• 제목/요약/키워드: switching states

검색결과 215건 처리시간 0.025초

스위칭 동태방정식을 이용한 선형 다변수서보메카니즘에 대한 견고한 제어기 설계 (The robust controller design for linear multivariable servo mechanism using switching dynamics)

  • 박귀태;곽군평;김동식;최중경;주영중
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 1989년도 한국자동제어학술회의논문집; Seoul, Korea; 27-28 Oct. 1989
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    • pp.535-540
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    • 1989
  • This paper presents an approach for designing a linear multivariable servo mechanism for the case of constant and time varying disturbances. In this paper, we use an "observer-based" approach to consider the disturbance vector as states of the system and the resulting servomechanism design involves the design of an asymptotic observer which estimates both the actual plant states and the disturbance states. The design makes use of switching dynamics instead of switching logics to obtain the sliding mode and from the switching dynamics we can remove the undesirable chattering phenomena.phenomena.

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선로개폐상태를 포함하는 전력통계 상태추정및 동정 (Power System State Estimation and Identification in Consideration of Line Switching)

  • 박영문;유석한
    • 전기의세계
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    • 제28권3호
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    • pp.57-64
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    • 1979
  • The static state estimation are divided into two groups; estimation and detection & identification. This paper centers on detection and identification algorithm. Especially, the identification of line errors is focused on and is performed by the extended W.L.S. algorithm with line swithching states. Here, line switching states mean the discrete values of line admittance which are influenced by unexpected line switching. The numerical results are obtained from the assumption that the noise vector is independent zero mean Gaussian random variables.

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A Switching Technique for Common Mode Voltage Reduction of 2-Level Inverter

  • Yun Hwan-Kyun;Kim Lee-Hun;Kim Jun-Ho;Won Chung-Yuen;Choi Gi-Su;Bae Joung-Hwan
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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    • pp.438-442
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    • 2001
  • Much attention has given to EMI effects created by variable speed ac drive system. This paper focuses on the switching technique to mitigate common mode voltage. Zero switching states of inverter control invoke large common mode voltage. Using inversed carrier wave, zero switching states are removed. In addition, proposed technique is easy to apply to existing 2-level inverter design. And common mode mitigation technique for sinusoidal PWM is also presented. Proposed switching technique is implemented with a 2.2kw 1735rpm induction motor.

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Bipolar Resistance Switching Characteristics of $NiO_{1+x}$ films with Adding Higher-Valence Impurities

  • 김종기;손현철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.370-370
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    • 2010
  • The effects of adding higher-valence impurities on the bipolar resistive switching characteristics of Pt/$NiO_{1+x}$/TiN MIM stacks and physical properties were investigated. $NiO_{1+x}$ films with 14% W deposited at 20% oxygen partial pressure exhibited the bipolar resistance switching characteristics in Pt/$NiO_{1+x}$/TiN MIM stacks, while $NiO_{1+x}$ films with 8.2% W show unipolar resistance switching behavior. The relationship of W-doping and the crystallinity was studied by X-ray diffraction. The metallic Ni contents and $WO_x$ binding states with W amount was investigated by XPS. Our result showed that the metallic Ni, $WO_x$ binding states, and crystallinity in $NiO_{1+x}$ played an important role on the bipolar resistive switching.

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최소원리의 적용에 의한 이중열용량계의 최적계속온도제어방식에 관한 연구 (Pontryagin's Minimum Principle Applied to a Double Capacitive Thermal System)

  • 장세훈
    • 전기의세계
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    • 제21권3호
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    • pp.31-40
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    • 1972
  • This study intends to investigate the optimal switching modes of a double-capacitive thermal system under different constraints on the state and the control variable, by the application of the Pontryagin's Minimum Principle. Throughout the development, the control effort is assumed to have two modes of state: M or zero and the terminal times being fixed. In the first part of this study, the Principle is discussed under various conditions for this particular problem, with different criterion functions and in the same time imposing a certain constraints; i) on the terminal states, ii) on functions of the terminal states. Depending upon the upper bound value of the control vector, possible driving modes of the states are studied from which particular optimal driving modes are extracted so as to meet the specified constraints and boundary conditions imposed in the problem. Numerical solutions are evaluated for an over0damped, double-capacitive thermal plant and the optimal solutions: the switching mode, the optimal switching time, and the control effort are compared with the analytical results, in the second part of this work, to confirm the development.

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2-레벨 인버터의 전도노이즈 저감을 위한 스위칭 기법 (A Switching Technique for Common Mode Voltage Reduction of 2-Level Inverter)

  • 윤환균;김이훈;김준호;원충연;최기수;배정환
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2001년도 전력전자학술대회 논문집
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    • pp.434-437
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    • 2001
  • Much attention has given to EMI effects created by variable speed ac drive system. This paper focuses on the switching technique to mitigate common mode voltage. Zero switching states of inverter control invoke large common mode voltage. Using inversed carrier wave, zero switching states are removed. In addition, proposed technique is easy to apply to existing 2-level inverter design. Simulation results show that common mode voltages adapting proposed technique are reduced regarding conventional method.

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Variance Swap Pricing with a Regime-Switching Market Environment

  • Roh, Kum-Hwan
    • Management Science and Financial Engineering
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    • 제19권1호
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    • pp.49-52
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    • 2013
  • In this paper we provide a valuation formula for a variance swap with regime switching. A variance swap is a forward contract on variance, the square of realized volatility of the underlying asset. We assume that the volatility of underlying asset is governed by Markov regime-switching process with finite states. We find that the proposed model can provide ease of calculation and be superior to the models currently available.

이원계 $SiO_2$$TiO_2$ 박막의 저항 변화 특성 (Resistance Switching Characteristics of Binary $SiO_2\;and\;TiO_2$ Films)

  • 박인성;김경래;안진호
    • 마이크로전자및패키징학회지
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    • 제13권2호
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    • pp.15-19
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    • 2006
  • 이원계 산화막인 비정질 $SiO_2$와 다결정 $TiO_2$의 저항 변화 특성을 연구하였다. Metal-Insulator-Metal의 저항 소자를 형성하여 전압 sweep에 의한 I-V를 측정하여 저항 상태를 확인하였다. 즉, 낮은 저항 상태 (LRS) 와 높은 저항 상태 (HRS) 의 두 가지 저항 상태가 존재하였으며, LRS는 전압에 의한 절연체의 불완전한 breakdown 후에, HRS는 전압에 의한 negative differential resistance 후에 각각 나타났다. LRS의 경우에는 Ohmic 전도 mechanism에 의해서, HRS의 경우에는 Schottky contact에 의한 potential barrier의 생성이 저항 상태를 결정한다고 제안하였다. 즉, potential barrier의 생성과 소멸이 두 저항 상태를 형성한다고 할 수 있다. 유전율이 높은 $TiO_2$$SiO_2$에 비하여, 낮은 동작 특성 전압을 나타내었으며, 1 V에서의 저항비도 높았다.

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A Novel Vertical Directional Coupler Switch with Switching Operation-Induced, Extinction Ratio-Adjusted, and Extinction Ratio-Enhanced Sections

  • Cho, Sung-Chan;Hong, Hyun-Ha;Yang, Choong-Reol;Choi, Jee-Yon;Kang, Min-Ho;Hwang, Hyun-Yong;Choi, Young-Woo;Kim, Hae-Geun;Jung, Byung-Min;Kim, Boo-Gyoun
    • ETRI Journal
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    • 제24권2호
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    • pp.109-116
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    • 2002
  • We propose a novel very short (< $300{\mu}m$) vertical directional coupler switch with high extinction ratios larger than 30 dB. The device consists of a switching operation induced section (SOIS), an extinction ratio adjusted section (ERAS), and an extinction ratio enhanced section (ERES). These are achieved by changing the refractive index of one core. The switching operation is induced by changing the refractive index of one core in the SOIS. The improvement of extinction ratios larger than 30 dB for both the cross and bar states is made by controlling the asymmetry of the refractive indices of both cores in the ERES. Through the ERAS, different extinction ratios between the cross and bar states at the end of the SOIS are changed to the same value. For this reason, the optimum asymmetry of the refractive indices of the cores for the maximum extinction ratios and the lengths of ERES are the same for cross and bar states. Design guidelines for high extinction ratios with large tolerances are presented.

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비정질 As-Ge-Te 박막의 물리적 성질 및 스위칭 특성 (The physical properties and switching characteristics of amorphous As-Ge-Te thin film)

  • 이현용;천석표;이영종;정홍배
    • 대한전기학회논문지
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    • 제44권7호
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    • pp.901-907
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    • 1995
  • The switching characteristics of As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film were investigated under d.c. bias. And the frequency dependence of the conductivity was analysed with regard to the temperature dependence, in order to find the physical properties of the As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film ; a characteristic relaxation time (.tau.$_{0}$ ), the spatial density of defect states (N), and the localized wavefunction (.alpha.$^{-1}$ ). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively. The threshold voltage is increased as the thickness and the electrode distance is increased, while the threshold voltage is decreased in proportion to the increased annealing time and temperature.

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