• Journal of Electrical Engineering and Technology
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• 제2권3호
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• pp.306-311
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• 2007

The transient fields generated during switching operations in a Gas Insulated Substation (GIS) are associated with high frequency components in the order of few tens of MHz. These transient fields leak into the external environment of the gas-insulated equipment and can interfere with the nearby electronics. Measurements of the transient fields are thus required to characterise the interference caused by switching phenomena in such substations. In view of the above, E-field emission measurement during a switching operation has been carried out for a 245 kV GIS model, using a resonant dipole antenna and D-dot sensor. The characteristics of the E-fields i.e., frequency spectra and their levels have been analysed and are reported in the paper. Suitability of the measurements has been confirmed by comparing frequency spectra of the measured and computed transient fields.

• Journal of Information Display
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• 제1권1호
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• pp.9-13
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• 2000

In liquid crystal displays, the display mode that represents initial liquid crystal alignment and method of applying voltage, mainly determines the image quality of display. Recently we have developed the fringe-field switching (FFS) mode exhibiting high image quality. In this paper, a pixel concept, manufacturing process, materials, and electro-optic characteristics of the FFS mode comparing with conventional in-plane switching mode, and its possible application to reflective type are discussed.

• 한국광학회지
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• 제25권6호
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• pp.301-310
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• 2014

현재 Fringe-field switching(FFS) 액정 모드는 고화질 및 고정세 액정 디스플레이에 주로 적용되고 있다. 본 총설에서는 FFS모드의 어떠한 동작원리가 기존에 다른 액정모드 보다 왜 우수한 전기광학 특성을 갖는지에 대한 상세 한 설명과 더불어 FFS모드의 역사적 발전 현황, 기술의 현 주 이슈 및 향후 발전방향을 기술한다.

• ETRI Journal
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• 제23권3호
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• pp.106-110
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• 2001

Subpicosecond all-optical switching method based on the simultaneous two-photon coherence exchange is proposed and numerically demonstrated. The optical switching mechanism is based on the optical field induced dark resonance swapping via nondegenerate four-wave mixing processes. For potential applications of ultrafast all-optical switching in fiber-optic communications, 10-THz channel number independent quantum router is discussed.

• E2M - 전기 전자와 첨단 소재
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• 제11권10호
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• pp.46-52
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• 1998

In this study, polarization switching characteristics of Pb(ZrxTil-x)O3 (PZT) thin films were investigated. Switching times(ts) were found to be decreased as the Zr mol% was increased. But, the switching peak currents(Imax) showed the largest value at 50 mol% Zr. As a result of this experiment, ts was found to be depended on the remanent polarization and coercive field and also Imax strongly depended on the dielectric constant of PZT thin films. In order to investigate the partial switching kinetics of PZT thin films, short and relatively small voltage pulses were applied to the MFM(metalferroelectric metal) PZT capacitors and polarization switching curves were measured with a variation of the total width of the applied pulses. Also, the switching curves were measured at different applied voltages(4, 8, 10, 12 and 14 volts). As the applied voltages increased, ts and Imax were found to be decreased and increased, respectively. In case of fatigued specimen which we applied $\pm$10 volts square pulse for 1010 cycles, ts and Imax were found to be shorter and smaller than those of virgin specimens. This is due to the decrease of the remanent polarization and the increase of the coercive field.

• 대한전자공학회논문지SD
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• 제45권8호
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• pp.1-10
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• 2008

본 논문에서는 새로운 스위칭 방식인 LFS (Local Field Switching)을 이용하여 설계한 128비트 MRAM (Magnetoresistive Random Access Memo교)에 대해 기술하였다. LFS 방식은 MTJ (Magnetic Tunnel Junction)를 직접 통과해 흐르는 전류에 의해 형성되는 국소 자기장을 이용하여 MTJ의 극성을 변환시킨다. 이 방식은 MTJ와 전류의 거리가 가깝기 때문에 작은 전류로도 충분히 큰 자기장을 형성하므로 writing current가 적어도 된다. 또한 Digit Line이 없어도 되므로 half select disturbance가 발생하지 않아 기존 MTJ를 이용한 방식에 비해 셀 선택도가 우수하다. 설계한 MRAM은 IT(트랜지스터)-1MTJ의 메모리 셀 구조를 가지며 양방향 write driver와 mid-point reference cell block, current mode sense amplifier를 사용한다. 그리고 MTJ 공정 없이 회로 동작을 확인하기 위해 LFS-MTJ cell을 CMOS emulation cell로 대체하였다. 설계한 회로를 6 metal을 사용하는 $0.18{\mu}m$ CMOS 공정으로 구현하였고 제작된 chip을 custom board 상에서 테스트하여 동작을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.63-64
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• 2009

Optical bounce during switching in the fringe field switching (FFS) mode using a liquid crystal (LC) with positive dielectric anisotropy has been observed. According to the analysis, it occurs at two positions which are center and edge of the pixel electrode, which decreases decaying response time. The former is major and mainly associated with increase in twist angle instantaneously during switching off resulted from decrease in tilt angle near by LC molecules at center. This paper discusses the origin of such optical bounces.

• 전기학회논문지P
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• 제51권1호
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• pp.10-17
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• 2002

Due to the development of information communication field, the interest of the SMPS(Switched Mode Power Supply) is increased. The size and weight of SMPS are decided by inductor, capacitor and transformer. Thus, the low loss converter which is operated in high speed switching is required. The resonant FB DC-DC converter is able to operate in high speed switching and apply to high power field because the switching loss is low. In this thesis, it is proposed to control strategy for constant output power of resonant FB DC-DC converter in variable input voltage. The proposed control system is a digital I-PD type control and apply to phase-shift resonant type controller. The output voltage tracks reference without steady state error in variable input voltage. The validity of proposed control strategy is verified from results of simulation and experiment.

• 한국전기전자재료학회논문지
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• 제15권8호
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• pp.720-725
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• 2002

The fringe-field switching (FFS) mode was known to exhibit both a wide viewing angle and high transmittance, especially when using the liquid crystal (LC) with negative dielectric anisotropy. In the device, the LC director rotates almost in-plane. However, in the bright state the device shows bluish and yellowish color along parallel and perpendicular to the LC director at off-normal directions since the LC director rotates only in one direction. Such a problem was greatly improved using a wedge shape of only pixel electrodes. In this way two different field directions exist in a pixel, enabling the LC director to rotate in two opposite directions. Consequently, owing to dual domain effect when using the LC with negative dielectric anisotropy, the viewing angle characteristics are greatly improved.

• 한국정밀공학회지
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• 제22권2호
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• pp.120-125
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• 2005

Effect of transverse electric fields on fracture behavior in ferroelectric ceramics under purely electrical loading is investigated. It is shown that the shape and size of the domain switching zone depend strongly on the ratio of the transverse electric field to the coercive electric field as well as the direction of the applied electric field. Under small-scale conditions, the crack-tip mode I and II stress intensity factors induced by ferroelectric domain switching are numerically obtained. The crack kinking in ferroelectric ceramics is also discussed.