 kV transmission system only, we had investigated the 343 kV system for the revision of design standard, with respect to the contamination design, we have used the same design philosophy which were adopted to the 765 kV transmission tower. In order to determine the number of insulator discs, we had investigated the withstand voltage of discs according to the level of ESDD(Equivalent Salt Deposit Density) and kinds of disc types. The TOV(Power Frequency Temporary Overvoltage) were estimated by EMTP(Electromagnetic Transient Program) for both 154 kV and 345 kV transmission system. The overvoltage level was appeared 1.35 p.u. between phase to ground for both 154 kV and 345 kV transmission system, but finally this factor was not applied to the design standard considering current design standard and economic point of view. With regard to classification of contamination area of 345 kV transmission system, we added the clean area which was not specified in the current design practise.

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V련 현수애자장치의 클램프 횡진 특성 (A Characteristics of Horizontal Swing Angle of Suspension Clamp in V type Suspension String Sets)

  • 손홍관;이형권;민병욱
    • 대한전기학회논문지:전력기술부문A
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    • 제54권3호
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    • pp.133-138
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    • 2005
  • This paper presents a characteristics of horizontal swing angle in V type suspension string sets for 765kV T/L. The design of V type suspension string set does not differ from that of general string set for general towers, but it prevents instabilities from swing motion by the horizontal angle and by the wind pressure. We were designed specially 6 conductor yoke, arcing horn and earth horn. And we were decided to 550mm for a distance of strings. We were carried out characteristics of horizontal swing test and movement of mass center test for V-string sets of 400kN single, 300kN double and 400kN double. This products will be used for 765kV T/L of 1 circuit in suspension towers.

설계 및 공정 변수에 따른 600 V급 IGBT의 전기적 특성 분석 (Analysis of The Electrical Characteristics of Power IGBT According to Design and Process Parameter)

  • 강이구
    • 한국전기전자재료학회논문지
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    • 제29권5호
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    • pp.263-267
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    • 2016
  • In this paper, we analyzed the electrical characteristics of NPT planar and trench gate IGBT after designing these devices according to design and process parameter. To begin with, we have designed NPT planar gate IGBT and carried out simulation with T-CAD. Therefore, we extracted design and process parameter and obtained optimal electrical characteristics. The breakdown voltage was 724 V and The on state voltage drop was 1.746 V. The next was carried out optimal design of trench gate power IGBT. We did this research by same drift thickness and resistivity of planar gate power IGBT. As a result of experiment, we obtain 720 V breakdown voltage, 1.32 V on state voltage drop and 4.077 V threshold voltage. These results were improved performance and fabrication of trench gate power IGBT and planar gate Power IGBT.

페이퍼드레인 공법에 의한 연약지반의 압밀거동 (Consolidation Behavior of Soft Ground by Prefabricated Vertical Drains)

  • 이달원;강예묵;김성완;지인택
    • 농업과학연구
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    • 제24권2호
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    • pp.145-155
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    • 1997
  • 본 연구는 현재 시공중인 사업부지를 선정하여 시험시공중에 있는 연약지반에서 페이퍼 드레인 공법에 의하여 처리한 지반에서 드레인의 타입간격별 침하거동을 파악하고, 실내시험과 현장계측치로부터 구한 압축지수와 압밀계수를 비교분석하여 배수성능의 우수성을 평가한 것으로 그결과를 요약하면 다음과 같다. 1. 실측침하량($S_m$)과 설계침하량($S_t$)의 관계 및 실측압밀도($U_m$)와 설계압밀도($U_t$)와의 관계는 드레인 타입간격 1.0m에서는 $S_m=(1.0{\sim}1.1)S_t$, $U_m=(1.13{\sim}1.17)U_t$로 나타났고, 드레인 타입간격 1.5m에서는 $S_m=(0.7{\sim}0.8)S_t$, $U_m=0.92{\sim}0.99)U_t$의 범위로 나타났다. 2. 현장압축지수($Cc_{Field}$)와 처녀압축지수($V_{CC_{lab.}}$)와의 관계는 $Cc_{Field}=(1.0{\sim}1.2)V_{CC_{lab.}}$로 나타났으나, 처녀압축지수의 결정밥법과 최종예상 침하량의 적용방법에 따른 오차를 감안하면 거의 동일한 것으로 판단된다. 3. 계측치로부터 역산한 현장압밀계수는 실내시험에서 구한 압밀계수보다 크게 나타났고, 압밀계수비($C_h/C_v$)는 드레인 타입간격 1.0m에서는 $C_h=(2.4{\sim}3.0)C_v$, 드레인 타입간격 1.5m에서는 $C_h=(3.5{\sim}4.3)C_v$의 범위로 타입간격이 넓을수록 크게 나타났다. 4 드레인 타입간격에 따른 드레인 자재별 배수성능 평가기준을 압밀계수비의 결과를 기초로 판단하여 보면, 드레인 타입간격 1.0m에서는 Mebra 드레인, 드레인 타입간격 1.5m에서는 Amer드레인이 약간 우수한 것으로 나타났으나, 동일한 타입간격에서는 재질간의 큰차이가 발생되지 않아 모두 동일한 배수성능을 갖는 것으로 판단된다.

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T-gate를 이용한 $GF(2^2)$상의 가산기 및 승산기 설계 (A Design of an Adder and a Multiplier on $GF(2^2)$ Using T-gate)

  • 윤병희;최영희;김흥수
    • 전기전자학회논문지
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    • 제7권1호
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    • pp.56-62
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    • 2003
  • 본 논문에서는 유한체 $GF(2^2)$상에서의 가산기와 승산기를 전류모드인 T-gate를 이용하여 설계하였다. 제시된 회로는 전류 모드에서 동작하는 T-gate의 조합으로 가산 연산과 승산 연산을 수행하는 연산기를 설계하였다. T-gate는 전류 미러와 전송 게이트로 구성되며 4치 T-gate를 설계, 이를 이용하여 $GF(2^2)$의 가산기와 승산기를 1.5um CMOS 공정을 사용하였다. 전원전압은 DC 3.3V이며 단위 전류는 15uA이다. 본 논문에서 제시한 전류 모드 CMOS 연산기는 T-gate의 배열에 의한 모듈성의 이점을 가지고 있으므로 다치 T-gate를 구현하여 다치 연산기를 쉽게 구현할 수 있게 하였다.

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다구찌 실험계획법을 이용한 소구경화기 총열 내부용 Cr-Mo-V강의 질화공정 최적화 (Optimization of Inner Nitriding Process for Cr-Mo-V Steel of Small Arms Barrel by using Taguchi Experimental Design Method)

  • 권혁린;김동은;손형동;신재원;박재하;강명창
    • 한국기계가공학회지
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    • 제17권3호
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    • pp.148-154
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    • 2018
  • When shooting small arms, the inner surface temperature is heated up to about $700{\sim}1,000^{\circ}C$ by the friction of the bullet and the inner wall of the barrel and the combustion of propellant. High-temperature propellant gas and high-speed movement of the bullet cause corrosion of the inner wall, which is noticeable immediately in front of the chamber. In this study, the mechanical properties of Cr-Mo-V steel, which is the base material, were tested using Taguchi experimental design to find the best nitriding treatment conditions. For the nitriding process, the working time, salt bath temperature, and salt concentration were combined as three conditions and placed in the $L_9(3^4)$, orthogonal array table. The thicknesses of the white layer and the nitrogen diffusion layer were measured after nitriding under each condition in a salt bath furnace. Durability was evaluated by measuring the degree of dispersion through actual shooting because it was difficult to evaluate the mechanical properties of the cylinder inner structure. As a result, it was confirmed that the durability was optimal at $565^{\circ}C$, 1 hour, 0.5%. These optimal conditions were selected by the statistical analysis of the Minitab program(ver.17).