• Title/Summary/Keyword: switching control

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Unusual ALD Behaviors in Functional Oxide Films for Semiconductor Memories

  • Hwang, Cheol Seong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.77.1-77.1
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    • 2013
  • Atomic layer deposition (ALD) is known for its self-limiting reaction, which offers atomic-level controllability of the growth of thin films for a wide range of applications. The self-limiting mechanism leads to very useful properties, such as excellent uniformity over a large area and superior conformality on complex structures. These unique features of ALD provide promising opportunities for future electronics. Although the ALD of Al2O3 film (using trimethyl-aluminum and water as a metal precursor and oxygen source, respectively) can be regarded as a representative example of an ideal ALD based on the completely self-limiting reaction, there are many cases deviating from the ideal ALD reaction in recently developed ALD processes. The nonconventional aspects of the ALD reactions may strongly influence the various properties of the functional materials grown by ALD, and the lack of comprehension of these aspects has made ALD difficult to control. In this respect, several dominant factors that complicate ALD reactions, including the types of metal precursors, non-metal precursors (oxygen sources or reducing agents), and substrates, will be discussed in this presentation. Several functional materials for future electronics, such as higher-k dielectrics (TiO2, SrTiO3) for DRAM application, and resistive switching materials (NiO) for RRAM application, will be addressed in this talk. Unwanted supply of oxygen atoms from the substrate or other component oxide to the incoming precursors during the precursor pulse step, and outward diffusion of substrate atoms to the growing film surface even during the steady-state growth influenced the growth, crystal structure, and properties of the various films.

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Selecting Multiple Query Examples for Active Learning (능동적 학습을 위한 복수 문의예제 선정)

  • 강재호;류광렬
    • Proceedings of the Korean Information Science Society Conference
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    • 2004.04b
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    • pp.541-543
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    • 2004
  • 능동적 학습(active learning)은 제한된 시간과 인력으로 가능한 정확도가 높은 분류기(classifier)를 생성하기 위하여, 훈련집합에 추가할 예제 즉 문의예제(query example)의 선정과 확장된 훈련집합으로 다시 학습하는 과정을 반복하여 수행한다. 능동적 학습의 핵심은 사용자에게 카테고리(category) 부여를 요청할 문의예제를 선정하는 과정에 있다. 효과적인 문의예제를 선정하기 위하여 다양한 방안들이 제안되었으나, 이들은 매 문의단계마다 하나의 문의예제를 선정하는 경우에 가장 적합하도록 고안되었다. 능동적 학습이 복수의 예제를 사용자에게 문의할 수 있다면, 사용자는 문의예제들을 서로 비교해 가면서 작업할 수 있으므로 카테고리 부여작업을 보다 빠르고 정확하게 수행할 수 있을 것이다. 또한 충분한 인력을 보유한 상황에서는, 카테고리 부여작업을 병렬로 처리할 수 있어 전반적인 학습시간의 단축에 큰 도움이 될 것이다. 하지만, 각 예제의 문의예제로써의 적합 정도를 추정하면 유사한 예제들은 서로 비슷한 수준으로 평가되므로, 기존의 방안들을 복수의 문의예제 선정작업에 그대로 적용할 경우, 유사한 예제들이 문의예제로 동시에 선정되어 능동적 학습의 효율이 저하되는 현상이 나타날 수 있다. 본 논문에서는 특정 예제를 문의예제로 선정하면 이와 일정 수준이상 유사한 예제들은 해당 예제와 함께 문의예제로 선정하지 않음으로써, 이러한 문제점을 극복할 수 있는 방안을 제안한다. 제안한 방안을 문서분류 문제에 적용해 본 결과 기존 문의예제 선정방안으로 복수 문의예제를 선정할 때 발생할 수 있는 문제점을 상당히 완화시킬 있을 뿐 아니라, 복수의 문의예제를 선정하더라도 각 문의 단계마다 하나의 예제를 선정하는 경우에 비해 큰 성능의 저하가 없음을 실험적으로 확인하였다./$m\ell$로 나타났다.TEX>${HCO_3}^-$ 이온의 탈착은 서서히 진행되었다. R&D investment increases are directly not liked to R&D productivities because of delays and side effects during transition periods between different stages of technology development. Thus, It is necessary to develope strategies in order to enhance efficiency of technological development process by perceiving the switching pattern. 기여할 수 있을 것으로 기대된다. 것이다.'ity, and warm water discharges from a power plant, etc.h to the way to dispose heavy water adsorbent. Through this we could reduce solid waste products and the expense of permanent disposal of radioactive waste products and also we could contribute nuclear power plant run safely. According to the result we could keep the best condition of radiation safety super vision and we could help people believe in safety with Radioactivity wastes control for harmony with Environ

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Rainfall-Runoff Analysis Utilizing Multiple Impulse Responses (복수의 임펄스 응답을 이용한 강우-유출 해석)

  • Yoo, Chul-Sang;Park, Joo-Young
    • Journal of the Korean Institute of Intelligent Systems
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    • v.16 no.5
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    • pp.537-543
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    • 2006
  • There have been many recent studies on the nonlinear rainfall-runoff modeling, where the use of neural networks is shown to be quite successful. Due to fundamental limitation of linear structures, employing linear models has often been considered inferior to the neural network approaches in this area. However, we believe that with an appropriate extension, the concept of linear impulse responses can be a viable tool since it enables us to understand underlying dynamics principles better. In this paper, we propose the use of multiple impulse responses for the problem of rainfall-runoff analysis. The proposed method is based on a simple and fixed strategy for switching among multiple linear impulse-response models, each of which satisfies the constraints of non-negativity and uni-modality. The computational analysis performed for a certain Korean hydrometeorologic data set showed that the proposed method can yield very meaningful results.

Smart grid and nuclear power plant security by integrating cryptographic hardware chip

  • Kumar, Niraj;Mishra, Vishnu Mohan;Kumar, Adesh
    • Nuclear Engineering and Technology
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    • v.53 no.10
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    • pp.3327-3334
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    • 2021
  • Present electric grids are advanced to integrate smart grids, distributed resources, high-speed sensing and control, and other advanced metering technologies. Cybersecurity is one of the challenges of the smart grid and nuclear plant digital system. It affects the advanced metering infrastructure (AMI), for grid data communication and controls the information in real-time. The research article is emphasized solving the nuclear and smart grid hardware security issues with the integration of field programmable gate array (FPGA), and implementing the latest Time Authenticated Cryptographic Identity Transmission (TACIT) cryptographic algorithm in the chip. The cryptographic-based encryption and decryption approach can be used for a smart grid distribution system embedding with FPGA hardware. The chip design is carried in Xilinx ISE 14.7 and synthesized on Virtex-5 FPGA hardware. The state of the art of work is that the algorithm is implemented on FPGA hardware that provides the scalable design with different key sizes, and its integration enhances the grid hardware security and switching. It has been reported by similar state-of-the-art approaches, that the algorithm was limited in software, not implemented in a hardware chip. The main finding of the research work is that the design predicts the utilization of hardware parameters such as slices, LUTs, flip-flops, memory, input/output blocks, and timing information for Virtex-5 FPGA synthesis before the chip fabrication. The information is extracted for 8-bit to 128-bit key and grid data with initial parameters. TACIT security chip supports 400 MHz frequency for 128-bit key. The research work is an effort to provide the solution for the industries working towards embedded hardware security for the smart grid, power plants, and nuclear applications.

Control of ZnO Sputtering Growth by Changing Substrate Bias Voltage (ZnO 스퍼터링에서 기판전압의 변화에 의한 성장 조절)

  • Meng, Jun;Choi, Jaewon;Jeon, Wonjin;Jo, Jungyol
    • Journal of the Semiconductor & Display Technology
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    • v.16 no.2
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    • pp.94-97
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    • 2017
  • Amorphous Si has been used for data processing circuits in flat panel displays. However, low mobility of the amorphous Si is a limiting factor for the data transmission speed. Metal oxides such as ZnO have been studied to replace the amorphous Si. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. When ZnO is grown by sputtering with $O_2$ as an oxidizer, there can be many ion species arising from $O_2$ decomposition. $O^+$, $O_2{^+}$, and $O^-$ ions are expected to be the most abundant species, and it is not clear which one contributes to the ZnO growth. We applied alternating substrate voltage (0 V and -70 V) during sputtering growth. We studied changes in transistor characteristics induced by the voltage switching. We also compared ZnO grown by dc and rf sputtering. ZnO film was grown at $450^{\circ}C$ substrate temperature. ZnO thin-film transistor grown with these methods showed $7.5cm^2/Vsec$ mobility, $10^6$ on-off ratio, and -2 V threshold voltage.

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The Analysis of Light Emissions on Ar DC Glow Discharge under the Atmosphere Pressure (대기압 Ar 직류 글로우 방전에서 인가전압의 파형특성에 따른 광원효율 분석)

  • SO, Soon-Youl
    • Journal of IKEEE
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    • v.23 no.3
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    • pp.865-872
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    • 2019
  • We developed a one-dimensional Ar fluid model running in DC-type applied voltage with a sine and a pulse waveform at the atmosphere pressure. We investigated the light emissions and efficiencies of ${\lambda}_{128nm}$, ${\lambda}_{727nm}$, ${\lambda}_{912nm}$ and ${\lambda}_{966nm}$ from the Ar excited particles. From the results, the light emission of ${\lambda}_{128nm}$ and ${\lambda}_{727nm}$ in the applied voltage with a sine waveform were almost two times as in DC voltage type. The shorter the switching time of applied voltage was, the more the light emissions of ${\lambda}_{128nm}$ and ${\lambda}_{727nm}$ were. We discussed the power consumption and Joule heating by charged particles.

Separation Inverter Noise and Detection of DC Series Arc in PV System Based on Discrete Wavelet Transform and High Frequency Noise Component Analysis (DWT 및 고주파 노이즈 성분 분석을 이용한 PV 시스템 인버터 노이즈 구분 및 직렬 아크 검출)

  • Ahn, Jae-Beom;Jo, Hyun-Bin;Lee, Jin-Han;Cho, Chan-Gi;Lee, Ki-Duk;Lee, Jin;Lim, Seung-Beom;Ryo, Hong-Je
    • The Transactions of the Korean Institute of Power Electronics
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    • v.26 no.4
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    • pp.271-276
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    • 2021
  • Arc fault detector based on multilevel DWT with analysis of high-frequency noise components over 100 kHz is proposed in this study to improve the performance in detecting serial arcs and distinguishing them from inverter noise in PV systems. PV inverters generally operate at a frequency range of 20-50 kHz for switching operation and maximum power tracking control, and the effect of these frequency components on the signal for arc detection leads to negative arc detection. High-speed ADC and multilevel DWT are used in this study to analyze frequency components above 100 kHz. Such high frequency components are less influenced by inverter noise and utilized to detect as well as separate DC series arc from inverter noise. Arc detectors identify the input current of PV inverters using a Rogowski coil. The sensed signal is filtered, amplified, and used in 800kSPS ADC and DWT analysis and arc occurrence determination in DSP. An arc detection simulation facility in UL1699B was constructed and AFD tests the proposed detector were conducted to verify the performance of arc detection and performance of distinction of the negative arc. The satisfactory performance of the arc detector meets the standard of arc detection and extinguishing time of UL1699B with an arc detection time of approximately 0.11 seconds.

Development of DC/DC Converters and Actual Vehicle Simulation Experiment for 150 kW Class Fuel-cell Electric Vehicle (150kW급 수소연료전지 차량용 DC/DC 컨버터 개발 및 실차모사 실험)

  • Kim, Sun-Ju;Jeong, Hyeonju;Choi, Sewan;Cho, Jun-Ho;Jeon, Yujong;Park, Jun-Sung;Yoon, Hye-Sung
    • The Transactions of the Korean Institute of Power Electronics
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    • v.27 no.1
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    • pp.26-32
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    • 2022
  • This paper proposes a power system that includes a 120k W fuel cell DC-DC converter (FDC) and 30 kW bidirectional DC-DC converter (BHDC) for a 150 kW fuel-cell vehicle. With a high DC link voltage of 800 V, the efficiency and power density of the power electronic components are improved. Through the modular design of FDC and BHDC, electric components are shared, resulting in reduced mass production costs. The switching frequency of 30 kHz of full SiC devices and optimal design of coupled inductor reduce the volume, achieving a power density of 8.3 kW/L. Furthermore, a synergetic operation strategy using variable limiter control of FDC and BHDC was proposed to efficiently operate the fuel cell vehicle considering the fuel cell stack efficiency according to the load. Finally, the performance of the prototype was verified by Highway Fuel Economy Driving Schedule testing, EMI test, and the linked operation between FDC and BHDC. The full load efficiencies of the FDC and BHDC prototypes are 98.47% and 98.74%, respectively.

Effect of Post Heat Treatment on the Microstructure and Mechanical Properties of BCuP-5 Filler Metal Coating Layers Fabricated by High Velocity Oxygen Fuel Thermal Spray Process on Ag Substrate (고속 화염 용사 공정으로 제조된 BCuP-5 필러 금속 코팅층/Ag 기판 클래드 소재의 후열처리에 따른 미세조직 및 기계적 특성 변화)

  • Park, So-Yeon;Youn, Seong-June;Park, Jae-Sung;Lee, Kee-Ahn
    • Journal of Powder Materials
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    • v.29 no.4
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    • pp.283-290
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    • 2022
  • A Cu-15Ag-5P filler metal (BCuP-5) is fabricated on a Ag substrate using a high-velocity oxygen fuel (HVOF) thermal spray process, followed by post-heat treatment (300℃ for 1 h and 400℃ for 1 h) of the HVOF coating layers to control its microstructure and mechanical properties. Additionally, the microstructure and mechanical properties are evaluated according to the post-heat treatment conditions. The porosity of the heat-treated coating layers are significantly reduced to less than half those of the as-sprayed coating layer, and the pore shape changes to a spherical shape. The constituent phases of the coating layers are Cu, Ag, and Cu-Ag-Cu3P eutectic, which is identical to the initial powder feedstock. A more uniform microstructure is obtained as the heat-treatment temperature increases. The hardness of the coating layer is 154.6 Hv (as-sprayed), 161.2 Hv (300℃ for 1 h), and 167.0 Hv (400℃ for 1 h), which increases with increasing heat-treatment temperature, and is 2.35 times higher than that of the conventional cast alloy. As a result of the pull-out test, loss or separation of the coating layer rarely occurs in the heat-treated coating layer.

Fundamental Metrology by Counting Single Flux and Single Charge Quanta with Superconducting Circuits

  • Niemeyer, J.
    • Progress in Superconductivity
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    • v.4 no.1
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    • pp.1-9
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    • 2002
  • Transferring single flux quanta across a Josephson junction at an exactly determined rate has made highly precise voltage measurements possible. Making use of self-shunted Nb-based SINIS junctions, programmable fast-switching DC voltage standards with output voltages of up to 10 V were produced. This development is now extended from fundamental DC measurements to the precise determination of AC voltages with arbitrary waveforms. Integrated RSFQ circuits will help to replace expensive semiconductor devices for frequency control and signal coding. Easy-to-handle AC and inexpensive quantum voltmeters of fundamental accuracy would be of interest to industry. In analogy to the development in the flux regime, metallic nanocircuits comprising small-area tunnel junctions and providing the coherent transport of single electrons might play an important role in quantum current metrology. By precise counting of single charges these circuits allow prototypes of quantum standards for electric current and capacitance to be realised. Replacing single electron devices by single Cooper pair circuits, the charge transfer rates and thus the quantum currents could be significantly increased. Recently, the principles of the gate-controlled transfer of individual Cooper pairs in superconducting A1 devices in different electromagnetic environments were demonstrated. The characteristics of these quantum coherent circuits can be improved by replacing the small aluminum tunnel Junctions by niobium junctions. Due to the higher value of the superconducting energy gap ($\Delta_{Nb}$$7\Delta_{Al}$), the characteristic energy and the frequency scales for Nb devices are substantially extended as compared to A1 devices. Although the fabrication of small Nb junctions presents a real challenge, the Nb-based metrological devices will be faster and more accurate in operation. Moreover, the Nb-based Cooper pair electrometer could be coupled to an Nb single Cooper pair qubit which can be beneficial for both, the stability of the qubit and its readout with a large signal-to-noise ratio..

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